KR20130092377A - 반도체 장치 - Google Patents

반도체 장치 Download PDF

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Publication number
KR20130092377A
KR20130092377A KR1020127019037A KR20127019037A KR20130092377A KR 20130092377 A KR20130092377 A KR 20130092377A KR 1020127019037 A KR1020127019037 A KR 1020127019037A KR 20127019037 A KR20127019037 A KR 20127019037A KR 20130092377 A KR20130092377 A KR 20130092377A
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KR
South Korea
Prior art keywords
semiconductor device
type
region
silicon carbide
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Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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KR1020127019037A
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English (en)
Korean (ko)
Inventor
도루 히요시
게이지 와다
다케요시 마스다
히로무 시오미
Original Assignee
스미토모덴키고교가부시키가이샤
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Application filed by 스미토모덴키고교가부시키가이샤 filed Critical 스미토모덴키고교가부시키가이샤
Publication of KR20130092377A publication Critical patent/KR20130092377A/ko
Withdrawn legal-status Critical Current

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/64—Double-diffused metal-oxide semiconductor [DMOS] FETs
    • H10D30/66—Vertical DMOS [VDMOS] FETs
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/0445—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising crystalline silicon carbide
    • H01L21/048—Making electrodes
    • H01L21/049—Conductor-insulator-semiconductor electrodes, e.g. MIS contacts
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D12/00—Bipolar devices controlled by the field effect, e.g. insulated-gate bipolar transistors [IGBT]
    • H10D12/01—Manufacture or treatment
    • H10D12/031—Manufacture or treatment of IGBTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D12/00—Bipolar devices controlled by the field effect, e.g. insulated-gate bipolar transistors [IGBT]
    • H10D12/411—Insulated-gate bipolar transistors [IGBT]
    • H10D12/441—Vertical IGBTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/01—Manufacture or treatment
    • H10D30/021—Manufacture or treatment of FETs having insulated gates [IGFET]
    • H10D30/028—Manufacture or treatment of FETs having insulated gates [IGFET] of double-diffused metal oxide semiconductor [DMOS] FETs
    • H10D30/0291—Manufacture or treatment of FETs having insulated gates [IGFET] of double-diffused metal oxide semiconductor [DMOS] FETs of vertical DMOS [VDMOS] FETs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/17—Semiconductor regions connected to electrodes not carrying current to be rectified, amplified or switched, e.g. channel regions
    • H10D62/393—Body regions of DMOS transistors or IGBTs 
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/40—Crystalline structures
    • H10D62/405—Orientations of crystalline planes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
    • H10D62/83—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group IV materials, e.g. B-doped Si or undoped Ge
    • H10D62/832—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group IV materials, e.g. B-doped Si or undoped Ge being Group IV materials comprising two or more elements, e.g. SiGe
    • H10D62/8325—Silicon carbide

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  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Physics & Mathematics (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Chemical & Material Sciences (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Recrystallisation Techniques (AREA)
  • Insulated Gate Type Field-Effect Transistor (AREA)
  • Formation Of Insulating Films (AREA)
KR1020127019037A 2010-07-26 2011-06-29 반도체 장치 Withdrawn KR20130092377A (ko)

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
JP2010167004 2010-07-26
JPJP-P-2010-167004 2010-07-26
JP2011012510A JP5699628B2 (ja) 2010-07-26 2011-01-25 半導体装置
JPJP-P-2011-012510 2011-01-25
PCT/JP2011/064897 WO2012014617A1 (ja) 2010-07-26 2011-06-29 半導体装置

Publications (1)

Publication Number Publication Date
KR20130092377A true KR20130092377A (ko) 2013-08-20

Family

ID=45492856

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020127019037A Withdrawn KR20130092377A (ko) 2010-07-26 2011-06-29 반도체 장치

Country Status (8)

Country Link
US (1) US20120018743A1 (enExample)
EP (1) EP2600402A4 (enExample)
JP (1) JP5699628B2 (enExample)
KR (1) KR20130092377A (enExample)
CN (1) CN103168361A (enExample)
CA (1) CA2796857A1 (enExample)
TW (1) TW201210025A (enExample)
WO (1) WO2012014617A1 (enExample)

Families Citing this family (19)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8674439B2 (en) 2010-08-02 2014-03-18 Microsemi Corporation Low loss SiC MOSFET
JP5668576B2 (ja) * 2011-04-01 2015-02-12 住友電気工業株式会社 炭化珪素半導体装置
JP5751113B2 (ja) * 2011-09-28 2015-07-22 住友電気工業株式会社 炭化珪素半導体装置の製造方法
JP5811829B2 (ja) * 2011-12-22 2015-11-11 住友電気工業株式会社 半導体装置の製造方法
CN102664192B (zh) 2012-05-08 2015-03-11 北京大学 一种自适应复合机制隧穿场效应晶体管及其制备方法
JP2014007310A (ja) * 2012-06-26 2014-01-16 Sumitomo Electric Ind Ltd 炭化珪素半導体装置の製造方法および炭化珪素半導体装置
JP6068042B2 (ja) 2012-08-07 2017-01-25 住友電気工業株式会社 炭化珪素半導体装置およびその製造方法
JP2014038896A (ja) * 2012-08-13 2014-02-27 Sumitomo Electric Ind Ltd 炭化珪素半導体装置
JP5646569B2 (ja) 2012-09-26 2014-12-24 株式会社東芝 半導体装置
US9515145B2 (en) * 2013-02-28 2016-12-06 Mitsubishi Electric Corporation Vertical MOSFET device with steady on-resistance
WO2014149047A1 (en) * 2013-03-21 2014-09-25 Microsemi Corporation Sic power vertical dmos with increased safe operating area
JP6242633B2 (ja) * 2013-09-03 2017-12-06 株式会社東芝 半導体装置
DE112014005188T5 (de) * 2013-11-13 2016-07-21 Mitsubishi Electric Corporation Verfahren zum Herstellen eines Halbleiterbauteils
JP6089015B2 (ja) * 2014-10-17 2017-03-01 株式会社東芝 半導体装置
CN107331603B (zh) * 2017-03-20 2020-05-01 中国电子科技集团公司第五十五研究所 一种碳化硅mosfet单胞结构的制造方法
CN108257872A (zh) * 2018-01-12 2018-07-06 北京品捷电子科技有限公司 一种SiC基DI-MOSFET的制备方法及SiC基DI-MOSFET
GB2589543A (en) * 2019-09-09 2021-06-09 Mqsemi Ag Method for forming a low injection P-type contact region and power semiconductor devices with the same
CN111129155A (zh) * 2019-12-25 2020-05-08 重庆伟特森电子科技有限公司 一种低栅漏电容碳化硅di-mosfet制备方法
TW202345215A (zh) * 2022-05-06 2023-11-16 國立陽明交通大學 垂直雙重擴散式金氧半場效電晶體的源極基體自動對準方法

Family Cites Families (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5877515A (en) * 1995-10-10 1999-03-02 International Rectifier Corporation SiC semiconductor device
JP2000106428A (ja) * 1998-09-28 2000-04-11 Toshiba Corp 半導体装置
TW565630B (en) * 1999-09-07 2003-12-11 Sixon Inc SiC wafer, SiC semiconductor device and method for manufacturing SiC wafer
JP4843854B2 (ja) * 2001-03-05 2011-12-21 住友電気工業株式会社 Ｍｏｓデバイス
JP3697211B2 (ja) * 2002-01-10 2005-09-21 日本原子力研究所 炭化珪素半導体素子及びその絶縁膜の形成方法
US7221010B2 (en) * 2002-12-20 2007-05-22 Cree, Inc. Vertical JFET limited silicon carbide power metal-oxide semiconductor field effect transistors
JP5368140B2 (ja) * 2003-03-28 2013-12-18 三菱電機株式会社 ＳｉＣを用いた縦型ＭＯＳＦＥＴの製造方法
JP2005167035A (ja) * 2003-12-03 2005-06-23 Kansai Electric Power Co Inc:The 炭化珪素半導体素子およびその製造方法
JP4775102B2 (ja) * 2005-05-09 2011-09-21 住友電気工業株式会社 半導体装置の製造方法
US7727904B2 (en) * 2005-09-16 2010-06-01 Cree, Inc. Methods of forming SiC MOSFETs with high inversion layer mobility
KR101245899B1 (ko) * 2006-01-30 2013-03-20 스미토모덴키고교가부시키가이샤 탄화규소 반도체 장치의 제조 방법
US20090134476A1 (en) * 2007-11-13 2009-05-28 Thunderbird Technologies, Inc. Low temperature coefficient field effect transistors and design and fabrication methods
JP5504597B2 (ja) * 2007-12-11 2014-05-28 住友電気工業株式会社 炭化ケイ素半導体装置およびその製造方法
JP2009272365A (ja) * 2008-05-01 2009-11-19 Renesas Technology Corp 半導体装置の製造方法
JP5564781B2 (ja) * 2008-07-07 2014-08-06 住友電気工業株式会社 炭化ケイ素半導体装置およびその製造方法
EP2413365A4 (en) * 2009-03-27 2013-05-08 Sumitomo Electric Industries MOSFET AND MOSFET MANUFACTURING METHOD
CN102511082B (zh) * 2009-09-16 2016-04-27 株式会社半导体能源研究所 半导体器件及其制造方法

Also Published As

Publication number Publication date
CA2796857A1 (en) 2012-02-02
JP2012049491A (ja) 2012-03-08
JP5699628B2 (ja) 2015-04-15
US20120018743A1 (en) 2012-01-26
WO2012014617A1 (ja) 2012-02-02
CN103168361A (zh) 2013-06-19
EP2600402A4 (en) 2013-12-25
EP2600402A1 (en) 2013-06-05
TW201210025A (en) 2012-03-01

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