JP2014187085A5 - - Google Patents

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Publication number
JP2014187085A5
JP2014187085A5 JP2013059337A JP2013059337A JP2014187085A5 JP 2014187085 A5 JP2014187085 A5 JP 2014187085A5 JP 2013059337 A JP2013059337 A JP 2013059337A JP 2013059337 A JP2013059337 A JP 2013059337A JP 2014187085 A5 JP2014187085 A5 JP 2014187085A5
Authority
JP
Japan
Prior art keywords
gate electrode
semiconductor layer
semiconductor
gate
threshold
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Abandoned
Application number
JP2013059337A
Other languages
English (en)
Japanese (ja)
Other versions
JP2014187085A (ja
Filing date
Publication date
Application filed filed Critical
Priority to JP2013059337A priority Critical patent/JP2014187085A/ja
Priority claimed from JP2013059337A external-priority patent/JP2014187085A/ja
Priority to CN201310731532.8A priority patent/CN104064593A/zh
Publication of JP2014187085A publication Critical patent/JP2014187085A/ja
Publication of JP2014187085A5 publication Critical patent/JP2014187085A5/ja
Abandoned legal-status Critical Current

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JP2013059337A 2013-03-22 2013-03-22 半導体装置 Abandoned JP2014187085A (ja)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP2013059337A JP2014187085A (ja) 2013-03-22 2013-03-22 半導体装置
CN201310731532.8A CN104064593A (zh) 2013-03-22 2013-12-26 半导体装置

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2013059337A JP2014187085A (ja) 2013-03-22 2013-03-22 半導体装置

Publications (2)

Publication Number Publication Date
JP2014187085A JP2014187085A (ja) 2014-10-02
JP2014187085A5 true JP2014187085A5 (enExample) 2015-03-26

Family

ID=51552223

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2013059337A Abandoned JP2014187085A (ja) 2013-03-22 2013-03-22 半導体装置

Country Status (2)

Country Link
JP (1) JP2014187085A (enExample)
CN (1) CN104064593A (enExample)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP6646363B2 (ja) * 2015-06-02 2020-02-14 株式会社アドバンテスト 半導体装置
US10276681B2 (en) 2016-02-29 2019-04-30 Infineon Technologies Austria Ag Double gate transistor device and method of operating
US10530360B2 (en) * 2016-02-29 2020-01-07 Infineon Technologies Austria Ag Double gate transistor device and method of operating
CN107393954B (zh) * 2017-08-02 2019-11-01 电子科技大学 一种GaN异质结纵向场效应管
JP7021034B2 (ja) * 2018-09-18 2022-02-16 株式会社東芝 半導体装置
CN109461655B (zh) * 2018-09-21 2022-03-11 中国电子科技集团公司第五十五研究所 具有多栅结构的氮化物高电子迁移率晶体管制造方法

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2007150282A (ja) * 2005-11-02 2007-06-14 Sharp Corp 電界効果トランジスタ
JP5597921B2 (ja) * 2008-12-22 2014-10-01 サンケン電気株式会社 半導体装置
JP5056883B2 (ja) * 2010-03-26 2012-10-24 サンケン電気株式会社 半導体装置
JP2012028705A (ja) * 2010-07-27 2012-02-09 Sumitomo Electric Ind Ltd 半導体装置

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