CN111223937B - 一种具有集成续流二极管的GaN纵向场效应晶体管 - Google Patents

一种具有集成续流二极管的GaN纵向场效应晶体管 Download PDF

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CN111223937B
CN111223937B CN202010051716.XA CN202010051716A CN111223937B CN 111223937 B CN111223937 B CN 111223937B CN 202010051716 A CN202010051716 A CN 202010051716A CN 111223937 B CN111223937 B CN 111223937B
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罗小蓉
欧阳东法
郗路凡
孙涛
杨超
邓思宇
魏杰
张波
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Hangzhou Xinmai Semiconductor Technology Co ltd
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Abstract

本发明属于功率半导体技术领域，涉及一种具有集成续流二极管的GaN纵向场效应晶体管。在反向续流时，集成二极管导通，具有低的导通压降及快的反向恢复特性。在正向导通时，集成二极管处于关断状态，不影响场效应晶体管的正向导通。在正向阻断时，由于P阱及上方半导体区对栅介质的保护，有效降低栅介质电场，提高栅介质可靠性，因此器件具有更高的击穿电压。由于P阱及上方半导体区的屏蔽作用，本发明具有更低的栅漏交叠电容，因此具有更小的开关损耗，同时可以防止误开启。相比传统平面栅场效应晶体管，本发明没有占用额外的芯片面积。

Description

一种具有集成续流二极管的GaN纵向场效应晶体管
技术领域
本发明属于功率半导体技术领域，涉及一种具有集成续流二极管的GaN纵向场效应晶体管。
背景技术
功率场效应晶体管(MOSFET)与双极器件相比具有更好的开关性能，因此被广泛应用于高频功率开关领域。功率场效应晶体管寄生的PN结体二极管能够反向传导电流，可做功率变换器反向续流使用。然而，GaN禁带宽度较大为3.4eV，因此PN结体二极管开启电压较大，同时，少子会影响反向恢复特性，造成较大的功率损耗。一种解决方案是降低漂移区内的载流子寿命来提升反向恢复特性，但同时会增大正向导通压降和泄漏电流。另一种方案是集成肖特基二极管，但是肖特基接触占用了额外的芯片面积，增大了泄漏电流，同时温度对肖特基性能影响较大。
发明内容
针对上述问题，本发明提出一种具有集成续流二极管的GaN纵向场效应晶体管。
本发明的技术方案为，如图1所示，一种具有集成续流二极管的GaN纵向场效应晶体管，从下到上包括：漏极结构、N型漂移区11及N型外延层14，所述N型外延层14中部向上凸起从而呈倒“T”字形结构，中部向上凸起部分形成JFET区6，JFET区6顶部设置有P型掺杂区5，所述P型掺杂区5上部两侧有第一N型高掺杂区3；所述漏极结构包括N型漏区12和及其下的漏电极13；
在所述JFET区6两侧的N型外延层14的上表面设置有P型阱区10；在P型掺杂区5和JFET区6的侧面以及P型阱区10靠近JFET区6一侧的上表面覆盖有第一绝缘介质4，第一绝缘介质4呈“L”字型结构；所述P型阱区10上部设置有第二N型高掺杂区9，且第二N型高掺杂区9与JFET区6的侧面有间距，即第一绝缘介质4覆盖JFET区6与第二N型高掺杂区9之间的P型阱区10上表面，且还覆盖部分第二N型高掺杂区9的上表面，第一绝缘介质4与位于第一绝缘介质4底部上表面的栅电极7构成栅极结构；在P型阱区10远离JFET区6一侧的上表面有第一导电材料8，第一导电材料8覆盖在部分第二N型高掺杂区9的上表面，且第一导电材料8与所述栅极结构有间距；在栅电极7上有第二绝缘介质15，在第二绝缘介质15上有控制栅极2，所述控制栅极2与栅电极7被第二绝缘介质15隔开，第二绝缘介质15、控制栅极2的侧面与第一绝缘介质4接触；
所述第一N型高掺杂区3和P型掺杂区5上有第二导电材料1，第二导电材料1的两侧与第一绝缘介质4接触；所述第一导电材料8与第二导电材料1共同引出端为源极；
其中，第二导电材料1、控制栅极2、第一N型高掺杂区3、第一绝缘介质4、P型掺杂区5、JFET区6、N型漂移区11、N型漏区12与漏电极13构成续流二极管，本发明方案中，因集成有续流二极管，在反向续流时，集成二极管导通，具有低的导通压降及快的反向恢复特性。在正向导通时，集成二极管处于关断状态，不影响场效应晶体管的正向导通。在正向阻断时，由于P阱及上方半导体区对栅介质的保护，有效降低栅介质电场，提高栅介质可靠性，因此器件具有更高的击穿电压。由于P阱及上方半导体区的屏蔽作用，本发明具有更低的栅漏交叠电容，因此具有更小的开关损耗，同时可以防止误开启。相比传统平面栅场效应晶体管，本发明没有占用额外的芯片面积。
进一步的，所述控制栅极2与源极相连。
进一步的，所述控制栅极2接固定电位。
控制栅极2与源极相连时，无需额外的控制信号，外部控制电路简单；控制栅极2与固定电位相连时，能有效控制第一绝缘介质4侧壁处P型掺杂区5表面的势垒高度，从而灵活控制反向续流二级管的开启电压。
本发明的有益效果为，相比于传统结构，集成二极管具有更低的开启电压、更小的导通损耗及更快的反向恢复特性；正向阻断时，由于P阱及上方P型掺杂区对栅介质的保护，本发明具有更高的耐压和栅氧可靠性；同时，P阱及上方P型掺杂区能有效屏蔽栅漏交叠电容，显著减小开关损耗。相比传统平面栅场效应晶体管，本发明没有占用额外的芯片面积。在正向导通时，集成二极管处于关断状态，不影响场效应晶体管的正向导通。
附图说明
图1是本发明的结构示意图。
具体实施方式
在发明内容部分已经对本发明的结构进行了详细描述，下面结合本发明与传统技术的工作原理区别，详细描述本发明取得的技术进步。
本发明的工作原理：在反向续流时，控制栅极2相对于漏电极13为正电压，会在第一绝缘介质4侧壁处P型掺杂区5表面形成电子反型层，使得第二导电材料1和漏电极13之间有电流路径，集成二极管导通。相比于功率场效应晶体管(MOSFET)寄生的PN结体二级管，具有更小的开启电压和更快的反向恢复特性；相比于集成肖特基二极管，具有更低的泄漏电流和更高的击穿电压。
在正向阻断时，由于P阱及上方半导体区对栅介质的保护，有效降低栅介质电场，提高栅介质可靠性，因此器件具有更高的击穿电压。由于P阱及上方半导体区的屏蔽作用，本发明具有更低的栅漏交叠电容，因此具有更小的开关损耗，同时可以防止误开启。相比传统平面栅场效应晶体管，本发明没有占用额外的芯片面积。

Claims (3)

1.一种具有集成续流二极管的GaN纵向场效应晶体管，从下到上包括：漏极结构、N型漂移区(11)及N型外延层(14)，所述N型外延层(14)中部向上凸起从而呈倒“T”字形结构，中部向上凸起部分形成JFET区(6)，JFET区(6)顶部设置有P型掺杂区(5)，所述P型掺杂区(5)上部两侧有第一N型高掺杂区(3)；所述漏极结构包括N型漏区(12)和及其下的漏电极(13)；
在所述JFET区(6)两侧的N型外延层(14)的上表面设置有P型阱区(10)；在P型掺杂区(5)和JFET区(6)的侧面以及P型阱区(10)靠近JFET区(6)一侧的上表面覆盖有第一绝缘介质(4)，第一绝缘介质(4)呈“L”字型结构；所述P型阱区(10)上部设置有第二N型高掺杂区(9)，且第二N型高掺杂区(9)与JFET区(6)的侧面有间距，即第一绝缘介质(4)覆盖JFET区(6)与第二N型高掺杂区(9)之间的P型阱区(10)上表面，且还覆盖部分第二N型高掺杂区(9)的上表面，第一绝缘介质(4)与位于第一绝缘介质(4)底部上表面的栅电极(7)构成栅极结构；在P型阱区(10)远离JFET区(6)一侧的上表面有第一导电材料(8)，第一导电材料(8)覆盖在部分第二N型高掺杂区(9)的上表面，且第一导电材料(8)与所述栅极结构有间距；在栅电极(7)上有第二绝缘介质(15)，在第二绝缘介质(15)上有控制栅极(2)，所述控制栅极(2)与栅电极(7)被第二绝缘介质(15)隔开，第二绝缘介质(15)、控制栅极(2)的侧面与第一绝缘介质(4)接触；
所述第一N型高掺杂区(3)和P型掺杂区(5)上有第二导电材料(1)，第二导电材料(1)的两侧与第一绝缘介质(4)接触；所述第一导电材料(8)与第二导电材料(1)共同引出端为源极；
其中，第二导电材料(1)、控制栅极(2)、第一N型高掺杂区(3)、第一绝缘介质(4)、P型掺杂区(5)、JFET区(6)、N型漂移区(11)、N型漏区(12)与漏电极(13)构成续流二极管。
2.根据权利要求1所述的一种具有集成续流二极管的GaN纵向场效应晶体管，其特征在于，所述控制栅极(2)与源极相连。
3.根据权利要求1所述的一种具有集成续流二极管的GaN纵向场效应晶体管，其特征在于，所述控制栅极(2)接固定电位。
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ON-Resistance in Vertical Power FinFETs;Xiao, M; Palacios, T; Zhang, YH;《IEEE TRANSACTIONS ON ELECTRON DEVICES》;20190930;第66卷(第9期);3903-3909 *

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