JP5955452B2 - 半導体装置 - Google Patents
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- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
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Description
まず、実施の形態1にかかる半導体装置の構成を説明する。図1は、本発明の実施の形態1にかかる半導体装置の一部を示す断面図である。なお、本実施の形態では半導体装置としてn型のMOSFETを例にして説明するが、p型のMOSFETであってもよいし、他の絶縁ゲート型の半導体装置であっても構わない。
上述のように、実施の形態1においては、ウェル領域の不純物濃度を調整することにより、各ユニットセルの温度特性を変化させることとしていたが、本発明はこれに限定されるものではない。そこで、実施の形態2として、ウェル領域とゲート酸化膜との界面における界面準位密度を調整することにより、各ユニットセルの温度特性を変化させた半導体装置について説明する。
実施の形態1、2では、ユニットセルごとにチャネル抵抗の温度特性が異なるように、複数通りのウェル領域を形成したが、本実施の形態では、多角形の単一ユニットセル内に複数辺存在するチャネルのうち、チャネル抵抗値が正の温度特性となる辺とチャネル抵抗値が負の温度特性となる辺とが形成されるようにウェル領域を設計し、単一ユニットセル内におけるオン抵抗の温度依存性を緩和する。
Claims (13)
- 半導体基板と、
前記半導体基板の表面に形成され第一の導電型であるドリフト層と、
前記ドリフト層内の表面側に形成され第二の導電型である第一のウェル領域と、
前記ドリフト層内の表面側に形成され第二の導電型である第二のウェル領域と、
前記第一のウェル領域内および前記第二のウェル領域内であって、前記ドリフト層内の表面側に形成され第一の導電型のソース領域と、
前記ソース領域に接して、前記ドリフト層の表面に形成された第一の電極と、
前記半導体基板の裏面に形成された第二の電極と、
前記第一のウェル領域及び前記第二のウェル領域にチャネルを形成するゲート構造とを備え、
前記第一のウェル領域に形成されるチャネルのチャネル抵抗値は温度が上昇するにつれて減少する温度特性であり、前記第二のウェル領域に形成されるチャネルのチャネル抵抗値は温度が上昇するにつれて増加する温度特性である、
ことを特徴とする半導体装置。 - 半導体基板と、
前記半導体基板の表面に形成され第一の導電型であるドリフト層と、
前記ドリフト層内の表面側に形成され第二の導電型である第一のウェル領域と、
前記ドリフト層内の表面側に形成され第二の導電型である第二のウェル領域と、
前記第一のウェル領域内および前記第二のウェル領域内であって、前記ドリフト層内の表面側に形成され第一の導電型のソース領域と、
前記ソース領域に接して、前記ドリフト層の表面に形成された第一の電極と、
前記半導体基板の裏面に形成された第二の電極と、
前記第一のウェル領域及び前記第二のウェル領域にチャネルを形成するゲート構造とを備え、
前記第一の電極と前記第二の電極との間において前記第一のウェル領域のチャネルを介して形成される電流経路の抵抗値は、温度が上昇するにつれて減少する温度特性であり、
前記第一の電極と前記第二の電極との間において前記第二のウェル領域のチャネルを介して形成される電流経路の抵抗値は、温度が上昇するにつれて増加する温度特性である、
ことを特徴とする半導体装置。 - 前記第一のウェル領域および前記第二のウェル領域は、同一のセル内に形成されることを特徴とする請求項1又は2記載の半導体装置。
- 前記第一のウェル領域における第二の導電型の不純物濃度は、前記第二のウェル領域における第二の導電型の不純物濃度よりも高い、
ことを特徴とする請求項1乃至請求項3のいずれか1項に記載の半導体装置。 - 前記第一の導電型はn型であり、
前記第二の導電型はp型であり、
前記ゲート構造は、前記ドリフト層及び前記第一のウェル領域又は前記第二のウェル領域に接して形成されるゲート酸化膜と、前記ゲート酸化膜上に形成されるゲート金属とからなり、
前記第一のウェル領域と前記ゲート酸化膜との界面に存在する界面準位密度及び前記第二のウェル領域と前記ゲート酸化膜との界面に存在する界面準位密度がともに1×1012eV−1cm−2以下であり、
前記第一のウェル領域の前記チャネルが形成された際に導電型が反転し空乏化した領域における実効アクセプタ密度が3.5×1012cm−2以上であり、
前記第二のウェル領域の前記チャネルが形成された際に導電型が反転し空乏化した領域における実効アクセプタ密度が3.5×1012cm−2 未満である、
ことを特徴とする請求項4に記載の半導体装置。 - 前記第一の導電型はn型であり、
前記第二の導電型はp型であり、
前記ゲート構造は、前記ドリフト層及び前記第一のウェル領域又は前記第二のウェル領域に接して形成されるゲート酸化膜と、前記ゲート酸化膜上に形成されるゲート金属とからなり、
前記第一のウェル領域と前記ゲート酸化膜との界面に存在する界面準位密度及び前記第二のウェル領域と前記ゲート酸化膜との界面に存在する界面準位密度がともに1×1012eV−1cm−2以下であり、
前記第一のウェル領域の前記チャネルが形成された際に導電型が反転し空乏化した領域における実効アクセプタ濃度が1.0×1017cm−3以上であり、
前記第二のウェル領域の前記チャネルが形成された際に導電型が反転し空乏化した領域における実効アクセプタ濃度が1.0×1017cm−3 未満である、
ことを特徴とする請求項4に記載の半導体装置。 - 前記ゲート構造は、前記ドリフト層及び前記第一のウェル領域又は前記第二のウェル領域に接して形成されるゲート酸化膜と、前記ゲート酸化膜上に形成されるゲート金属とからなり、
前記ゲート酸化膜と前記第一のウェル領域との界面に存在する界面準位密度は、前記ゲート酸化膜と前記第二のウェル領域との界面に存在する界面準位密度よりも大きい、
ことを特徴とする請求項1乃至請求項3のいずれか1項に記載の半導体装置。 - 前記第一のウェル領域と前記ゲート酸化膜との界面に存在する界面準位密度は1×1012eV−1cm−2以上であり、
前記第二のウェル領域と前記ゲート酸化膜との界面に存在する界面準位密度は1×1012eV−1cm−2 未満である、
ことを特徴とする請求項7に記載の半導体装置。 - 前記第一のウェル領域と前記第二のウェル領域とをそれぞれ複数備え、
前記第一のウェル領域と前記第二のウェル領域との構成比率に応じて、前記第一のウェル領域と前記第二のウェル領域とが交互に配列し形成される、
ことを特徴とする請求項1乃至8のいずれか1項に記載の半導体装置。 - 前記第一のウェル領域と前記第二のウェル領域との構成比率は、前記第一の電極と前記第二の電極との間を電流が流れる際の抵抗値が一定となるように調整されている、
ことを特徴とする請求項9記載の半導体装置。 - 前記半導体基板は炭化珪素基板である、
ことを特徴とする請求項1乃至10のいずれか1項に記載の半導体装置。 - 前記半導体基板は、第一の導電型であることを特徴とする請求項1乃至11のいずれか1項に記載の半導体装置。
- 前記ドリフト層の表面に形成され第二の導電型である第三のウェル領域を備え、
前記ゲート構造は、前記第三のウェル領域においてもチャネルを形成し、
前記第三のウェル領域に形成されるチャネルのチャネル抵抗値は温度が上昇するにつれて増加する温度特性又は減少する温度特性である、
ことを特徴とする請求項1乃至12のいずれか1項に記載の半導体装置。
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