JP2011198938A - トランジスタ - Google Patents
トランジスタ Download PDFInfo
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- JP2011198938A JP2011198938A JP2010062855A JP2010062855A JP2011198938A JP 2011198938 A JP2011198938 A JP 2011198938A JP 2010062855 A JP2010062855 A JP 2010062855A JP 2010062855 A JP2010062855 A JP 2010062855A JP 2011198938 A JP2011198938 A JP 2011198938A
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- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims abstract description 75
- 229910021389 graphene Inorganic materials 0.000 claims abstract description 74
- 239000004020 conductor Substances 0.000 claims abstract description 17
- 230000004888 barrier function Effects 0.000 claims abstract description 14
- 239000004065 semiconductor Substances 0.000 claims description 37
- 239000000758 substrate Substances 0.000 claims description 12
- 239000002184 metal Substances 0.000 description 20
- 229910004298 SiO 2 Inorganic materials 0.000 description 13
- 238000000034 method Methods 0.000 description 10
- 238000005229 chemical vapour deposition Methods 0.000 description 7
- 239000010410 layer Substances 0.000 description 7
- 238000001020 plasma etching Methods 0.000 description 5
- 238000005530 etching Methods 0.000 description 4
- 239000011810 insulating material Substances 0.000 description 4
- 238000004519 manufacturing process Methods 0.000 description 4
- 238000005452 bending Methods 0.000 description 3
- 238000010586 diagram Methods 0.000 description 3
- 239000012528 membrane Substances 0.000 description 3
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 3
- XMWRBQBLMFGWIX-UHFFFAOYSA-N C60 fullerene Chemical compound C12=C3C(C4=C56)=C7C8=C5C5=C9C%10=C6C6=C4C1=C1C4=C6C6=C%10C%10=C9C9=C%11C5=C8C5=C8C7=C3C3=C7C2=C1C1=C2C4=C6C4=C%10C6=C9C9=C%11C5=C5C8=C3C3=C7C1=C1C2=C4C6=C2C9=C5C3=C12 XMWRBQBLMFGWIX-UHFFFAOYSA-N 0.000 description 2
- 238000000137 annealing Methods 0.000 description 2
- 239000013078 crystal Substances 0.000 description 2
- 229910003472 fullerene Inorganic materials 0.000 description 2
- 238000001459 lithography Methods 0.000 description 2
- 238000005240 physical vapour deposition Methods 0.000 description 2
- 239000002356 single layer Substances 0.000 description 2
- 230000005641 tunneling Effects 0.000 description 2
- 229910004541 SiN Inorganic materials 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 125000004432 carbon atom Chemical group C* 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000000407 epitaxy Methods 0.000 description 1
- 230000001747 exhibiting effect Effects 0.000 description 1
- 230000005669 field effect Effects 0.000 description 1
- 229910002804 graphite Inorganic materials 0.000 description 1
- 239000010439 graphite Substances 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 239000002074 nanoribbon Substances 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 238000000206 photolithography Methods 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
- H01L29/78684—Thin film transistors, i.e. transistors with a channel being at least partly a thin film having a semiconductor body comprising semiconductor materials of Group IV not being silicon, or alloys including an element of the group IV, e.g. Ge, SiN alloys, SiC alloys
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/16—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only elements of Group IV of the Periodic Table
- H01L29/1606—Graphene
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
- H01L29/417—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions carrying the current to be rectified, amplified or switched
- H01L29/41725—Source or drain electrodes for field effect devices
- H01L29/41733—Source or drain electrodes for field effect devices for thin film transistors with insulated gate
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/43—Electrodes ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/45—Ohmic electrodes
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- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/778—Field effect transistors with two-dimensional charge carrier gas channel, e.g. HEMT ; with two-dimensional charge-carrier layer formed at a heterojunction interface
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/7839—Field effect transistors with field effect produced by an insulated gate with Schottky drain or source contact
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- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
- H01L29/417—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions carrying the current to be rectified, amplified or switched
- H01L29/41725—Source or drain electrodes for field effect devices
- H01L29/41775—Source or drain electrodes for field effect devices characterised by the proximity or the relative position of the source or drain electrode and the gate electrode, e.g. the source or drain electrode separated from the gate electrode by side-walls or spreading around or above the gate electrode
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- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Computer Hardware Design (AREA)
- Chemical & Material Sciences (AREA)
- Nanotechnology (AREA)
- Mathematical Physics (AREA)
- Theoretical Computer Science (AREA)
- Crystallography & Structural Chemistry (AREA)
- Thin Film Transistor (AREA)
- Electrodes Of Semiconductors (AREA)
Abstract
【解決手段】本発明の一態様に係るトランジスタは、ゲート電極12下にゲート絶縁膜を介して形成され、ソース側端部10Sを含む半導体領域10aとドレイン側端部10Dを含む導体領域10bとを有し、ソース側端部10Sにおけるチャネル幅方向の幅Laがドレイン側端部10Dにおけるチャネル幅方向の幅Lbよりも小さいグラフェン膜10と、グラフェン膜10のソース側端部10Sに接続され、ショットキーバリア接合を形成するソース電極と、グラフェン膜10のドレイン側端部10Dに接続され、オーミック接合を形成するドレイン電極と、を有する。
【選択図】図2
Description
(トランジスタの構成)
図1は、本発明の実施の形態に係るトランジスタ100の断面図である。トランジスタ100は、ショットキーバリアを通り抜けるトンネル電流をスイッチング動作に利用する。
図8(a)〜(d)は、本発明の実施の形態に係るトランジスタ100の製造工程を示す断面図である。
本発明の実施の形態によれば、金属膜15と半導体領域10aのショットキー接合をスイッチング動作に利用することにより、トランジスタ100は高い電流駆動力と高いカットオフ特性を発揮することができる。
本発明は、上記各実施の形態に限定されず、発明の主旨を逸脱しない範囲内において種々変形実施が可能である。
Claims (5)
- 基板と、
前記基板の上方に形成されたゲート電極と、
前記ゲート電極下にゲート絶縁膜を介して形成され、ソース側端部を含む半導体領域とドレイン側端部を含む導体領域とを有し、前記ソース側端部におけるチャネル幅方向の幅である第1の幅が前記ドレイン側端部におけるチャネル幅方向の幅である第2の幅よりも小さいグラフェン膜と、
前記グラフェン膜の前記ソース側端部に接続され、ショットキーバリア接合を形成するソース電極と、
前記グラフェン膜の前記ドレイン側端部に接続され、オーミック接合を形成するドレイン電極と、
を有するトランジスタ。 - 前記グラフェン膜の前記ソース側端部は、前記ゲート電極のソース側端部の直下、または前記ゲート電極の前記ソース側端部よりもソース側にある、
請求項1に記載のトランジスタ。 - 前記グラフェン膜のチャネル幅方向の幅は、前記グラフェン膜の前記ソース側端部において最小である、
請求項1または2に記載のトランジスタ。 - 前記半導体領域は、0.3eV以上のバンドギャップを有する、
請求項1〜3のいずれか1つに記載のトランジスタ。 - 前記第1の幅は10nmよりも大きく、前記第2の幅は10nm以下である、
請求項1〜4のいずれか1つに記載のトランジスタ。
Priority Applications (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2010062855A JP2011198938A (ja) | 2010-03-18 | 2010-03-18 | トランジスタ |
US13/046,940 US20110227044A1 (en) | 2010-03-18 | 2011-03-14 | Transistor and method for manufacturing the same |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2010062855A JP2011198938A (ja) | 2010-03-18 | 2010-03-18 | トランジスタ |
Publications (1)
Publication Number | Publication Date |
---|---|
JP2011198938A true JP2011198938A (ja) | 2011-10-06 |
Family
ID=44646520
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2010062855A Pending JP2011198938A (ja) | 2010-03-18 | 2010-03-18 | トランジスタ |
Country Status (2)
Country | Link |
---|---|
US (1) | US20110227044A1 (ja) |
JP (1) | JP2011198938A (ja) |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2013222972A (ja) * | 2012-04-18 | 2013-10-28 | Samsung Electronics Co Ltd | チューナブルバリアを備えたグラフェンスイッチング素子 |
JP2015523037A (ja) * | 2012-07-23 | 2015-08-06 | タレス | 無線周波数または高周波信号が一方向に伝わるようにすることができる受動マイクロ電子部品 |
US10283649B2 (en) | 2016-05-31 | 2019-05-07 | Fujitsu Limited | Schottky barrier diode and electronic apparatus |
Families Citing this family (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US10761043B2 (en) * | 2011-07-22 | 2020-09-01 | The Trustees Of The University Of Pennsylvania | Graphene-based nanopore and nanostructure devices and methods for macromolecular analysis |
KR101830782B1 (ko) | 2011-09-22 | 2018-04-05 | 삼성전자주식회사 | 그래핀을 포함하는 전극 구조체 및 전계효과 트랜지스터 |
KR101878743B1 (ko) * | 2012-01-10 | 2018-07-16 | 삼성전자주식회사 | 3차원 그래핀 스위칭 소자 |
KR101952363B1 (ko) | 2012-04-03 | 2019-05-22 | 삼성전자주식회사 | 그래핀 반도체 소자 및 그 제조 방법, 그래핀 반도체 소자를 포함하는 유기 발광 표시 장치 및 기억 소자 |
US8623717B2 (en) * | 2012-06-12 | 2014-01-07 | International Business Machines Corporation | Side-gate defined tunable nanoconstriction in double-gated graphene multilayers |
KR101920724B1 (ko) | 2012-12-11 | 2018-11-21 | 삼성전자주식회사 | 그래핀을 포함하는 전자 소자 |
US8952431B2 (en) * | 2013-05-09 | 2015-02-10 | International Business Machines Corporation | Stacked carbon-based FETs |
WO2015021479A1 (en) * | 2013-08-09 | 2015-02-12 | The Trustees Of Columbia University In The City Of New York | Systems and methods for assembling two-dimensional materials |
Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH027571A (ja) * | 1988-06-27 | 1990-01-11 | Nissan Motor Co Ltd | 半導体装置 |
JPH098300A (ja) * | 1995-04-20 | 1997-01-10 | Toshiba Corp | 半導体装置 |
JP2009043939A (ja) * | 2007-08-09 | 2009-02-26 | Fujitsu Ltd | グラフェンを用いた電子デバイスの製造方法 |
JP2009094190A (ja) * | 2007-10-05 | 2009-04-30 | Fujitsu Ltd | 半導体装置 |
JP2009182173A (ja) * | 2008-01-31 | 2009-08-13 | Fujitsu Ltd | グラフェントランジスタ及び電子機器 |
-
2010
- 2010-03-18 JP JP2010062855A patent/JP2011198938A/ja active Pending
-
2011
- 2011-03-14 US US13/046,940 patent/US20110227044A1/en not_active Abandoned
Patent Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH027571A (ja) * | 1988-06-27 | 1990-01-11 | Nissan Motor Co Ltd | 半導体装置 |
JPH098300A (ja) * | 1995-04-20 | 1997-01-10 | Toshiba Corp | 半導体装置 |
JP2009043939A (ja) * | 2007-08-09 | 2009-02-26 | Fujitsu Ltd | グラフェンを用いた電子デバイスの製造方法 |
JP2009094190A (ja) * | 2007-10-05 | 2009-04-30 | Fujitsu Ltd | 半導体装置 |
JP2009182173A (ja) * | 2008-01-31 | 2009-08-13 | Fujitsu Ltd | グラフェントランジスタ及び電子機器 |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2013222972A (ja) * | 2012-04-18 | 2013-10-28 | Samsung Electronics Co Ltd | チューナブルバリアを備えたグラフェンスイッチング素子 |
JP2015523037A (ja) * | 2012-07-23 | 2015-08-06 | タレス | 無線周波数または高周波信号が一方向に伝わるようにすることができる受動マイクロ電子部品 |
US10283649B2 (en) | 2016-05-31 | 2019-05-07 | Fujitsu Limited | Schottky barrier diode and electronic apparatus |
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Publication number | Publication date |
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US20110227044A1 (en) | 2011-09-22 |
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