JP7002550B2 - 半導体素子 - Google Patents
半導体素子 Download PDFInfo
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- JP7002550B2 JP7002550B2 JP2019534191A JP2019534191A JP7002550B2 JP 7002550 B2 JP7002550 B2 JP 7002550B2 JP 2019534191 A JP2019534191 A JP 2019534191A JP 2019534191 A JP2019534191 A JP 2019534191A JP 7002550 B2 JP7002550 B2 JP 7002550B2
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- 239000004065 semiconductor Substances 0.000 title claims description 492
- 229910052751 metal Inorganic materials 0.000 claims description 74
- 239000002184 metal Substances 0.000 claims description 74
- 239000000758 substrate Substances 0.000 claims description 37
- 239000010410 layer Substances 0.000 description 458
- 238000000034 method Methods 0.000 description 46
- 238000004519 manufacturing process Methods 0.000 description 24
- 150000001875 compounds Chemical class 0.000 description 13
- 230000008569 process Effects 0.000 description 13
- 230000003287 optical effect Effects 0.000 description 12
- 230000008901 benefit Effects 0.000 description 11
- 238000005530 etching Methods 0.000 description 11
- 239000000126 substance Substances 0.000 description 11
- 239000000463 material Substances 0.000 description 10
- 229910052759 nickel Inorganic materials 0.000 description 7
- 229910052719 titanium Inorganic materials 0.000 description 7
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 description 6
- 229910052804 chromium Inorganic materials 0.000 description 6
- 238000009792 diffusion process Methods 0.000 description 6
- 230000000694 effects Effects 0.000 description 5
- 229910052763 palladium Inorganic materials 0.000 description 5
- 229910052697 platinum Inorganic materials 0.000 description 5
- 229910052709 silver Inorganic materials 0.000 description 5
- 229910052725 zinc Inorganic materials 0.000 description 5
- 239000011701 zinc Substances 0.000 description 5
- 229910002704 AlGaN Inorganic materials 0.000 description 4
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 4
- 229910045601 alloy Inorganic materials 0.000 description 4
- 239000000956 alloy Substances 0.000 description 4
- 230000004888 barrier function Effects 0.000 description 4
- 229910052738 indium Inorganic materials 0.000 description 4
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 4
- 229910052741 iridium Inorganic materials 0.000 description 4
- 239000000203 mixture Substances 0.000 description 4
- 150000004767 nitrides Chemical class 0.000 description 4
- 229910052721 tungsten Inorganic materials 0.000 description 4
- 229910018072 Al 2 O 3 Inorganic materials 0.000 description 3
- 229910000980 Aluminium gallium arsenide Inorganic materials 0.000 description 3
- 229910005540 GaP Inorganic materials 0.000 description 3
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 3
- 229910004298 SiO 2 Inorganic materials 0.000 description 3
- 230000015572 biosynthetic process Effects 0.000 description 3
- 238000004891 communication Methods 0.000 description 3
- JAONJTDQXUSBGG-UHFFFAOYSA-N dialuminum;dizinc;oxygen(2-) Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[Al+3].[Al+3].[Zn+2].[Zn+2] JAONJTDQXUSBGG-UHFFFAOYSA-N 0.000 description 3
- 229910052733 gallium Inorganic materials 0.000 description 3
- 229910052737 gold Inorganic materials 0.000 description 3
- VRIVJOXICYMTAG-IYEMJOQQSA-L iron(ii) gluconate Chemical compound [Fe+2].OC[C@@H](O)[C@@H](O)[C@H](O)[C@@H](O)C([O-])=O.OC[C@@H](O)[C@@H](O)[C@H](O)[C@@H](O)C([O-])=O VRIVJOXICYMTAG-IYEMJOQQSA-L 0.000 description 3
- 238000002955 isolation Methods 0.000 description 3
- 238000012986 modification Methods 0.000 description 3
- 230000004048 modification Effects 0.000 description 3
- 230000001954 sterilising effect Effects 0.000 description 3
- 238000004659 sterilization and disinfection Methods 0.000 description 3
- 239000011787 zinc oxide Substances 0.000 description 3
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- 229910019897 RuOx Inorganic materials 0.000 description 2
- 239000012790 adhesive layer Substances 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- 230000000903 blocking effect Effects 0.000 description 2
- 230000008859 change Effects 0.000 description 2
- 229910052802 copper Inorganic materials 0.000 description 2
- 238000001723 curing Methods 0.000 description 2
- 239000002019 doping agent Substances 0.000 description 2
- 230000007613 environmental effect Effects 0.000 description 2
- 238000000605 extraction Methods 0.000 description 2
- 239000011810 insulating material Substances 0.000 description 2
- 238000001259 photo etching Methods 0.000 description 2
- 238000000746 purification Methods 0.000 description 2
- 238000011160 research Methods 0.000 description 2
- 230000004044 response Effects 0.000 description 2
- 229910052594 sapphire Inorganic materials 0.000 description 2
- 239000010980 sapphire Substances 0.000 description 2
- 238000000926 separation method Methods 0.000 description 2
- SKRWFPLZQAAQSU-UHFFFAOYSA-N stibanylidynetin;hydrate Chemical compound O.[Sn].[Sb] SKRWFPLZQAAQSU-UHFFFAOYSA-N 0.000 description 2
- 229910002601 GaN Inorganic materials 0.000 description 1
- 240000007594 Oryza sativa Species 0.000 description 1
- 235000007164 Oryza sativa Nutrition 0.000 description 1
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
- 229910010413 TiO 2 Inorganic materials 0.000 description 1
- 229910008599 TiW Inorganic materials 0.000 description 1
- 238000003848 UV Light-Curing Methods 0.000 description 1
- 238000004887 air purification Methods 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 229910052785 arsenic Inorganic materials 0.000 description 1
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 description 1
- 229910052788 barium Inorganic materials 0.000 description 1
- 230000008033 biological extinction Effects 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 229910052791 calcium Inorganic materials 0.000 description 1
- 239000003086 colorant Substances 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 239000006185 dispersion Substances 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 239000010408 film Substances 0.000 description 1
- -1 for example Substances 0.000 description 1
- YZZNJYQZJKSEER-UHFFFAOYSA-N gallium tin Chemical compound [Ga].[Sn] YZZNJYQZJKSEER-UHFFFAOYSA-N 0.000 description 1
- 239000007789 gas Substances 0.000 description 1
- 229910052732 germanium Inorganic materials 0.000 description 1
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 description 1
- HRHKULZDDYWVBE-UHFFFAOYSA-N indium;oxozinc;tin Chemical compound [In].[Sn].[Zn]=O HRHKULZDDYWVBE-UHFFFAOYSA-N 0.000 description 1
- 238000010030 laminating Methods 0.000 description 1
- 239000004973 liquid crystal related substance Substances 0.000 description 1
- 229910052749 magnesium Inorganic materials 0.000 description 1
- 239000012528 membrane Substances 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 229910003465 moissanite Inorganic materials 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 230000000149 penetrating effect Effects 0.000 description 1
- 230000000737 periodic effect Effects 0.000 description 1
- 229910052698 phosphorus Inorganic materials 0.000 description 1
- 239000011574 phosphorus Substances 0.000 description 1
- 230000001699 photocatalysis Effects 0.000 description 1
- 238000007639 printing Methods 0.000 description 1
- 229910052703 rhodium Inorganic materials 0.000 description 1
- 235000009566 rice Nutrition 0.000 description 1
- 229910052711 selenium Inorganic materials 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 229910010271 silicon carbide Inorganic materials 0.000 description 1
- 229910000679 solder Inorganic materials 0.000 description 1
- 230000007480 spreading Effects 0.000 description 1
- 238000003892 spreading Methods 0.000 description 1
- 229910052712 strontium Inorganic materials 0.000 description 1
- 229910052714 tellurium Inorganic materials 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
- 229910052718 tin Inorganic materials 0.000 description 1
- 229910001887 tin oxide Inorganic materials 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
- YVTHLONGBIQYBO-UHFFFAOYSA-N zinc indium(3+) oxygen(2-) Chemical compound [O--].[Zn++].[In+3] YVTHLONGBIQYBO-UHFFFAOYSA-N 0.000 description 1
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- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
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- H01L27/153—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components having potential barriers, specially adapted for light emission in a repetitive configuration, e.g. LED bars
- H01L27/156—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components having potential barriers, specially adapted for light emission in a repetitive configuration, e.g. LED bars two-dimensional arrays
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- H01L33/62—Arrangements for conducting electric current to or from the semiconductor body, e.g. lead-frames, wire-bonds or solder balls
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- H01L2924/11—Device type
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- H01L33/38—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes with a particular shape
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- Condensed Matter Physics & Semiconductors (AREA)
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Description
Claims (5)
- 基板と、
前記基板の上に配置され、第1導電型の第1半導体層、前記第1半導体層の上に配置された第1活性層、前記第1活性層の上に配置された第2導電型の第2半導体層を含み、前記第2半導体層と前記第1活性層を貫通して前記第1半導体層を露出させる第1貫通孔を提供する第1発光構造物と、
前記基板の上に前記第1発光構造物と離隔して配置され、第1導電型の第3半導体層、前記第3半導体層の上に配置された第2活性層、前記第2活性層の上に配置された第2導電型の第4半導体層を含む第2発光構造物と、
前記第1発光構造物の前記第2半導体層の上に配置された第1反射電極と、
前記第2発光構造物の前記第4半導体層の上に配置された第2反射電極と、
前記第1発光構造物の前記第2半導体層と前記第2発光構造物の前記第3半導体層に電気的に連結された連結電極と、
前記第1発光構造物及び前記第1反射電極の上に配置され、前記第1半導体層に電気的に連結され垂直方向に重なった第1電極パッドと、
前記第2発光構造物及び前記第1反射電極の上に配置され、前記第4半導体層に電気的に連結され垂直方向に重なった第2電極パッドと、
前記第1貫通孔内に配置され、前記第1半導体層と前記第1電極パッドとの間に配置された第1金属層と、
を含み、
前記第1電極パッドは、前記第1金属層を介して前記第1半導体層に電気的に連結され、
前記第1電極パッド、前記第1金属層、前記第1半導体層、前記第2半導体層、前記第1反射電極、前記連結電極、前記第3半導体層、前記第4半導体層、前記第2電極パッドが電気的に直列連結された、半導体素子。 - 前記連結電極は、前記第3半導体層の上部面と前記第1反射電極の上部面に接触し、
前記連結電極は、対向する前記第1発光構造物の側面と前記第2発光構造物の側面との間に配置された、請求項1に記載の半導体素子。 - 前記連結電極は、メイン電極、前記メイン電極に接触して連結された第1分岐電極、前記第1分岐電極の一端から延長された第2分岐電極、前記第1分岐電極の他端から延長された第3分岐電極を含み、
前記メイン電極の第1領域は、前記第2半導体層の上に配置され、
前記メイン電極の第2領域は、前記第1発光構造物の前記第1半導体層の側面と前記第2発光構造物の前記第3半導体層の側面との間に配置され、
前記第1分岐電極、前記第2分岐電極、前記第3分岐電極は、前記第3半導体層の上面に接触して配置された、請求項1または2に記載の半導体素子。 - 前記第3半導体層の上部面を露出させるコンタクト領域を提供する第1絶縁層をさらに含み、
前記コンタクト領域を介して、前記第1分岐電極、前記第2分岐電極、前記第3分岐電極と前記第3半導体層が電気的に連結された、請求項3に記載の半導体素子。 - 前記第3半導体層の上に配置され、前記第2分岐電極と前記第3分岐電極を連結する第4分岐電極をさらに含み、
前記第1分岐電極、前記第2分岐電極、前記第3分岐電極、前記第4分岐電極は、前記第2発光構造物の周りに配置され、前記第3半導体層の前記上面に配置されて閉ループを提供する、請求項4に記載の半導体素子。
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR10-2016-0177357 | 2016-12-23 | ||
KR1020160177357A KR20180073866A (ko) | 2016-12-23 | 2016-12-23 | 반도체 소자 |
PCT/KR2017/015267 WO2018117699A1 (ko) | 2016-12-23 | 2017-12-21 | 반도체 소자 |
Publications (3)
Publication Number | Publication Date |
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JP2020503678A JP2020503678A (ja) | 2020-01-30 |
JP2020503678A5 JP2020503678A5 (ja) | 2021-02-04 |
JP7002550B2 true JP7002550B2 (ja) | 2022-01-20 |
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JP2019534191A Active JP7002550B2 (ja) | 2016-12-23 | 2017-12-21 | 半導体素子 |
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US (1) | US11121286B2 (ja) |
EP (1) | EP3561886A4 (ja) |
JP (1) | JP7002550B2 (ja) |
KR (1) | KR20180073866A (ja) |
CN (2) | CN110114893B (ja) |
WO (1) | WO2018117699A1 (ja) |
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KR102450150B1 (ko) | 2018-03-02 | 2022-10-04 | 삼성전자주식회사 | 반도체 발광소자 |
TWI832768B (zh) * | 2018-07-12 | 2024-02-11 | 晶元光電股份有限公司 | 發光元件 |
TWI807850B (zh) * | 2018-07-12 | 2023-07-01 | 晶元光電股份有限公司 | 發光元件 |
TWI770225B (zh) * | 2018-07-12 | 2022-07-11 | 晶元光電股份有限公司 | 發光元件 |
KR102564211B1 (ko) * | 2018-08-31 | 2023-08-07 | 쑤저우 레킨 세미컨덕터 컴퍼니 리미티드 | 반도체 소자 및 이의 제조 방법 |
US11387386B2 (en) * | 2019-01-07 | 2022-07-12 | Nikkiso Co., Ltd. | Semiconductor light emitting element and method of manufacturing semiconductor light emitting element |
JP7312056B2 (ja) * | 2019-01-07 | 2023-07-20 | 日機装株式会社 | 半導体発光素子および半導体発光素子の製造方法 |
JP7339559B2 (ja) | 2021-05-20 | 2023-09-06 | 日亜化学工業株式会社 | 発光素子 |
CN113707782B (zh) * | 2021-08-24 | 2023-02-17 | 厦门三安光电有限公司 | 倒装发光二极管及其制备方法 |
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CN116259643A (zh) | 2023-06-13 |
EP3561886A1 (en) | 2019-10-30 |
WO2018117699A1 (ko) | 2018-06-28 |
JP2020503678A (ja) | 2020-01-30 |
CN110114893B (zh) | 2023-02-03 |
EP3561886A4 (en) | 2020-09-02 |
CN110114893A (zh) | 2019-08-09 |
US20200194628A1 (en) | 2020-06-18 |
US11121286B2 (en) | 2021-09-14 |
KR20180073866A (ko) | 2018-07-03 |
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