JP6077385B2 - 半導体装置 - Google Patents
半導体装置 Download PDFInfo
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- JP6077385B2 JP6077385B2 JP2013104838A JP2013104838A JP6077385B2 JP 6077385 B2 JP6077385 B2 JP 6077385B2 JP 2013104838 A JP2013104838 A JP 2013104838A JP 2013104838 A JP2013104838 A JP 2013104838A JP 6077385 B2 JP6077385 B2 JP 6077385B2
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- 239000004065 semiconductor Substances 0.000 title claims description 49
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 claims description 65
- 229910010271 silicon carbide Inorganic materials 0.000 claims description 65
- 239000000758 substrate Substances 0.000 claims description 50
- 239000012535 impurity Substances 0.000 claims description 31
- 230000007547 defect Effects 0.000 description 18
- 230000015556 catabolic process Effects 0.000 description 9
- 230000005684 electric field Effects 0.000 description 6
- 238000005468 ion implantation Methods 0.000 description 4
- 102000004129 N-Type Calcium Channels Human genes 0.000 description 2
- 108090000699 N-Type Calcium Channels Proteins 0.000 description 2
- 239000012141 concentrate Substances 0.000 description 2
- 238000000034 method Methods 0.000 description 2
- 230000007704 transition Effects 0.000 description 2
- 150000002500 ions Chemical class 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 230000035515 penetration Effects 0.000 description 1
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- H—ELECTRICITY
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/7801—DMOS transistors, i.e. MISFETs with a channel accommodating body or base region adjoining a drain drift region
- H01L29/7802—Vertical DMOS transistors, i.e. VDMOS transistors
- H01L29/7813—Vertical DMOS transistors, i.e. VDMOS transistors with trench gate electrode, e.g. UMOS transistors
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/0603—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions
- H01L29/0607—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration
- H01L29/0611—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse biased devices
- H01L29/0615—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse biased devices by the doping profile or the shape or the arrangement of the PN junction, or with supplementary regions, e.g. junction termination extension [JTE]
- H01L29/0619—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse biased devices by the doping profile or the shape or the arrangement of the PN junction, or with supplementary regions, e.g. junction termination extension [JTE] with a supplementary region doped oppositely to or in rectifying contact with the semiconductor containing or contacting region, e.g. guard rings with PN or Schottky junction
- H01L29/0623—Buried supplementary region, e.g. buried guard ring
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/08—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
- H01L29/0843—Source or drain regions of field-effect devices
- H01L29/0847—Source or drain regions of field-effect devices of field-effect transistors with insulated gate
- H01L29/0852—Source or drain regions of field-effect devices of field-effect transistors with insulated gate of DMOS transistors
- H01L29/0873—Drain regions
- H01L29/0878—Impurity concentration or distribution
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/10—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode not carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
- H01L29/1095—Body region, i.e. base region, of DMOS transistors or IGBTs
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/16—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only elements of Group IV of the Periodic Table
- H01L29/1608—Silicon carbide
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- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Electrodes Of Semiconductors (AREA)
- Junction Field-Effect Transistors (AREA)
Description
4 炭化珪素基板
6 表面電極
8 裏面電極
10 ドレイン層
12 ドリフト層
14 埋込層
16,16a,16b 第1エピタキシャル層
18,18a,18b 第2エピタキシャル層
20 ベース層
21 第3エピタキシャル層
22 ゲート電極
24 ソース層
26 コンタクト層
28 トレンチ
30 ゲート絶縁膜
32 表面絶縁膜
42 半導体装置
52 半導体装置
62 半導体装置
Claims (4)
- 表面に表面電極が設けられており、裏面に裏面電極が設けられた炭化珪素基板に形成された半導体装置であって、
裏面電極と導通している第1導電型のドレイン層と、
ドレイン層に対して炭化珪素基板の表面側に設けられており、ドレイン層よりも不純物濃度が低い第1導電型のドリフト層と、
ドリフト層に対して炭化珪素基板の表面側に設けられており、表面電極と導通している第2導電型のベース層と、
炭化珪素基板の表面からドリフト層まで達するトレンチの内部に配置されており、絶縁膜によって炭化珪素基板と表面電極から絶縁されたゲート電極と、
ベース層と表面電極の間に設けられており、ゲート電極の絶縁膜と表面電極に接している第1導電型のソース層と、
ドリフト層とベース層の間に設けられており、炭化珪素基板の表面からのドリフト層側の端部の深さが、炭化珪素基板の表面からのトレンチの先端の深さよりも深くなるように形成された、第2導電型の埋込層と、
埋込層とベース層の間に設けられており、埋込層よりも不純物濃度の高い第1エピタキシャル層を備えており、
埋込層とベース層が、第1エピタキシャル層によって分離されている半導体装置。 - 表面に表面電極が設けられており、裏面に裏面電極が設けられた炭化珪素基板に形成された半導体装置であって、
裏面電極と導通している第1導電型のドレイン層と、
ドレイン層に対して炭化珪素基板の表面側に設けられており、ドレイン層よりも不純物濃度が低い第1導電型のドリフト層と、
ドリフト層に対して炭化珪素基板の表面側に設けられており、表面電極と導通している第2導電型のベース層と、
炭化珪素基板の表面からドリフト層まで達するトレンチの内部に配置されており、絶縁膜によって炭化珪素基板と表面電極から絶縁されたゲート電極と、
ベース層と表面電極の間に設けられており、ゲート電極の絶縁膜と表面電極に接している第1導電型のソース層と、
ドリフト層とベース層の間に設けられており、炭化珪素基板の表面からのドリフト層側の端部の深さが、炭化珪素基板の表面からのトレンチの先端の深さよりも深くなるように形成された、第2導電型の埋込層と、
埋込層とベース層の間に設けられており、埋込層よりも不純物濃度の高い第1エピタキシャル層と、
第1エピタキシャル層とベース層の間に設けられており、第1エピタキシャル層よりも不純物濃度が低い第2エピタキシャル層を備える半導体装置。 - 第1エピタキシャル層と第2エピタキシャル層の導電型が第1導電型であって、
第2エピタキシャル層がベース層に接しており、
第1エピタキシャル層と第2エピタキシャル層の不純物濃度の平均がドリフト層の不純物濃度よりも低い請求項2の半導体装置。 - 第1エピタキシャル層と第2エピタキシャル層の導電型が第2導電型であって、
第2エピタキシャル層とベース層の間に設けられており、ベース層とは異なる導電型を有する第3エピタキシャル層をさらに備える請求項2の半導体装置。
Priority Applications (2)
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JP2013104838A JP6077385B2 (ja) | 2013-05-17 | 2013-05-17 | 半導体装置 |
US14/262,121 US9614071B2 (en) | 2013-05-17 | 2014-04-25 | Semiconductor device |
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JP2013104838A JP6077385B2 (ja) | 2013-05-17 | 2013-05-17 | 半導体装置 |
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JP2014225599A JP2014225599A (ja) | 2014-12-04 |
JP6077385B2 true JP6077385B2 (ja) | 2017-02-08 |
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JP2013104838A Expired - Fee Related JP6077385B2 (ja) | 2013-05-17 | 2013-05-17 | 半導体装置 |
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Cited By (1)
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US10559701B2 (en) | 2018-04-27 | 2020-02-11 | Hyundai Motor Company | Semiconductor device and method of manufacturing the same |
Families Citing this family (10)
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JP2014241368A (ja) * | 2013-06-12 | 2014-12-25 | 住友電気工業株式会社 | 炭化珪素半導体装置 |
US20150118810A1 (en) * | 2013-10-24 | 2015-04-30 | Madhur Bobde | Buried field ring field effect transistor (buf-fet) integrated with cells implanted with hole supply path |
JP6213522B2 (ja) * | 2015-06-03 | 2017-10-18 | トヨタ自動車株式会社 | 半導体装置 |
DE102016226237A1 (de) * | 2016-02-01 | 2017-08-03 | Fuji Electric Co., Ltd. | Siliziumcarbid-halbleitervorrichtung und verfahren zum herstellen einer siliziumcarbid-halbleitervorrichtung |
JP6472776B2 (ja) * | 2016-02-01 | 2019-02-20 | 富士電機株式会社 | 炭化珪素半導体装置および炭化珪素半導体装置の製造方法 |
CN108604594B (zh) | 2016-08-12 | 2021-10-08 | 富士电机株式会社 | 半导体装置及半导体装置的制造方法 |
JP6871058B2 (ja) * | 2017-05-22 | 2021-05-12 | 株式会社東芝 | 半導体装置、インバータ回路、駆動装置、車両、及び、昇降機 |
JP6918736B2 (ja) * | 2018-04-02 | 2021-08-11 | 株式会社豊田中央研究所 | 半導体装置 |
JP7275573B2 (ja) * | 2018-12-27 | 2023-05-18 | 富士電機株式会社 | 炭化珪素半導体装置および炭化珪素半導体装置の製造方法 |
CN115188823B (zh) * | 2022-09-14 | 2023-01-24 | 华羿微电子股份有限公司 | 一种强鲁棒性沟槽mosfet器件及制备方法 |
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JP4371521B2 (ja) * | 2000-03-06 | 2009-11-25 | 株式会社東芝 | 電力用半導体素子およびその製造方法 |
JP3811624B2 (ja) | 2001-04-27 | 2006-08-23 | 松下電器産業株式会社 | 半導体装置 |
JP3973395B2 (ja) * | 2001-10-16 | 2007-09-12 | 株式会社豊田中央研究所 | 半導体装置とその製造方法 |
JP5017865B2 (ja) * | 2006-01-17 | 2012-09-05 | 富士電機株式会社 | 半導体装置 |
JP4798119B2 (ja) * | 2007-11-06 | 2011-10-19 | 株式会社デンソー | 炭化珪素半導体装置およびその製造方法 |
JP4793390B2 (ja) | 2008-02-13 | 2011-10-12 | 株式会社デンソー | 炭化珪素半導体装置およびその製造方法 |
US8415671B2 (en) * | 2010-04-16 | 2013-04-09 | Cree, Inc. | Wide band-gap MOSFETs having a heterojunction under gate trenches thereof and related methods of forming such devices |
JP5531787B2 (ja) * | 2010-05-31 | 2014-06-25 | 株式会社デンソー | 炭化珪素半導体装置およびその製造方法 |
JP2012169385A (ja) * | 2011-02-11 | 2012-09-06 | Denso Corp | 炭化珪素半導体装置 |
JP5869291B2 (ja) * | 2011-10-14 | 2016-02-24 | 富士電機株式会社 | 半導体装置 |
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- 2013-05-17 JP JP2013104838A patent/JP6077385B2/ja not_active Expired - Fee Related
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Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
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US10559701B2 (en) | 2018-04-27 | 2020-02-11 | Hyundai Motor Company | Semiconductor device and method of manufacturing the same |
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US9614071B2 (en) | 2017-04-04 |
US20140339569A1 (en) | 2014-11-20 |
JP2014225599A (ja) | 2014-12-04 |
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