JP7002550B2 - 半導体素子 - Google Patents
半導体素子 Download PDFInfo
- Publication number
- JP7002550B2 JP7002550B2 JP2019534191A JP2019534191A JP7002550B2 JP 7002550 B2 JP7002550 B2 JP 7002550B2 JP 2019534191 A JP2019534191 A JP 2019534191A JP 2019534191 A JP2019534191 A JP 2019534191A JP 7002550 B2 JP7002550 B2 JP 7002550B2
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- electrode
- semiconductor layer
- light emitting
- layer
- emitting structure
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- 239000004065 semiconductor Substances 0.000 title claims description 492
- 229910052751 metal Inorganic materials 0.000 claims description 74
- 239000002184 metal Substances 0.000 claims description 74
- 239000000758 substrate Substances 0.000 claims description 37
- 239000010410 layer Substances 0.000 description 458
- 238000000034 method Methods 0.000 description 46
- 238000004519 manufacturing process Methods 0.000 description 24
- 150000001875 compounds Chemical class 0.000 description 13
- 230000008569 process Effects 0.000 description 13
- 230000003287 optical effect Effects 0.000 description 12
- 230000008901 benefit Effects 0.000 description 11
- 238000005530 etching Methods 0.000 description 11
- 239000000126 substance Substances 0.000 description 11
- 239000000463 material Substances 0.000 description 10
- 229910052759 nickel Inorganic materials 0.000 description 7
- 229910052719 titanium Inorganic materials 0.000 description 7
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 description 6
- 229910052804 chromium Inorganic materials 0.000 description 6
- 238000009792 diffusion process Methods 0.000 description 6
- 230000000694 effects Effects 0.000 description 5
- 229910052763 palladium Inorganic materials 0.000 description 5
- 229910052697 platinum Inorganic materials 0.000 description 5
- 229910052709 silver Inorganic materials 0.000 description 5
- 229910052725 zinc Inorganic materials 0.000 description 5
- 239000011701 zinc Substances 0.000 description 5
- 229910002704 AlGaN Inorganic materials 0.000 description 4
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 4
- 229910045601 alloy Inorganic materials 0.000 description 4
- 239000000956 alloy Substances 0.000 description 4
- 230000004888 barrier function Effects 0.000 description 4
- 229910052738 indium Inorganic materials 0.000 description 4
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 4
- 229910052741 iridium Inorganic materials 0.000 description 4
- 239000000203 mixture Substances 0.000 description 4
- 150000004767 nitrides Chemical class 0.000 description 4
- 229910052721 tungsten Inorganic materials 0.000 description 4
- 229910018072 Al 2 O 3 Inorganic materials 0.000 description 3
- 229910000980 Aluminium gallium arsenide Inorganic materials 0.000 description 3
- 229910005540 GaP Inorganic materials 0.000 description 3
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 3
- 229910004298 SiO 2 Inorganic materials 0.000 description 3
- 230000015572 biosynthetic process Effects 0.000 description 3
- 238000004891 communication Methods 0.000 description 3
- JAONJTDQXUSBGG-UHFFFAOYSA-N dialuminum;dizinc;oxygen(2-) Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[Al+3].[Al+3].[Zn+2].[Zn+2] JAONJTDQXUSBGG-UHFFFAOYSA-N 0.000 description 3
- 229910052733 gallium Inorganic materials 0.000 description 3
- 229910052737 gold Inorganic materials 0.000 description 3
- VRIVJOXICYMTAG-IYEMJOQQSA-L iron(ii) gluconate Chemical compound [Fe+2].OC[C@@H](O)[C@@H](O)[C@H](O)[C@@H](O)C([O-])=O.OC[C@@H](O)[C@@H](O)[C@H](O)[C@@H](O)C([O-])=O VRIVJOXICYMTAG-IYEMJOQQSA-L 0.000 description 3
- 238000002955 isolation Methods 0.000 description 3
- 238000012986 modification Methods 0.000 description 3
- 230000004048 modification Effects 0.000 description 3
- 230000001954 sterilising effect Effects 0.000 description 3
- 238000004659 sterilization and disinfection Methods 0.000 description 3
- 239000011787 zinc oxide Substances 0.000 description 3
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- 229910019897 RuOx Inorganic materials 0.000 description 2
- 239000012790 adhesive layer Substances 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- 230000000903 blocking effect Effects 0.000 description 2
- 230000008859 change Effects 0.000 description 2
- 229910052802 copper Inorganic materials 0.000 description 2
- 238000001723 curing Methods 0.000 description 2
- 239000002019 doping agent Substances 0.000 description 2
- 230000007613 environmental effect Effects 0.000 description 2
- 238000000605 extraction Methods 0.000 description 2
- 239000011810 insulating material Substances 0.000 description 2
- 238000001259 photo etching Methods 0.000 description 2
- 238000000746 purification Methods 0.000 description 2
- 238000011160 research Methods 0.000 description 2
- 230000004044 response Effects 0.000 description 2
- 229910052594 sapphire Inorganic materials 0.000 description 2
- 239000010980 sapphire Substances 0.000 description 2
- 238000000926 separation method Methods 0.000 description 2
- SKRWFPLZQAAQSU-UHFFFAOYSA-N stibanylidynetin;hydrate Chemical compound O.[Sn].[Sb] SKRWFPLZQAAQSU-UHFFFAOYSA-N 0.000 description 2
- 229910002601 GaN Inorganic materials 0.000 description 1
- 240000007594 Oryza sativa Species 0.000 description 1
- 235000007164 Oryza sativa Nutrition 0.000 description 1
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
- 229910010413 TiO 2 Inorganic materials 0.000 description 1
- 229910008599 TiW Inorganic materials 0.000 description 1
- 238000003848 UV Light-Curing Methods 0.000 description 1
- 238000004887 air purification Methods 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 229910052785 arsenic Inorganic materials 0.000 description 1
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 description 1
- 229910052788 barium Inorganic materials 0.000 description 1
- 230000008033 biological extinction Effects 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 229910052791 calcium Inorganic materials 0.000 description 1
- 239000003086 colorant Substances 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 239000006185 dispersion Substances 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 239000010408 film Substances 0.000 description 1
- -1 for example Substances 0.000 description 1
- YZZNJYQZJKSEER-UHFFFAOYSA-N gallium tin Chemical compound [Ga].[Sn] YZZNJYQZJKSEER-UHFFFAOYSA-N 0.000 description 1
- 239000007789 gas Substances 0.000 description 1
- 229910052732 germanium Inorganic materials 0.000 description 1
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 description 1
- HRHKULZDDYWVBE-UHFFFAOYSA-N indium;oxozinc;tin Chemical compound [In].[Sn].[Zn]=O HRHKULZDDYWVBE-UHFFFAOYSA-N 0.000 description 1
- 238000010030 laminating Methods 0.000 description 1
- 239000004973 liquid crystal related substance Substances 0.000 description 1
- 229910052749 magnesium Inorganic materials 0.000 description 1
- 239000012528 membrane Substances 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 229910003465 moissanite Inorganic materials 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 230000000149 penetrating effect Effects 0.000 description 1
- 230000000737 periodic effect Effects 0.000 description 1
- 229910052698 phosphorus Inorganic materials 0.000 description 1
- 239000011574 phosphorus Substances 0.000 description 1
- 230000001699 photocatalysis Effects 0.000 description 1
- 238000007639 printing Methods 0.000 description 1
- 229910052703 rhodium Inorganic materials 0.000 description 1
- 235000009566 rice Nutrition 0.000 description 1
- 229910052711 selenium Inorganic materials 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 229910010271 silicon carbide Inorganic materials 0.000 description 1
- 229910000679 solder Inorganic materials 0.000 description 1
- 230000007480 spreading Effects 0.000 description 1
- 238000003892 spreading Methods 0.000 description 1
- 229910052712 strontium Inorganic materials 0.000 description 1
- 229910052714 tellurium Inorganic materials 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
- 229910052718 tin Inorganic materials 0.000 description 1
- 229910001887 tin oxide Inorganic materials 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
- YVTHLONGBIQYBO-UHFFFAOYSA-N zinc indium(3+) oxygen(2-) Chemical compound [O--].[Zn++].[In+3] YVTHLONGBIQYBO-UHFFFAOYSA-N 0.000 description 1
Images
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
- H10H29/00—Integrated devices, or assemblies of multiple devices, comprising at least one light-emitting semiconductor element covered by group H10H20/00
- H10H29/10—Integrated devices comprising at least one light-emitting semiconductor component covered by group H10H20/00
- H10H29/14—Integrated devices comprising at least one light-emitting semiconductor component covered by group H10H20/00 comprising multiple light-emitting semiconductor components
- H10H29/142—Two-dimensional arrangements, e.g. asymmetric LED layout
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
- H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
- H10H20/80—Constructional details
- H10H20/85—Packages
- H10H20/857—Interconnections, e.g. lead-frames, bond wires or solder balls
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
- H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
- H10H20/01—Manufacture or treatment
- H10H20/032—Manufacture or treatment of electrodes
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
- H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
- H10H20/01—Manufacture or treatment
- H10H20/036—Manufacture or treatment of packages
- H10H20/0364—Manufacture or treatment of packages of interconnections
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
- H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
- H10H20/80—Constructional details
- H10H20/81—Bodies
- H10H20/822—Materials of the light-emitting regions
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
- H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
- H10H20/80—Constructional details
- H10H20/83—Electrodes
- H10H20/831—Electrodes characterised by their shape
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
- H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
- H10H20/80—Constructional details
- H10H20/83—Electrodes
- H10H20/832—Electrodes characterised by their material
- H10H20/835—Reflective materials
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
- H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
- H10H20/80—Constructional details
- H10H20/84—Coatings, e.g. passivation layers or antireflective coatings
- H10H20/841—Reflective coatings, e.g. dielectric Bragg reflectors
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
- H10H29/00—Integrated devices, or assemblies of multiple devices, comprising at least one light-emitting semiconductor element covered by group H10H20/00
- H10H29/10—Integrated devices comprising at least one light-emitting semiconductor component covered by group H10H20/00
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/11—Device type
- H01L2924/12—Passive devices, e.g. 2 terminal devices
- H01L2924/1204—Optical Diode
- H01L2924/12041—LED
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
- H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
- H10H20/01—Manufacture or treatment
- H10H20/034—Manufacture or treatment of coatings
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
- H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
- H10H20/80—Constructional details
- H10H20/81—Bodies
- H10H20/819—Bodies characterised by their shape, e.g. curved or truncated substrates
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
- H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
- H10H20/80—Constructional details
- H10H20/81—Bodies
- H10H20/819—Bodies characterised by their shape, e.g. curved or truncated substrates
- H10H20/82—Roughened surfaces, e.g. at the interface between epitaxial layers
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
- H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
- H10H20/80—Constructional details
- H10H20/83—Electrodes
- H10H20/831—Electrodes characterised by their shape
- H10H20/8314—Electrodes characterised by their shape extending at least partially onto an outer side surface of the bodies
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- Led Devices (AREA)
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| KR10-2016-0177357 | 2016-12-23 | ||
| KR1020160177357A KR20180073866A (ko) | 2016-12-23 | 2016-12-23 | 반도체 소자 |
| PCT/KR2017/015267 WO2018117699A1 (ko) | 2016-12-23 | 2017-12-21 | 반도체 소자 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2020503678A JP2020503678A (ja) | 2020-01-30 |
| JP2020503678A5 JP2020503678A5 (enExample) | 2021-02-04 |
| JP7002550B2 true JP7002550B2 (ja) | 2022-01-20 |
Family
ID=62626866
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2019534191A Active JP7002550B2 (ja) | 2016-12-23 | 2017-12-21 | 半導体素子 |
Country Status (6)
| Country | Link |
|---|---|
| US (1) | US11121286B2 (enExample) |
| EP (1) | EP3561886A4 (enExample) |
| JP (1) | JP7002550B2 (enExample) |
| KR (1) | KR20180073866A (enExample) |
| CN (2) | CN116259643A (enExample) |
| WO (1) | WO2018117699A1 (enExample) |
Families Citing this family (11)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR102450150B1 (ko) * | 2018-03-02 | 2022-10-04 | 삼성전자주식회사 | 반도체 발광소자 |
| TWI832768B (zh) * | 2018-07-12 | 2024-02-11 | 晶元光電股份有限公司 | 發光元件 |
| TWI807850B (zh) * | 2018-07-12 | 2023-07-01 | 晶元光電股份有限公司 | 發光元件 |
| TWI770225B (zh) | 2018-07-12 | 2022-07-11 | 晶元光電股份有限公司 | 發光元件 |
| KR102564211B1 (ko) * | 2018-08-31 | 2023-08-07 | 쑤저우 레킨 세미컨덕터 컴퍼니 리미티드 | 반도체 소자 및 이의 제조 방법 |
| US11387386B2 (en) * | 2019-01-07 | 2022-07-12 | Nikkiso Co., Ltd. | Semiconductor light emitting element and method of manufacturing semiconductor light emitting element |
| JP7312056B2 (ja) * | 2019-01-07 | 2023-07-20 | 日機装株式会社 | 半導体発光素子および半導体発光素子の製造方法 |
| JP7339559B2 (ja) * | 2021-05-20 | 2023-09-06 | 日亜化学工業株式会社 | 発光素子 |
| CN113707782B (zh) * | 2021-08-24 | 2023-02-17 | 厦门三安光电有限公司 | 倒装发光二极管及其制备方法 |
| CN113903840B (zh) * | 2021-09-14 | 2022-12-16 | 厦门三安光电有限公司 | 发光二极管及发光模块 |
| JP7575011B2 (ja) * | 2022-08-25 | 2024-10-29 | シャープ株式会社 | Ｌｅｄアレイ |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2015220456A (ja) | 2014-05-15 | 2015-12-07 | エルジー イノテック カンパニー リミテッド | 発光素子及びそれを含む照明装置 |
| US20160260869A1 (en) | 2013-10-11 | 2016-09-08 | Semicon Light Co., Ltd. | Semiconductor light emitting device |
| US20180040767A1 (en) | 2015-02-16 | 2018-02-08 | Seoul Viosys Co., Ltd. | Light-emitting device with improved light extraction efficiency |
Family Cites Families (18)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2005062389A2 (en) | 2003-12-24 | 2005-07-07 | Matsushita Electric Industrial Co., Ltd. | Semiconductor light emitting device, lighting module, lighting apparatus, display element, and manufacturing method for semiconductor light emitting device |
| US7462868B2 (en) * | 2006-02-26 | 2008-12-09 | Formosa Epitaxy Incorporation | Light emitting diode chip with double close-loop electrode design |
| KR101017395B1 (ko) | 2008-12-24 | 2011-02-28 | 서울옵토디바이스주식회사 | 복수개의 발광셀들을 갖는 발광 소자 및 그것을 제조하는 방법 |
| WO2012026695A2 (en) | 2010-08-27 | 2012-03-01 | Seoul Opto Device Co., Ltd. | Light emitting diode with improved luminous efficiency |
| KR101171330B1 (ko) * | 2010-08-27 | 2012-08-10 | 서울옵토디바이스주식회사 | 개선된 발광 효율을 갖는 발광 다이오드 |
| US9070851B2 (en) * | 2010-09-24 | 2015-06-30 | Seoul Semiconductor Co., Ltd. | Wafer-level light emitting diode package and method of fabricating the same |
| KR20130021300A (ko) * | 2011-08-22 | 2013-03-05 | 엘지이노텍 주식회사 | 발광소자, 발광소자 패키지, 및 라이트 유닛 |
| KR101888604B1 (ko) * | 2011-10-28 | 2018-08-14 | 엘지이노텍 주식회사 | 발광 소자 및 발광 소자 패키지 |
| US10388690B2 (en) * | 2012-08-07 | 2019-08-20 | Seoul Viosys Co., Ltd. | Wafer level light-emitting diode array |
| US8946762B2 (en) * | 2012-08-20 | 2015-02-03 | Electronics And Telecommunications Research Institute | Light emitting diode and light emitting diode package |
| CN104885236B (zh) * | 2012-12-21 | 2017-12-19 | 首尔伟傲世有限公司 | 发光二极管 |
| KR101457205B1 (ko) * | 2013-02-06 | 2014-10-31 | 서울바이오시스 주식회사 | 서로 이격된 반도체층들을 갖는 발광 소자 및 그것을 제조하는 방법 |
| JP6023660B2 (ja) | 2013-05-30 | 2016-11-09 | スタンレー電気株式会社 | 半導体発光素子及び半導体発光装置 |
| DE102014011893B4 (de) * | 2013-08-16 | 2020-10-01 | Seoul Viosys Co., Ltd. | Leuchtdiode |
| TW201511362A (zh) * | 2013-09-09 | 2015-03-16 | Lextar Electronics Corp | 發光二極體晶片 |
| KR20160017905A (ko) | 2014-08-07 | 2016-02-17 | 엘지이노텍 주식회사 | 발광소자 및 조명시스템 |
| CN104300069B (zh) * | 2014-08-25 | 2017-06-16 | 大连德豪光电科技有限公司 | 高压led芯片及其制备方法 |
| KR102434778B1 (ko) | 2015-03-26 | 2022-08-23 | 쑤저우 레킨 세미컨덕터 컴퍼니 리미티드 | 발광 소자 패키지 |
-
2016
- 2016-12-23 KR KR1020160177357A patent/KR20180073866A/ko not_active Ceased
-
2017
- 2017-12-21 US US16/472,429 patent/US11121286B2/en active Active
- 2017-12-21 WO PCT/KR2017/015267 patent/WO2018117699A1/ko not_active Ceased
- 2017-12-21 CN CN202310063841.6A patent/CN116259643A/zh active Pending
- 2017-12-21 EP EP17884961.8A patent/EP3561886A4/en not_active Withdrawn
- 2017-12-21 CN CN201780079603.7A patent/CN110114893B/zh active Active
- 2017-12-21 JP JP2019534191A patent/JP7002550B2/ja active Active
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20160260869A1 (en) | 2013-10-11 | 2016-09-08 | Semicon Light Co., Ltd. | Semiconductor light emitting device |
| JP2015220456A (ja) | 2014-05-15 | 2015-12-07 | エルジー イノテック カンパニー リミテッド | 発光素子及びそれを含む照明装置 |
| US20180040767A1 (en) | 2015-02-16 | 2018-02-08 | Seoul Viosys Co., Ltd. | Light-emitting device with improved light extraction efficiency |
Also Published As
| Publication number | Publication date |
|---|---|
| EP3561886A4 (en) | 2020-09-02 |
| CN116259643A (zh) | 2023-06-13 |
| CN110114893A (zh) | 2019-08-09 |
| US20200194628A1 (en) | 2020-06-18 |
| KR20180073866A (ko) | 2018-07-03 |
| CN110114893B (zh) | 2023-02-03 |
| EP3561886A1 (en) | 2019-10-30 |
| WO2018117699A1 (ko) | 2018-06-28 |
| US11121286B2 (en) | 2021-09-14 |
| JP2020503678A (ja) | 2020-01-30 |
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