JP2020503678A5 - - Google Patents
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- Publication number
- JP2020503678A5 JP2020503678A5 JP2019534191A JP2019534191A JP2020503678A5 JP 2020503678 A5 JP2020503678 A5 JP 2020503678A5 JP 2019534191 A JP2019534191 A JP 2019534191A JP 2019534191 A JP2019534191 A JP 2019534191A JP 2020503678 A5 JP2020503678 A5 JP 2020503678A5
- Authority
- JP
- Japan
- Prior art keywords
- electrode
- semiconductor layer
- light emitting
- emitting structure
- layer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000004065 semiconductor Substances 0.000 claims 35
- 239000002184 metal Substances 0.000 claims 3
- 239000000758 substrate Substances 0.000 claims 2
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| KR10-2016-0177357 | 2016-12-23 | ||
| KR1020160177357A KR20180073866A (ko) | 2016-12-23 | 2016-12-23 | 반도체 소자 |
| PCT/KR2017/015267 WO2018117699A1 (ko) | 2016-12-23 | 2017-12-21 | 반도체 소자 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2020503678A JP2020503678A (ja) | 2020-01-30 |
| JP2020503678A5 true JP2020503678A5 (enExample) | 2021-02-04 |
| JP7002550B2 JP7002550B2 (ja) | 2022-01-20 |
Family
ID=62626866
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2019534191A Active JP7002550B2 (ja) | 2016-12-23 | 2017-12-21 | 半導体素子 |
Country Status (6)
| Country | Link |
|---|---|
| US (1) | US11121286B2 (enExample) |
| EP (1) | EP3561886A4 (enExample) |
| JP (1) | JP7002550B2 (enExample) |
| KR (1) | KR20180073866A (enExample) |
| CN (2) | CN116259643A (enExample) |
| WO (1) | WO2018117699A1 (enExample) |
Families Citing this family (11)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR102450150B1 (ko) | 2018-03-02 | 2022-10-04 | 삼성전자주식회사 | 반도체 발광소자 |
| TWI807850B (zh) * | 2018-07-12 | 2023-07-01 | 晶元光電股份有限公司 | 發光元件 |
| TWI832768B (zh) * | 2018-07-12 | 2024-02-11 | 晶元光電股份有限公司 | 發光元件 |
| TWI770225B (zh) | 2018-07-12 | 2022-07-11 | 晶元光電股份有限公司 | 發光元件 |
| KR102564211B1 (ko) * | 2018-08-31 | 2023-08-07 | 쑤저우 레킨 세미컨덕터 컴퍼니 리미티드 | 반도체 소자 및 이의 제조 방법 |
| JP7312056B2 (ja) * | 2019-01-07 | 2023-07-20 | 日機装株式会社 | 半導体発光素子および半導体発光素子の製造方法 |
| US11387386B2 (en) * | 2019-01-07 | 2022-07-12 | Nikkiso Co., Ltd. | Semiconductor light emitting element and method of manufacturing semiconductor light emitting element |
| JP7339559B2 (ja) * | 2021-05-20 | 2023-09-06 | 日亜化学工業株式会社 | 発光素子 |
| CN116053381B (zh) * | 2021-08-24 | 2025-10-28 | 厦门三安光电有限公司 | 倒装发光二极管及其制备方法 |
| CN113903840B (zh) * | 2021-09-14 | 2022-12-16 | 厦门三安光电有限公司 | 发光二极管及发光模块 |
| JP7575011B2 (ja) * | 2022-08-25 | 2024-10-29 | シャープ株式会社 | Ｌｅｄアレイ |
Family Cites Families (21)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2007517378A (ja) * | 2003-12-24 | 2007-06-28 | 松下電器産業株式会社 | 半導体発光装置、照明モジュール、照明装置、表示素子、および半導体発光装置の製造方法 |
| US7462868B2 (en) * | 2006-02-26 | 2008-12-09 | Formosa Epitaxy Incorporation | Light emitting diode chip with double close-loop electrode design |
| KR101017395B1 (ko) | 2008-12-24 | 2011-02-28 | 서울옵토디바이스주식회사 | 복수개의 발광셀들을 갖는 발광 소자 및 그것을 제조하는 방법 |
| WO2012026695A2 (en) | 2010-08-27 | 2012-03-01 | Seoul Opto Device Co., Ltd. | Light emitting diode with improved luminous efficiency |
| KR101171330B1 (ko) * | 2010-08-27 | 2012-08-10 | 서울옵토디바이스주식회사 | 개선된 발광 효율을 갖는 발광 다이오드 |
| US9070851B2 (en) * | 2010-09-24 | 2015-06-30 | Seoul Semiconductor Co., Ltd. | Wafer-level light emitting diode package and method of fabricating the same |
| KR20130021300A (ko) * | 2011-08-22 | 2013-03-05 | 엘지이노텍 주식회사 | 발광소자, 발광소자 패키지, 및 라이트 유닛 |
| KR101888604B1 (ko) * | 2011-10-28 | 2018-08-14 | 엘지이노텍 주식회사 | 발광 소자 및 발광 소자 패키지 |
| US10388690B2 (en) * | 2012-08-07 | 2019-08-20 | Seoul Viosys Co., Ltd. | Wafer level light-emitting diode array |
| US8946762B2 (en) * | 2012-08-20 | 2015-02-03 | Electronics And Telecommunications Research Institute | Light emitting diode and light emitting diode package |
| CN107768399B (zh) * | 2012-12-21 | 2022-02-18 | 首尔伟傲世有限公司 | 发光二极管 |
| KR101457205B1 (ko) | 2013-02-06 | 2014-10-31 | 서울바이오시스 주식회사 | 서로 이격된 반도체층들을 갖는 발광 소자 및 그것을 제조하는 방법 |
| JP6023660B2 (ja) | 2013-05-30 | 2016-11-09 | スタンレー電気株式会社 | 半導体発光素子及び半導体発光装置 |
| DE102014011893B4 (de) * | 2013-08-16 | 2020-10-01 | Seoul Viosys Co., Ltd. | Leuchtdiode |
| TW201511362A (zh) * | 2013-09-09 | 2015-03-16 | Lextar Electronics Corp | 發光二極體晶片 |
| CN108400214A (zh) | 2013-10-11 | 2018-08-14 | 世迈克琉明有限公司 | 半导体发光元件 |
| KR102162437B1 (ko) | 2014-05-15 | 2020-10-07 | 엘지이노텍 주식회사 | 발광 소자 및 이를 포함하는 발광 소자 패키지 |
| KR20160017905A (ko) | 2014-08-07 | 2016-02-17 | 엘지이노텍 주식회사 | 발광소자 및 조명시스템 |
| CN104300069B (zh) * | 2014-08-25 | 2017-06-16 | 大连德豪光电科技有限公司 | 高压led芯片及其制备方法 |
| US10326050B2 (en) | 2015-02-16 | 2019-06-18 | Seoul Viosys Co., Ltd. | Light-emitting device with improved light extraction efficiency |
| KR102434778B1 (ko) | 2015-03-26 | 2022-08-23 | 쑤저우 레킨 세미컨덕터 컴퍼니 리미티드 | 발광 소자 패키지 |
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2016
- 2016-12-23 KR KR1020160177357A patent/KR20180073866A/ko not_active Ceased
-
2017
- 2017-12-21 WO PCT/KR2017/015267 patent/WO2018117699A1/ko not_active Ceased
- 2017-12-21 US US16/472,429 patent/US11121286B2/en active Active
- 2017-12-21 JP JP2019534191A patent/JP7002550B2/ja active Active
- 2017-12-21 CN CN202310063841.6A patent/CN116259643A/zh active Pending
- 2017-12-21 EP EP17884961.8A patent/EP3561886A4/en not_active Withdrawn
- 2017-12-21 CN CN201780079603.7A patent/CN110114893B/zh active Active