JP7443853B2 - 炭化珪素半導体装置 - Google Patents
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- 239000004065 semiconductor Substances 0.000 title claims description 158
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 title claims description 47
- 229910010271 silicon carbide Inorganic materials 0.000 title claims description 45
- 239000000758 substrate Substances 0.000 claims description 61
- 239000012535 impurity Substances 0.000 claims description 26
- 230000000149 penetrating effect Effects 0.000 claims 1
- 239000010410 layer Substances 0.000 description 53
- 238000005468 ion implantation Methods 0.000 description 22
- 238000009792 diffusion process Methods 0.000 description 17
- 238000009825 accumulation Methods 0.000 description 11
- 238000004519 manufacturing process Methods 0.000 description 9
- 230000000694 effects Effects 0.000 description 8
- 239000011229 interlayer Substances 0.000 description 8
- 238000000206 photolithography Methods 0.000 description 7
- 238000010586 diagram Methods 0.000 description 6
- 238000002513 implantation Methods 0.000 description 6
- 239000000463 material Substances 0.000 description 5
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 5
- 229920005591 polysilicon Polymers 0.000 description 4
- 238000003860 storage Methods 0.000 description 4
- 238000003892 spreading Methods 0.000 description 3
- 238000005530 etching Methods 0.000 description 2
- 230000005669 field effect Effects 0.000 description 2
- 238000010438 heat treatment Methods 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 229910044991 metal oxide Inorganic materials 0.000 description 2
- 150000004706 metal oxides Chemical class 0.000 description 2
- 230000001133 acceleration Effects 0.000 description 1
- 230000004913 activation Effects 0.000 description 1
- 239000000969 carrier Substances 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 239000007943 implant Substances 0.000 description 1
- 238000010030 laminating Methods 0.000 description 1
- 239000012528 membrane Substances 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- 230000002040 relaxant effect Effects 0.000 description 1
- 229920006395 saturated elastomer Polymers 0.000 description 1
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Description
実施の形態にかかる炭化珪素半導体装置の構造について説明する。図1は、実施の形態にかかる炭化珪素半導体装置の構造を示す断面図である。図1に示す実施の形態にかかる炭化珪素半導体装置10は、炭化珪素(SiC)を半導体材料として用いた半導体基板(半導体チップ)30のおもて面側にトレンチゲート構造を備えた縦型MOSFETである。半導体基板30は、炭化珪素を半導体材料として用いたn+型出発基板31のおもて面上に、n-型ドリフト領域(第1半導体領域)2およびp型ベース領域(第2半導体領域)3となる各エピタキシャル層32,33を順に積層したエピタキシャル基板である。
次に、実施の形態にかかる炭化珪素半導体装置10(図1参照)の電圧・電流特性について検証した。図9は、実施の形態にかかる炭化珪素半導体装置の電圧・電流特性を模式的に示す特性図である。図9の横軸および縦軸には、それぞれ実施の形態にかかる炭化珪素半導体装置10のドレイン・ソース間電圧Vdsおよびドレイン・ソース間電流Idsを示す。図10は、図1の等価回路を示す回路図である。
2 n-型ドリフト領域
3 p型ベース領域
3a チャネル
4a n+型ソース領域
4b n型ソース抵抗領域
4c p型領域
5 p++型コンタクト領域
6 トレンチ
7 ゲート絶縁膜
8 ゲート電極
9 層間絶縁膜
10 炭化珪素半導体装置
11 オーミック電極
12 ソース電極
13 ドレイン電極
21,22,22a,22b p+型領域
23 n型電流拡散領域
23a,23b n型領域
30 半導体基板
31 n+型出発基板
32 n-型エピタキシャル層
32a n-型エピタキシャル層の厚さを増した部分
33 p型エピタキシャル層
40 酸化膜マスク
41,42 斜めイオン注入
Rs ソース抵抗
X 半導体基板のおもて面に平行な第1方向
Y 半導体基板のおもて面に平行でかつ第1方向と直交する第2方向
Z 深さ方向
θ1, θ2 斜めイオン注入の注入角度
Claims (1)
- 炭化珪素からなる半導体基板と、
前記半導体基板の内部に設けられた第1導電型の第1半導体領域と、
前記半導体基板の第1主面と前記第1半導体領域との間に設けられた第2導電型の第2半導体領域と、
前記半導体基板の第1主面と前記第2半導体領域との間に設けられた第1導電型の第3半導体領域と、
前記第2半導体領域と前記第3半導体領域との間に、深さ方向に前記第3半導体領域に隣接して設けられた、前記第3半導体領域よりも不純物濃度の低い第1導電型の第4半導体領域と、
前記第3半導体領域、前記第4半導体領域および前記第2半導体領域を貫通して前記第1半導体領域に達するトレンチと、
前記トレンチの内壁に沿って設けられたゲート絶縁膜と、
前記トレンチの内部において前記ゲート絶縁膜の上に設けられたゲート電極と、
前記第3半導体領域および前記第4半導体領域と、前記トレンチの内壁の前記ゲート絶縁膜と、の間に、前記第3半導体領域、前記第4半導体領域および前記ゲート絶縁膜に隣接して設けられた第2導電型の第5半導体領域と、
前記第3半導体領域、前記第4半導体領域および前記第2半導体領域に電気的に接続された第1電極と、
前記半導体基板の第2主面に設けられた第2電極と、
を備え、
前記第5半導体領域は、深さ方向に前記第1主面から前記トレンチの側壁に沿って前記第2主面側へ延在し、前記第3半導体領域を貫通して、前記第4半導体領域の内部で終端していることを特徴とする炭化珪素半導体装置。
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US17/159,934 US11538902B2 (en) | 2020-03-17 | 2021-01-27 | Silicon carbide semiconductor device |
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Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2009231545A (ja) | 2008-03-24 | 2009-10-08 | Fuji Electric Device Technology Co Ltd | 炭化珪素mos型半導体装置 |
WO2013118437A1 (ja) | 2012-02-10 | 2013-08-15 | パナソニック株式会社 | 半導体装置及びその製造方法 |
WO2017126472A1 (ja) | 2016-01-20 | 2017-07-27 | ローム株式会社 | 半導体装置 |
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JP2015065365A (ja) | 2013-09-26 | 2015-04-09 | 三菱電機株式会社 | 絶縁ゲート型炭化珪素半導体装置およびその製造方法 |
JP7326725B2 (ja) * | 2018-11-08 | 2023-08-16 | 富士電機株式会社 | 半導体装置 |
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WO2013118437A1 (ja) | 2012-02-10 | 2013-08-15 | パナソニック株式会社 | 半導体装置及びその製造方法 |
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