JP6128927B2 - チューナブルバリアを備えたグラフェンスイッチング素子 - Google Patents
チューナブルバリアを備えたグラフェンスイッチング素子 Download PDFInfo
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- JP6128927B2 JP6128927B2 JP2013085518A JP2013085518A JP6128927B2 JP 6128927 B2 JP6128927 B2 JP 6128927B2 JP 2013085518 A JP2013085518 A JP 2013085518A JP 2013085518 A JP2013085518 A JP 2013085518A JP 6128927 B2 JP6128927 B2 JP 6128927B2
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- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 title claims description 180
- 229910021389 graphene Inorganic materials 0.000 title claims description 179
- 230000004888 barrier function Effects 0.000 title claims description 62
- 239000000758 substrate Substances 0.000 claims description 95
- 239000004065 semiconductor Substances 0.000 claims description 72
- 239000002923 metal particle Substances 0.000 claims description 55
- 239000012535 impurity Substances 0.000 claims description 14
- 239000011810 insulating material Substances 0.000 claims description 11
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 9
- 229910052710 silicon Inorganic materials 0.000 claims description 9
- 239000010703 silicon Substances 0.000 claims description 9
- 239000002184 metal Substances 0.000 claims description 7
- 229910052751 metal Inorganic materials 0.000 claims description 7
- 229910000577 Silicon-germanium Inorganic materials 0.000 claims description 5
- LEVVHYCKPQWKOP-UHFFFAOYSA-N [Si].[Ge] Chemical compound [Si].[Ge] LEVVHYCKPQWKOP-UHFFFAOYSA-N 0.000 claims description 5
- 229910052732 germanium Inorganic materials 0.000 claims description 5
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 claims description 5
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims description 5
- 229920005591 polysilicon Polymers 0.000 claims description 5
- 125000003277 amino group Chemical group 0.000 claims description 4
- 125000002887 hydroxy group Chemical group [H]O* 0.000 claims description 4
- 239000011368 organic material Substances 0.000 claims description 3
- GPRLSGONYQIRFK-UHFFFAOYSA-N hydron Chemical compound [H+] GPRLSGONYQIRFK-UHFFFAOYSA-N 0.000 claims 1
- 239000010410 layer Substances 0.000 description 98
- 238000010586 diagram Methods 0.000 description 9
- 239000000463 material Substances 0.000 description 8
- 230000009471 action Effects 0.000 description 7
- 238000005229 chemical vapour deposition Methods 0.000 description 6
- 230000000694 effects Effects 0.000 description 6
- 239000000969 carrier Substances 0.000 description 5
- 238000000034 method Methods 0.000 description 5
- 229910052688 Gadolinium Inorganic materials 0.000 description 4
- 229910052791 calcium Inorganic materials 0.000 description 4
- 230000007423 decrease Effects 0.000 description 4
- 229910052737 gold Inorganic materials 0.000 description 4
- 239000002074 nanoribbon Substances 0.000 description 4
- 229910052763 palladium Inorganic materials 0.000 description 4
- 238000000059 patterning Methods 0.000 description 4
- 229910052697 platinum Inorganic materials 0.000 description 4
- 229910052581 Si3N4 Inorganic materials 0.000 description 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 3
- 230000008859 change Effects 0.000 description 3
- 230000005669 field effect Effects 0.000 description 3
- 238000000926 separation method Methods 0.000 description 3
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 3
- 229910052814 silicon oxide Inorganic materials 0.000 description 3
- 239000002356 single layer Substances 0.000 description 3
- 229910052719 titanium Inorganic materials 0.000 description 3
- 230000005641 tunneling Effects 0.000 description 3
- 229910052727 yttrium Inorganic materials 0.000 description 3
- 229910052739 hydrogen Inorganic materials 0.000 description 2
- 239000001257 hydrogen Substances 0.000 description 2
- -1 hydrogen ions Chemical class 0.000 description 2
- 230000008569 process Effects 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- WYTZZXDRDKSJID-UHFFFAOYSA-N (3-aminopropyl)triethoxysilane Chemical compound CCO[Si](OCC)(OCC)CCCN WYTZZXDRDKSJID-UHFFFAOYSA-N 0.000 description 1
- BKRIEFUMDWSFKX-UHFFFAOYSA-N 4-pyren-1-ylbutan-1-amine Chemical compound C1=C2C(CCCCN)=CC=C(C=C3)C2=C2C3=CC=CC2=C1 BKRIEFUMDWSFKX-UHFFFAOYSA-N 0.000 description 1
- MRENSFROWALQNU-UHFFFAOYSA-N 4-pyren-1-ylbutan-1-ol Chemical compound C1=C2C(CCCCO)=CC=C(C=C3)C2=C2C3=CC=CC2=C1 MRENSFROWALQNU-UHFFFAOYSA-N 0.000 description 1
- CNQAYISXCZTDQX-UHFFFAOYSA-N 7-Hydroxybenzo[a]pyrene Chemical compound C1=C(C2=C34)C=CC3=CC=CC4=CC=C2C2=C1C(O)=CC=C2 CNQAYISXCZTDQX-UHFFFAOYSA-N 0.000 description 1
- UFULAYFCSOUIOV-UHFFFAOYSA-N cysteamine Chemical compound NCCS UFULAYFCSOUIOV-UHFFFAOYSA-N 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 230000001788 irregular Effects 0.000 description 1
- 229960003151 mercaptamine Drugs 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 230000005476 size effect Effects 0.000 description 1
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- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
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- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/10—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode not carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
- H01L29/107—Substrate region of field-effect devices
- H01L29/1075—Substrate region of field-effect devices of field-effect transistors
- H01L29/1079—Substrate region of field-effect devices of field-effect transistors with insulated gate
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- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/775—Field effect transistors with one dimensional charge carrier gas channel, e.g. quantum wire FET
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- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/16—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only elements of Group IV of the Periodic Table
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- H01L29/42312—Gate electrodes for field effect devices
- H01L29/42316—Gate electrodes for field effect devices for field-effect transistors
- H01L29/4232—Gate electrodes for field effect devices for field-effect transistors with insulated gate
- H01L29/42372—Gate electrodes for field effect devices for field-effect transistors with insulated gate characterised by the conducting layer, e.g. the length, the sectional shape or the lay-out
- H01L29/42376—Gate electrodes for field effect devices for field-effect transistors with insulated gate characterised by the conducting layer, e.g. the length, the sectional shape or the lay-out characterised by the length or the sectional shape
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- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/778—Field effect transistors with two-dimensional charge carrier gas channel, e.g. HEMT ; with two-dimensional charge-carrier layer formed at a heterojunction interface
- H01L29/7781—Field effect transistors with two-dimensional charge carrier gas channel, e.g. HEMT ; with two-dimensional charge-carrier layer formed at a heterojunction interface with inverted single heterostructure, i.e. with active layer formed on top of wide bandgap layer, e.g. IHEMT
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- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/778—Field effect transistors with two-dimensional charge carrier gas channel, e.g. HEMT ; with two-dimensional charge-carrier layer formed at a heterojunction interface
- H01L29/7789—Field effect transistors with two-dimensional charge carrier gas channel, e.g. HEMT ; with two-dimensional charge-carrier layer formed at a heterojunction interface the two-dimensional charge carrier gas being at least partially not parallel to a main surface of the semiconductor body
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- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Thin Film Transistor (AREA)
- Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
- Junction Field-Effect Transistors (AREA)
- Insulated Gate Type Field-Effect Transistor (AREA)
Description
110 半導体基板
112 溝
114 絶縁物質
121 第1電極
122 第2電極
130 メタル粒子
140 絶縁層
150 グラフェン層
160 ゲートオキシド
170 ゲート電極
Claims (16)
- 半導体基板上の第1領域及び第2領域にそれぞれ配された第1電極及び絶縁層と、
前記第1領域と前記第2領域との間で、前記半導体基板の表面に形成された複数のメタル粒子と、
前記複数のメタル粒子上から前記絶縁層上に延びたグラフェン層と、
前記第2領域の前記グラフェン層上で前記絶縁層に対向する第2電極と、
前記グラフェン層を覆うゲートオキシドと、
前記ゲートオキシド上のゲート電極と、を備え、
前記半導体基板は、前記グラフェン層と前記第1電極との間にエネルギー障壁を形成する半導体であるチューナブルバリアを備えるグラフェンスイッチング素子。 - 前記基板は、前記複数のメタル粒子に対応して形成された複数の溝と、前記複数の溝を充填した絶縁物質とを備えることを特徴とする請求項1に記載のグラフェンスイッチング素子。
- 前記メタル粒子は、前記絶縁物質に埋め込まれて、その表面が前記グラフェン層と接触することを特徴とする請求項2に記載のグラフェンスイッチング素子。
- 前記メタル粒子は、前記絶縁物質上に配されて、その表面が前記グラフェン層と接触することを特徴とする請求項2に記載のグラフェンスイッチング素子。
- 前記メタル粒子と前記グラフェン層との間に配された有機膜をさらに備えることを特徴とする請求項1から4の何れか一項に記載のグラフェンスイッチング素子。
- 前記有機膜は、アミノ基、水酸基、および水素イオンからなるグループから選択されたいずれか一つを含む有機物で形成されることを特徴とする請求項5に記載のグラフェンスイッチング素子。
- 前記有機膜は、1nm〜3nmの厚さを有することを特徴とする請求項5または6に記載のグラフェンスイッチング素子。
- 前記メタル粒子は、1nm〜10nmのサイズを有することを特徴とする請求項1から7の何れか一項に記載のグラフェンスイッチング素子。
- 前記メタル粒子は、10nm〜30nmの間隔で配されることを特徴とする請求項1から8の何れか一項に記載のグラフェンスイッチング素子。
- 前記半導体基板は、シリコン、ゲルマニウム、シリコン−ゲルマニウム、III−V族半導体、II−VI族半導体、およびMoS2からなるグループから選択された半導体で形成されることを特徴とする請求項1から9の何れか一項に記載のグラフェンスイッチング素子。
- 前記第1電極は、前記グラフェン層と離隔していることを特徴とする請求項1から10の何れか一項に記載のグラフェンスイッチング素子。
- 前記グラフェン層と前記第1電極とのギャップは、1nm〜30nmであることを特徴とする請求項1から11の何れか一項に記載のグラフェンスイッチング素子。
- 前記第1電極及び第2電極は、金属またはポリシリコンで形成されることを特徴とする請求項1から12の何れか一項に記載のグラフェンスイッチング素子。
- 前記スイッチング素子は、前記基板の不純物の極性と同じ極性のユニポーラトランジスタであることを特徴とする請求項1から13の何れか一項に記載のグラフェンスイッチング素子。
- 前記ゲート電極に印加されるゲート電圧によって、前記エネルギー障壁が変わることを特徴とする請求項1から14の何れか一項に記載のグラフェンスイッチング素子。
- 前記グラフェン層は、1層ないし4層のグラフェンで形成されることを特徴とする請求項1から15の何れか一項に記載のグラフェンスイッチング素子。
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KR1020120040415A KR101906972B1 (ko) | 2012-04-18 | 2012-04-18 | 튜너블 배리어를 구비한 그래핀 스위칭 소자 |
KR10-2012-0040415 | 2012-04-18 |
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KR101910579B1 (ko) * | 2012-10-29 | 2018-10-22 | 삼성전자주식회사 | 튜너블 배리어를 구비한 그래핀 스위칭 소자 |
KR102046100B1 (ko) | 2013-02-15 | 2019-11-18 | 삼성전자주식회사 | 그래핀을 전하 트랩층으로 이용한 메모리 소자 및 구동방법 |
KR102172481B1 (ko) * | 2014-01-29 | 2020-11-02 | 한국과학기술원 | 일함수 조절이 가능한 그래핀 배리스터를 포함하는 반도체 소자 |
EP3134919B1 (en) * | 2014-04-24 | 2023-07-19 | University of Florida Research Foundation, Inc. | Tunable barrier transistors for high power electronics |
KR102232756B1 (ko) | 2014-05-19 | 2021-03-26 | 삼성전자주식회사 | 그래핀-반도체 멀티 접합을 갖는 전자소자 및 그 제조방법 |
KR102266615B1 (ko) | 2014-11-17 | 2021-06-21 | 삼성전자주식회사 | 전계 효과 트랜지스터를 포함하는 반도체 소자 및 그 제조 방법 |
KR102335772B1 (ko) | 2015-04-07 | 2021-12-06 | 삼성전자주식회사 | 측면 게이트와 2차원 물질 채널을 포함하는 전자소자와 그 제조방법 |
CN105895704B (zh) * | 2016-05-10 | 2019-05-17 | 中国科学院微电子研究所 | 一种石墨烯场效应晶体管及其制造方法 |
US20220293736A1 (en) * | 2021-03-11 | 2022-09-15 | Taiwan Semiconductor Manufacturing Co., Ltd. | 2D Channel Transistors with Low Contact Resistance |
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WO2010010766A1 (ja) * | 2008-07-25 | 2010-01-28 | 日本電気株式会社 | 電界効果型トランジスタおよび回路装置 |
EP2416365A4 (en) * | 2009-04-01 | 2014-07-30 | Univ Hokkaido Nat Univ Corp | FIELD EFFECT TRANSISTOR |
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US8673703B2 (en) * | 2009-11-17 | 2014-03-18 | International Business Machines Corporation | Fabrication of graphene nanoelectronic devices on SOI structures |
JP2011192667A (ja) * | 2010-03-11 | 2011-09-29 | Toshiba Corp | トランジスタおよびその製造方法 |
JP2011198938A (ja) * | 2010-03-18 | 2011-10-06 | Toshiba Corp | トランジスタ |
JP5513955B2 (ja) * | 2010-03-31 | 2014-06-04 | 株式会社東芝 | 半導体装置およびその製造方法 |
US8344358B2 (en) * | 2010-09-07 | 2013-01-01 | International Business Machines Corporation | Graphene transistor with a self-aligned gate |
KR101920712B1 (ko) * | 2011-08-26 | 2018-11-22 | 삼성전자주식회사 | 튜너블 배리어를 구비한 그래핀 스위칭 소자 |
US8569121B2 (en) * | 2011-11-01 | 2013-10-29 | International Business Machines Corporation | Graphene and nanotube/nanowire transistor with a self-aligned gate structure on transparent substrates and method of making same |
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JP2013222972A (ja) | 2013-10-28 |
KR101906972B1 (ko) | 2018-10-11 |
KR20130117300A (ko) | 2013-10-25 |
US20130277644A1 (en) | 2013-10-24 |
US8742400B2 (en) | 2014-06-03 |
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