CN116259643A - 半导体器件 - Google Patents

半导体器件 Download PDF

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Publication number
CN116259643A
CN116259643A CN202310063841.6A CN202310063841A CN116259643A CN 116259643 A CN116259643 A CN 116259643A CN 202310063841 A CN202310063841 A CN 202310063841A CN 116259643 A CN116259643 A CN 116259643A
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CN
China
Prior art keywords
light emitting
semiconductor layer
emitting structure
electrode
layer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
CN202310063841.6A
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English (en)
Chinese (zh)
Inventor
徐在元
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Suzhou Liyu Semiconductor Co ltd
Original Assignee
Suzhou Liyu Semiconductor Co ltd
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Filing date
Publication date
Application filed by Suzhou Liyu Semiconductor Co ltd filed Critical Suzhou Liyu Semiconductor Co ltd
Publication of CN116259643A publication Critical patent/CN116259643A/zh
Pending legal-status Critical Current

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H10H20/857—Interconnections, e.g. lead-frames, bond wires or solder balls
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H29/00—Integrated devices, or assemblies of multiple devices, comprising at least one light-emitting semiconductor element covered by group H10H20/00
    • H10H29/10—Integrated devices comprising at least one light-emitting semiconductor component covered by group H10H20/00
    • H10H29/14—Integrated devices comprising at least one light-emitting semiconductor component covered by group H10H20/00 comprising multiple light-emitting semiconductor components
    • H10H29/142—Two-dimensional arrangements, e.g. asymmetric LED layout
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/01—Manufacture or treatment
    • H10H20/032—Manufacture or treatment of electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/01—Manufacture or treatment
    • H10H20/036—Manufacture or treatment of packages
    • H10H20/0364—Manufacture or treatment of packages of interconnections
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/822—Materials of the light-emitting regions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/83—Electrodes
    • H10H20/831—Electrodes characterised by their shape
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/83—Electrodes
    • H10H20/832—Electrodes characterised by their material
    • H10H20/835—Reflective materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/84—Coatings, e.g. passivation layers or antireflective coatings
    • H10H20/841—Reflective coatings, e.g. dielectric Bragg reflectors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H29/00—Integrated devices, or assemblies of multiple devices, comprising at least one light-emitting semiconductor element covered by group H10H20/00
    • H10H29/10—Integrated devices comprising at least one light-emitting semiconductor component covered by group H10H20/00
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/12—Passive devices, e.g. 2 terminal devices
    • H01L2924/1204—Optical Diode
    • H01L2924/12041—LED
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/01—Manufacture or treatment
    • H10H20/034—Manufacture or treatment of coatings
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/819—Bodies characterised by their shape, e.g. curved or truncated substrates
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/819—Bodies characterised by their shape, e.g. curved or truncated substrates
    • H10H20/82—Roughened surfaces, e.g. at the interface between epitaxial layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/83—Electrodes
    • H10H20/831—Electrodes characterised by their shape
    • H10H20/8314—Electrodes characterised by their shape extending at least partially onto an outer side surface of the bodies

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  • Led Devices (AREA)
CN202310063841.6A 2016-12-23 2017-12-21 半导体器件 Pending CN116259643A (zh)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
KR10-2016-0177357 2016-12-23
KR1020160177357A KR20180073866A (ko) 2016-12-23 2016-12-23 반도체 소자
PCT/KR2017/015267 WO2018117699A1 (ko) 2016-12-23 2017-12-21 반도체 소자
CN201780079603.7A CN110114893B (zh) 2016-12-23 2017-12-21 半导体器件

Related Parent Applications (1)

Application Number Title Priority Date Filing Date
CN201780079603.7A Division CN110114893B (zh) 2016-12-23 2017-12-21 半导体器件

Publications (1)

Publication Number Publication Date
CN116259643A true CN116259643A (zh) 2023-06-13

Family

ID=62626866

Family Applications (2)

Application Number Title Priority Date Filing Date
CN202310063841.6A Pending CN116259643A (zh) 2016-12-23 2017-12-21 半导体器件
CN201780079603.7A Active CN110114893B (zh) 2016-12-23 2017-12-21 半导体器件

Family Applications After (1)

Application Number Title Priority Date Filing Date
CN201780079603.7A Active CN110114893B (zh) 2016-12-23 2017-12-21 半导体器件

Country Status (6)

Country Link
US (1) US11121286B2 (enExample)
EP (1) EP3561886A4 (enExample)
JP (1) JP7002550B2 (enExample)
KR (1) KR20180073866A (enExample)
CN (2) CN116259643A (enExample)
WO (1) WO2018117699A1 (enExample)

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KR102450150B1 (ko) * 2018-03-02 2022-10-04 삼성전자주식회사 반도체 발광소자
TWI832768B (zh) * 2018-07-12 2024-02-11 晶元光電股份有限公司 發光元件
TWI807850B (zh) * 2018-07-12 2023-07-01 晶元光電股份有限公司 發光元件
TWI770225B (zh) 2018-07-12 2022-07-11 晶元光電股份有限公司 發光元件
KR102564211B1 (ko) * 2018-08-31 2023-08-07 쑤저우 레킨 세미컨덕터 컴퍼니 리미티드 반도체 소자 및 이의 제조 방법
US11387386B2 (en) * 2019-01-07 2022-07-12 Nikkiso Co., Ltd. Semiconductor light emitting element and method of manufacturing semiconductor light emitting element
JP7312056B2 (ja) * 2019-01-07 2023-07-20 日機装株式会社 半導体発光素子および半導体発光素子の製造方法
JP7339559B2 (ja) * 2021-05-20 2023-09-06 日亜化学工業株式会社 発光素子
CN113707782B (zh) * 2021-08-24 2023-02-17 厦门三安光电有限公司 倒装发光二极管及其制备方法
CN113903840B (zh) * 2021-09-14 2022-12-16 厦门三安光电有限公司 发光二极管及发光模块
JP7575011B2 (ja) * 2022-08-25 2024-10-29 シャープ株式会社 Ｌｅｄアレイ

Citations (3)

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CN104300069A (zh) * 2014-08-25 2015-01-21 大连德豪光电科技有限公司 高压led芯片及其制备方法
CN104885236A (zh) * 2012-12-21 2015-09-02 首尔伟傲世有限公司 发光二极管及其制造方法

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US7462868B2 (en) * 2006-02-26 2008-12-09 Formosa Epitaxy Incorporation Light emitting diode chip with double close-loop electrode design
KR101017395B1 (ko) 2008-12-24 2011-02-28 서울옵토디바이스주식회사 복수개의 발광셀들을 갖는 발광 소자 및 그것을 제조하는 방법
WO2012026695A2 (en) 2010-08-27 2012-03-01 Seoul Opto Device Co., Ltd. Light emitting diode with improved luminous efficiency
KR101171330B1 (ko) * 2010-08-27 2012-08-10 서울옵토디바이스주식회사 개선된 발광 효율을 갖는 발광 다이오드
US9070851B2 (en) * 2010-09-24 2015-06-30 Seoul Semiconductor Co., Ltd. Wafer-level light emitting diode package and method of fabricating the same
KR101888604B1 (ko) * 2011-10-28 2018-08-14 엘지이노텍 주식회사 발광 소자 및 발광 소자 패키지
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CN102956779A (zh) * 2011-08-22 2013-03-06 Lg伊诺特有限公司 发光器件及发光器件封装件
CN104885236A (zh) * 2012-12-21 2015-09-02 首尔伟傲世有限公司 发光二极管及其制造方法
CN104300069A (zh) * 2014-08-25 2015-01-21 大连德豪光电科技有限公司 高压led芯片及其制备方法

Also Published As

Publication number Publication date
EP3561886A4 (en) 2020-09-02
CN110114893A (zh) 2019-08-09
JP7002550B2 (ja) 2022-01-20
US20200194628A1 (en) 2020-06-18
KR20180073866A (ko) 2018-07-03
CN110114893B (zh) 2023-02-03
EP3561886A1 (en) 2019-10-30
WO2018117699A1 (ko) 2018-06-28
US11121286B2 (en) 2021-09-14
JP2020503678A (ja) 2020-01-30

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