JP7275573B2 - 炭化珪素半導体装置および炭化珪素半導体装置の製造方法 - Google Patents
炭化珪素半導体装置および炭化珪素半導体装置の製造方法 Download PDFInfo
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- JP7275573B2 JP7275573B2 JP2018244471A JP2018244471A JP7275573B2 JP 7275573 B2 JP7275573 B2 JP 7275573B2 JP 2018244471 A JP2018244471 A JP 2018244471A JP 2018244471 A JP2018244471 A JP 2018244471A JP 7275573 B2 JP7275573 B2 JP 7275573B2
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Description
実施の形態1にかかる炭化珪素半導体装置の構造について説明する。図1は、実施の形態1にかかる炭化珪素半導体装置の構造を示す断面図である。図1には、炭化珪素を半導体材料として用いた縦型MOSFETの隣接する2つの単位セル(素子の構成単位)を示す。また、図1には、活性領域に配置された一部の単位セルのみを図示し、活性領域の周囲を囲むエッジ終端領域を図示省略する(図5~10においても同様)。活性領域とは、半導体装置がオン状態のときに電流が流れる領域である。
次に、実施の形態2にかかる炭化珪素半導体装置の製造方法について、図4~6,8~10を参照して説明する。図9,10は、実施の形態2にかかる炭化珪素半導体装置の製造途中の状態を示す断面図である。実施の形態2にかかる炭化珪素半導体装置の製造方法は、実施の形態1にかかる炭化珪素半導体装置10の製造方法を適用して、p型高濃度領域2bの第1部分2cのトレンチ6の側壁からの離間距離Tch(図1参照)をより短くした炭化珪素半導体装置の製造方法である。
次に、炭化珪素エピタキシャル層にイオン注入されたp型不純物の横方向拡散について検証した。図11は、炭化珪素エピタキシャル層にイオン注入された不純物分布を模式的に示す特性図である。図11は、炭化珪素エピタキシャル層51の表面(イオン注入面)の所定点(1点)52からイオン注入されたp型不純物の拡がりをシミュレーションした結果である。図11には、p型不純物が多く存在する範囲53をハッチングで示し、当該範囲53から外れた位置まで拡がったp型不純物を図示省略する。なお、p型不純物の拡がりは走査型静電容量顕微鏡や、走査型非線形誘電率顕微鏡、走査型マイクロ波顕微鏡などにより推定可能である。
次に、p型高濃度領域2bの第1部分2cのピーク濃度と、p型高濃度領域2bの第1部分2cのトレンチ6の側壁からの離間距離Tchと、の関係について検証した。図12は、実施例2のp型高濃度領域の第1部分のピーク濃度と離間距離との関係を示す特性図である。図12の横軸はp型高濃度領域の第1部分のピーク濃度であり、縦軸は上述した実施の形態1にかかる炭化珪素半導体装置10のゲート閾値電圧Vthである。炭化珪素半導体装置10に印加するドレイン-ソース間電圧を20Vとした。
2 p型ベース領域
2a p-型チャネル領域
2b p型高濃度領域
2c~2e p型高濃度領域の第1~3部分
3 n型電流拡散領域
4 n++型ソース領域
5 p++型コンタクト領域
6 トレンチ
7 ゲート絶縁膜
8 ゲート電極
9 層間絶縁膜
9a コンタクトホール
10 炭化珪素半導体装置
11 シリサイド層
12 ソース電極
13,14 n型バッファ領域
15 n+型ドレイン領域
16 ドレイン電極
21 トレンチ底面のp+型領域(第1p+型領域)
22 メサ領域のp+型領域(第2p+型領域)
22a,22b p+型領域
23 n型領域
30 半導体基板
31 n+型出発基板
32~35,51 炭化珪素エピタキシャル層
41 イオン注入用マスク
41a,41a' イオン注入用マスクの開口部
42~44 イオン注入
52 炭化珪素エピタキシャル層にイオン注入する所定点
d1 n++型ソース領域の深さ
d2 p++型コンタクト領域の深さ
d3 半導体基板のおもて面から、p型ベース領域とn型電流拡散領域との界面までの深さ
d4 p型高濃度領域の第1部分のピーク濃度の、半導体基板のおもて面からの深さ位置
L チャネル長
Tch p型高濃度領域の第1部分の、トレンチからの距離(離間距離)
w1 p++型コンタクト領域の幅
w2 p型高濃度領域の幅
w11,w12 イオン注入用マスクの開口部の幅
x2a,x2b イオン注入用マスクの開口部の端部からp型不純物が横方向拡散する長さ
Claims (12)
- 炭化珪素からなる半導体基板と、
前記半導体基板のおもて面に設けられた第1導電型の第1半導体層と、
前記第1半導体層よりも前記半導体基板のおもて面側に設けられ、前記半導体基板のおもて面を形成する第2半導体層と、
前記第2半導体層の表面に選択的に設けられた第1導電型の第1半導体領域と、
前記第2半導体層の表面に選択的に設けられた第2導電型の第2半導体領域と、
前記第2半導体層の、前記第1半導体領域および前記第2半導体領域を除く部分であり、前記第2半導体領域よりも不純物濃度の低い第2導電型の第3半導体領域と、
前記第3半導体領域の一部であり、深さ方向に前記第2半導体領域に対向する第2導電型の高濃度領域と、
前記第3半導体領域の、前記高濃度領域を除く部分であり、前記半導体基板のおもて面に平行な方向に前記高濃度領域に対向し、かつ深さ方向に前記第1半導体領域および前記第1半導体層に対向する第2導電型の低濃度領域と、
前記半導体基板のおもて面から前記第1半導体領域および前記低濃度領域を貫通して前記第1半導体層に達するトレンチと、
前記トレンチの内部にゲート絶縁膜を介して設けられたゲート電極と、
前記第1半導体領域および前記第2半導体領域に電気的に接続された第1電極と、
前記半導体基板の裏面に設けられた第2電極と、
を備え、
前記高濃度領域の不純物濃度は、前記半導体基板のおもて面に平行な方向に前記低濃度領域に近づくにしたがって低くなっており、
前記高濃度領域の不純物濃度は、不純物濃度が最大となる深さ位置から前記半導体基板のおもて面側および裏面側にそれぞれ向かうにしたがって低くなっており、
前記高濃度領域の不純物濃度が最大となる深さ位置は、深さ方向に前記第1半導体領域から離れていることを特徴とする炭化珪素半導体装置。 - 前記高濃度領域の幅は、前記第2半導体領域の幅よりも広いことを特徴とする請求項1に記載の炭化珪素半導体装置。
- 前記高濃度領域は、深さ方向に前記第1半導体領域および前記第2半導体領域に対向することを特徴とする請求項1または2に記載の炭化珪素半導体装置。
- 前記高濃度領域から前記トレンチまでの距離は、0.04μm以上0.2μm以下であることを特徴とする請求項1~3のいずれか一つに記載の炭化珪素半導体装置。
- 前記高濃度領域から前記トレンチまでの距離は、0.06μm以上0.1μm以下であることを特徴とする請求項4に記載の炭化珪素半導体装置。
- 炭化珪素からなる第1導電型の出発基板の表面に、前記出発基板よりも不純物濃度の低い炭化珪素からなる第1導電型の第1半導体層を堆積する第1工程と、
前記第1半導体層の表面に炭化珪素からなる第2導電型の第2半導体層を形成し、裏面を前記出発基板とし、おもて面を前記第2半導体層とする半導体基板を形成する第2工程と、
前記第2半導体層の表面に、第1導電型の第1半導体領域を選択的に形成する第3工程と、
前記第2半導体層の表面に、所定箇所に開口部を有するイオン注入用マスクを形成する第4工程と、
前記イオン注入用マスクを用いて第2導電型不純物を第1イオン注入することで、前記第2半導体層の表面に、前記第2半導体層よりも不純物濃度の高い第2導電型の第2半導体領域を形成する第5工程と、
前記イオン注入用マスクを用いて、前記第1イオン注入よりも高い加速エネルギーで第2導電型不純物を第2イオン注入することで、前記第2半導体層の内部において、前記第2半導体領域よりも前記半導体基板の裏面側に、前記第2半導体層よりも不純物濃度が高く、前記第2半導体領域よりも不純物濃度が低い第2導電型の高濃度領域を形成し、
かつ、前記第2半導体層の、前記第1半導体領域、前記第2半導体領域および前記高濃度領域を除く部分を、前記半導体基板のおもて面に平行な方向に前記高濃度領域に対向する第2導電型の低濃度領域として残して、前記高濃度領域および前記低濃度領域からなる第2導電型の第3半導体領域を形成する第6工程と、
前記半導体基板のおもて面から前記第1半導体領域および前記低濃度領域を貫通して前記第1半導体層に達するトレンチを形成する第7工程と、
前記トレンチの内部にゲート絶縁膜を介してゲート電極を形成する第8工程と、
前記第1半導体領域および前記第2半導体領域に電気的に接続された第1電極を形成する第9工程と、
前記半導体基板の裏面に第2電極を形成する第10工程と、
を含み、
前記第6工程では、前記第2イオン注入の飛程を、前記第1半導体領域よりも深い位置に設定することを特徴とする炭化珪素半導体装置の製造方法。 - 炭化珪素からなる第1導電型の出発基板の表面に、前記出発基板よりも不純物濃度の低い炭化珪素からなる第1導電型の第1半導体層を堆積する第1工程と、
前記第1半導体層の表面に炭化珪素からなる第2導電型の第2半導体層を形成し、裏面を前記出発基板とし、おもて面を前記第2半導体層とする半導体基板を形成する第2工程と、
前記第2半導体層の表面に、第1導電型の第1半導体領域を選択的に形成する第3工程と、
前記第2半導体層の表面に、所定箇所に開口部を有するイオン注入用マスクを形成する第4工程と、
前記イオン注入用マスクを用いて第2導電型不純物を第1イオン注入することで、前記第2半導体層の表面に、前記第2半導体層よりも不純物濃度の高い第2導電型の第2半導体領域を形成する第5工程と、
前記イオン注入用マスクを用いて、前記第1イオン注入よりも高い加速エネルギーで第2導電型不純物を第2イオン注入することで、前記第2半導体層の内部において、前記第2半導体領域よりも前記半導体基板の裏面側に、前記第2半導体層よりも不純物濃度が高く、前記第2半導体領域よりも不純物濃度が低い第2導電型の高濃度領域を形成し、
かつ、前記第2半導体層の、前記第1半導体領域、前記第2半導体領域および前記高濃度領域を除く部分を、前記半導体基板のおもて面に平行な方向に前記高濃度領域に対向する第2導電型の低濃度領域として残して、前記高濃度領域および前記低濃度領域からなる第2導電型の第3半導体領域を形成する第6工程と、
前記半導体基板のおもて面から前記第1半導体領域および前記低濃度領域を貫通して前記第1半導体層に達するトレンチを形成する第7工程と、
前記トレンチの内部にゲート絶縁膜を介してゲート電極を形成する第8工程と、
前記第1半導体領域および前記第2半導体領域に電気的に接続された第1電極を形成する第9工程と、
前記半導体基板の裏面に第2電極を形成する第10工程と、
を含み、
前記第5工程の後、前記第6工程の前に、前記イオン注入用マスクの開口部の幅を広げる第11工程をさらに含むことを特徴とする炭化珪素半導体装置の製造方法。 - 前記第5工程および前記第6工程を連続して行うことを特徴とする請求項6または7に記載の炭化珪素半導体装置の製造方法。
- 前記第6工程では、前記高濃度領域から前記トレンチまでの距離を、0.04μm以上0.2μm以下にすることを特徴とする請求項6~8のいずれか一つに記載の炭化珪素半導体装置の製造方法。
- 前記高濃度領域から前記トレンチまでの距離は、0.06μm以上0.1μm以下であることを特徴とする請求項9に記載の炭化珪素半導体装置の製造方法。
- 前記第6工程では、前記第2イオン注入された第2導電型不純物が前記半導体基板のおもて面に平行な方向に拡散され、前記高濃度領域の不純物濃度が前記半導体基板のおもて面に平行な方向に前記低濃度領域に近づくにしたがって低くなることを特徴とする請求項6~10のいずれか一つに記載の炭化珪素半導体装置の製造方法。
- 前記第6工程では、前記第2イオン注入された第2導電型不純物が前記半導体基板のおもて面に平行な方向に拡散され、前記高濃度領域の幅が前記イオン注入用マスクの開口部の幅よりも広くなることを特徴とする請求項6~11のいずれか一つに記載の炭化珪素半導体装置の製造方法。
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