KR20140001947A - 반도체 장치 - Google Patents

반도체 장치 Download PDF

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Publication number
KR20140001947A
KR20140001947A KR1020137015257A KR20137015257A KR20140001947A KR 20140001947 A KR20140001947 A KR 20140001947A KR 1020137015257 A KR1020137015257 A KR 1020137015257A KR 20137015257 A KR20137015257 A KR 20137015257A KR 20140001947 A KR20140001947 A KR 20140001947A
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KR
South Korea
Prior art keywords
region
layer
inversion layer
concentration
semiconductor device
Prior art date
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Withdrawn
Application number
KR1020137015257A
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English (en)
Korean (ko)
Inventor
다케요시 마스다
도루 히요시
게이지 와다
Original Assignee
스미토모덴키고교가부시키가이샤
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
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Application filed by 스미토모덴키고교가부시키가이샤 filed Critical 스미토모덴키고교가부시키가이샤
Publication of KR20140001947A publication Critical patent/KR20140001947A/ko
Withdrawn legal-status Critical Current

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/64—Double-diffused metal-oxide semiconductor [DMOS] FETs
    • H10D30/66—Vertical DMOS [VDMOS] FETs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D12/00—Bipolar devices controlled by the field effect, e.g. insulated-gate bipolar transistors [IGBT]
    • H10D12/01—Manufacture or treatment
    • H10D12/031—Manufacture or treatment of IGBTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/01—Manufacture or treatment
    • H10D30/021—Manufacture or treatment of FETs having insulated gates [IGFET]
    • H10D30/028—Manufacture or treatment of FETs having insulated gates [IGFET] of double-diffused metal oxide semiconductor [DMOS] FETs
    • H10D30/0291—Manufacture or treatment of FETs having insulated gates [IGFET] of double-diffused metal oxide semiconductor [DMOS] FETs of vertical DMOS [VDMOS] FETs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/17—Semiconductor regions connected to electrodes not carrying current to be rectified, amplified or switched, e.g. channel regions
    • H10D62/393—Body regions of DMOS transistors or IGBTs 
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/40—Crystalline structures
    • H10D62/405—Orientations of crystalline planes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
    • H10D62/83—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group IV materials, e.g. B-doped Si or undoped Ge
    • H10D62/832—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group IV materials, e.g. B-doped Si or undoped Ge being Group IV materials comprising two or more elements, e.g. SiGe
    • H10D62/8325—Silicon carbide
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/60—Electrodes characterised by their materials
    • H10D64/62—Electrodes ohmically coupled to a semiconductor

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  • Electrodes Of Semiconductors (AREA)
  • Insulated Gate Type Field-Effect Transistor (AREA)
KR1020137015257A 2011-02-01 2011-10-05 반도체 장치 Withdrawn KR20140001947A (ko)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JPJP-P-2011-019372 2011-02-01
JP2011019372A JP2012160584A (ja) 2011-02-01 2011-02-01 半導体装置
PCT/JP2011/072992 WO2012105088A1 (ja) 2011-02-01 2011-10-05 半導体装置

Publications (1)

Publication Number Publication Date
KR20140001947A true KR20140001947A (ko) 2014-01-07

Family

ID=46576607

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020137015257A Withdrawn KR20140001947A (ko) 2011-02-01 2011-10-05 반도체 장치

Country Status (7)

Country Link
US (1) US20120193643A1 (enExample)
EP (1) EP2672516A4 (enExample)
JP (1) JP2012160584A (enExample)
KR (1) KR20140001947A (enExample)
CN (1) CN103843141A (enExample)
TW (1) TW201234592A (enExample)
WO (1) WO2012105088A1 (enExample)

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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9447767B2 (en) * 2012-07-03 2016-09-20 Fuji Electric Co., Ltd. Single chip igniter and internal combustion engine ignition device
US9142668B2 (en) 2013-03-13 2015-09-22 Cree, Inc. Field effect transistor devices with buried well protection regions
US9306061B2 (en) 2013-03-13 2016-04-05 Cree, Inc. Field effect transistor devices with protective regions
US9240476B2 (en) 2013-03-13 2016-01-19 Cree, Inc. Field effect transistor devices with buried well regions and epitaxial layers
US9012984B2 (en) 2013-03-13 2015-04-21 Cree, Inc. Field effect transistor devices with regrown p-layers
JP2015053462A (ja) * 2013-08-06 2015-03-19 住友電気工業株式会社 炭化珪素半導体装置およびその製造方法
JP6256148B2 (ja) * 2014-03-27 2018-01-10 住友電気工業株式会社 炭化珪素半導体装置およびその製造方法
JP6481511B2 (ja) * 2014-07-24 2019-03-13 住友電気工業株式会社 炭化珪素半導体装置
JP2016029707A (ja) * 2014-07-24 2016-03-03 住友電気工業株式会社 炭化珪素半導体装置
JP6115678B1 (ja) 2016-02-01 2017-04-19 富士電機株式会社 炭化珪素半導体装置および炭化珪素半導体装置の製造方法
DE102016226237B4 (de) * 2016-02-01 2024-07-18 Fuji Electric Co., Ltd. Siliziumcarbid-halbleitervorrichtung
US11063122B2 (en) * 2016-11-01 2021-07-13 Mitsubishi Electric Corporation Silicon carbide semiconductor device and power conversion device
JP7155634B2 (ja) * 2018-06-12 2022-10-19 富士電機株式会社 炭化珪素半導体装置および炭化珪素半導体装置の製造方法
US10957791B2 (en) * 2019-03-08 2021-03-23 Infineon Technologies Americas Corp. Power device with low gate charge and low figure of merit
US11658214B2 (en) * 2021-01-12 2023-05-23 Semiconductor Components Industries, Llc MOSFET device with undulating channel
IT202100001895A1 (it) 2021-01-29 2022-07-29 St Microelectronics Srl Dispositivo mosfet a conduzione verticale in carburo di silicio per applicazioni di potenza e relativo processo di fabbricazione
IT202100001934A1 (it) * 2021-01-29 2022-07-29 St Microelectronics Srl Dispositivo mosfet a conduzione verticale in carburo di silicio e relativo processo di fabbricazione

Family Cites Families (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3428459B2 (ja) * 1998-09-01 2003-07-22 富士電機株式会社 炭化けい素ｎチャネルＭＯＳ半導体素子およびその製造方法
JP4371521B2 (ja) * 2000-03-06 2009-11-25 株式会社東芝 電力用半導体素子およびその製造方法
US7217950B2 (en) * 2002-10-11 2007-05-15 Nissan Motor Co., Ltd. Insulated gate tunnel-injection device having heterojunction and method for manufacturing the same
CN100382246C (zh) * 2003-04-25 2008-04-16 住友电气工业株式会社 半导体装置的制造方法
JP4620368B2 (ja) * 2004-03-08 2011-01-26 三菱電機株式会社 半導体装置の製造方法
JP4889645B2 (ja) * 2005-09-08 2012-03-07 三菱電機株式会社 半導体装置の製造方法
WO2007046254A1 (ja) * 2005-10-19 2007-04-26 Mitsubishi Electric Corporation Ｍｏｓｆｅｔおよびｍｏｓｆｅｔの製造方法
JP4627272B2 (ja) * 2006-03-09 2011-02-09 三菱電機株式会社 炭化珪素半導体装置および炭化珪素半導体装置の製造方法
JP5119806B2 (ja) * 2007-08-27 2013-01-16 三菱電機株式会社 炭化珪素半導体装置およびその製造方法
WO2009142233A1 (ja) * 2008-05-20 2009-11-26 ローム株式会社 半導体装置
US8536582B2 (en) * 2008-12-01 2013-09-17 Cree, Inc. Stable power devices on low-angle off-cut silicon carbide crystals
JP5564890B2 (ja) * 2008-12-16 2014-08-06 住友電気工業株式会社 接合型電界効果トランジスタおよびその製造方法
IT1392577B1 (it) * 2008-12-30 2012-03-09 St Microelectronics Rousset Processo di fabbricazione di un dispositivo elettronico di potenza integrato in un substrato semiconduttore ad ampio intervallo di banda proibita e dispositivo elettronico cosi' ottenuto
US8653535B2 (en) * 2010-09-06 2014-02-18 Panasonic Corporation Silicon carbide semiconductor device having a contact region that includes a first region and a second region, and process for production thereof
KR20130141338A (ko) * 2010-12-22 2013-12-26 스미토모덴키고교가부시키가이샤 탄화규소 반도체 장치의 제조 방법
JP5777455B2 (ja) * 2011-09-08 2015-09-09 株式会社東芝 半導体装置および半導体装置の製造方法

Also Published As

Publication number Publication date
TW201234592A (en) 2012-08-16
EP2672516A4 (en) 2014-08-06
JP2012160584A (ja) 2012-08-23
WO2012105088A1 (ja) 2012-08-09
EP2672516A1 (en) 2013-12-11
US20120193643A1 (en) 2012-08-02
CN103843141A (zh) 2014-06-04

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