JP2012160584A5 - - Google Patents

Download PDF

Info

Publication number
JP2012160584A5
JP2012160584A5 JP2011019372A JP2011019372A JP2012160584A5 JP 2012160584 A5 JP2012160584 A5 JP 2012160584A5 JP 2011019372 A JP2011019372 A JP 2011019372A JP 2011019372 A JP2011019372 A JP 2011019372A JP 2012160584 A5 JP2012160584 A5 JP 2012160584A5
Authority
JP
Japan
Prior art keywords
region
inversion layer
concentration
layer
type
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2011019372A
Other languages
English (en)
Japanese (ja)
Other versions
JP2012160584A (ja
Filing date
Publication date
Application filed filed Critical
Priority to JP2011019372A priority Critical patent/JP2012160584A/ja
Priority claimed from JP2011019372A external-priority patent/JP2012160584A/ja
Priority to EP11857887.1A priority patent/EP2672516A4/en
Priority to PCT/JP2011/072992 priority patent/WO2012105088A1/ja
Priority to CN201180063838.XA priority patent/CN103843141A/zh
Priority to KR1020137015257A priority patent/KR20140001947A/ko
Priority to TW100137035A priority patent/TW201234592A/zh
Priority to US13/364,174 priority patent/US20120193643A1/en
Publication of JP2012160584A publication Critical patent/JP2012160584A/ja
Publication of JP2012160584A5 publication Critical patent/JP2012160584A5/ja
Pending legal-status Critical Current

Links

JP2011019372A 2011-02-01 2011-02-01 半導体装置 Pending JP2012160584A (ja)

Priority Applications (7)

Application Number Priority Date Filing Date Title
JP2011019372A JP2012160584A (ja) 2011-02-01 2011-02-01 半導体装置
EP11857887.1A EP2672516A4 (en) 2011-02-01 2011-10-05 SEMICONDUCTOR COMPONENT
PCT/JP2011/072992 WO2012105088A1 (ja) 2011-02-01 2011-10-05 半導体装置
CN201180063838.XA CN103843141A (zh) 2011-02-01 2011-10-05 半导体器件
KR1020137015257A KR20140001947A (ko) 2011-02-01 2011-10-05 반도체 장치
TW100137035A TW201234592A (en) 2011-02-01 2011-10-12 Semiconductor device
US13/364,174 US20120193643A1 (en) 2011-02-01 2012-02-01 Semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2011019372A JP2012160584A (ja) 2011-02-01 2011-02-01 半導体装置

Publications (2)

Publication Number Publication Date
JP2012160584A JP2012160584A (ja) 2012-08-23
JP2012160584A5 true JP2012160584A5 (enExample) 2013-11-21

Family

ID=46576607

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2011019372A Pending JP2012160584A (ja) 2011-02-01 2011-02-01 半導体装置

Country Status (7)

Country Link
US (1) US20120193643A1 (enExample)
EP (1) EP2672516A4 (enExample)
JP (1) JP2012160584A (enExample)
KR (1) KR20140001947A (enExample)
CN (1) CN103843141A (enExample)
TW (1) TW201234592A (enExample)
WO (1) WO2012105088A1 (enExample)

Families Citing this family (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9447767B2 (en) * 2012-07-03 2016-09-20 Fuji Electric Co., Ltd. Single chip igniter and internal combustion engine ignition device
US9012984B2 (en) 2013-03-13 2015-04-21 Cree, Inc. Field effect transistor devices with regrown p-layers
US9306061B2 (en) 2013-03-13 2016-04-05 Cree, Inc. Field effect transistor devices with protective regions
US9240476B2 (en) * 2013-03-13 2016-01-19 Cree, Inc. Field effect transistor devices with buried well regions and epitaxial layers
US9142668B2 (en) 2013-03-13 2015-09-22 Cree, Inc. Field effect transistor devices with buried well protection regions
JP2015053462A (ja) * 2013-08-06 2015-03-19 住友電気工業株式会社 炭化珪素半導体装置およびその製造方法
JP6256148B2 (ja) * 2014-03-27 2018-01-10 住友電気工業株式会社 炭化珪素半導体装置およびその製造方法
JP2016029707A (ja) * 2014-07-24 2016-03-03 住友電気工業株式会社 炭化珪素半導体装置
JP6481511B2 (ja) * 2014-07-24 2019-03-13 住友電気工業株式会社 炭化珪素半導体装置
DE102016226237B4 (de) * 2016-02-01 2024-07-18 Fuji Electric Co., Ltd. Siliziumcarbid-halbleitervorrichtung
JP6115678B1 (ja) 2016-02-01 2017-04-19 富士電機株式会社 炭化珪素半導体装置および炭化珪素半導体装置の製造方法
US11063122B2 (en) * 2016-11-01 2021-07-13 Mitsubishi Electric Corporation Silicon carbide semiconductor device and power conversion device
JP7155634B2 (ja) * 2018-06-12 2022-10-19 富士電機株式会社 炭化珪素半導体装置および炭化珪素半導体装置の製造方法
US10957791B2 (en) * 2019-03-08 2021-03-23 Infineon Technologies Americas Corp. Power device with low gate charge and low figure of merit
US11658214B2 (en) 2021-01-12 2023-05-23 Semiconductor Components Industries, Llc MOSFET device with undulating channel
IT202100001934A1 (it) * 2021-01-29 2022-07-29 St Microelectronics Srl Dispositivo mosfet a conduzione verticale in carburo di silicio e relativo processo di fabbricazione
IT202100001895A1 (it) 2021-01-29 2022-07-29 St Microelectronics Srl Dispositivo mosfet a conduzione verticale in carburo di silicio per applicazioni di potenza e relativo processo di fabbricazione

Family Cites Families (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3428459B2 (ja) * 1998-09-01 2003-07-22 富士電機株式会社 炭化けい素ｎチャネルＭＯＳ半導体素子およびその製造方法
JP4371521B2 (ja) * 2000-03-06 2009-11-25 株式会社東芝 電力用半導体素子およびその製造方法
US7217950B2 (en) * 2002-10-11 2007-05-15 Nissan Motor Co., Ltd. Insulated gate tunnel-injection device having heterojunction and method for manufacturing the same
US7364978B2 (en) * 2003-04-25 2008-04-29 Sumitomo Electric Industries, Ltd. Method of fabricating semiconductor device
JP4620368B2 (ja) * 2004-03-08 2011-01-26 三菱電機株式会社 半導体装置の製造方法
WO2007029375A1 (ja) * 2005-09-08 2007-03-15 Mitsubishi Denki Kabushiki Kaisha 半導体装置および半導体装置の製造方法
JP5082853B2 (ja) * 2005-10-19 2012-11-28 三菱電機株式会社 Ｍｏｓｆｅｔ
JP4627272B2 (ja) * 2006-03-09 2011-02-09 三菱電機株式会社 炭化珪素半導体装置および炭化珪素半導体装置の製造方法
JP5119806B2 (ja) * 2007-08-27 2013-01-16 三菱電機株式会社 炭化珪素半導体装置およびその製造方法
WO2009142233A1 (ja) * 2008-05-20 2009-11-26 ローム株式会社 半導体装置
US8536582B2 (en) * 2008-12-01 2013-09-17 Cree, Inc. Stable power devices on low-angle off-cut silicon carbide crystals
JP5564890B2 (ja) * 2008-12-16 2014-08-06 住友電気工業株式会社 接合型電界効果トランジスタおよびその製造方法
IT1392577B1 (it) * 2008-12-30 2012-03-09 St Microelectronics Rousset Processo di fabbricazione di un dispositivo elettronico di potenza integrato in un substrato semiconduttore ad ampio intervallo di banda proibita e dispositivo elettronico cosi' ottenuto
US8653535B2 (en) * 2010-09-06 2014-02-18 Panasonic Corporation Silicon carbide semiconductor device having a contact region that includes a first region and a second region, and process for production thereof
KR20130141338A (ko) * 2010-12-22 2013-12-26 스미토모덴키고교가부시키가이샤 탄화규소 반도체 장치의 제조 방법
JP5777455B2 (ja) * 2011-09-08 2015-09-09 株式会社東芝 半導体装置および半導体装置の製造方法

Similar Documents

Publication Publication Date Title
JP2012160584A5 (enExample)
JP2013115433A5 (ja) 半導体素子
KR101830782B1 (ko) 그래핀을 포함하는 전극 구조체 및 전계효과 트랜지스터
KR20130022854A (ko) 튜너블 배리어를 구비한 그래핀 스위칭 소자
JP5513955B2 (ja) 半導体装置およびその製造方法
JP2016541114A5 (ja) 半導体構造、集積回路構造、及びそれらの製造方法
JP6301795B2 (ja) 半導体装置
JP2017216297A5 (enExample)
JP2014033200A5 (enExample)
JP6128927B2 (ja) チューナブルバリアを備えたグラフェンスイッチング素子
JP2011187949A5 (enExample)
JP2020047789A5 (enExample)
JP2012049491A5 (enExample)
WO2014024469A1 (ja) 炭化珪素半導体装置およびその製造方法
JP2017212425A5 (enExample)
WO2012137914A1 (ja) 炭化珪素縦型電界効果トランジスタ
JP2018537858A5 (enExample)
JP2019161188A5 (enExample)
US9634136B2 (en) Semiconductor device
JP6055918B2 (ja) 電界効果トランジスタ
JP2014093525A5 (enExample)
JP2017139293A5 (enExample)
JP2014187085A5 (enExample)
JP2019054169A5 (enExample)
JP2019036688A5 (ja) 半導体装置