CN110931553B - 半导体装置 - Google Patents

半导体装置 Download PDF

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Publication number
CN110931553B
CN110931553B CN201910011106.4A CN201910011106A CN110931553B CN 110931553 B CN110931553 B CN 110931553B CN 201910011106 A CN201910011106 A CN 201910011106A CN 110931553 B CN110931553 B CN 110931553B
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China
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region
collector
gate electrode
electrode
semiconductor layer
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Chinese (zh)
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CN110931553A (zh
Inventor
岩鍜治阳子
末代知子
诹访刚史
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Toshiba Corp
Toshiba Electronic Devices and Storage Corp
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Toshiba Corp
Toshiba Electronic Devices and Storage Corp
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D12/00—Bipolar devices controlled by the field effect, e.g. insulated-gate bipolar transistors [IGBT]
    • H10D12/411—Insulated-gate bipolar transistors [IGBT]
    • H10D12/441—Vertical IGBTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D12/00—Bipolar devices controlled by the field effect, e.g. insulated-gate bipolar transistors [IGBT]
    • H10D12/411—Insulated-gate bipolar transistors [IGBT]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D12/00—Bipolar devices controlled by the field effect, e.g. insulated-gate bipolar transistors [IGBT]
    • H10D12/01—Manufacture or treatment
    • H10D12/031—Manufacture or treatment of IGBTs
    • H10D12/032—Manufacture or treatment of IGBTs of vertical IGBTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/102—Constructional design considerations for preventing surface leakage or controlling electric field concentration
    • H10D62/103—Constructional design considerations for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse-biased devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/124—Shapes, relative sizes or dispositions of the regions of semiconductor bodies or of junctions between the regions
    • H10D62/125—Shapes of junctions between the regions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/124—Shapes, relative sizes or dispositions of the regions of semiconductor bodies or of junctions between the regions
    • H10D62/126—Top-view geometrical layouts of the regions or the junctions
    • H10D62/127—Top-view geometrical layouts of the regions or the junctions of cellular field-effect devices, e.g. multicellular DMOS transistors or IGBTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/13—Semiconductor regions connected to electrodes carrying current to be rectified, amplified or switched, e.g. source or drain regions
    • H10D62/133—Emitter regions of BJTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/13—Semiconductor regions connected to electrodes carrying current to be rectified, amplified or switched, e.g. source or drain regions
    • H10D62/137—Collector regions of BJTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/13—Semiconductor regions connected to electrodes carrying current to be rectified, amplified or switched, e.g. source or drain regions
    • H10D62/141—Anode or cathode regions of thyristors; Collector or emitter regions of gated bipolar-mode devices, e.g. of IGBTs
    • H10D62/142—Anode regions of thyristors or collector regions of gated bipolar-mode devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/17—Semiconductor regions connected to electrodes not carrying current to be rectified, amplified or switched, e.g. channel regions
    • H10D62/393—Body regions of DMOS transistors or IGBTs 
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
    • H10D62/83—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group IV materials, e.g. B-doped Si or undoped Ge
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/20—Electrodes characterised by their shapes, relative sizes or dispositions 
    • H10D64/23—Electrodes carrying the current to be rectified, amplified, oscillated or switched, e.g. sources, drains, anodes or cathodes
    • H10D64/231—Emitter or collector electrodes for bipolar transistors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/20—Electrodes characterised by their shapes, relative sizes or dispositions 
    • H10D64/27—Electrodes not carrying the current to be rectified, amplified, oscillated or switched, e.g. gates
    • H10D64/311—Gate electrodes for field-effect devices
    • H10D64/411—Gate electrodes for field-effect devices for FETs
    • H10D64/511—Gate electrodes for field-effect devices for FETs for IGFETs
    • H10D64/512—Disposition of the gate electrodes, e.g. buried gates
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/20—Electrodes characterised by their shapes, relative sizes or dispositions 
    • H10D64/27—Electrodes not carrying the current to be rectified, amplified, oscillated or switched, e.g. gates
    • H10D64/311—Gate electrodes for field-effect devices
    • H10D64/411—Gate electrodes for field-effect devices for FETs
    • H10D64/511—Gate electrodes for field-effect devices for FETs for IGFETs
    • H10D64/517—Gate electrodes for field-effect devices for FETs for IGFETs characterised by the conducting layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/20—Electrodes characterised by their shapes, relative sizes or dispositions 
    • H10D64/27—Electrodes not carrying the current to be rectified, amplified, oscillated or switched, e.g. gates
    • H10D64/311—Gate electrodes for field-effect devices
    • H10D64/411—Gate electrodes for field-effect devices for FETs
    • H10D64/511—Gate electrodes for field-effect devices for FETs for IGFETs
    • H10D64/517—Gate electrodes for field-effect devices for FETs for IGFETs characterised by the conducting layers
    • H10D64/519—Gate electrodes for field-effect devices for FETs for IGFETs characterised by the conducting layers characterised by their top-view geometrical layouts
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D12/00—Bipolar devices controlled by the field effect, e.g. insulated-gate bipolar transistors [IGBT]
    • H10D12/211—Gated diodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D18/00—Thyristors
    • H10D18/80—Bidirectional devices, e.g. triacs 

Landscapes

  • Electrodes Of Semiconductors (AREA)
  • Insulated Gate Type Field-Effect Transistor (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
CN201910011106.4A 2018-09-19 2019-01-07 半导体装置 Active CN110931553B (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2018-175439 2018-09-19
JP2018175439A JP7027287B2 (ja) 2018-09-19 2018-09-19 半導体装置

Publications (2)

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CN110931553A CN110931553A (zh) 2020-03-27
CN110931553B true CN110931553B (zh) 2024-01-02

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US (1) US12159927B2 (enExample)
JP (1) JP7027287B2 (enExample)
CN (1) CN110931553B (enExample)

Families Citing this family (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US11101375B2 (en) 2019-03-19 2021-08-24 Kabushiki Kaisha Toshiba Semiconductor device and method of controlling same
JP7346170B2 (ja) 2019-08-30 2023-09-19 株式会社東芝 半導体装置及び半導体モジュール
JP7297709B2 (ja) 2020-03-19 2023-06-26 株式会社東芝 半導体装置及び半導体回路
JP7387562B2 (ja) 2020-09-10 2023-11-28 株式会社東芝 半導体素子および半導体装置
JP7330155B2 (ja) 2020-09-16 2023-08-21 株式会社東芝 半導体装置及び半導体回路
JP7330154B2 (ja) 2020-09-16 2023-08-21 株式会社東芝 半導体装置及び半導体回路
JP7548776B2 (ja) * 2020-11-02 2024-09-10 株式会社東芝 半導体装置及び半導体モジュール
JP7722648B2 (ja) 2020-12-04 2025-08-13 国立大学法人 東京大学 半導体装置
JP7407757B2 (ja) 2021-03-17 2024-01-04 株式会社東芝 半導体装置
JP7472068B2 (ja) 2021-03-19 2024-04-22 株式会社東芝 半導体装置及び半導体回路
CN115207112B (zh) 2021-04-09 2025-08-26 株式会社东芝 半导体装置及半导体装置的控制方法
CN116264244B (zh) * 2021-12-15 2024-12-24 苏州东微半导体股份有限公司 Igbt器件

Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6457674A (en) * 1987-02-26 1989-03-03 Toshiba Corp Conductivity-modulation mosfet
US5124773A (en) * 1987-02-26 1992-06-23 Kabushiki Kaisha Toshiba Conductivity-modulation metal oxide semiconductor field effect transistor
US5144401A (en) * 1987-02-26 1992-09-01 Kabushiki Kaisha Toshiba Turn-on/off driving technique for insulated gate thyristor
JPH05190835A (ja) * 1992-01-16 1993-07-30 Toyo Electric Mfg Co Ltd Ｍｏｓアノードショート補助ゲート構造を有する半導体素子
US5483087A (en) * 1994-07-08 1996-01-09 International Rectifier Corporation Bidirectional thyristor with MOS turn-off capability with a single gate
JP2008053610A (ja) * 2006-08-28 2008-03-06 Fuji Electric Device Technology Co Ltd 絶縁ゲート型バイポーラトランジスタ
JP2017509141A (ja) * 2014-01-16 2017-03-30 アイディール パワー インコーポレイテッド 表面電荷に対して低減された感度を有する構造及び方法

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CA1200322A (en) * 1982-12-13 1986-02-04 General Electric Company Bidirectional insulated-gate rectifier structures and method of operation
JP3111725B2 (ja) 1993-02-04 2000-11-27 富士電機株式会社 デュアルゲート半導体装置
JP3278497B2 (ja) 1993-06-29 2002-04-30 株式会社東芝 絶縁ゲート型電力用半導体素子
JP4167313B2 (ja) * 1997-03-18 2008-10-15 株式会社東芝 高耐圧電力用半導体装置
JP2003158269A (ja) 2001-11-20 2003-05-30 Yaskawa Electric Corp 絶縁ゲートバイポーラトランジスタ
JP4703138B2 (ja) * 2004-06-18 2011-06-15 株式会社東芝 絶縁ゲート型半導体装置
JP2010251517A (ja) 2009-04-15 2010-11-04 Tokyo Electric Power Co Inc:The パワー半導体素子
DE102011014875B3 (de) 2011-03-23 2012-04-19 Heraeus Quarzglas Gmbh & Co. Kg Verfahren für die Herstellung poröser Granulatteilchen aus anorganischem Werkstoff sowie deren Verwendung
US9742385B2 (en) * 2013-06-24 2017-08-22 Ideal Power, Inc. Bidirectional semiconductor switch with passive turnoff
JP6158058B2 (ja) * 2013-12-04 2017-07-05 株式会社東芝 半導体装置
US9553145B2 (en) * 2014-09-03 2017-01-24 Globalfoundries Inc. Lateral bipolar junction transistors on a silicon-on-insulator substrate with a thin device layer thickness
WO2016064923A1 (en) * 2014-10-20 2016-04-28 Ideal Power Inc. Bidirectional power switching with bipolar conduction and with two control terminals gated by two merged transistors
JP6574744B2 (ja) * 2016-09-16 2019-09-11 株式会社東芝 半導体装置

Patent Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6457674A (en) * 1987-02-26 1989-03-03 Toshiba Corp Conductivity-modulation mosfet
US5124773A (en) * 1987-02-26 1992-06-23 Kabushiki Kaisha Toshiba Conductivity-modulation metal oxide semiconductor field effect transistor
US5144401A (en) * 1987-02-26 1992-09-01 Kabushiki Kaisha Toshiba Turn-on/off driving technique for insulated gate thyristor
JPH05190835A (ja) * 1992-01-16 1993-07-30 Toyo Electric Mfg Co Ltd Ｍｏｓアノードショート補助ゲート構造を有する半導体素子
US5483087A (en) * 1994-07-08 1996-01-09 International Rectifier Corporation Bidirectional thyristor with MOS turn-off capability with a single gate
JP2008053610A (ja) * 2006-08-28 2008-03-06 Fuji Electric Device Technology Co Ltd 絶縁ゲート型バイポーラトランジスタ
JP2017509141A (ja) * 2014-01-16 2017-03-30 アイディール パワー インコーポレイテッド 表面電荷に対して低減された感度を有する構造及び方法

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US20200091323A1 (en) 2020-03-19
JP2020047789A (ja) 2020-03-26
CN110931553A (zh) 2020-03-27
US12159927B2 (en) 2024-12-03
JP7027287B2 (ja) 2022-03-01

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