JP2014139967A5 - - Google Patents
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- Publication number
- JP2014139967A5 JP2014139967A5 JP2013008104A JP2013008104A JP2014139967A5 JP 2014139967 A5 JP2014139967 A5 JP 2014139967A5 JP 2013008104 A JP2013008104 A JP 2013008104A JP 2013008104 A JP2013008104 A JP 2013008104A JP 2014139967 A5 JP2014139967 A5 JP 2014139967A5
- Authority
- JP
- Japan
- Prior art keywords
- region
- silicon carbide
- main surface
- range
- conductivity type
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
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- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 claims description 31
- 229910010271 silicon carbide Inorganic materials 0.000 claims description 31
- 239000004065 semiconductor Substances 0.000 claims description 25
- 230000015556 catabolic process Effects 0.000 claims description 24
- 230000015572 biosynthetic process Effects 0.000 claims description 16
- 230000005684 electric field Effects 0.000 claims description 9
- 239000012535 impurity Substances 0.000 claims description 7
- 238000004519 manufacturing process Methods 0.000 claims description 5
- 238000000034 method Methods 0.000 claims description 5
- 239000002131 composite material Substances 0.000 claims 1
- 239000000758 substrate Substances 0.000 claims 1
Priority Applications (5)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2013008104A JP6064614B2 (ja) | 2013-01-21 | 2013-01-21 | 炭化珪素半導体装置およびその製造方法 |
| CN201380067281.6A CN104885226A (zh) | 2013-01-21 | 2013-12-04 | 碳化硅半导体器件及其制造方法 |
| DE112013006470.7T DE112013006470T5 (de) | 2013-01-21 | 2013-12-04 | Siliziumkarbid-Halbleitervorrichtung und Verfahren zur Herstellung selbiger |
| US14/651,985 US9276106B2 (en) | 2013-01-21 | 2013-12-04 | Silicon carbide semiconductor device and method for manufacturing same |
| PCT/JP2013/082560 WO2014112233A1 (ja) | 2013-01-21 | 2013-12-04 | 炭化珪素半導体装置およびその製造方法 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2013008104A JP6064614B2 (ja) | 2013-01-21 | 2013-01-21 | 炭化珪素半導体装置およびその製造方法 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2014139967A JP2014139967A (ja) | 2014-07-31 |
| JP2014139967A5 true JP2014139967A5 (enExample) | 2016-03-10 |
| JP6064614B2 JP6064614B2 (ja) | 2017-01-25 |
Family
ID=51209343
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2013008104A Active JP6064614B2 (ja) | 2013-01-21 | 2013-01-21 | 炭化珪素半導体装置およびその製造方法 |
Country Status (5)
| Country | Link |
|---|---|
| US (1) | US9276106B2 (enExample) |
| JP (1) | JP6064614B2 (enExample) |
| CN (1) | CN104885226A (enExample) |
| DE (1) | DE112013006470T5 (enExample) |
| WO (1) | WO2014112233A1 (enExample) |
Families Citing this family (16)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP6728953B2 (ja) * | 2015-07-16 | 2020-07-22 | 富士電機株式会社 | 半導体装置及びその製造方法 |
| DE102016113129B3 (de) | 2016-07-15 | 2017-11-09 | Infineon Technologies Ag | Halbleitervorrichtung, die eine Superjunction-Struktur in einem SiC-Halbleiterkörper enthält |
| US10861931B2 (en) | 2016-12-08 | 2020-12-08 | Cree, Inc. | Power semiconductor devices having gate trenches and buried edge terminations and related methods |
| WO2019008884A1 (ja) | 2017-07-04 | 2019-01-10 | 住友電気工業株式会社 | 炭化珪素半導体装置 |
| KR102238755B1 (ko) * | 2017-07-07 | 2021-04-12 | 한국전자통신연구원 | 전력 반도체 소자의 제조 방법 |
| JP7039937B2 (ja) * | 2017-11-07 | 2022-03-23 | 富士電機株式会社 | 半導体装置 |
| WO2020012812A1 (ja) | 2018-07-11 | 2020-01-16 | 住友電気工業株式会社 | 炭化珪素半導体装置 |
| JP6648331B1 (ja) | 2019-06-07 | 2020-02-14 | 新電元工業株式会社 | 半導体装置及び半導体装置の製造方法 |
| US11450734B2 (en) | 2019-06-17 | 2022-09-20 | Fuji Electric Co., Ltd. | Semiconductor device and fabrication method for semiconductor device |
| JP7107284B2 (ja) * | 2019-07-08 | 2022-07-27 | 株式会社デンソー | 半導体装置とその製造方法 |
| CN115088080B (zh) * | 2019-12-03 | 2025-09-05 | 株式会社电装 | 半导体装置 |
| CN113140612B (zh) * | 2020-01-17 | 2025-03-14 | 珠海零边界集成电路有限公司 | 一种碳化硅功率器件终端结构及其制备方法 |
| JP2022139144A (ja) * | 2021-03-11 | 2022-09-26 | 株式会社デンソー | 半導体装置 |
| JP7593225B2 (ja) * | 2021-05-14 | 2024-12-03 | 株式会社デンソー | 炭化珪素半導体装置 |
| TWI806414B (zh) | 2022-02-09 | 2023-06-21 | 鴻海精密工業股份有限公司 | 功率半導體元件 |
| CN114464668A (zh) * | 2022-02-09 | 2022-05-10 | 鸿海精密工业股份有限公司 | 功率半导体元件 |
Family Cites Families (11)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP3158973B2 (ja) * | 1995-07-20 | 2001-04-23 | 富士電機株式会社 | 炭化けい素縦型ｆｅｔ |
| US6037632A (en) | 1995-11-06 | 2000-03-14 | Kabushiki Kaisha Toshiba | Semiconductor device |
| JP3392665B2 (ja) * | 1995-11-06 | 2003-03-31 | 株式会社東芝 | 半導体装置 |
| US6057558A (en) * | 1997-03-05 | 2000-05-02 | Denson Corporation | Silicon carbide semiconductor device and manufacturing method thereof |
| SE9704149D0 (sv) * | 1997-11-13 | 1997-11-13 | Abb Research Ltd | A semiconductor device of SiC and a transistor of SiC having an insulated gate |
| JPH11251592A (ja) * | 1998-01-05 | 1999-09-17 | Denso Corp | 炭化珪素半導体装置 |
| DE19843659A1 (de) * | 1998-09-23 | 2000-04-06 | Siemens Ag | Halbleiterbauelement mit strukturiertem Halbleiterkörper |
| JP3506676B2 (ja) * | 2001-01-25 | 2004-03-15 | Ｎｅｃエレクトロニクス株式会社 | 半導体装置 |
| JP2005079339A (ja) * | 2003-08-29 | 2005-03-24 | National Institute Of Advanced Industrial & Technology | 半導体装置、およびその半導体装置を用いた電力変換器、駆動用インバータ、汎用インバータ、大電力高周波通信機器 |
| JP2009088345A (ja) * | 2007-10-01 | 2009-04-23 | Toshiba Corp | 半導体装置 |
| JP5879770B2 (ja) * | 2011-06-27 | 2016-03-08 | 住友電気工業株式会社 | 半導体装置およびその製造方法 |
-
2013
- 2013-01-21 JP JP2013008104A patent/JP6064614B2/ja active Active
- 2013-12-04 DE DE112013006470.7T patent/DE112013006470T5/de active Pending
- 2013-12-04 WO PCT/JP2013/082560 patent/WO2014112233A1/ja not_active Ceased
- 2013-12-04 US US14/651,985 patent/US9276106B2/en active Active
- 2013-12-04 CN CN201380067281.6A patent/CN104885226A/zh active Pending
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