JP2009238955A - 半導体基板、半導体装置、および半導体装置の製造方法 - Google Patents
半導体基板、半導体装置、および半導体装置の製造方法 Download PDFInfo
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- 239000004065 semiconductor Substances 0.000 title claims abstract description 207
- 239000000758 substrate Substances 0.000 title claims abstract description 39
- 238000004519 manufacturing process Methods 0.000 title claims description 17
- 150000001875 compounds Chemical class 0.000 claims abstract description 35
- 238000000034 method Methods 0.000 claims abstract description 25
- 230000001590 oxidative effect Effects 0.000 claims abstract description 16
- 229910052785 arsenic Inorganic materials 0.000 claims abstract description 11
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 claims abstract description 11
- 230000005684 electric field Effects 0.000 claims abstract description 4
- 230000003647 oxidation Effects 0.000 claims description 19
- 238000007254 oxidation reaction Methods 0.000 claims description 19
- 229910052782 aluminium Inorganic materials 0.000 claims description 15
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 15
- 238000009279 wet oxidation reaction Methods 0.000 claims description 7
- 238000002360 preparation method Methods 0.000 claims description 2
- 239000010410 layer Substances 0.000 description 197
- 229910052751 metal Inorganic materials 0.000 description 6
- 239000002184 metal Substances 0.000 description 6
- 229910000530 Gallium indium arsenide Inorganic materials 0.000 description 4
- 239000012535 impurity Substances 0.000 description 4
- 238000002488 metal-organic chemical vapour deposition Methods 0.000 description 4
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 2
- 230000008859 change Effects 0.000 description 2
- 239000013078 crystal Substances 0.000 description 2
- 238000009413 insulation Methods 0.000 description 2
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 2
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 2
- 229920005591 polysilicon Polymers 0.000 description 2
- 230000008569 process Effects 0.000 description 2
- 229910021332 silicide Inorganic materials 0.000 description 2
- FVBUAEGBCNSCDD-UHFFFAOYSA-N silicide(4-) Chemical compound [Si-4] FVBUAEGBCNSCDD-UHFFFAOYSA-N 0.000 description 2
- 238000007740 vapor deposition Methods 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 1
- 239000003990 capacitor Substances 0.000 description 1
- 230000005669 field effect Effects 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- 229910052738 indium Inorganic materials 0.000 description 1
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- 239000002346 layers by function Substances 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 125000002524 organometallic group Chemical group 0.000 description 1
- 238000000059 patterning Methods 0.000 description 1
- 229910052697 platinum Inorganic materials 0.000 description 1
- 229910052594 sapphire Inorganic materials 0.000 description 1
- 239000010980 sapphire Substances 0.000 description 1
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Abstract
【解決手段】InPに格子整合または擬格子整合する砒素を含まない3−5族化合物の第1半導体層と、前記第1半導体層に接して形成された、InPに格子整合または擬格子整合する3−5族化合物の半導体層であって、前記第1半導体層に対し選択的に酸化が可能な第2半導体層と、を備えた半導体基板が提供される。また、InPに格子整合または擬格子整合する砒素を含まない3−5族化合物の第1半導体層と、第1半導体層に接して形成された、InPに格子整合または擬格子整合する3−5族化合物の第2半導体層の少なくとも一部を第1半導体層に対し選択的に酸化して形成した酸化層と、第1半導体層に形成されるチャネルに電界を加える制御電極とを備えた半導体装置が提供される。
【選択図】図1
Description
不純物をドープしないInP基板の(100)面上にInAlAsを10nm形成した。その後、InAlAs層を選択的に酸化して絶縁膜を形成した。酸化には525℃の処理温度でのウェット法を用いた。絶縁膜上にアルミニウム電極を蒸着法により形成して実験サンプルとした。
102 基板
104 バッファ層
106 第1半導体層
108 第2半導体層
110 酸化層
112 制御電極
114 オーミック層
116 入出力電極
118 開口領域
120 領域
Claims (16)
- InPに格子整合または擬格子整合し、砒素を含まない3−5族化合物の第1半導体層と、
前記第1半導体層に接して形成され、InPに格子整合または擬格子整合する3−5族化合物の半導体層であって、前記第1半導体層に対し選択的に酸化が可能な第2半導体層と、
を備えた半導体基板。 - 前記第1半導体層は、アルミニウムを含まない、
請求項1に記載の半導体基板。 - 前記第1半導体層に接して形成され、InPに格子整合または擬格子整合し、電子親和力がInPより大きい、3−5族化合物の半導体を備えた、
請求項1に記載の半導体基板。 - 前記第2半導体層は、アルミニウムを含む、
請求項1から請求項3の何れか一項に記載の半導体基板。 - 前記第2半導体層は、InxAl1−xAsであり、
xは、0と1との間の値であること、
を特徴とする請求項4に記載の半導体基板。 - InPに格子整合または擬格子整合し、砒素を含まない3−5族化合物の第1半導体層と、
前記第1半導体層に接して形成され、InPに格子整合または擬格子整合する3−5族化合物の第2半導体層の少なくとも一部を前記第1半導体層に対し選択的に酸化して形成した酸化層と、
前記第1半導体層に形成されるチャネルに電界を加える制御電極と、
を備えた半導体装置。 - 前記酸化層は、前記第1半導体層と前記制御電極との間に形成された制御電極絶縁層、または、前記第1半導体層より基板側に埋め込んで形成された埋め込み酸化層である、
請求項6に記載の半導体装置。 - 前記酸化層と同一の層に、前記第2半導体層の非酸化部が残存し、
前記第2半導体層の前記非酸化部より上層に形成されたオーミック層であって、前記酸化層が形成された部分に開口部を有するオーミック層と、
前記オーミック層より上層に形成された、前記チャネルに流れる電流を供給する一対の入出力電極と、
を備えた請求項6または請求項7に記載の半導体装置。 - 前記制御電極は、前記開口部の内部の前記酸化層の上に形成された、
請求項8に記載の半導体装置。 - 前記オーミック層は、InPに格子整合または擬格子整合する、アルミニウムを含まない3−5族化合物半導体層である、
請求項8または請求項9に記載の半導体装置。 - 前記オーミック層は、p形またはn形にドープされている、
請求項10に記載の半導体装置。 - InPに格子整合または擬格子整合し、砒素を含まない3−5族化合物の第1半導体層と、前記第1半導体層に接して形成され、InPに格子整合または擬格子整合する3−5族化合物の第2半導体層と、を有する半導体基板を準備する基板準備段階と、
前記第2半導体層を前記第1半導体層に対して選択的に酸化して酸化層を形成する酸化段階と、
前記酸化段階で形成した前記酸化層より上層に制御電極を形成する制御電極形成段階と、
を備えた半導体装置の製造方法。 - 前記基板準備段階の後に、前記第2半導体層を覆うオーミック層を形成する段階と、
前記オーミック層に開口部を形成して、前記開口部の底面に前記第2半導体層を露出する段階と、をさらに備え、
前記酸化段階は、前記開口部に露出した前記第2半導体層を酸化して、前記開口部に選択的に前記酸化層を形成する段階である、
請求項12に記載の半導体装置の製造方法。 - 前記酸化段階は、前記オーミック層をマスクとして前記開口部に露出した前記第2半導体層を酸化雰囲気に曝露することにより、前記酸化層を前記マスクに自己整合的に形成する段階である、
請求項13に記載の半導体装置の製造方法。 - 前記オーミック層は、InPに格子整合または擬格子整合する、アルミニウムを含まない3−5族化合物のp形半導体層またはn形半導体層である、
請求項13に記載の半導体装置の製造方法。 - 前記酸化段階は、ウェット酸化法により前記酸化層を形成する段階である、
請求項12から請求項15の何れか一項に記載の半導体装置の製造方法。
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KR1020107019359A KR101523409B1 (ko) | 2008-03-26 | 2009-03-26 | 반도체 기판, 반도체 장치 및 반도체 장치의 제조 방법 |
PCT/JP2009/001375 WO2009119103A1 (ja) | 2008-03-26 | 2009-03-26 | 半導体基板、半導体装置、および半導体装置の製造方法 |
US12/934,233 US8431459B2 (en) | 2008-03-26 | 2009-03-26 | Semiconductor wafer, semiconductor device, and method of manufacturing a semiconductor device |
CN2009801074122A CN101960605A (zh) | 2008-03-26 | 2009-03-26 | 半导体基板、半导体装置、及半导体装置的制造方法 |
TW098110343A TWI449107B (zh) | 2008-03-26 | 2009-03-26 | 半導體裝置,及半導體裝置之製造方法 |
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Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20110018033A1 (en) * | 2008-03-26 | 2011-01-27 | Sumitomo Chemical Company, Limited | Semiconductor wafer, semiconductor device, and method of manufacturing a semiconductor device |
WO2012117745A1 (ja) * | 2011-03-02 | 2012-09-07 | 住友化学株式会社 | 半導体基板及びその製造方法 |
Families Citing this family (16)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR101048987B1 (ko) | 2009-12-10 | 2011-07-12 | 삼성모바일디스플레이주식회사 | 평판 표시 장치 및 그의 제조 방법 |
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GB201212878D0 (en) | 2012-07-20 | 2012-09-05 | Pike Justin | Authentication method and system |
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JP6039591B2 (ja) * | 2014-01-16 | 2016-12-07 | 日本電信電話株式会社 | 酸化アルミニウム薄膜の形成方法 |
US9865688B2 (en) | 2014-03-14 | 2018-01-09 | International Business Machines Corporation | Device isolation using preferential oxidation of the bulk substrate |
GB201520760D0 (en) | 2015-05-27 | 2016-01-06 | Mypinpad Ltd And Licentia Group Ltd | Encoding methods and systems |
US10424670B2 (en) * | 2016-12-30 | 2019-09-24 | Intel Corporation | Display panel with reduced power consumption |
US10431695B2 (en) | 2017-12-20 | 2019-10-01 | Micron Technology, Inc. | Transistors comprising at lease one of GaP, GaN, and GaAs |
US10825816B2 (en) | 2017-12-28 | 2020-11-03 | Micron Technology, Inc. | Recessed access devices and DRAM constructions |
US10319586B1 (en) | 2018-01-02 | 2019-06-11 | Micron Technology, Inc. | Methods comprising an atomic layer deposition sequence |
US10734527B2 (en) | 2018-02-06 | 2020-08-04 | Micron Technology, Inc. | Transistors comprising a pair of source/drain regions having a channel there-between |
US11038027B2 (en) | 2019-03-06 | 2021-06-15 | Micron Technology, Inc. | Integrated assemblies having polycrystalline first semiconductor material adjacent conductively-doped second semiconductor material |
CN116544315B (zh) * | 2023-07-06 | 2023-09-15 | 苏州焜原光电有限公司 | 一种蓝宝石衬底分子束外延红外探测器材料制备方法 |
Family Cites Families (21)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4622114A (en) * | 1984-12-20 | 1986-11-11 | At&T Bell Laboratories | Process of producing devices with photoelectrochemically produced gratings |
US6326650B1 (en) * | 1995-08-03 | 2001-12-04 | Jeremy Allam | Method of forming a semiconductor structure |
US5726462A (en) * | 1996-02-07 | 1998-03-10 | Sandia Corporation | Semiconductor structures having electrically insulating and conducting portions formed from an AlSb-alloy layer |
JP2000349393A (ja) * | 1999-03-26 | 2000-12-15 | Fuji Xerox Co Ltd | 半導体デバイス、面発光型半導体レーザ、及び端面発光型半導体レーザ |
US6493366B1 (en) * | 1999-05-05 | 2002-12-10 | The United States Of America As Represented By The National Security Agency | Vertical cavity surface emitting laser with oxidized strain-compensated superlattice of group III-V semiconductor |
US6407407B1 (en) * | 1999-05-05 | 2002-06-18 | The United States Of America As Represented By The Director Of The National Security Agency | Ridge laser with oxidized strain-compensated superlattice of group III-V semiconductor |
JP2001044417A (ja) * | 1999-07-26 | 2001-02-16 | Fujitsu Ltd | 半導体装置 |
JP2001102691A (ja) * | 1999-10-01 | 2001-04-13 | Nec Corp | 半導体レーザ及び半導体層の酸化方法 |
US6647041B1 (en) * | 2000-05-26 | 2003-11-11 | Finisar Corporation | Electrically pumped vertical optical cavity with improved electrical performance |
US6992319B2 (en) * | 2000-07-18 | 2006-01-31 | Epitaxial Technologies | Ultra-linear multi-channel field effect transistor |
US6610612B2 (en) * | 2000-12-13 | 2003-08-26 | The University Of Maryland | Method of efficient controllable and repeatable wet oxidation in a phosphorous-rich III-V material system |
JP2004031861A (ja) * | 2002-06-28 | 2004-01-29 | Matsushita Electric Ind Co Ltd | 半導体装置 |
JP2004128415A (ja) * | 2002-10-07 | 2004-04-22 | Toshiba Corp | トランジスタ、ウェーハ、トランジスタの製造方法、ウェーハの製造方法および半導体層の形成方法 |
US6831309B2 (en) * | 2002-12-18 | 2004-12-14 | Agilent Technologies, Inc. | Unipolar photodiode having a schottky junction contact |
US20050243889A1 (en) * | 2004-04-30 | 2005-11-03 | Honeywell International Inc. | Digital alloy oxidation layers |
US20050243881A1 (en) * | 2004-04-30 | 2005-11-03 | Hoki Kwon | InAlAs having enhanced oxidation rate grown under very low V/III ratio |
JP2008258563A (ja) * | 2007-03-12 | 2008-10-23 | Sony Corp | 半導体装置の製造方法、半導体装置および電子機器 |
US8329541B2 (en) * | 2007-06-15 | 2012-12-11 | Taiwan Semiconductor Manufacturing Company, Ltd. | InP-based transistor fabrication |
JP5498662B2 (ja) * | 2008-03-26 | 2014-05-21 | 国立大学法人 東京大学 | 半導体装置および半導体装置の製造方法 |
JP5233535B2 (ja) * | 2008-09-11 | 2013-07-10 | 住友電気工業株式会社 | 撮像装置、視界支援装置、暗視装置、航海支援装置および監視装置 |
CN102498542B (zh) * | 2009-09-04 | 2016-05-11 | 住友化学株式会社 | 半导体基板、场效应晶体管、集成电路和半导体基板的制造方法 |
-
2008
- 2008-03-26 JP JP2008082081A patent/JP5498662B2/ja not_active Expired - Fee Related
-
2009
- 2009-03-26 TW TW098110343A patent/TWI449107B/zh not_active IP Right Cessation
- 2009-03-26 CN CN2009801074122A patent/CN101960605A/zh active Pending
- 2009-03-26 WO PCT/JP2009/001375 patent/WO2009119103A1/ja active Application Filing
- 2009-03-26 US US12/934,233 patent/US8431459B2/en not_active Expired - Fee Related
- 2009-03-26 KR KR1020107019359A patent/KR101523409B1/ko not_active IP Right Cessation
Non-Patent Citations (4)
Title |
---|
JPN6009019172; Seong-Ju Bae et al.: 'Characteristics of InAlAs/InP and InAlP/GaAs native oxides' Solid-State Electronics Vol.50, 2006, PP.1625-1628 * |
JPN6009019173; C.M.Hanson et al.: 'InxAl1-xAs/InP Heterojunction Insulated Gate Field Effect Transistors(HIGFET's)' IEEE ELECTRON DEVICE LETTERS VOL.EDL-8, NO.2, 1987, pp.53-54 * |
JPN6009019174; K.Nakamura et al.: 'Depletion/Enhancement Mode InAlAs/InGaAs-MOSHEMTs with nm-Thin Gate Insulating Layers Formed by Oxid' 2004 International Conference on Indium Phoshide and Related Materials Conference Proceedings , 2004, pp.191-194 * |
JPN6009019175; A.Fathimulla et al.: 'A Novel Insulated-Gate InP/InAlAs MODFET' 1993 (5th) International Conference on Indium Phosphide and Related Materials , 199304, pp.428-431 * |
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20110018033A1 (en) * | 2008-03-26 | 2011-01-27 | Sumitomo Chemical Company, Limited | Semiconductor wafer, semiconductor device, and method of manufacturing a semiconductor device |
US8431459B2 (en) * | 2008-03-26 | 2013-04-30 | The University Of Tokyo | Semiconductor wafer, semiconductor device, and method of manufacturing a semiconductor device |
WO2012117745A1 (ja) * | 2011-03-02 | 2012-09-07 | 住友化学株式会社 | 半導体基板及びその製造方法 |
US8901656B2 (en) | 2011-03-02 | 2014-12-02 | Sumitomo Chemical Company, Limited | Semiconductor wafer, field-effect transistor, method of producing semiconductor wafer, and method of producing field-effect transistor |
Also Published As
Publication number | Publication date |
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JP5498662B2 (ja) | 2014-05-21 |
US20110018033A1 (en) | 2011-01-27 |
TWI449107B (zh) | 2014-08-11 |
KR101523409B1 (ko) | 2015-05-27 |
TW200949945A (en) | 2009-12-01 |
WO2009119103A1 (ja) | 2009-10-01 |
US8431459B2 (en) | 2013-04-30 |
KR20100126719A (ko) | 2010-12-02 |
CN101960605A (zh) | 2011-01-26 |
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