JP2016029707A - 炭化珪素半導体装置 - Google Patents
炭化珪素半導体装置 Download PDFInfo
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- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 title claims abstract description 110
- 229910010271 silicon carbide Inorganic materials 0.000 title claims abstract description 109
- 239000004065 semiconductor Substances 0.000 title claims abstract description 52
- 239000012535 impurity Substances 0.000 claims description 52
- 239000002131 composite material Substances 0.000 claims description 19
- 230000015572 biosynthetic process Effects 0.000 claims description 6
- 239000000969 carrier Substances 0.000 claims description 6
- 210000000746 body region Anatomy 0.000 abstract description 59
- 230000001629 suppression Effects 0.000 abstract 1
- 239000010410 layer Substances 0.000 description 65
- 239000000758 substrate Substances 0.000 description 23
- 238000000034 method Methods 0.000 description 22
- 238000005530 etching Methods 0.000 description 15
- 238000004519 manufacturing process Methods 0.000 description 15
- 239000011229 interlayer Substances 0.000 description 13
- 239000000523 sample Substances 0.000 description 12
- 239000013078 crystal Substances 0.000 description 11
- 238000004458 analytical method Methods 0.000 description 9
- 125000004429 atom Chemical group 0.000 description 9
- 238000010586 diagram Methods 0.000 description 9
- 229910004298 SiO 2 Inorganic materials 0.000 description 8
- 230000006378 damage Effects 0.000 description 8
- 239000007789 gas Substances 0.000 description 8
- 238000005229 chemical vapour deposition Methods 0.000 description 6
- 230000000694 effects Effects 0.000 description 6
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 5
- 239000008186 active pharmaceutical agent Substances 0.000 description 5
- 238000004630 atomic force microscopy Methods 0.000 description 5
- 150000002500 ions Chemical class 0.000 description 5
- 229910052751 metal Inorganic materials 0.000 description 5
- 239000002184 metal Substances 0.000 description 5
- PXHVJJICTQNCMI-UHFFFAOYSA-N nickel Substances [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 5
- 230000001133 acceleration Effects 0.000 description 4
- 239000004020 conductor Substances 0.000 description 4
- 238000010438 heat treatment Methods 0.000 description 4
- 230000000737 periodic effect Effects 0.000 description 4
- 230000002093 peripheral effect Effects 0.000 description 4
- 229910052782 aluminium Inorganic materials 0.000 description 3
- 230000005684 electric field Effects 0.000 description 3
- 239000010931 gold Substances 0.000 description 3
- 239000000463 material Substances 0.000 description 3
- 238000005259 measurement Methods 0.000 description 3
- 239000012495 reaction gas Substances 0.000 description 3
- 229920006395 saturated elastomer Polymers 0.000 description 3
- ATUOYWHBWRKTHZ-UHFFFAOYSA-N Propane Chemical compound CCC ATUOYWHBWRKTHZ-UHFFFAOYSA-N 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 2
- 229910052796 boron Inorganic materials 0.000 description 2
- 125000004432 carbon atom Chemical group C* 0.000 description 2
- 230000015556 catabolic process Effects 0.000 description 2
- 239000000460 chlorine Substances 0.000 description 2
- 238000011156 evaluation Methods 0.000 description 2
- 229910052737 gold Inorganic materials 0.000 description 2
- 238000009413 insulation Methods 0.000 description 2
- 238000005468 ion implantation Methods 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 229910052757 nitrogen Inorganic materials 0.000 description 2
- 239000001301 oxygen Substances 0.000 description 2
- 229910052760 oxygen Inorganic materials 0.000 description 2
- 238000001020 plasma etching Methods 0.000 description 2
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 2
- 229920005591 polysilicon Polymers 0.000 description 2
- 238000002360 preparation method Methods 0.000 description 2
- 239000010936 titanium Substances 0.000 description 2
- 230000000007 visual effect Effects 0.000 description 2
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 1
- KZBUYRJDOAKODT-UHFFFAOYSA-N Chlorine Chemical compound ClCl KZBUYRJDOAKODT-UHFFFAOYSA-N 0.000 description 1
- ZAMOUSCENKQFHK-UHFFFAOYSA-N Chlorine atom Chemical compound [Cl] ZAMOUSCENKQFHK-UHFFFAOYSA-N 0.000 description 1
- MYMOFIZGZYHOMD-UHFFFAOYSA-N Dioxygen Chemical compound O=O MYMOFIZGZYHOMD-UHFFFAOYSA-N 0.000 description 1
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 1
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
- 229910018503 SF6 Inorganic materials 0.000 description 1
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 description 1
- 238000002441 X-ray diffraction Methods 0.000 description 1
- UGACIEPFGXRWCH-UHFFFAOYSA-N [Si].[Ti] Chemical compound [Si].[Ti] UGACIEPFGXRWCH-UHFFFAOYSA-N 0.000 description 1
- 230000004913 activation Effects 0.000 description 1
- CSDREXVUYHZDNP-UHFFFAOYSA-N alumanylidynesilicon Chemical compound [Al].[Si] CSDREXVUYHZDNP-UHFFFAOYSA-N 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 238000000137 annealing Methods 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 239000012159 carrier gas Substances 0.000 description 1
- 229910052801 chlorine Inorganic materials 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 238000005520 cutting process Methods 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 238000002050 diffraction method Methods 0.000 description 1
- 229910001873 dinitrogen Inorganic materials 0.000 description 1
- 229910001882 dioxygen Inorganic materials 0.000 description 1
- 230000005669 field effect Effects 0.000 description 1
- 238000007429 general method Methods 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 125000005843 halogen group Chemical group 0.000 description 1
- 238000009616 inductively coupled plasma Methods 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- 238000004518 low pressure chemical vapour deposition Methods 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 1
- PEUPIGGLJVUNEU-UHFFFAOYSA-N nickel silicon Chemical compound [Si].[Ni] PEUPIGGLJVUNEU-UHFFFAOYSA-N 0.000 description 1
- 229910052698 phosphorus Inorganic materials 0.000 description 1
- 239000011574 phosphorus Substances 0.000 description 1
- 239000001294 propane Substances 0.000 description 1
- 238000009738 saturating Methods 0.000 description 1
- 229910000077 silane Inorganic materials 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 235000012239 silicon dioxide Nutrition 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- SFZCNBIFKDRMGX-UHFFFAOYSA-N sulfur hexafluoride Chemical compound FS(F)(F)(F)(F)F SFZCNBIFKDRMGX-UHFFFAOYSA-N 0.000 description 1
- 229960000909 sulfur hexafluoride Drugs 0.000 description 1
- TXEYQDLBPFQVAA-UHFFFAOYSA-N tetrafluoromethane Chemical compound FC(F)(F)F TXEYQDLBPFQVAA-UHFFFAOYSA-N 0.000 description 1
- -1 titanium aluminum silicon Chemical compound 0.000 description 1
- FAQYAMRNWDIXMY-UHFFFAOYSA-N trichloroborane Chemical compound ClB(Cl)Cl FAQYAMRNWDIXMY-UHFFFAOYSA-N 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
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- H01L29/16—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only elements of Group IV of the Periodic System
- H01L29/1608—Silicon carbide
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- H01L29/76—Unipolar devices, e.g. field effect transistors
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- H01L29/78—Field effect transistors with field effect produced by an insulated gate
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- H01L21/0445—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising crystalline silicon carbide
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- H01L29/42312—Gate electrodes for field effect devices
- H01L29/42316—Gate electrodes for field effect devices for field-effect transistors
- H01L29/4232—Gate electrodes for field effect devices for field-effect transistors with insulated gate
- H01L29/42356—Disposition, e.g. buried gate electrode
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Abstract
【解決手段】MOSFET1は、炭化珪素層10と、ゲート絶縁膜15と、ゲート電極27と、ソース電極16と、ドレイン電極20とを備える。炭化珪素層10は、ドリフト領域12と、ボディ領域13と、ソース領域14とを含む。MOSFET1では、炭化珪素層10の厚み方向およびボディ領域13でのキャリアの移動方向に沿った断面において、ソース領域14とソース電極16との接触幅をn(μm)とし、チャネル領域CHに反転層が形成された状態におけるMOSFET1のオン抵抗をRonA(mΩcm2)としたときに、n<−0.02RonA+0.7の関係式が成立するように構成されている。
【選択図】図1
Description
珪素を用いたMOSFETでは、一定のゲート電圧下においてソース電極およびドレイン電極間に印加されるドレイン電圧を増加させた場合、ドレイン電圧が低い低電圧領域ではドレイン電流が増加し、かつドレイン電圧が高い高電圧領域ではドレイン電流が飽和する。そのため、負荷の短絡時にMOSFETに高電圧が印加された場合でも、大電流が流れないよう電流を抑制することができる。
次に、実施形態の具体例を、図面を参照しつつ説明する。なお、以下の図面において同一または相当する部分には同一の参照番号を付し、その説明は繰り返さない。また、本明細書中においては、個別面を()、集合面を{}でそれぞれ示す。また、負の指数については、結晶学上、”−”(バー)を数字の上に付けることになっているが、本明細書中では、数字の前に負の符号を付けている。
まず、図1および図2を参照して、実施形態1に係る炭化珪素半導体装置であるMOSFET1の構造について説明する。図1は、図2中の線分I−Iに沿ったMOSFET1の断面構造を示している。
次に、図8および図9を参照して、実施形態2に係る炭化珪素半導体装置であるMOSFET2の構造について説明する。図8は、図9中の線分VIII−VIIIに沿ったMOSFET2の断面構造を示している。
上述した側壁面SWは、特にボディ領域13上の部分において、特殊面を有する。特殊面を有する側壁面SWは、図22に示すように、面方位{0−33−8}を有する面S1(第1の面)を含む。言い換えれば、トレンチTRの側壁面SW上においてボディ領域13には、面S1を含む表面が設けられている。面S1は好ましくは面方位(0−33−8)を有する。
一般に、ポリタイプ4Hの炭化珪素単結晶を(000−1)面から見ると、図23に示すように、Si原子(またはC原子)は、A層の原子(図中の実線)と、この下に位置するB層の原子(図中の破線)と、この下に位置するC層の原子(図中の一点鎖線)と、この下に位置するB層の原子(図示せず)とが繰り返し設けられている。つまり4つの層ABCBを1周期としてABCBABCBABCB・・・のような周期的な積層構造が設けられている。
5 エピタキシャル成長層
10 炭化珪素層
10a 第1主面
10b 第2主面
11 炭化珪素基板
12 ドリフト領域
13 ボディ領域
14 ソース領域
15 ゲート絶縁膜
16 ソース電極
18 コンタクト領域
19 ソースパッド電極
20 ドレイン電極
21 層間絶縁膜
23 裏面パッド電極
27 ゲート電極
90 マスク層
BT 底面
CD チャネル方向
CH チャネル領域
S1 第1の面
S2 第2の面
S3 第3の面
SQ,SR 複合面
SW 側壁面
TQ 凹部
TR トレンチ
n 接触幅
Claims (13)
- 炭化珪素半導体装置であって、
第1主面および前記第1主面と反対側の第2主面を含む炭化珪素層を備え、
前記炭化珪素層は、
第1導電型を有する第1不純物領域と、
前記第1不純物領域と接触し、前記第1導電型と異なる第2導電型を有する第2不純物領域と、
前記第1主面の一部を構成し、前記第1不純物領域との間に前記第2不純物領域を挟むように形成され、前記第1導電型を有する第3不純物領域とを含み、さらに、
前記第2不純物領域上に形成されるゲート絶縁膜と、
前記ゲート絶縁膜上に形成されるゲート電極と、
前記第1主面において前記第3不純物領域に接触し、前記第3不純物領域と電気的に接続される第1電極と、
前記第2主面上に形成され、前記炭化珪素層と電気的に接続される第2電極とを備え、
前記ゲート電極に印加される電圧を制御することにより、前記第1電極と前記第2電極との間のキャリアの移動が制御されるように構成され、
前記炭化珪素層の厚み方向および前記第2不純物領域での前記キャリアの移動方向に沿った断面において、前記第3不純物領域と前記第1電極との接触幅をn(μm)とし、オン状態における前記炭化珪素半導体装置のオン抵抗をRonA(mΩcm2)としたときに、n<−0.02RonA+0.7の関係式が成立するように構成されている、炭化珪素半導体装置。 - n≦−0.02RonA+0.6の関係式が成立するように構成されている、請求項1に記載の炭化珪素半導体装置。
- 前記オン抵抗は、1mΩcm2以上15mΩcm2以下となるように構成されている、請求項1または請求項2に記載の炭化珪素半導体装置。
- 前記接触幅は、0.1μm以上である、請求項1〜請求項3のいずれか1項に記載の炭化珪素半導体装置。
- 前記第1電極と前記第3不純物領域との間の接触抵抗は、1×10-5mΩcm2以下となるように構成されている、請求項1〜請求項4のいずれか1項に記載の炭化珪素半導体装置。
- 前記キャリアの移動は、前記第2不純物領域のチャネル領域における反転層の形成の有無を制御することにより制御されるように構成され、
前記オン状態において、前記チャネル領域に前記反転層が形成されるように構成されている、請求項1〜請求項5のいずれか1項に記載の炭化珪素半導体装置。 - 前記第2不純物領域は、前記第1主面の一部を構成し、
前記第2不純物領域の前記第1主面に隣接する領域である前記チャネル領域における前記反転層の形成の有無が制御されるように構成されている、請求項6に記載の炭化珪素半導体装置。 - 前記炭化珪素層には、前記第1主面側に開口し、前記第2不純物領域の一部を露出させる壁面を有するトレンチが形成され、
前記第2不純物領域の前記壁面に隣接する領域である前記チャネル領域における前記反転層の形成の有無が制御されるように構成されている、請求項6に記載の炭化珪素半導体装置。 - 前記トレンチの前記壁面上において前記第2不純物領域には、面方位{0−33−8}を有する第1の面を含む表面が設けられている、請求項8に記載の炭化珪素半導体装置。
- 前記表面は前記第1の面を微視的に含み、前記表面はさらに、面方位{0−11−1}を有する第2の面を微視的に含む、請求項9に記載の炭化珪素半導体装置。
- 前記表面の前記第1および第2の面は、面方位{0−11−2}を有する複合面を構成している、請求項10に記載の炭化珪素半導体装置。
- 前記表面は{000−1}面に対して、巨視的に62°±10°のオフ角を有する、請求項11に記載の炭化珪素半導体装置。
- 前記ゲート電極に20Vの電圧が印加され、前記第1および第2電極の間に20V以上の電圧が印加されたときに、前記第3不純物領域における電流密度が30000A/cm2以下となるように構成されている、請求項1〜請求項12のいずれか1項に記載の炭化珪素半導体装置。
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