JP2020047789A5 - - Google Patents
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- JP2020047789A5 JP2020047789A5 JP2018175439A JP2018175439A JP2020047789A5 JP 2020047789 A5 JP2020047789 A5 JP 2020047789A5 JP 2018175439 A JP2018175439 A JP 2018175439A JP 2018175439 A JP2018175439 A JP 2018175439A JP 2020047789 A5 JP2020047789 A5 JP 2020047789A5
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- Prior art keywords
- semiconductor layer
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- gate electrode
- electrode
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- 239000004065 semiconductor Substances 0.000 claims 41
- 239000012535 impurity Substances 0.000 claims 3
Priority Applications (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2018175439A JP7027287B2 (ja) | 2018-09-19 | 2018-09-19 | 半導体装置 |
| CN201910011106.4A CN110931553B (zh) | 2018-09-19 | 2019-01-07 | 半导体装置 |
| US16/284,053 US12159927B2 (en) | 2018-09-19 | 2019-02-25 | Semiconductor device having gate electrodes on front side and back side |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2018175439A JP7027287B2 (ja) | 2018-09-19 | 2018-09-19 | 半導体装置 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2020047789A JP2020047789A (ja) | 2020-03-26 |
| JP2020047789A5 true JP2020047789A5 (enExample) | 2020-11-05 |
| JP7027287B2 JP7027287B2 (ja) | 2022-03-01 |
Family
ID=69774486
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2018175439A Active JP7027287B2 (ja) | 2018-09-19 | 2018-09-19 | 半導体装置 |
Country Status (3)
| Country | Link |
|---|---|
| US (1) | US12159927B2 (enExample) |
| JP (1) | JP7027287B2 (enExample) |
| CN (1) | CN110931553B (enExample) |
Families Citing this family (12)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US11101375B2 (en) | 2019-03-19 | 2021-08-24 | Kabushiki Kaisha Toshiba | Semiconductor device and method of controlling same |
| JP7346170B2 (ja) | 2019-08-30 | 2023-09-19 | 株式会社東芝 | 半導体装置及び半導体モジュール |
| JP7297709B2 (ja) | 2020-03-19 | 2023-06-26 | 株式会社東芝 | 半導体装置及び半導体回路 |
| JP7387562B2 (ja) | 2020-09-10 | 2023-11-28 | 株式会社東芝 | 半導体素子および半導体装置 |
| JP7330155B2 (ja) * | 2020-09-16 | 2023-08-21 | 株式会社東芝 | 半導体装置及び半導体回路 |
| JP7330154B2 (ja) | 2020-09-16 | 2023-08-21 | 株式会社東芝 | 半導体装置及び半導体回路 |
| JP7548776B2 (ja) | 2020-11-02 | 2024-09-10 | 株式会社東芝 | 半導体装置及び半導体モジュール |
| JP7722648B2 (ja) | 2020-12-04 | 2025-08-13 | 国立大学法人 東京大学 | 半導体装置 |
| JP7407757B2 (ja) * | 2021-03-17 | 2024-01-04 | 株式会社東芝 | 半導体装置 |
| JP7472068B2 (ja) | 2021-03-19 | 2024-04-22 | 株式会社東芝 | 半導体装置及び半導体回路 |
| CN115207112B (zh) | 2021-04-09 | 2025-08-26 | 株式会社东芝 | 半导体装置及半导体装置的控制方法 |
| CN116264244B (zh) * | 2021-12-15 | 2024-12-24 | 苏州东微半导体股份有限公司 | Igbt器件 |
Family Cites Families (20)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CA1200322A (en) * | 1982-12-13 | 1986-02-04 | General Electric Company | Bidirectional insulated-gate rectifier structures and method of operation |
| US5124773A (en) * | 1987-02-26 | 1992-06-23 | Kabushiki Kaisha Toshiba | Conductivity-modulation metal oxide semiconductor field effect transistor |
| JPH0821713B2 (ja) * | 1987-02-26 | 1996-03-04 | 株式会社東芝 | 導電変調型ｍｏｓｆｅｔ |
| US5144401A (en) * | 1987-02-26 | 1992-09-01 | Kabushiki Kaisha Toshiba | Turn-on/off driving technique for insulated gate thyristor |
| JP3124611B2 (ja) * | 1992-01-16 | 2001-01-15 | 日本碍子株式会社 | Ｍｏｓアノードショート補助ゲート構造を有する半導体素子 |
| JP3111725B2 (ja) | 1993-02-04 | 2000-11-27 | 富士電機株式会社 | デュアルゲート半導体装置 |
| JP3278497B2 (ja) | 1993-06-29 | 2002-04-30 | 株式会社東芝 | 絶縁ゲート型電力用半導体素子 |
| US5483087A (en) * | 1994-07-08 | 1996-01-09 | International Rectifier Corporation | Bidirectional thyristor with MOS turn-off capability with a single gate |
| JP4167313B2 (ja) * | 1997-03-18 | 2008-10-15 | 株式会社東芝 | 高耐圧電力用半導体装置 |
| JP2003158269A (ja) | 2001-11-20 | 2003-05-30 | Yaskawa Electric Corp | 絶縁ゲートバイポーラトランジスタ |
| JP4703138B2 (ja) * | 2004-06-18 | 2011-06-15 | 株式会社東芝 | 絶縁ゲート型半導体装置 |
| JP2008053610A (ja) | 2006-08-28 | 2008-03-06 | Fuji Electric Device Technology Co Ltd | 絶縁ゲート型バイポーラトランジスタ |
| JP2010251517A (ja) | 2009-04-15 | 2010-11-04 | Tokyo Electric Power Co Inc:The | パワー半導体素子 |
| DE102011014875B3 (de) | 2011-03-23 | 2012-04-19 | Heraeus Quarzglas Gmbh & Co. Kg | Verfahren für die Herstellung poröser Granulatteilchen aus anorganischem Werkstoff sowie deren Verwendung |
| US9742385B2 (en) * | 2013-06-24 | 2017-08-22 | Ideal Power, Inc. | Bidirectional semiconductor switch with passive turnoff |
| JP6158058B2 (ja) * | 2013-12-04 | 2017-07-05 | 株式会社東芝 | 半導体装置 |
| CN106170861B (zh) | 2014-01-16 | 2018-12-28 | 理想能量有限公司 | 对表面电荷敏感性降低的结构和方法 |
| US9553145B2 (en) * | 2014-09-03 | 2017-01-24 | Globalfoundries Inc. | Lateral bipolar junction transistors on a silicon-on-insulator substrate with a thin device layer thickness |
| US20160181409A1 (en) * | 2014-10-20 | 2016-06-23 | Ideal Power Inc. | Bidirectional Power Switching with Bipolar Conduction and with Two Control Terminals Gated by Two Merged Transistors |
| JP6574744B2 (ja) * | 2016-09-16 | 2019-09-11 | 株式会社東芝 | 半導体装置 |
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2018
- 2018-09-19 JP JP2018175439A patent/JP7027287B2/ja active Active
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2019
- 2019-01-07 CN CN201910011106.4A patent/CN110931553B/zh active Active
- 2019-02-25 US US16/284,053 patent/US12159927B2/en active Active