JP7030515B2 - 逆導通半導体装置 - Google Patents

逆導通半導体装置 Download PDF

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Publication number
JP7030515B2
JP7030515B2 JP2017533808A JP2017533808A JP7030515B2 JP 7030515 B2 JP7030515 B2 JP 7030515B2 JP 2017533808 A JP2017533808 A JP 2017533808A JP 2017533808 A JP2017533808 A JP 2017533808A JP 7030515 B2 JP7030515 B2 JP 7030515B2
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layer
region
reverse conduction
protective layer
mos
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JP2018504778A5 (enExample
JP2018504778A (ja
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ストラスタ，リウタウラス
コルバセ，キアーラ
レ・ガロ，マヌエル
ラヒモ，ムナフ
コプタ，アルノスト
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Hitachi Energy Ltd
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Hitachi Energy Switzerland AG
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D12/00—Bipolar devices controlled by the field effect, e.g. insulated-gate bipolar transistors [IGBT]
    • H10D12/411—Insulated-gate bipolar transistors [IGBT]
    • H10D12/441—Vertical IGBTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D12/00—Bipolar devices controlled by the field effect, e.g. insulated-gate bipolar transistors [IGBT]
    • H10D12/411—Insulated-gate bipolar transistors [IGBT]
    • H10D12/441—Vertical IGBTs
    • H10D12/461—Vertical IGBTs having non-planar surfaces, e.g. having trenches, recesses or pillars in the surfaces of the emitter, base or collector regions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/64—Double-diffused metal-oxide semiconductor [DMOS] FETs
    • H10D30/65—Lateral DMOS [LDMOS] FETs
    • H10D30/655—Lateral DMOS [LDMOS] FETs having edge termination structures
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/64—Double-diffused metal-oxide semiconductor [DMOS] FETs
    • H10D30/66—Vertical DMOS [VDMOS] FETs
    • H10D30/665—Vertical DMOS [VDMOS] FETs having edge termination structures
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/102—Constructional design considerations for preventing surface leakage or controlling electric field concentration
    • H10D62/103—Constructional design considerations for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse-biased devices
    • H10D62/105—Constructional design considerations for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse-biased devices by having particular doping profiles, shapes or arrangements of PN junctions; by having supplementary regions, e.g. junction termination extension [JTE] 
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/102—Constructional design considerations for preventing surface leakage or controlling electric field concentration
    • H10D62/103—Constructional design considerations for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse-biased devices
    • H10D62/105—Constructional design considerations for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse-biased devices by having particular doping profiles, shapes or arrangements of PN junctions; by having supplementary regions, e.g. junction termination extension [JTE] 
    • H10D62/106—Constructional design considerations for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse-biased devices by having particular doping profiles, shapes or arrangements of PN junctions; by having supplementary regions, e.g. junction termination extension [JTE]  having supplementary regions doped oppositely to or in rectifying contact with regions of the semiconductor bodies, e.g. guard rings with PN or Schottky junctions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/102—Constructional design considerations for preventing surface leakage or controlling electric field concentration
    • H10D62/103—Constructional design considerations for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse-biased devices
    • H10D62/105—Constructional design considerations for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse-biased devices by having particular doping profiles, shapes or arrangements of PN junctions; by having supplementary regions, e.g. junction termination extension [JTE] 
    • H10D62/109—Reduced surface field [RESURF] PN junction structures
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/124—Shapes, relative sizes or dispositions of the regions of semiconductor bodies or of junctions between the regions
    • H10D62/126—Top-view geometrical layouts of the regions or the junctions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/124—Shapes, relative sizes or dispositions of the regions of semiconductor bodies or of junctions between the regions
    • H10D62/126—Top-view geometrical layouts of the regions or the junctions
    • H10D62/127—Top-view geometrical layouts of the regions or the junctions of cellular field-effect devices, e.g. multicellular DMOS transistors or IGBTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/13—Semiconductor regions connected to electrodes carrying current to be rectified, amplified or switched, e.g. source or drain regions
    • H10D62/149—Source or drain regions of field-effect devices
    • H10D62/151—Source or drain regions of field-effect devices of IGFETs 
    • H10D62/152—Source regions of DMOS transistors
    • H10D62/154—Dispositions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/17—Semiconductor regions connected to electrodes not carrying current to be rectified, amplified or switched, e.g. channel regions
    • H10D62/177—Base regions of bipolar transistors, e.g. BJTs or IGBTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/17—Semiconductor regions connected to electrodes not carrying current to be rectified, amplified or switched, e.g. channel regions
    • H10D62/393—Body regions of DMOS transistors or IGBTs 
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/60—Impurity distributions or concentrations
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/111—Field plates
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/101—Integrated devices comprising main components and built-in components, e.g. IGBT having built-in freewheel diode
    • H10D84/151—LDMOS having built-in components
    • H10D84/153—LDMOS having built-in components the built-in component being PN junction diodes
    • H10D84/154—LDMOS having built-in components the built-in component being PN junction diodes in antiparallel diode configurations
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/13—Semiconductor regions connected to electrodes carrying current to be rectified, amplified or switched, e.g. source or drain regions
    • H10D62/141—Anode or cathode regions of thyristors; Collector or emitter regions of gated bipolar-mode devices, e.g. of IGBTs
    • H10D62/142—Anode regions of thyristors or collector regions of gated bipolar-mode devices

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  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Thyristors (AREA)
JP2017533808A 2014-12-23 2015-12-22 逆導通半導体装置 Active JP7030515B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
EP14200101 2014-12-23
EP14200101.5 2014-12-23
PCT/EP2015/080947 WO2016102549A1 (en) 2014-12-23 2015-12-22 Reverse-conducting semiconductor device

Publications (3)

Publication Number Publication Date
JP2018504778A JP2018504778A (ja) 2018-02-15
JP2018504778A5 JP2018504778A5 (enExample) 2019-01-17
JP7030515B2 true JP7030515B2 (ja) 2022-03-07

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JP2017533808A Active JP7030515B2 (ja) 2014-12-23 2015-12-22 逆導通半導体装置

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US (1) US10109725B2 (enExample)
EP (1) EP3238260B1 (enExample)
JP (1) JP7030515B2 (enExample)
CN (1) CN107112353B (enExample)
WO (1) WO2016102549A1 (enExample)

Families Citing this family (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP6649102B2 (ja) * 2016-02-05 2020-02-19 ルネサスエレクトロニクス株式会社 半導体装置
JP6854654B2 (ja) * 2017-01-26 2021-04-07 ローム株式会社 半導体装置
JP6897166B2 (ja) * 2017-03-03 2021-06-30 株式会社豊田中央研究所 半導体装置
US10355132B2 (en) 2017-03-20 2019-07-16 North Carolina State University Power MOSFETs with superior high frequency figure-of-merit
JP6804379B2 (ja) * 2017-04-24 2020-12-23 三菱電機株式会社 半導体装置
DE102018102279A1 (de) * 2018-02-01 2019-08-01 Infineon Technologies Ag Halbleiterbauelement mit randabschlussbereich
CN111211157A (zh) * 2018-11-21 2020-05-29 深圳比亚迪微电子有限公司 快恢复二极管及其制备方法
CN110190029B (zh) * 2019-04-28 2021-07-09 爱特微(张家港)半导体技术有限公司 一种功率半导体器件的制备方法
DE102019111786A1 (de) * 2019-05-07 2020-11-12 Infineon Technologies Ag Leistungshalbleitervorrichtung und Verfahren
JP7227110B2 (ja) * 2019-09-18 2023-02-21 株式会社東芝 半導体装置
CN110610986B (zh) * 2019-10-09 2023-03-14 重庆邮电大学 一种利用结终端集成横向续流二极管的rc-igbt器件
CN110797403B (zh) * 2019-10-18 2023-08-01 上海睿驱微电子科技有限公司 一种rc-igbt半导体装置
CN110854180B (zh) * 2019-11-27 2024-04-16 吉林华微电子股份有限公司 终端结构的制造方法、终端结构及半导体器件
US20210273090A1 (en) * 2020-03-02 2021-09-02 Cree, Inc. Semiconductor die with improved edge termination
CN113782592B (zh) * 2021-09-10 2023-08-29 重庆邮电大学 一种衬底集成反并联续流二极管的rc-ligbt器件

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JP2002222952A (ja) 2001-01-26 2002-08-09 Toshiba Corp 高耐圧半導体装置
JP2010141170A (ja) 2008-12-12 2010-06-24 Denso Corp 半導体装置の製造方法
JP2013533619A (ja) 2010-06-17 2013-08-22 アーベーベー・テヒノロギー・アーゲー パワー半導体デバイス
WO2013153668A1 (ja) 2012-04-13 2013-10-17 三菱電機株式会社 ダイオード
WO2014087522A1 (ja) 2012-12-06 2014-06-12 三菱電機株式会社 半導体装置
JP2014175377A (ja) 2013-03-07 2014-09-22 Mitsubishi Electric Corp 炭化珪素半導体装置およびその製造方法
JP2014192433A (ja) 2013-03-28 2014-10-06 Sanken Electric Co Ltd 半導体装置
JP2015126192A (ja) 2013-12-27 2015-07-06 株式会社豊田中央研究所 縦型半導体装置

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JPH0799307A (ja) * 1993-09-29 1995-04-11 Fuji Electric Co Ltd 半導体装置およびその製造方法
JP4905559B2 (ja) * 2009-01-27 2012-03-28 株式会社デンソー 半導体装置
EP2249392B1 (en) * 2009-04-29 2020-05-20 ABB Power Grids Switzerland AG Reverse-conducting semiconductor device
US8716746B2 (en) * 2010-08-17 2014-05-06 Denso Corporation Semiconductor device
JP5787655B2 (ja) * 2010-11-26 2015-09-30 三菱電機株式会社 炭化珪素半導体装置およびその製造方法
JP5459403B2 (ja) * 2011-03-28 2014-04-02 トヨタ自動車株式会社 縦型半導体装置
JP2014038937A (ja) * 2012-08-16 2014-02-27 Mitsubishi Electric Corp 半導体装置
CN104704635A (zh) 2012-10-02 2015-06-10 三菱电机株式会社 半导体装置及其制造方法
JP5939127B2 (ja) * 2012-10-22 2016-06-22 住友電気工業株式会社 炭化珪素半導体装置
JP6261494B2 (ja) * 2014-12-03 2018-01-17 三菱電機株式会社 電力用半導体装置

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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2002222952A (ja) 2001-01-26 2002-08-09 Toshiba Corp 高耐圧半導体装置
JP2010141170A (ja) 2008-12-12 2010-06-24 Denso Corp 半導体装置の製造方法
JP2013533619A (ja) 2010-06-17 2013-08-22 アーベーベー・テヒノロギー・アーゲー パワー半導体デバイス
WO2013153668A1 (ja) 2012-04-13 2013-10-17 三菱電機株式会社 ダイオード
WO2014087522A1 (ja) 2012-12-06 2014-06-12 三菱電機株式会社 半導体装置
JP2014175377A (ja) 2013-03-07 2014-09-22 Mitsubishi Electric Corp 炭化珪素半導体装置およびその製造方法
JP2014192433A (ja) 2013-03-28 2014-10-06 Sanken Electric Co Ltd 半導体装置
JP2015126192A (ja) 2013-12-27 2015-07-06 株式会社豊田中央研究所 縦型半導体装置

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Ｗ．Ｃｈｅｎ ｅｔ ａｌ．，Ａ Ｓｎａｐｂａｃｋ Ｓｕｐｐｒｅｓｓｅｄ ｒｅｖｅｒｓｅ－ｃｏｎｄｕｃｔｉｎｇ ＩＧＢＴ ｗｉｔｈ ｂｕｉｌｔ－ｉｎ ｄｉｏｄｅ ｂｙ ｕｔｉｌｉｚｉｎｇ ｅｄｇｅ ｔｅｒｍｉｎａｔｉｏｎ，Ｓｕｐｅｒｌａｔｔｉｃｅ ａｎｄ Ｍｉｃｒｏｓｔｒｕｃｔｕｒｅｓ，ＮＬ，Ｅｌｓｅｖｉｅｒ Ｌｔｄ．，２０１４年 ３月１５日，Ｖｏｌ．７０，ｐｐ．１０９－１１６

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CN107112353B (zh) 2020-12-22
US10109725B2 (en) 2018-10-23
US20170294526A1 (en) 2017-10-12
CN107112353A (zh) 2017-08-29
WO2016102549A1 (en) 2016-06-30
EP3238260B1 (en) 2020-03-25
EP3238260A1 (en) 2017-11-01
JP2018504778A (ja) 2018-02-15

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