CN114447101B - 一种集成续流沟道二极管的垂直GaN MOSFET - Google Patents

一种集成续流沟道二极管的垂直GaN MOSFET Download PDF

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CN114447101B
CN114447101B CN202210078228.7A CN202210078228A CN114447101B CN 114447101 B CN114447101 B CN 114447101B CN 202210078228 A CN202210078228 A CN 202210078228A CN 114447101 B CN114447101 B CN 114447101B
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魏杰
廖德尊
张�成
邓思宇
贾艳江
孙涛
郗路凡
赵智家
罗小蓉
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University of Electronic Science and Technology of China
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Abstract

本发明属于功率半导体技术领域，涉及一种集成续流沟道二极管的垂直GaN MOSFET。本发明主要特征在于：MOSFET源极与漏极分别同时作为续流二极管的阳极与阴极，源极槽与P型GaN阻挡层之间的漂移区作为续流二极管的沟道；相比于传统MOSFET，集成续流沟道二极管具有更低的反向续流开启电压、更小的反向导通损耗及更优良的反向恢复特性；相比于集成肖特基二极管，集成的续流沟道二极管具有更低的泄漏电流、更好的温度特性以及更高的击穿电压；正向阻断时，P型GaN埋层结构有效降低了栅极与源极凹槽附近的电场尖峰，因此本发明具有更高的击穿电压，相较于并联二极管实现续流的方案，有利于减小器件面积和寄生参数以及降低正向传导与反向传导时的导通电阻。

Description

一种集成续流沟道二极管的垂直GaN MOSFET
技术领域
本发明属于功率半导体技术领域，涉及一种集成续流沟道二极管的垂直GaNMOSFET。
背景技术
功率MOSFET与双极器件相比具有更好的开关性能，因此被广泛应用于高频功率开关领域。在许多功率开关电路中，例如逆变器和DC-DC转换器，功率晶体管通常与续流二极管反并联，电路通过续流二极管实现反向电流传导。功率场效应晶体管寄生的PN结体二极管能够反向传导电流，可做功率变换器反向续流使用。然而，GaN较大的禁带宽度，导致GaNMOSFET寄生PN结体二极管开启电压较大，同时，反向续流时漂移区中注入的少子会影响反向恢复特性，造成较大的功率损耗。外部二极管不仅会增加成本，还会引入额外的寄生电感和电容；另一种方案是集成肖特基二极管，但是肖特基接触增大了器件的泄漏电流，同时温度对肖特基二极管性能影响较大。
发明内容
针对上述问题，本发明提出一种集成沟道续流二极管的垂直GaN MOSFET。
本发明的技术方案为，如图1所示，一种集成续流沟道二极管的垂直GaN MOSFET，沿器件垂直方向自下而上包括：第一导电材料1、GaN衬底2、N型GaN漂移区3、势垒层4、P型GaN沟道层5、N型高掺杂GaN层6，在GaN漂移区3内且距离其顶部一定距离设置有P型GaN埋层结构，此处一定距离是根据器件性能需求进行灵活设置，特指P型GaN埋层不能与GaN漂移区3的顶部接触；器件中部设置有槽栅结构，所述槽栅结构由表面垂直贯穿N型高掺杂GaN层6、P型GaN沟道层5并嵌入势垒层4中，由覆盖于槽底部和侧壁的介质层71及填充于槽内的第二导电材料8构成；沿器件横向方向，两端设置有槽型源极结构；
所述P型GaN埋层结构由间断的P型GaN阻挡层10与P型屏蔽层11构成，且P型GaN阻挡层10位于器件两端，P型屏蔽层11由位于槽栅下方间断的两段构成；所述槽型源极结构垂直贯穿N型高掺杂GaN层6、P型GaN沟道层5以及势垒层4，底部与N型GaN漂移区3顶部接触，由位于槽型源极结构底部和侧壁的介质层72与覆盖于介质层72之上以及填充于槽内的第三导电材料9构成，且所述介质层72的侧壁与势垒层4、P型GaN沟道层5以及N型高掺杂GaN层6接触；所述第三导电材料9跨过源极槽向器件中部延伸，覆盖于N型高掺杂GaN层6之上，与介质层71侧壁接触，不与第二导电材料8接触，且部分贯穿N型高掺杂GaN层6嵌入P型GaN沟道层5中；沿器件横向方向位于器件两端的部分第三导电材料9，垂直贯穿部分介质层72，并垂直延伸N型GaN漂移区3和P型GaN阻挡层10中；
所述第一导电材料1与GaN衬底2形成欧姆接触，且所述第一导电材料1的引出端为漏极；所述第二导电材料8引出端为栅极；所述第三导电材料9与所述N型GaN漂移区3和N型高掺杂GaN层6均形成欧姆接触，且第三导电材料9的引出端为源极。
进一步的，所述势垒层4采用的材料为AlN、AlGaN、InGaN、InAlN中的一种或几种的组合。
本发明的有益效果为，相比于传统MOSFET寄生的PN结体二级管，集成的续流沟道二极管具有更小的开启电压和更优良的反向恢复特性；相比于集成肖特基二极管，集成的续流沟道二极管具有更低的泄漏电流、更好的温度特性以及更高的击穿电压。正向阻断时，由于P型GaN埋层结构能够有效降低栅极与源极凹槽附近的电场尖峰，本发明具有更高的击穿电压；相较于并联二极管实现续流的方案，本发明有利于减小器件面积和寄生参数；
附图说明
图1是本发明的结构示意图。
具体实施方式
下面结合附图和实施例，详细描述本发明的技术方案：
实施例1
如图1所示，本例的垂直GaN MOSFET，沿器件垂直方向自下而上包括：第一导电材料1、GaN衬底2、N型GaN漂移区3、势垒层4、P型GaN沟道层5、N型高掺杂GaN层6，在GaN漂移区3内且距离其顶部一定距离设置有P型GaN埋层结构；器件中部设置有槽栅结构，所述槽栅结构由表面垂直贯穿N型高掺杂GaN层6、P型GaN沟道层5并嵌入势垒层4中，由覆盖于槽底部和侧壁的介质层71及填充于槽内的第二导电材料8构成；沿器件横向方向，两端设置有槽型源极结构；
所述P型GaN埋层结构由间断的P型GaN阻挡层10与P型屏蔽层11构成，且P型GaN阻挡层10位于器件两端，P型屏蔽层11由位于槽栅下方间断的两段构成；所述槽型源极结构垂直贯穿N型高掺杂GaN层6、P型GaN沟道层5以及势垒层4，底部与N型GaN漂移区3顶部接触，由位于槽型源极结构底部和侧壁的介质层72与覆盖于介质层72之上以及填充于槽内的第三导电材料9构成，且所述介质层72的侧壁与势垒层4、P型GaN沟道层5以及N型高掺杂GaN层6接触；所述第三导电材料9跨过源极槽向器件中部延伸，覆盖于N型高掺杂GaN层6之上，与介质层71侧壁接触，不与第二导电材料8接触，且部分贯穿N型高掺杂GaN层6嵌入P型GaN沟道层5中；沿器件横向方向位于器件两端的部分第三导电材料9，垂直贯穿部分介质层72，并垂直延伸N型GaN漂移区3和P型GaN阻挡层10中；
所述第一导电材料1与GaN衬底2形成欧姆接触，且所述第一导电材料1的引出端为漏极；所述第二导电材料8引出端为栅极；所述第三导电材料9与所述N型GaN漂移区3和N型高掺杂GaN层6均形成欧姆接触，且第三导电材料9的引出端为源极。
本发明的工作原理：MOSFET源极与漏极分别同时作为续流二极管的阳极与阴极，源极槽与P型GaN阻挡层之间的漂移区作为续流二极管的沟道；在器件正向导通时，续流二极管的沟道被源极金属与GaN之间功函数之差以及P型GaN阻挡层耗尽，续流二极管处于关断状态，不影响器件的正向特性；在反向续流时，阳极相对于阴极为高电势，集成的续流二极管沟道耗尽区收缩，使得阳极与阴极之间产生电流导通路径，反向导通电流从阳极出发，经过续流二极管沟道与漂移区到达衬底，最终流向阴极；
集成的续流沟道二极管，相比于传统MOSFET寄生的PN结体二级管，具有更小的反向开启电压和更优良的反向恢复特性，相比于集成肖特基二极管，具有更低的泄漏电流、更好的温度特性以及更高的击穿电压。在正向阻断时，由于P型GaN埋层结构能够较好的屏蔽源极与栅极凹槽拐角处的高电场，因此器件具有更高的击穿电压和氧化层可靠性。

Claims (2)

1.一种集成续流沟道二极管的垂直GaN MOSFET，沿器件垂直方向自下而上包括：第一导电材料(1)、GaN衬底(2)、N型GaN漂移区(3)、势垒层(4)、P型GaN沟道层(5)、N型高掺杂GaN层(6)，在GaN漂移区(3)内且距离其顶部一定距离设置有P型GaN埋层结构；器件中部设置有槽栅结构，所述槽栅结构由表面垂直贯穿N型高掺杂GaN层(6)、P型GaN沟道层(5)并嵌入势垒层(4)中，由覆盖于槽底部和侧壁的介质层(71)及填充于槽内的第二导电材料(8)构成；沿器件横向方向，两端设置有槽型源极结构；
其特征在于：所述P型GaN埋层结构由间断的P型GaN阻挡层(10)与P型屏蔽层(11)构成，且P型GaN阻挡层(10)位于器件两端，P型屏蔽层(11)由位于槽栅下方间断的两段构成；所述槽型源极结构垂直贯穿N型高掺杂GaN层(6)、P型GaN沟道层(5)以及势垒层(4)，底部与N型GaN漂移区(3)顶部接触，由位于槽型源极结构底部和侧壁的介质层(72)与覆盖于介质层(72)之上以及填充于槽内的第三导电材料(9)构成，且所述介质层(72)的侧壁与势垒层(4)、P型GaN沟道层(5)以及N型高掺杂GaN层(6)接触；所述第三导电材料(9)跨过源极槽向器件中部延伸，覆盖于N型高掺杂GaN层(6)之上，与介质层(71)侧壁接触，不与第二导电材料(8)接触，且部分贯穿N型高掺杂GaN层(6)嵌入P型GaN沟道层(5)中；沿器件横向方向位于器件两端的部分第三导电材料(9)，垂直贯穿部分介质层(72)，并垂直延伸N型GaN漂移区(3)和P型GaN阻挡层(10)中；
所述第一导电材料(1)与GaN衬底(2)形成欧姆接触，且所述第一导电材料(1)的引出端为漏极；所述第二导电材料(8)引出端为栅极；所述第三导电材料(9)与所述N型GaN漂移区(3)和N型高掺杂GaN层(6)均形成欧姆接触，且第三导电材料(9)的引出端为源极。
2.根据权利要求1所述的一种集成续流沟道二极管的垂直GaN MOSFET，其特征在于，所述势垒层(4)采用的材料为AlN、AlGaN、InGaN、InAlN中的一种或几种的组合。
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