JP4775102B2 - 半導体装置の製造方法 - Google Patents
半導体装置の製造方法 Download PDFInfo
- Publication number
- JP4775102B2 JP4775102B2 JP2006126432A JP2006126432A JP4775102B2 JP 4775102 B2 JP4775102 B2 JP 4775102B2 JP 2006126432 A JP2006126432 A JP 2006126432A JP 2006126432 A JP2006126432 A JP 2006126432A JP 4775102 B2 JP4775102 B2 JP 4775102B2
- Authority
- JP
- Japan
- Prior art keywords
- sic
- film
- facet
- plane
- manufacturing
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
- 238000004519 manufacturing process Methods 0.000 title claims description 46
- 239000004065 semiconductor Substances 0.000 title claims description 46
- 229910010271 silicon carbide Inorganic materials 0.000 claims description 153
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 claims description 150
- 239000011248 coating agent Substances 0.000 claims description 31
- 238000000576 coating method Methods 0.000 claims description 31
- 238000010438 heat treatment Methods 0.000 claims description 20
- 238000000034 method Methods 0.000 claims description 18
- 239000012535 impurity Substances 0.000 claims description 14
- 229910052710 silicon Inorganic materials 0.000 claims description 11
- 230000004913 activation Effects 0.000 claims description 4
- 230000001590 oxidative effect Effects 0.000 claims description 4
- 239000010703 silicon Substances 0.000 claims description 4
- 230000003213 activating effect Effects 0.000 claims description 3
- 239000000470 constituent Substances 0.000 claims description 2
- 239000013078 crystal Substances 0.000 description 72
- 239000000758 substrate Substances 0.000 description 21
- 238000000137 annealing Methods 0.000 description 6
- 230000015572 biosynthetic process Effects 0.000 description 5
- 238000005468 ion implantation Methods 0.000 description 4
- 229910052799 carbon Inorganic materials 0.000 description 3
- 238000003763 carbonization Methods 0.000 description 3
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 238000005530 etching Methods 0.000 description 2
- 230000005669 field effect Effects 0.000 description 2
- 229910000041 hydrogen chloride Inorganic materials 0.000 description 2
- IXCSERBJSXMMFS-UHFFFAOYSA-N hydrogen chloride Substances Cl.Cl IXCSERBJSXMMFS-UHFFFAOYSA-N 0.000 description 2
- 230000001788 irregular Effects 0.000 description 2
- 238000000859 sublimation Methods 0.000 description 2
- 230000008022 sublimation Effects 0.000 description 2
- 229910052984 zinc sulfide Inorganic materials 0.000 description 2
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical group [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 1
- 229910052786 argon Inorganic materials 0.000 description 1
- 239000000969 carrier Substances 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 238000002050 diffraction method Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 239000007789 gas Substances 0.000 description 1
- 239000001257 hydrogen Substances 0.000 description 1
- 229910052739 hydrogen Inorganic materials 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 238000001020 plasma etching Methods 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- WGPCGCOKHWGKJJ-UHFFFAOYSA-N sulfanylidenezinc Chemical compound [Zn]=S WGPCGCOKHWGKJJ-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
- C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
- C23C16/32—Carbides
- C23C16/325—Silicon carbide
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02367—Substrates
- H01L21/0237—Materials
- H01L21/02373—Group 14 semiconducting materials
- H01L21/02378—Silicon carbide
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02367—Substrates
- H01L21/02428—Structure
- H01L21/0243—Surface structure
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02367—Substrates
- H01L21/02433—Crystal orientation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02518—Deposited layers
- H01L21/02521—Materials
- H01L21/02524—Group 14 semiconducting materials
- H01L21/02529—Silicon carbide
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02612—Formation types
- H01L21/02617—Deposition types
- H01L21/02634—Homoepitaxy
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/0445—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising crystalline silicon carbide
- H01L21/0455—Making n or p doped regions or layers, e.g. using diffusion
- H01L21/046—Making n or p doped regions or layers, e.g. using diffusion using ion implantation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/04—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their crystalline structure, e.g. polycrystalline, cubic or particular orientation of crystalline planes
- H01L29/045—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their crystalline structure, e.g. polycrystalline, cubic or particular orientation of crystalline planes by their particular orientation of crystalline planes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/10—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode not carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
- H01L29/1025—Channel region of field-effect devices
- H01L29/1029—Channel region of field-effect devices of field-effect transistors
- H01L29/1033—Channel region of field-effect devices of field-effect transistors with insulated gate, e.g. characterised by the length, the width, the geometric contour or the doping structure
- H01L29/1037—Channel region of field-effect devices of field-effect transistors with insulated gate, e.g. characterised by the length, the width, the geometric contour or the doping structure and non-planar channel
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66053—Multistep manufacturing processes of devices having a semiconductor body comprising crystalline silicon carbide
- H01L29/66068—Multistep manufacturing processes of devices having a semiconductor body comprising crystalline silicon carbide the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Chemical & Material Sciences (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Crystallography & Structural Chemistry (AREA)
- Ceramic Engineering (AREA)
- Materials Engineering (AREA)
- Inorganic Chemistry (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- General Chemical & Material Sciences (AREA)
- Insulated Gate Type Field-Effect Transistor (AREA)
- Recrystallisation Techniques (AREA)
- Formation Of Insulating Films (AREA)
- Electrodes Of Semiconductors (AREA)
Description
図1は、本発明の実施の形態1におけるMOSFETの構成を示す断面図である。図1を参照して、半導体装置としてのMOSFET30は、SiC基板10と、SiCよりなる半導体膜としてのp型のSiC膜11とを備えている。SiC基板10を構成するSiC結晶は、たとえば(0001)面が[11−20]方向に8°だけ傾斜する(つまり、8°のオフ角を有する)、または[1−100]方向に8°のオフ角を有するように形成されている。SiC膜11は、SiC基板10上にホモエピタキシャル成長した膜であり、SiC基板10の結晶構造を引き継いでいる。SiC膜11はその表面にファセット形成層11aを有している。なお、図1においては、説明の便宜のためにSiC膜11とファセット形成層11aとの間に境界線を引いているが、実際にこのような境界線は存在せず、SiC膜11の表面にファセットが形成されている。
図1を参照して、MOSFET30は、n型コンタクト領域12a,12bと、絶縁膜13と、ソース電極17と、ゲート電極18と、ドレイン電極19とをさらに備えている。n型コンタクト領域12a,12bはSiC膜11の表面に形成されている。SiC膜11上には絶縁膜13が形成されている。絶縁膜13には孔14a,14bの各々が形成されており、孔14a,14bの各々の底部に露出したSiC膜11の表面にはn型コンタクト領域12a,12bが形成されている。n型コンタクト領域12aの表面上にはソース電極17が形成されており、n型コンタクト領域12bの表面上にはドレイン電極19が形成されている。ここで、ソース電極17およびドレイン電極19と、SiC膜11との接触部分にn型コンタクト領域12a,12bを形成することで、ソース電極17およびドレイン電極19と、SiC膜11との接触抵抗を低減することができる。また、ソース電極17とドレイン電極19とに挟まれた部分の絶縁膜13a上にはゲート電極18が形成されている。これにより、絶縁膜13aはMOSFET30のゲート絶縁膜となり、絶縁膜13aの垂直真下に存在するファセット形成層11aはMOSFET30のチャネル16となる。
これにより、SiC膜11が均一に再構成され、ファセット1が広い面積で成長する。
本実施の形態では、図1に示すMOSFET30についての、実施の形態1とは別の製造方法を説明する。
実施の形態1では、図1に示すようにチャネル16となるファセット形成層11aが複数のファセット1により構成されている場合について示した。しかし、本発明はこのような場合の他、たとえば図15に示すように、MOSFET30aのチャネル16となるファセット形成層11aが1つのファセット1により構成されていてもよい。この場合には、ファセット1を構成する結晶面3に対して平行にゲート電極18およびチャネル16が形成されており、結晶面3内にチャネル16が含まれている。これにより、ファセット1を構成する結晶面3内には凹凸が特に少ないので、界面準位の密度が特に小さくなり、キャリアの移動度を向上することができる。
図16は、本発明の実施の形態4におけるMOSFETの構成を示す断面図である。図16を参照して、本実施の形態のMOSFET30bにおいては、SiC膜11の表面にトレンチ(溝)25a,25bの各々が形成されている。チャネル16となるファセット形成層11aはトレンチ25a,25bの両方に隣接して形成されている。また、ソース電極17およびドレイン電極19の各々は、トレンチ25a,25bの各々の内壁に沿うように形成されている。
Claims (4)
- 炭化ケイ素よりなる半導体膜を形成する工程と、
ケイ素を主な構成元素とする被覆膜を前記半導体膜の表面に形成する被覆膜工程と、
前記被覆膜工程の後、前記半導体膜の表面に、底面を有する溝を、間隔を隔てて2つ形成する工程と、
前記溝の内壁において前記底面を含む領域に不純物を注入することによりコンタクト領域を形成する工程と、
前記溝が形成された前記半導体膜の表面に前記被覆膜からケイ素を供給した状態で、前記半導体膜を熱処理する熱処理工程と、
前記熱処理工程によって、2つの前記溝の間において前記半導体膜の表面に得られたファセットをチャネルとするチャネル形成工程と、
前記溝の内部において、前記コンタクト領域上に電極を形成する工程とを備える、半導体装置の製造方法。 - 前記熱処理工程の前に、前記半導体膜の表面を平坦化する工程をさらに備える、請求項1に記載の半導体装置の製造方法。
- 前記チャネル形成工程は、前記被覆膜を酸化する工程を含む、請求項1または2に記載の半導体装置の製造方法。
- 前記不純物を活性化する活性化工程をさらに備え、
前記熱処理工程と前記活性化工程とを同一工程で行なうことを特徴とする、請求項1〜3のいずれかに記載の半導体装置の製造方法。
Priority Applications (9)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2006126432A JP4775102B2 (ja) | 2005-05-09 | 2006-04-28 | 半導体装置の製造方法 |
CA002636313A CA2636313A1 (en) | 2006-04-28 | 2006-10-26 | Semiconductor device and manufacturing method therefor |
EP06822346A EP2015363B1 (en) | 2006-04-28 | 2006-10-26 | Semiconductor device |
AT06822346T ATE537561T1 (de) | 2006-04-28 | 2006-10-26 | Halbleiterbauelement |
US12/158,382 US8283674B2 (en) | 2006-04-28 | 2006-10-26 | Semiconductor device with silicon carbide channel |
CN2006800519163A CN101336484B (zh) | 2006-04-28 | 2006-10-26 | 半导体器件及其制造方法 |
KR1020087014892A KR100983852B1 (ko) | 2006-04-28 | 2006-10-26 | 반도체 장치 및 그 제조 방법 |
PCT/JP2006/321370 WO2007125617A1 (ja) | 2006-04-28 | 2006-10-26 | 半導体装置およびその製造方法 |
TW095141517A TW200742072A (en) | 2006-04-28 | 2006-11-09 | Semiconductor device and manufacturing method therefor |
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2005135990 | 2005-05-09 | ||
JP2005135990 | 2005-05-09 | ||
JP2006126432A JP4775102B2 (ja) | 2005-05-09 | 2006-04-28 | 半導体装置の製造方法 |
Related Child Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2011099549A Division JP2011181949A (ja) | 2005-05-09 | 2011-04-27 | 半導体装置の製造方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2006344942A JP2006344942A (ja) | 2006-12-21 |
JP4775102B2 true JP4775102B2 (ja) | 2011-09-21 |
Family
ID=38655161
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2006126432A Expired - Fee Related JP4775102B2 (ja) | 2005-05-09 | 2006-04-28 | 半導体装置の製造方法 |
Country Status (8)
Country | Link |
---|---|
US (1) | US8283674B2 (ja) |
EP (1) | EP2015363B1 (ja) |
JP (1) | JP4775102B2 (ja) |
KR (1) | KR100983852B1 (ja) |
CN (1) | CN101336484B (ja) |
CA (1) | CA2636313A1 (ja) |
TW (1) | TW200742072A (ja) |
WO (1) | WO2007125617A1 (ja) |
Families Citing this family (29)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2008112834A (ja) * | 2006-10-30 | 2008-05-15 | Sumitomo Electric Ind Ltd | 炭化ケイ素半導体装置の製造方法 |
KR20090089362A (ko) | 2006-11-10 | 2009-08-21 | 스미토모덴키고교가부시키가이샤 | 탄화규소 반도체 장치 및 그 제조 방법 |
KR20090091719A (ko) | 2006-11-21 | 2009-08-28 | 스미토모덴키고교가부시키가이샤 | 탄화규소 반도체 장치 및 그 제조 방법 |
US7981709B2 (en) | 2007-04-05 | 2011-07-19 | Sumitomo Electric Industries, Ltd. | Semiconductor device and method for fabricating the same |
JP2008277657A (ja) * | 2007-05-02 | 2008-11-13 | Sumitomo Electric Ind Ltd | 半導体基板およびその製造方法 |
JP5307381B2 (ja) * | 2007-11-12 | 2013-10-02 | Hoya株式会社 | 半導体素子ならびに半導体素子製造法 |
JP2009170457A (ja) * | 2008-01-10 | 2009-07-30 | Sumitomo Electric Ind Ltd | 炭化珪素基板の表面処理方法および半導体装置 |
JP2009177006A (ja) * | 2008-01-25 | 2009-08-06 | Sumitomo Electric Ind Ltd | 半導体装置の製造方法 |
JP5332216B2 (ja) * | 2008-02-04 | 2013-11-06 | 住友電気工業株式会社 | 半導体装置およびその製造方法 |
JP2009200335A (ja) * | 2008-02-22 | 2009-09-03 | Sumitomo Electric Ind Ltd | 基板、エピタキシャル層付基板および半導体装置 |
US8823014B2 (en) * | 2008-06-13 | 2014-09-02 | Kansas State University Research Foundation | Off-axis silicon carbide substrates |
CA2736950A1 (en) * | 2009-03-27 | 2010-09-30 | Sumitomo Electric Industries, Ltd. | Mosfet and method for manufacturing mosfet |
JP5501654B2 (ja) * | 2009-04-24 | 2014-05-28 | 新日鐵住金株式会社 | 炭化珪素単結晶基板、及びその製造方法 |
JP5453899B2 (ja) * | 2009-04-24 | 2014-03-26 | 新日鐵住金株式会社 | 炭化珪素単結晶基板の製造方法、及び炭化珪素単結晶基板 |
TW201104865A (en) * | 2009-05-11 | 2011-02-01 | Sumitomo Electric Industries | Insulating gate type bipolar transistor |
JP5699628B2 (ja) * | 2010-07-26 | 2015-04-15 | 住友電気工業株式会社 | 半導体装置 |
CN102479742A (zh) * | 2010-11-30 | 2012-05-30 | 中国科学院微电子研究所 | 用于集成电路的衬底及其形成方法 |
JP5879770B2 (ja) * | 2011-06-27 | 2016-03-08 | 住友電気工業株式会社 | 半導体装置およびその製造方法 |
JP5694096B2 (ja) | 2011-09-08 | 2015-04-01 | 株式会社東芝 | 炭化珪素半導体装置の製造方法 |
JP5834801B2 (ja) * | 2011-11-16 | 2015-12-24 | 住友電気工業株式会社 | 半導体装置の製造方法および半導体装置 |
JP5853648B2 (ja) * | 2011-11-30 | 2016-02-09 | 住友電気工業株式会社 | 炭化珪素半導体装置の製造方法 |
JP2013131512A (ja) | 2011-12-20 | 2013-07-04 | Sumitomo Electric Ind Ltd | 半導体装置およびその製造方法 |
JP2013145770A (ja) * | 2012-01-13 | 2013-07-25 | Sumitomo Electric Ind Ltd | 半導体装置およびその製造方法 |
JP6070155B2 (ja) | 2012-12-18 | 2017-02-01 | 住友電気工業株式会社 | 炭化珪素半導体装置 |
US9130036B2 (en) * | 2013-04-30 | 2015-09-08 | Panasonic Intellectual Property Management Co., Ltd. | Semiconductor device and method for manufacturing same |
DE102013209256A1 (de) | 2013-05-17 | 2014-11-20 | Robert Bosch Gmbh | Metall-Oxid-Halbleiter-Feldeffekttransistor und Verfahren zur Herstellung eines Metall-Oxid-Halbleiter-Feldeffekttransistors |
CN106233430B (zh) * | 2014-04-18 | 2019-08-06 | 国立研究开发法人产业技术综合研究所 | 碳化硅外延晶片及其制造方法 |
JP6189261B2 (ja) * | 2014-07-07 | 2017-08-30 | 株式会社東芝 | 半導体装置およびその製造方法 |
JP6965499B2 (ja) * | 2016-03-16 | 2021-11-10 | 富士電機株式会社 | 炭化珪素半導体装置および炭化珪素半導体装置の製造方法 |
Family Cites Families (15)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH05347410A (ja) * | 1992-06-16 | 1993-12-27 | Seiko Epson Corp | 半導体装置とその製法 |
US6573534B1 (en) * | 1995-09-06 | 2003-06-03 | Denso Corporation | Silicon carbide semiconductor device |
DE19712561C1 (de) * | 1997-03-25 | 1998-04-30 | Siemens Ag | SiC-Halbleiteranordnung mit hoher Kanalbeweglichkeit |
JP3600406B2 (ja) * | 1997-06-19 | 2004-12-15 | 三菱電機株式会社 | SiC半導体装置とその製造方法 |
KR20000068834A (ko) | 1997-08-27 | 2000-11-25 | 모리시타 요이찌 | 탄화규소기판 및 그 제조방법, 및 탄화규소기판을 사용한 반도체소자 |
JPH1197688A (ja) * | 1997-09-25 | 1999-04-09 | Fujitsu Ltd | 半導体装置の製造方法 |
US6384428B1 (en) * | 1998-03-19 | 2002-05-07 | Hitachi, Ltd. | Silicon carbide semiconductor switching device |
JP2000294777A (ja) * | 1999-04-08 | 2000-10-20 | Mitsubishi Electric Corp | 半導体装置及びその製造方法 |
JP4843854B2 (ja) * | 2001-03-05 | 2011-12-21 | 住友電気工業株式会社 | Mosデバイス |
JP4114390B2 (ja) | 2002-04-23 | 2008-07-09 | 株式会社デンソー | 半導体装置及びその製造方法 |
JP4360085B2 (ja) | 2002-12-25 | 2009-11-11 | 株式会社デンソー | 炭化珪素半導体装置 |
JP2005019951A (ja) * | 2003-06-06 | 2005-01-20 | Japan Science & Technology Agency | SiC半導体装置の製造方法及びSiC半導体装置 |
CN1802752A (zh) | 2003-11-25 | 2006-07-12 | 松下电器产业株式会社 | 半导体元件 |
JP2006013005A (ja) | 2004-06-23 | 2006-01-12 | Denso Corp | 炭化珪素半導体基板およびその製造方法 |
DE102005017814B4 (de) | 2004-04-19 | 2016-08-11 | Denso Corporation | Siliziumkarbid-Halbleiterbauelement und Verfahren zu dessen Herstellung |
-
2006
- 2006-04-28 JP JP2006126432A patent/JP4775102B2/ja not_active Expired - Fee Related
- 2006-10-26 WO PCT/JP2006/321370 patent/WO2007125617A1/ja active Application Filing
- 2006-10-26 CA CA002636313A patent/CA2636313A1/en not_active Abandoned
- 2006-10-26 EP EP06822346A patent/EP2015363B1/en not_active Not-in-force
- 2006-10-26 CN CN2006800519163A patent/CN101336484B/zh not_active Expired - Fee Related
- 2006-10-26 US US12/158,382 patent/US8283674B2/en active Active
- 2006-10-26 KR KR1020087014892A patent/KR100983852B1/ko not_active IP Right Cessation
- 2006-11-09 TW TW095141517A patent/TW200742072A/zh unknown
Also Published As
Publication number | Publication date |
---|---|
US20090230404A1 (en) | 2009-09-17 |
CN101336484A (zh) | 2008-12-31 |
EP2015363B1 (en) | 2011-12-14 |
TW200742072A (en) | 2007-11-01 |
WO2007125617A1 (ja) | 2007-11-08 |
KR100983852B1 (ko) | 2010-09-27 |
CN101336484B (zh) | 2010-05-26 |
EP2015363A4 (en) | 2009-05-27 |
EP2015363A1 (en) | 2009-01-14 |
CA2636313A1 (en) | 2007-11-08 |
KR20080096748A (ko) | 2008-11-03 |
US8283674B2 (en) | 2012-10-09 |
JP2006344942A (ja) | 2006-12-21 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JP4775102B2 (ja) | 半導体装置の製造方法 | |
EP1981076B1 (en) | Method for manufacturing silicon carbide semiconductor device | |
JPWO2008056698A1 (ja) | 炭化珪素半導体装置およびその製造方法 | |
JPWO2008062729A1 (ja) | 炭化珪素半導体装置およびその製造方法 | |
WO2015040966A1 (ja) | 炭化珪素半導体装置および炭化珪素半導体装置の製造方法 | |
US9799515B2 (en) | Silicon carbide semiconductor device and method of manufacturing the same | |
JP2005166930A (ja) | SiC−MISFET及びその製造方法 | |
US8203151B2 (en) | Semiconductor device and method for fabricating the same | |
JP2008004726A (ja) | 半導体素子およびその製造方法 | |
JP4929979B2 (ja) | 半導体装置および半導体装置の製造方法 | |
US9728633B2 (en) | Silicon carbide semiconductor device and method for manufacturing the same | |
WO2014027520A1 (ja) | 炭化珪素半導体装置 | |
JP2011181949A (ja) | 半導体装置の製造方法 | |
JP4410531B2 (ja) | 炭化珪素半導体基板及びその製造方法 | |
JP2009200335A (ja) | 基板、エピタキシャル層付基板および半導体装置 | |
JP5332216B2 (ja) | 半導体装置およびその製造方法 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
A621 | Written request for application examination |
Free format text: JAPANESE INTERMEDIATE CODE: A621 Effective date: 20061120 |
|
A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20101207 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20110126 |
|
A02 | Decision of refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A02 Effective date: 20110215 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20110427 |
|
A911 | Transfer to examiner for re-examination before appeal (zenchi) |
Free format text: JAPANESE INTERMEDIATE CODE: A911 Effective date: 20110510 |
|
TRDD | Decision of grant or rejection written | ||
A01 | Written decision to grant a patent or to grant a registration (utility model) |
Free format text: JAPANESE INTERMEDIATE CODE: A01 Effective date: 20110531 |
|
A01 | Written decision to grant a patent or to grant a registration (utility model) |
Free format text: JAPANESE INTERMEDIATE CODE: A01 |
|
A61 | First payment of annual fees (during grant procedure) |
Free format text: JAPANESE INTERMEDIATE CODE: A61 Effective date: 20110613 |
|
R150 | Certificate of patent or registration of utility model |
Ref document number: 4775102 Country of ref document: JP Free format text: JAPANESE INTERMEDIATE CODE: R150 Free format text: JAPANESE INTERMEDIATE CODE: R150 |
|
FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20140708 Year of fee payment: 3 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
LAPS | Cancellation because of no payment of annual fees |