JP5982234B2 - グラフェンを含む電界効果トランジスタ - Google Patents
グラフェンを含む電界効果トランジスタ Download PDFInfo
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- JP5982234B2 JP5982234B2 JP2012201265A JP2012201265A JP5982234B2 JP 5982234 B2 JP5982234 B2 JP 5982234B2 JP 2012201265 A JP2012201265 A JP 2012201265A JP 2012201265 A JP2012201265 A JP 2012201265A JP 5982234 B2 JP5982234 B2 JP 5982234B2
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- Prior art keywords
- graphene
- semiconductor
- electrode
- field effect
- effect transistor
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- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 title claims description 84
- 229910021389 graphene Inorganic materials 0.000 title claims description 84
- 230000005669 field effect Effects 0.000 title claims description 15
- 239000004065 semiconductor Substances 0.000 claims description 67
- 239000000758 substrate Substances 0.000 claims description 30
- 239000010410 layer Substances 0.000 claims description 25
- 239000012535 impurity Substances 0.000 claims description 13
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 4
- 229910000577 Silicon-germanium Inorganic materials 0.000 claims description 4
- LEVVHYCKPQWKOP-UHFFFAOYSA-N [Si].[Ge] Chemical compound [Si].[Ge] LEVVHYCKPQWKOP-UHFFFAOYSA-N 0.000 claims description 4
- 229910052732 germanium Inorganic materials 0.000 claims description 4
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 claims description 4
- 229910052710 silicon Inorganic materials 0.000 claims description 4
- 239000010703 silicon Substances 0.000 claims description 4
- 239000002356 single layer Substances 0.000 claims description 4
- 229910052751 metal Inorganic materials 0.000 description 33
- 239000002184 metal Substances 0.000 description 33
- 230000004888 barrier function Effects 0.000 description 17
- 230000007423 decrease Effects 0.000 description 7
- KDLHZDBZIXYQEI-UHFFFAOYSA-N Palladium Chemical compound [Pd] KDLHZDBZIXYQEI-UHFFFAOYSA-N 0.000 description 4
- 238000005229 chemical vapour deposition Methods 0.000 description 4
- 238000010586 diagram Methods 0.000 description 4
- 238000000034 method Methods 0.000 description 3
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- 238000005566 electron beam evaporation Methods 0.000 description 2
- 238000001017 electron-beam sputter deposition Methods 0.000 description 2
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 2
- 229910052737 gold Inorganic materials 0.000 description 2
- 239000010931 gold Substances 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 229910052763 palladium Inorganic materials 0.000 description 2
- 238000000059 patterning Methods 0.000 description 2
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 2
- 230000009467 reduction Effects 0.000 description 2
- 229910052709 silver Inorganic materials 0.000 description 2
- 239000004332 silver Substances 0.000 description 2
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 230000009471 action Effects 0.000 description 1
- 239000000969 carrier Substances 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 239000007772 electrode material Substances 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 239000002074 nanoribbon Substances 0.000 description 1
- 229910052697 platinum Inorganic materials 0.000 description 1
- 230000008569 process Effects 0.000 description 1
- 229910021332 silicide Inorganic materials 0.000 description 1
- FVBUAEGBCNSCDD-UHFFFAOYSA-N silicide(4-) Chemical compound [Si-4] FVBUAEGBCNSCDD-UHFFFAOYSA-N 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
- 230000005476 size effect Effects 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/43—Electrodes ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/45—Ohmic electrodes
- H01L29/456—Ohmic electrodes on silicon
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/16—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only elements of Group IV of the Periodic System
- H01L29/1606—Graphene
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
- H01L29/417—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions carrying the current to be rectified, amplified or switched
- H01L29/41725—Source or drain electrodes for field effect devices
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/43—Electrodes ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/45—Ohmic electrodes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/43—Electrodes ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/45—Ohmic electrodes
- H01L29/452—Ohmic electrodes on AIII-BV compounds
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
Description
110、210 半導体基板
120 グラフェン
130 電極メタル
200 電界効果トランジスタ
221 ソース領域
222 ドレイン領域
231 第1グラフェン
232 第2グラフェン
241 ソース電極
242 ドレイン電極
250 ゲート絶縁層
260 ゲート電極
Claims (5)
- 第1不純物でドーピングされた半導体基板と、
前記基板上で互いに離隔されて配置された第1グラフェン及び第2グラフェンと、
前記第1グラフェン及び第2グラフェン上にそれぞれ形成されたソース電極及びドレイン電極と、
前記基板で、前記第1グラフェン及び第2グラフェンの下部に、それぞれ前記第1不純物と逆極性の第2不純物でドーピングされたソース領域及びドレイン領域と、
前記半導体基板上で、前記ソース電極と前記ドレイン電極との間のゲート絶縁層と、
前記ゲート絶縁層上のゲート電極と、を備えることを特徴とする、電界効果トランジスタ。 - 前記半導体基板が、シリコン、ゲルマニウム、シリコン・ゲルマニウム、III−V族半導体、及びII−VI族半導体を含むグループから選択された一つで形成されることを特徴とする、請求項1に記載の電界効果トランジスタ。
- 前記グラフェンが、単層または二層のグラフェンで形成されることを特徴とする、請求項1に記載の電界効果トランジスタ。
- 前記ソース電極及び前記ドレイン電極が、それぞれ30nm以下の大きさに形成されることを特徴とする、請求項1に記載の電界効果トランジスタ。
- 前記第1グラフェン及び前記第2グラフェンが、前記半導体層と直接的に接触し、前記ソース電極及び前記ドレイン電極が、それぞれ前記第1グラフェン及び前記第2グラフェンと直接的に接触することを特徴とする、請求項1に記載の電界効果トランジスタ。
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1020110095813A KR101830782B1 (ko) | 2011-09-22 | 2011-09-22 | 그래핀을 포함하는 전극 구조체 및 전계효과 트랜지스터 |
KR10-2011-0095813 | 2011-09-22 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2013070051A JP2013070051A (ja) | 2013-04-18 |
JP5982234B2 true JP5982234B2 (ja) | 2016-08-31 |
Family
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Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
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JP2012201265A Active JP5982234B2 (ja) | 2011-09-22 | 2012-09-13 | グラフェンを含む電界効果トランジスタ |
Country Status (4)
Country | Link |
---|---|
US (1) | US8912530B2 (ja) |
JP (1) | JP5982234B2 (ja) |
KR (1) | KR101830782B1 (ja) |
CN (1) | CN103022106B (ja) |
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KR101920724B1 (ko) * | 2012-12-11 | 2018-11-21 | 삼성전자주식회사 | 그래핀을 포함하는 전자 소자 |
KR101850112B1 (ko) | 2012-12-26 | 2018-04-19 | 한화테크윈 주식회사 | 그래핀, 그래핀 제조용 조성물 및 이를 이용한 그래핀의 제조 방법 |
KR102014988B1 (ko) * | 2013-04-05 | 2019-10-21 | 삼성전자주식회사 | 위치 특이적으로 저항이 조절된 그래핀, 카본나노튜브, 풀러렌, 그래파이트, 또는 그 조합물을 제조하는 방법 |
KR102059131B1 (ko) | 2013-04-05 | 2019-12-24 | 삼성전자주식회사 | 그래핀 소자 및 이의 제조 방법 |
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2011
- 2011-09-22 KR KR1020110095813A patent/KR101830782B1/ko active IP Right Grant
-
2012
- 2012-03-27 US US13/431,031 patent/US8912530B2/en active Active
- 2012-09-13 JP JP2012201265A patent/JP5982234B2/ja active Active
- 2012-09-17 CN CN201210344858.0A patent/CN103022106B/zh active Active
Also Published As
Publication number | Publication date |
---|---|
US8912530B2 (en) | 2014-12-16 |
KR101830782B1 (ko) | 2018-04-05 |
JP2013070051A (ja) | 2013-04-18 |
CN103022106B (zh) | 2018-04-20 |
KR20130032105A (ko) | 2013-04-01 |
CN103022106A (zh) | 2013-04-03 |
US20130075700A1 (en) | 2013-03-28 |
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