JP7182850B2 - 炭化珪素半導体装置および炭化珪素半導体装置の製造方法 - Google Patents
炭化珪素半導体装置および炭化珪素半導体装置の製造方法 Download PDFInfo
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- JP7182850B2 JP7182850B2 JP2016223538A JP2016223538A JP7182850B2 JP 7182850 B2 JP7182850 B2 JP 7182850B2 JP 2016223538 A JP2016223538 A JP 2016223538A JP 2016223538 A JP2016223538 A JP 2016223538A JP 7182850 B2 JP7182850 B2 JP 7182850B2
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- 239000004065 semiconductor Substances 0.000 title claims description 133
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 title claims description 112
- 229910010271 silicon carbide Inorganic materials 0.000 title claims description 111
- 238000004519 manufacturing process Methods 0.000 title claims description 19
- 238000000034 method Methods 0.000 title description 12
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- 239000012535 impurity Substances 0.000 claims description 96
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 93
- 239000000758 substrate Substances 0.000 claims description 76
- 238000009826 distribution Methods 0.000 claims description 55
- 229910052757 nitrogen Inorganic materials 0.000 claims description 47
- 238000005468 ion implantation Methods 0.000 claims description 46
- 229910052785 arsenic Inorganic materials 0.000 claims description 45
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 claims description 44
- 239000011229 interlayer Substances 0.000 claims description 21
- 238000005530 etching Methods 0.000 claims description 9
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- 238000000151 deposition Methods 0.000 claims description 3
- 238000009792 diffusion process Methods 0.000 description 37
- 238000000206 photolithography Methods 0.000 description 15
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 13
- 230000015572 biosynthetic process Effects 0.000 description 11
- HAYXDMNJJFVXCI-UHFFFAOYSA-N arsenic(5+) Chemical compound [As+5] HAYXDMNJJFVXCI-UHFFFAOYSA-N 0.000 description 9
- 229920005591 polysilicon Polymers 0.000 description 9
- 229910052782 aluminium Inorganic materials 0.000 description 8
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 8
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 7
- 230000001133 acceleration Effects 0.000 description 7
- 238000010438 heat treatment Methods 0.000 description 7
- 230000015556 catabolic process Effects 0.000 description 6
- 150000002500 ions Chemical class 0.000 description 6
- 238000005268 plasma chemical vapour deposition Methods 0.000 description 6
- 239000002344 surface layer Substances 0.000 description 6
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- -1 phosphorus ions Chemical class 0.000 description 4
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- 238000002513 implantation Methods 0.000 description 3
- 229910044991 metal oxide Inorganic materials 0.000 description 3
- 150000004706 metal oxides Chemical class 0.000 description 3
- 229910052759 nickel Inorganic materials 0.000 description 3
- 230000003647 oxidation Effects 0.000 description 3
- 238000007254 oxidation reaction Methods 0.000 description 3
- 229910052698 phosphorus Inorganic materials 0.000 description 3
- 239000011574 phosphorus Substances 0.000 description 3
- 229910052710 silicon Inorganic materials 0.000 description 3
- 239000010703 silicon Substances 0.000 description 3
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 2
- 239000000969 carrier Substances 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 238000001312 dry etching Methods 0.000 description 2
- 230000005684 electric field Effects 0.000 description 2
- 230000005669 field effect Effects 0.000 description 2
- 239000010931 gold Substances 0.000 description 2
- 239000011261 inert gas Substances 0.000 description 2
- 238000002789 length control Methods 0.000 description 2
- 239000005360 phosphosilicate glass Substances 0.000 description 2
- 238000007665 sagging Methods 0.000 description 2
- 229910021332 silicide Inorganic materials 0.000 description 2
- FVBUAEGBCNSCDD-UHFFFAOYSA-N silicide(4-) Chemical compound [Si-4] FVBUAEGBCNSCDD-UHFFFAOYSA-N 0.000 description 2
- 238000004544 sputter deposition Methods 0.000 description 2
- 239000010936 titanium Substances 0.000 description 2
- YCKRFDGAMUMZLT-UHFFFAOYSA-N Fluorine atom Chemical compound [F] YCKRFDGAMUMZLT-UHFFFAOYSA-N 0.000 description 1
- 229910018503 SF6 Inorganic materials 0.000 description 1
- 229910004298 SiO 2 Inorganic materials 0.000 description 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- 230000002411 adverse Effects 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 230000005465 channeling Effects 0.000 description 1
- 238000009833 condensation Methods 0.000 description 1
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- 239000013078 crystal Substances 0.000 description 1
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- 229910052731 fluorine Inorganic materials 0.000 description 1
- 239000011737 fluorine Substances 0.000 description 1
- 239000007789 gas Substances 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 125000004433 nitrogen atom Chemical group N* 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- SFZCNBIFKDRMGX-UHFFFAOYSA-N sulfur hexafluoride Chemical compound FS(F)(F)(F)(F)F SFZCNBIFKDRMGX-UHFFFAOYSA-N 0.000 description 1
- 229960000909 sulfur hexafluoride Drugs 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
- 239000012808 vapor phase Substances 0.000 description 1
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Description
実施の形態1にかかる半導体装置の構造について、炭化珪素(SiC)を用いた縦型MOSFET(以下、SiC-MOSFETとする)を例に説明する。図1は、実施の形態1にかかる半導体装置の構造を示す断面図である。図1に示す半導体装置は、炭化珪素基体10のおもて面(p型ベース層3側の面)10a側にMOSゲート(金属-酸化膜-半導体からなる絶縁ゲート)構造を備えたSiC-MOSFETである。炭化珪素基体10は、炭化珪素からなるn+型支持基板(以下、n+型炭化珪素基板(半導体チップ)とする)1上にn-型ドリフト層(第1半導体層)2およびp型ベース層(第2半導体層)3となるエピタキシャル層(炭化珪素層)10b,10cを順に成長させたエピタキシャル基板である。図1には、1つのMOSゲートからなる1つの単位セル(素子の機能単位)を示す。
実施の形態2において、実施の形態1にかかる半導体装置の具体的な適用例について説明する。図3は、実施の形態2にかかる半導体装置の構造を示す断面図である。図3には、2つの単位セル(素子の機能単位)のみを示し、これらに隣接する他の単位セルおよびエッジ終端領域を図示省略する(図4~9においても同様)。エッジ終端領域とは、活性領域の周囲を囲み、基板おもて面側の電界を緩和して耐圧を保持する領域である。活性領域とは、オン状態のときに電流が流れる領域である。
2 n-型ドリフト層
3 p型ベース層
4 n+型ソース領域
5 トレンチ
6 ゲート絶縁膜
7 ゲート電極
7a ゲート電極の表面
8 層間絶縁膜
9 ソース電極
10 炭化珪素基体
10a 炭化珪素基体のおもて面
11 ドレイン電極
12 p型ベース層とn+型ソース領域との間のpn接合
20 n+型ソース領域の全体の不純物濃度分布
20a n+型ソース領域の全体の不純物濃度分布のピークの深さ範囲
20b n+型ソース領域の全体の不純物濃度分布のピークよりも深い部分
21 n+型ソース領域の砒素濃度プロファイル
21a n+型ソース領域の砒素濃度プロファイルのピークの深さ範囲
21b n+型ソース領域の砒素濃度プロファイルのピークよりも深い部分
22 n+型ソース領域の窒素濃度プロファイル
22b n+型ソース領域の窒素濃度プロファイルのピークよりも深い部分
A n+型ソース領域の砒素濃度プロファイルのピーク
B n+型ソース領域の窒素濃度プロファイルのピーク
C n+型ソース領域の全体の不純物濃度分布のピーク
d1 n+型ソース領域の拡散深さ
d2 シリサイド層となる炭化珪素基体10の表面領域部分の基体おもて面からの深さ
L チャネル長
tp1 ゲート落ち込み量
tp2 n+型ソース領域の、ゲート絶縁膜を挟んでゲート電極と対向する部分の厚さ
Claims (3)
- 炭化珪素からなる半導体基板のおもて面に設けられた、炭化珪素からなる第1導電型の第1半導体層と、
前記第1半導体層の、前記半導体基板側に対して反対側の表面に設けられた、炭化珪素からなる第2導電型の第2半導体層と、
前記第2半導体層の内部に選択的に設けられた第1導電型半導体領域と、
前記第1導電型半導体領域および前記第2半導体層を貫通して前記第1半導体層に達するトレンチと、
前記トレンチの内部にゲート絶縁膜を介して設けられたゲート電極と、
前記トレンチの上半部内に埋め込まれて前記ゲート電極を覆う層間絶縁膜と、
前記第1導電型半導体領域および前記第2半導体層に接する第1電極と、
前記半導体基板の裏面に設けられた第2電極と、
を備え、
前記第1導電型半導体領域のうち、前記第1電極側の領域に砒素による第1不純物濃度分布を有し、前記第1不純物濃度分布よりも前記第2電極側の領域に前記第1不純物濃度分布に一部が重なるように窒素による第2不純物濃度分布を有し、
前記第2不純物濃度分布は、前記第1不純物濃度分布のピークよりも前記第2電極側に深い位置で、かつ前記半導体基板のおもて面に平行な方向に前記ゲート絶縁膜を挟んで前記ゲート電極に対向する位置に、前記第1不純物濃度分布のピークと離れて1点のピークを有し、
前記第1不純物濃度分布は、前記第2不純物濃度分布のピークよりも前記第1電極側の浅い位置に、深さ方向に所定範囲にわたって不純物濃度が一様に分布するピークを有し、
前記ゲート電極は、前記第2半導体層の、前記第1半導体層側に対して反対側の表面から所定の落ち込み量を有し、前記ゲート電極と前記層間絶縁膜との界面が前記トレンチの内部に位置する構造であることを特徴とする炭化珪素半導体装置。 - 前記第2不純物濃度分布のピークから前記第2電極側への不純物濃度の減少勾配は、前記第1不純物濃度分布のピークから前記第2電極側への不純物濃度の減少勾配よりも急峻であることを特徴とする請求項1に記載の炭化珪素半導体装置。
- 炭化珪素からなる半導体基板のおもて面に、炭化珪素からなる第1導電型の第1半導体層を形成する第1工程と、
前記第1半導体層の、前記半導体基板側に対して反対側の表面に、炭化珪素からなる第2導電型の第2半導体層を形成する第2工程と、
砒素の第1イオン注入および窒素の第2イオン注入により、前記第2半導体層の内部に第1導電型半導体領域を選択的に形成する第3工程と、
前記第1導電型半導体領域および前記第2半導体層を貫通して前記第1半導体層に達するトレンチを形成する第4工程と、
前記トレンチの内部にゲート絶縁膜を介して設けられたゲート電極を形成し、前記ゲート電極を覆い前記トレンチの上半部内に埋め込まれる層間絶縁膜を形成する第5工程と、
前記第1導電型半導体領域および前記第2半導体層に接する第1電極を形成する第6工程と、
前記半導体基板の裏面に第2電極を形成する第7工程と、
を含み、
前記第3工程では、
前記第1イオン注入により、前記第1導電型半導体領域の前記第1電極側の領域に、深さ方向に所定範囲にわたって不純物濃度が一様に分布するピークが形成されるように砒素による第1不純物濃度分布を形成し、
前記第2イオン注入により、前記第1導電型半導体領域の前記第1不純物濃度分布よりも前記第2電極側の領域に、前記第1不純物濃度分布に一部が重なるとともに、前記第1不純物濃度分布のピークよりも深い位置で、かつ前記半導体基板のおもて面に平行な方向に前記ゲート絶縁膜を挟んで前記ゲート電極に対向する位置に、前記第1不純物濃度分布のピークと離れて1点のピークが形成されるように窒素による第2不純物濃度分布を形成し、
前記第5工程は、
前記トレンチの内壁に沿って前記ゲート絶縁膜を形成する工程と、
導電層を堆積して、前記導電層で前記ゲート絶縁膜を介して前記トレンチの内部を埋め込む工程と、
前記導電層をエッチバックして、前記トレンチの内部に前記ゲート電極となる前記導電層を残し、前記ゲート電極を前記第2半導体層の、前記第1半導体層側に対して反対側の表面から所定の落ち込み量を有する構造とし、前記ゲート電極を覆う前記層間絶縁膜と前記ゲート電極との界面が前記トレンチの内部に位置する構造とする工程と、
を含むことを特徴とする炭化珪素半導体装置の製造方法。
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