CN114203802A - 一种降低集成二极管反向恢复损耗的rc-igbt结构 - Google Patents
一种降低集成二极管反向恢复损耗的rc-igbt结构 Download PDFInfo
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Abstract
本发明公开了一种降低集成二极管反向恢复损耗的RC‑IGBT结构,该结构在常规RC‑IGBT结构的基础上,对二极管与IGBT部分的P+发射极区域进行分立设计。在IGBT部分,保留常规的P+发射区结构,以确保RC‑IGBT工作在IGBT模式时性能不会受损;而在二极管部分,将P+发射区的长度缩短,置于假栅两侧并确保与发射极金属电极接触,被缩短的P+发射区会降低集成二极管阳极载流子的注入效率,减少N漂移区在二极管导通中所存储的载流子数量,最终达到在不损坏IGBT性能的前提下,降低集成二极管反向恢复电流峰值以及反向恢复损耗的目的。
Description
技术领域
本发明涉及半导体领域,具体涉及一种降低集成二极管反向恢复损耗的RC-IGBT结构。
背景技术
为了缩减功率器件的尺寸和生产成本,学者们提出将反向续流二极管寄生在IGBT内部,从而研究出了逆导型IGBT(Reverse Conducting-IGBT,RC-IGBT)。RC-IGBT目前受到广泛研究,它具有复杂的权衡关系,要实现IGBT特性(包括IGBT的导通压降VCEsat和关断损耗Eoff)与体内寄生二极管特性(包括二极管的导通电压VF和二极管的反向恢复损耗Err)之间的权衡。在续流二极管由导通转为阻断状态的过程中,反向加压后二极管并不能立即进入阻断状态,而是会暂时保持导通状态并产生一个反向恢复电流,当二极管体内的载流子被完全抽取之后,反向恢复电流才减小到0,二极管关断。
RC-IGBT的损耗包括了IGBT工作模式下的损耗以及二极管工作模式下的损耗。而二极管工作模式下的损耗以关断时的反向恢复损耗为主。因此,想要降低RC-IGBT中二极管的损耗,主要需针对二极管在反向恢复过程中的损耗。
发明内容
针对RC-IGBT使用过程中降低二极管反向恢复损耗的需求,本发明提供了一种降低集成二极管反向恢复损耗的RC-IGBT结构。
本发明解决上述技术问题所采用的技术方案是:一种降低集成二极管反向恢复损耗的RC-IGBT结构,其元胞结构包括P型集电区(1)和N型集电区(2),位于集电区(1)、(2)上方的N型缓冲层(3)和N型漂移区(4),载流子存储层(5)及P型基区(6),所述P型基区(6)上设有N+型发射区(7)和P+型发射区(8),P+型发射区(8)上方为金属Al发射极。
本发明的技术方案相对常规RC-IGBT结构,主要针对正面P+发射区的结构进行改进。在常规RC-IGBT结构的基础上,对二极管与IGBT部分的P+发射极区域进行分立设计。
进一步地,在IGBT部分,保留常规的P+发射区(8)结构,以确保工作在IGBT模式时,性能不会受损。
进一步地,在二极管部分,将P+发射区(8)的长度缩短,并分开放置于栅极两边。
进一步地,在二极管部分,要保证被缩短的P+发射区(8)与金属Al电极相接处,保持金半接触。
本发明的有益效果为:本发明提供了一种降低集成二极管反向恢复损耗的RC-IGBT结构。该结构在常规RC-IGBT结构的基础上,对二极管与IGBT部分的P+发射极区域进行分立设计。在IGBT部分,保留常规的P+发射区结构,以确保RC-IGBT工作在IGBT模式时性能不会受损;而在二极管部分,将P+发射区的长度缩短,置于假栅两侧并确保与发射极金属电极接触,被缩短的P+发射区会降低集成二极管阳极载流子的注入效率,减少N漂移区在二极管导通中所存储的载流子数量,最终达到在不损坏IGBT性能的前提下,降低集成二极管反向恢复电流峰值以及反向恢复损耗的目的。
附图说明
图1为本发明的结构示意图;
图2为常规RC-IGBT结构示意图;
图3为常规RC-IGBT与本发明的IGBT工作特性对比图;
图4为常规RC-IGBT与本发明的集成二极管反向恢复电流示意图。
具体实施方式
下面对本发明的具体实施方式进行描述,以便于本技术领域的技术人员理解本发明,但应该清楚,本发明不限于具体实施方式的范围,对本技术领域的普通技术人员来讲,只要各种变化在所附的权利要求限定和确定的本发明的精神和范围内,这些变化是显而易见的,一切利用本发明构思的发明创造均在保护之列。
本发明提出了一种降低集成二极管反向恢复损耗的RC-IGBT结构,其元胞结构包括P型集电区(1)和N型集电区(2),位于集电区(1)、(2)上方的N型缓冲层(3)和N型漂移区(4),载流子存储层(5)及P型基区(6),所述P型基区(6)上设有N+型发射区(7)和P+型发射区(8),P+型发射区(8)上方为金属Al发射极。
本发明的方案相对常规RC-IGBT结构,主要针对正面P+发射区的结构进行改进。在常规RC-IGBT结构的基础上,对二极管与IGBT部分的P+发射极区域进行分立设计,在IGBT部分,保留常规的P+发射区结构,以确保RC-IGBT工作在IGBT模式时性能不会受损;而在二极管部分,将P+发射区(8)的长度缩短,置于假栅两侧。按照本方案对结构进行改进后,被缩短的P+发射区(8)会降低集成二极管阳极载流子的注入效率,降低P区的空穴注入效率,进一步减少了在反向恢复过程中,N型漂移区(4)中的少数载流子数量,从而降低反向恢复电流峰值以及反向恢复损耗。
在一次实施例中,测试不同的P+发射区(8)长度对于IGBT静态性能的影响。如图3所示,与常规RC-IGBT结构相比,在不同的P+发射区(8)长度下,IGBT的静态性能并未改变。可见本发明对IGBT与集成二极管的发射区进行分立设计并不会影响IGBT的静态性能。
在一次实施例中,与常规的RC-IGBT相比,本发明的P+发射区(8)长度由5μm缩短至0.5μm。对集成二极管的反向恢复过程进行仿真测试,如图4所示,可以看到常规RC-IGBT的反向恢复电流峰值为16.1A而本发明的反向恢复电流峰值为14.0A。可见本发明所提出的结构有效地降低了集成二极管的反向恢复电流峰值,从而有效降低二极管的反向恢复损耗Err。
进一步地,在二极管部分,要保证被缩短的P+发射区(8)与金属Al电极相接处,保持金半接触。
综上所述,本发明提供了一种降低集成二极管反向恢复损耗的RC-IGBT结构。该结构在常规RC-IGBT结构的基础上,刻蚀RC-IGBT的集成二极管区域的IGBT栅极与集成二极管阳极之间的部分SiO2氧化层,并利用阻挡层金属将IGBT器件的P型基区与P+发射区短接,从而降低了集成二极管阳极有效载流子浓度,减小集成二极管阳极载流子注入效率,减少N漂移区在二极管导通中所存储的载流子数量,最终达到降低集成二极管反向恢复电流峰值以及反向恢复损耗的目的。
Claims (4)
1.一种降低集成二极管反向恢复损耗的RC-IGBT结构,其元胞结构包括P型集电区(1)和N型集电区(2),位于集电区(1)、(2)上方的N型缓冲层(3)和N型漂移区(4),载流子存储层(5)及P型基区(6),所述P型基区(6)上设有N+型发射区(7)和P+型发射区(8),P+型发射区(8)上方为金属Al发射极。
2.根据权利要求1所述的降低集成二极管反向恢复损耗的RC-IGBT结构,其特征在于,对二极管与IGBT部分的P+发射极区域进行分立设计。
3.根据权利要求1和2所述的降低反向恢复损耗的RC-IGBT结构,其特征在于,在IGBT部分,保留常规的P+发射区(8)结构。
4.根据权利要求1和2所述的降低集成二极管反向恢复损耗的RC-IGBT结构,其特征在于,在二极管部分,将P+发射区(8)的长度缩短,并分开放置于栅极两边。
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JP2013051346A (ja) * | 2011-08-31 | 2013-03-14 | Toyota Central R&D Labs Inc | ダイオード、半導体装置およびmosfet |
CN110797403A (zh) * | 2019-10-18 | 2020-02-14 | 上海睿驱微电子科技有限公司 | 一种rc-igbt半导体装置 |
US20210091216A1 (en) * | 2019-09-25 | 2021-03-25 | Mitsubishi Electric Corporation | Semiconductor device and manufacturing method thereof |
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JP2013051346A (ja) * | 2011-08-31 | 2013-03-14 | Toyota Central R&D Labs Inc | ダイオード、半導体装置およびmosfet |
US20210091216A1 (en) * | 2019-09-25 | 2021-03-25 | Mitsubishi Electric Corporation | Semiconductor device and manufacturing method thereof |
CN110797403A (zh) * | 2019-10-18 | 2020-02-14 | 上海睿驱微电子科技有限公司 | 一种rc-igbt半导体装置 |
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