JP6617657B2 - 炭化ケイ素半導体装置および炭化ケイ素半導体装置の製造方法 - Google Patents
炭化ケイ素半導体装置および炭化ケイ素半導体装置の製造方法 Download PDFInfo
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- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 title claims description 300
- 229910010271 silicon carbide Inorganic materials 0.000 title claims description 298
- 239000004065 semiconductor Substances 0.000 title claims description 102
- 238000004519 manufacturing process Methods 0.000 title claims description 83
- 238000000034 method Methods 0.000 title claims description 39
- 239000010410 layer Substances 0.000 claims description 330
- 239000012535 impurity Substances 0.000 claims description 233
- 239000000758 substrate Substances 0.000 claims description 71
- 239000011229 interlayer Substances 0.000 claims description 12
- 229920002120 photoresistant polymer Polymers 0.000 claims description 9
- 230000000149 penetrating effect Effects 0.000 claims description 2
- 230000015556 catabolic process Effects 0.000 description 23
- 229910052751 metal Inorganic materials 0.000 description 19
- 239000002184 metal Substances 0.000 description 19
- 230000015572 biosynthetic process Effects 0.000 description 17
- 238000005468 ion implantation Methods 0.000 description 16
- 230000004888 barrier function Effects 0.000 description 12
- 238000004518 low pressure chemical vapour deposition Methods 0.000 description 8
- 230000005684 electric field Effects 0.000 description 7
- 238000005530 etching Methods 0.000 description 7
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 7
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 6
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 5
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 5
- 230000006378 damage Effects 0.000 description 5
- 229920005591 polysilicon Polymers 0.000 description 5
- 229910052710 silicon Inorganic materials 0.000 description 5
- 239000010703 silicon Substances 0.000 description 5
- 239000000969 carrier Substances 0.000 description 4
- 238000000151 deposition Methods 0.000 description 4
- 238000001259 photo etching Methods 0.000 description 4
- 239000010936 titanium Substances 0.000 description 4
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 3
- NRTOMJZYCJJWKI-UHFFFAOYSA-N Titanium nitride Chemical compound [Ti]#N NRTOMJZYCJJWKI-UHFFFAOYSA-N 0.000 description 3
- 238000010438 heat treatment Methods 0.000 description 3
- 239000000463 material Substances 0.000 description 3
- 229910052757 nitrogen Inorganic materials 0.000 description 3
- 230000008569 process Effects 0.000 description 3
- 238000004544 sputter deposition Methods 0.000 description 3
- 229910052719 titanium Inorganic materials 0.000 description 3
- 229910052782 aluminium Inorganic materials 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- 239000010949 copper Substances 0.000 description 2
- 238000009792 diffusion process Methods 0.000 description 2
- 230000005669 field effect Effects 0.000 description 2
- 229910052759 nickel Inorganic materials 0.000 description 2
- XHXFXVLFKHQFAL-UHFFFAOYSA-N phosphoryl trichloride Chemical compound ClP(Cl)(Cl)=O XHXFXVLFKHQFAL-UHFFFAOYSA-N 0.000 description 2
- 230000007480 spreading Effects 0.000 description 2
- 238000003892 spreading Methods 0.000 description 2
- 229910018125 Al-Si Inorganic materials 0.000 description 1
- 229910018182 Al—Cu Inorganic materials 0.000 description 1
- 229910018520 Al—Si Inorganic materials 0.000 description 1
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 1
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
- CSDREXVUYHZDNP-UHFFFAOYSA-N alumanylidynesilicon Chemical compound [Al].[Si] CSDREXVUYHZDNP-UHFFFAOYSA-N 0.000 description 1
- WPPDFTBPZNZZRP-UHFFFAOYSA-N aluminum copper Chemical compound [Al].[Cu] WPPDFTBPZNZZRP-UHFFFAOYSA-N 0.000 description 1
- 238000000137 annealing Methods 0.000 description 1
- 229910052796 boron Inorganic materials 0.000 description 1
- 238000003763 carbonization Methods 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 238000001312 dry etching Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000002347 injection Methods 0.000 description 1
- 239000007924 injection Substances 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- RLOWWWKZYUNIDI-UHFFFAOYSA-N phosphinic chloride Chemical compound ClP=O RLOWWWKZYUNIDI-UHFFFAOYSA-N 0.000 description 1
- 229910052698 phosphorus Inorganic materials 0.000 description 1
- 239000011574 phosphorus Substances 0.000 description 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
- 239000010937 tungsten Substances 0.000 description 1
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Description
図1は、実施の形態にかかる炭化ケイ素半導体装置の構造の一例を示す断面図である。実施の形態にかかる炭化ケイ素半導体装置100は、ワイドバンドギャップ半導体である炭化ケイ素(SiC)を用いて製造される半導体装置である。図1に示す例では、炭化ケイ素半導体装置100は、トレンチ内にゲート電極を有するトレンチ型のVDMOSFET(Vertical Double diffused MOSFET:縦型二重拡散型MOSFET)である。MOSFETはMetal−Oxide−Semiconductor Field−Effect−Transistor(絶縁ゲート型電界効果トランジスタ)の略である。
1a n+型炭化ケイ素基板
1b n-型炭化ケイ素エピタキシャル層
2 第1n型不純物層
3 第1p+型ベース
4 n型炭化ケイ素層
5 第2p+型ベース
7 p型炭化ケイ素層
8 n+型不純物層
9 p++型不純物層
10 堆積膜
11 トレンチ
12 ゲート絶縁膜
13 ゲート電極
14 層間絶縁膜
15 金属配線
16 第1p+型ベース領域
17 第2p+型ベース領域
21,71〜73 酸化膜マスク
22 フォトレジスト
23 第2n型不純物層
24 第3n型不純物層
25 裏面電極
31,51,81,111 n型不純物
41,43 バリアメタル
42 ソース電極
61,91,121 p型不純物
100 炭化ケイ素半導体装置
Claims (8)
- 第1導電型の炭化ケイ素基板と、
前記炭化ケイ素基板の主表面に形成された第1導電型の第1炭化ケイ素層と、
前記第1炭化ケイ素層の表面に選択的に形成された第2導電型の第1不純物層および第2不純物層と、
前記第1炭化ケイ素層の表面上に形成された第1導電型の第2炭化ケイ素層と、
前記第2炭化ケイ素層における前記第2不純物層の上に選択的に形成された第2導電型の第3不純物層と、
前記第2炭化ケイ素層における前記第1炭化ケイ素層とは反対側の面上に形成された第2導電型の第3炭化ケイ素層と、
前記第3炭化ケイ素層の表面に選択的に形成された第1導電型の第4不純物層と、
前記第4不純物層、前記第3炭化ケイ素層および前記第2炭化ケイ素層を貫通し前記第1不純物層に底部が達するトレンチと、
前記トレンチの底面および側壁に沿って形成されたゲート絶縁膜と、
前記ゲート絶縁膜を介して前記トレンチに形成されたゲート電極と、
前記ゲート電極を覆う層間絶縁膜と、
前記第4不純物層および前記第3炭化ケイ素層に接する第1電極と、
前記炭化ケイ素基板の裏面に形成された第2電極と、
を備え、
前記第1炭化ケイ素層のうちの前記第1不純物層に対して前記炭化ケイ素基板の裏面側に隣接する領域における第1導電型不純物濃度が、前記第1炭化ケイ素層のうちの前記第2不純物層に対して前記炭化ケイ素基板の裏面側に隣接する領域における第1導電型不純物濃度より低いことを特徴とする炭化ケイ素半導体装置。 - 前記第1炭化ケイ素層のうちの前記第2不純物層に対して前記炭化ケイ素基板の裏面側に隣接する領域に第1導電型の第5不純物層が選択的に形成されていることにより、前記第1炭化ケイ素層のうちの前記第1不純物層に対して前記炭化ケイ素基板の裏面側に隣接する領域における第1導電型不純物濃度が、前記第1炭化ケイ素層のうちの前記第2不純物層に対して前記炭化ケイ素基板の裏面側に隣接する領域における第1導電型不純物濃度より低いことを特徴とする請求項1に記載の炭化ケイ素半導体装置。
- 前記第2不純物層の幅は前記第5不純物層の幅と同じであることを特徴とする請求項2に記載の炭化ケイ素半導体装置。
- 前記第1不純物層は、前記炭化ケイ素基板の主面と直交する方向において、前記第2不純物層より前記炭化ケイ素基板の裏面に近い位置まで形成されていることを特徴とする請求項1〜3のいずれか一つに記載の炭化ケイ素半導体装置。
- 第1導電型の炭化ケイ素基板の主表面に第1導電型の第1炭化ケイ素層を形成する工程と、
前記第1炭化ケイ素層の表面に第2導電型の第1不純物層および第2不純物層を選択的に形成する工程と、
前記第1炭化ケイ素層の表面上に第1導電型の第2炭化ケイ素層を形成する工程と、
前記第2炭化ケイ素層における前記第2不純物層の上に第2導電型の第3不純物層を選択的に形成する工程と、
前記第2炭化ケイ素層における前記第1炭化ケイ素層とは反対側の面上に第2導電型の第3炭化ケイ素層を形成する工程と、
前記第3炭化ケイ素層の表面に第1導電型の第4不純物層を選択的に形成する工程と、
前記第4不純物層および前記第3炭化ケイ素層および前記第2炭化ケイ素層を貫通し前記第1不純物層に底部が達するトレンチを形成する工程と、
前記トレンチの底面および側壁に沿ってゲート絶縁膜を形成する工程と、
前記ゲート絶縁膜を介して前記トレンチにゲート電極を形成する工程と、
前記ゲート電極を覆う層間絶縁膜を形成する工程と、
前記第4不純物層および前記第3炭化ケイ素層と接する第1電極を形成する工程と、
前記炭化ケイ素基板の裏面に第2電極を形成する工程と、
を含み、
前記第1炭化ケイ素層のうちの前記第1不純物層に対して前記炭化ケイ素基板の裏面側に隣接する領域における第1導電型不純物濃度が、前記第1炭化ケイ素層のうちの前記第2不純物層に対して前記炭化ケイ素基板の裏面側に隣接する領域における第1導電型不純物濃度より低いことを特徴とする炭化ケイ素半導体装置の製造方法。 - 前記第1炭化ケイ素層のうちの前記第2不純物層に対して前記炭化ケイ素基板の裏面側に隣接する領域に第1導電型の第5不純物層を選択的に形成する工程により、前記第1炭化ケイ素層のうちの前記第1不純物層に対して前記炭化ケイ素基板の裏面側に隣接する領域における第1導電型不純物濃度が、前記第1炭化ケイ素層のうちの前記第2不純物層に対して前記炭化ケイ素基板の裏面側に隣接する領域における第1導電型不純物濃度より低くすることを特徴とする請求項5に記載の炭化ケイ素半導体装置の製造方法。
- 前記第2不純物層を形成する際に、前記第1炭化ケイ素層のうちの前記第5不純物層に対して前記炭化ケイ素基板の主表面側に隣接する領域に第2導電型の不純物を導入することにより、前記第5不純物層に対してセルフアラインで前記第2不純物層を形成することを特徴とする請求項6に記載の炭化ケイ素半導体装置の製造方法。
- 前記第1炭化ケイ素層の表面に前記第1不純物層および前記第2不純物層を選択的に形成する工程は、
前記第1炭化ケイ素層の表面のうちの前記第1不純物層および前記第2不純物層が形成される領域を除いた領域にマスクを形成する工程と、
前記第1炭化ケイ素層の表面のうちの前記第1不純物層が形成される領域にフォトレジストを形成する工程と、
前記第1炭化ケイ素層の表面に第1導電型の不純物を導入することにより前記第5不純物層を形成する工程と、
前記フォトレジストを除去する工程と、
前記第1炭化ケイ素層の表面に第2導電型の不純物を導入することにより前記第1不純物層および前記第2不純物層を形成する工程と、
前記マスクを除去する工程と、
を含むことを特徴とする請求項6または7に記載の炭化ケイ素半導体装置の製造方法。
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