JP2012049491A5 - - Google Patents

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Publication number
JP2012049491A5
JP2012049491A5 JP2011012510A JP2011012510A JP2012049491A5 JP 2012049491 A5 JP2012049491 A5 JP 2012049491A5 JP 2011012510 A JP2011012510 A JP 2011012510A JP 2011012510 A JP2011012510 A JP 2011012510A JP 2012049491 A5 JP2012049491 A5 JP 2012049491A5
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JP
Japan
Prior art keywords
semiconductor device
insulating film
region
conductivity type
less
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Application number
JP2011012510A
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English (en)
Japanese (ja)
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JP5699628B2 (ja
JP2012049491A (ja
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Publication date
Application filed filed Critical
Priority claimed from JP2011012510A external-priority patent/JP5699628B2/ja
Priority to JP2011012510A priority Critical patent/JP5699628B2/ja
Priority to KR1020127019037A priority patent/KR20130092377A/ko
Priority to CN2011800204785A priority patent/CN103168361A/zh
Priority to PCT/JP2011/064897 priority patent/WO2012014617A1/ja
Priority to CA2796857A priority patent/CA2796857A1/en
Priority to EP11812210.0A priority patent/EP2600402A4/en
Priority to TW100126054A priority patent/TW201210025A/zh
Priority to US13/190,001 priority patent/US20120018743A1/en
Publication of JP2012049491A publication Critical patent/JP2012049491A/ja
Publication of JP2012049491A5 publication Critical patent/JP2012049491A5/ja
Publication of JP5699628B2 publication Critical patent/JP5699628B2/ja
Application granted granted Critical
Active legal-status Critical Current
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JP2011012510A 2010-07-26 2011-01-25 半導体装置 Active JP5699628B2 (ja)

Priority Applications (8)

Application Number Priority Date Filing Date Title
JP2011012510A JP5699628B2 (ja) 2010-07-26 2011-01-25 半導体装置
KR1020127019037A KR20130092377A (ko) 2010-07-26 2011-06-29 반도체 장치
CN2011800204785A CN103168361A (zh) 2010-07-26 2011-06-29 半导体器件
PCT/JP2011/064897 WO2012014617A1 (ja) 2010-07-26 2011-06-29 半導体装置
CA2796857A CA2796857A1 (en) 2010-07-26 2011-06-29 Semiconductor device
EP11812210.0A EP2600402A4 (en) 2010-07-26 2011-06-29 SEMICONDUCTOR DEVICE
TW100126054A TW201210025A (en) 2010-07-26 2011-07-22 Semiconductor device
US13/190,001 US20120018743A1 (en) 2010-07-26 2011-07-25 Semiconductor device

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2010167004 2010-07-26
JP2010167004 2010-07-26
JP2011012510A JP5699628B2 (ja) 2010-07-26 2011-01-25 半導体装置

Publications (3)

Publication Number Publication Date
JP2012049491A JP2012049491A (ja) 2012-03-08
JP2012049491A5 true JP2012049491A5 (enExample) 2014-01-23
JP5699628B2 JP5699628B2 (ja) 2015-04-15

Family

ID=45492856

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2011012510A Active JP5699628B2 (ja) 2010-07-26 2011-01-25 半導体装置

Country Status (8)

Country Link
US (1) US20120018743A1 (enExample)
EP (1) EP2600402A4 (enExample)
JP (1) JP5699628B2 (enExample)
KR (1) KR20130092377A (enExample)
CN (1) CN103168361A (enExample)
CA (1) CA2796857A1 (enExample)
TW (1) TW201210025A (enExample)
WO (1) WO2012014617A1 (enExample)

Families Citing this family (19)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8674439B2 (en) 2010-08-02 2014-03-18 Microsemi Corporation Low loss SiC MOSFET
JP5668576B2 (ja) * 2011-04-01 2015-02-12 住友電気工業株式会社 炭化珪素半導体装置
JP5751113B2 (ja) * 2011-09-28 2015-07-22 住友電気工業株式会社 炭化珪素半導体装置の製造方法
JP5811829B2 (ja) * 2011-12-22 2015-11-11 住友電気工業株式会社 半導体装置の製造方法
CN102664192B (zh) * 2012-05-08 2015-03-11 北京大学 一种自适应复合机制隧穿场效应晶体管及其制备方法
JP2014007310A (ja) * 2012-06-26 2014-01-16 Sumitomo Electric Ind Ltd 炭化珪素半導体装置の製造方法および炭化珪素半導体装置
JP6068042B2 (ja) 2012-08-07 2017-01-25 住友電気工業株式会社 炭化珪素半導体装置およびその製造方法
JP2014038896A (ja) * 2012-08-13 2014-02-27 Sumitomo Electric Ind Ltd 炭化珪素半導体装置
JP5646569B2 (ja) 2012-09-26 2014-12-24 株式会社東芝 半導体装置
US9515145B2 (en) * 2013-02-28 2016-12-06 Mitsubishi Electric Corporation Vertical MOSFET device with steady on-resistance
WO2014149047A1 (en) * 2013-03-21 2014-09-25 Microsemi Corporation Sic power vertical dmos with increased safe operating area
JP6242633B2 (ja) * 2013-09-03 2017-12-06 株式会社東芝 半導体装置
US10304939B2 (en) * 2013-11-13 2019-05-28 Mitsubishi Electric Corporation SiC semiconductor device having pn junction interface and method for manufacturing the SiC semiconductor device
JP6089015B2 (ja) * 2014-10-17 2017-03-01 株式会社東芝 半導体装置
CN107331603B (zh) * 2017-03-20 2020-05-01 中国电子科技集团公司第五十五研究所 一种碳化硅mosfet单胞结构的制造方法
CN108257872A (zh) * 2018-01-12 2018-07-06 北京品捷电子科技有限公司 一种SiC基DI-MOSFET的制备方法及SiC基DI-MOSFET
GB2589543A (en) * 2019-09-09 2021-06-09 Mqsemi Ag Method for forming a low injection P-type contact region and power semiconductor devices with the same
CN111129155A (zh) * 2019-12-25 2020-05-08 重庆伟特森电子科技有限公司 一种低栅漏电容碳化硅di-mosfet制备方法
TW202345215A (zh) * 2022-05-06 2023-11-16 國立陽明交通大學 垂直雙重擴散式金氧半場效電晶體的源極基體自動對準方法

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US5877515A (en) * 1995-10-10 1999-03-02 International Rectifier Corporation SiC semiconductor device
JP2000106428A (ja) * 1998-09-28 2000-04-11 Toshiba Corp 半導体装置
EP1215730B9 (en) * 1999-09-07 2007-08-01 Sixon Inc. SiC WAFER, SiC SEMICONDUCTOR DEVICE AND PRODUCTION METHOD OF SiC WAFER
JP4843854B2 (ja) * 2001-03-05 2011-12-21 住友電気工業株式会社 Ｍｏｓデバイス
JP3697211B2 (ja) * 2002-01-10 2005-09-21 日本原子力研究所 炭化珪素半導体素子及びその絶縁膜の形成方法
US7221010B2 (en) * 2002-12-20 2007-05-22 Cree, Inc. Vertical JFET limited silicon carbide power metal-oxide semiconductor field effect transistors
JP5368140B2 (ja) * 2003-03-28 2013-12-18 三菱電機株式会社 ＳｉＣを用いた縦型ＭＯＳＦＥＴの製造方法
JP2005167035A (ja) * 2003-12-03 2005-06-23 Kansai Electric Power Co Inc:The 炭化珪素半導体素子およびその製造方法
JP4775102B2 (ja) * 2005-05-09 2011-09-21 住友電気工業株式会社 半導体装置の製造方法
US7727904B2 (en) * 2005-09-16 2010-06-01 Cree, Inc. Methods of forming SiC MOSFETs with high inversion layer mobility
WO2007086196A1 (ja) * 2006-01-30 2007-08-02 Sumitomo Electric Industries, Ltd. 炭化珪素半導体装置の製造方法
US20090134476A1 (en) * 2007-11-13 2009-05-28 Thunderbird Technologies, Inc. Low temperature coefficient field effect transistors and design and fabrication methods
JP5504597B2 (ja) * 2007-12-11 2014-05-28 住友電気工業株式会社 炭化ケイ素半導体装置およびその製造方法
JP2009272365A (ja) * 2008-05-01 2009-11-19 Renesas Technology Corp 半導体装置の製造方法
JP5564781B2 (ja) * 2008-07-07 2014-08-06 住友電気工業株式会社 炭化ケイ素半導体装置およびその製造方法
JPWO2010110253A1 (ja) * 2009-03-27 2012-09-27 住友電気工業株式会社 Ｍｏｓｆｅｔおよびｍｏｓｆｅｔの製造方法
KR102057221B1 (ko) * 2009-09-16 2019-12-18 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치 및 그 제조 방법

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