KR20180073866A - 반도체 소자 - Google Patents

반도체 소자 Download PDF

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Publication number
KR20180073866A
KR20180073866A KR1020160177357A KR20160177357A KR20180073866A KR 20180073866 A KR20180073866 A KR 20180073866A KR 1020160177357 A KR1020160177357 A KR 1020160177357A KR 20160177357 A KR20160177357 A KR 20160177357A KR 20180073866 A KR20180073866 A KR 20180073866A
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KR
South Korea
Prior art keywords
electrode
semiconductor layer
light emitting
layer
disposed
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
KR1020160177357A
Other languages
English (en)
Korean (ko)
Inventor
서재원
Original Assignee
엘지이노텍 주식회사
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 엘지이노텍 주식회사 filed Critical 엘지이노텍 주식회사
Priority to KR1020160177357A priority Critical patent/KR20180073866A/ko
Priority to US16/472,429 priority patent/US11121286B2/en
Priority to EP17884961.8A priority patent/EP3561886A4/en
Priority to PCT/KR2017/015267 priority patent/WO2018117699A1/ko
Priority to JP2019534191A priority patent/JP7002550B2/ja
Priority to CN202310063841.6A priority patent/CN116259643A/zh
Priority to CN201780079603.7A priority patent/CN110114893B/zh
Publication of KR20180073866A publication Critical patent/KR20180073866A/ko
Ceased legal-status Critical Current

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    • H01L33/62—
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H29/00—Integrated devices, or assemblies of multiple devices, comprising at least one light-emitting semiconductor element covered by group H10H20/00
    • H10H29/10—Integrated devices comprising at least one light-emitting semiconductor component covered by group H10H20/00
    • H10H29/14—Integrated devices comprising at least one light-emitting semiconductor component covered by group H10H20/00 comprising multiple light-emitting semiconductor components
    • H10H29/142—Two-dimensional arrangements, e.g. asymmetric LED layout
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H10H20/857—Interconnections, e.g. lead-frames, bond wires or solder balls
    • H01L33/26—
    • H01L33/38—
    • H01L33/405—
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/01—Manufacture or treatment
    • H10H20/032—Manufacture or treatment of electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/01—Manufacture or treatment
    • H10H20/036—Manufacture or treatment of packages
    • H10H20/0364—Manufacture or treatment of packages of interconnections
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/822—Materials of the light-emitting regions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/83—Electrodes
    • H10H20/831—Electrodes characterised by their shape
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/83—Electrodes
    • H10H20/832—Electrodes characterised by their material
    • H10H20/835—Reflective materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/84—Coatings, e.g. passivation layers or antireflective coatings
    • H10H20/841—Reflective coatings, e.g. dielectric Bragg reflectors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H29/00—Integrated devices, or assemblies of multiple devices, comprising at least one light-emitting semiconductor element covered by group H10H20/00
    • H10H29/10—Integrated devices comprising at least one light-emitting semiconductor component covered by group H10H20/00
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/12—Passive devices, e.g. 2 terminal devices
    • H01L2924/1204—Optical Diode
    • H01L2924/12041—LED
    • H01L2933/0016—
    • H01L2933/0066—
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/01—Manufacture or treatment
    • H10H20/034—Manufacture or treatment of coatings
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/819—Bodies characterised by their shape, e.g. curved or truncated substrates
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/819—Bodies characterised by their shape, e.g. curved or truncated substrates
    • H10H20/82—Roughened surfaces, e.g. at the interface between epitaxial layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/83—Electrodes
    • H10H20/831—Electrodes characterised by their shape
    • H10H20/8314—Electrodes characterised by their shape extending at least partially onto an outer side surface of the bodies

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  • Led Devices (AREA)
KR1020160177357A 2016-12-23 2016-12-23 반도체 소자 Ceased KR20180073866A (ko)

Priority Applications (7)

Application Number Priority Date Filing Date Title
KR1020160177357A KR20180073866A (ko) 2016-12-23 2016-12-23 반도체 소자
US16/472,429 US11121286B2 (en) 2016-12-23 2017-12-21 Semiconductor device
EP17884961.8A EP3561886A4 (en) 2016-12-23 2017-12-21 SEMICONDUCTOR DEVICE
PCT/KR2017/015267 WO2018117699A1 (ko) 2016-12-23 2017-12-21 반도체 소자
JP2019534191A JP7002550B2 (ja) 2016-12-23 2017-12-21 半導体素子
CN202310063841.6A CN116259643A (zh) 2016-12-23 2017-12-21 半导体器件
CN201780079603.7A CN110114893B (zh) 2016-12-23 2017-12-21 半导体器件

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1020160177357A KR20180073866A (ko) 2016-12-23 2016-12-23 반도체 소자

Publications (1)

Publication Number Publication Date
KR20180073866A true KR20180073866A (ko) 2018-07-03

Family

ID=62626866

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020160177357A Ceased KR20180073866A (ko) 2016-12-23 2016-12-23 반도체 소자

Country Status (6)

Country Link
US (1) US11121286B2 (enExample)
EP (1) EP3561886A4 (enExample)
JP (1) JP7002550B2 (enExample)
KR (1) KR20180073866A (enExample)
CN (2) CN110114893B (enExample)
WO (1) WO2018117699A1 (enExample)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20200025757A (ko) * 2018-08-31 2020-03-10 엘지이노텍 주식회사 반도체 소자 및 이의 제조 방법
TWI807850B (zh) * 2018-07-12 2023-07-01 晶元光電股份有限公司 發光元件
US11942509B2 (en) 2018-07-12 2024-03-26 Epistar Corporation Light-emitting device

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR102450150B1 (ko) 2018-03-02 2022-10-04 삼성전자주식회사 반도체 발광소자
TWI832768B (zh) * 2018-07-12 2024-02-11 晶元光電股份有限公司 發光元件
US11387386B2 (en) * 2019-01-07 2022-07-12 Nikkiso Co., Ltd. Semiconductor light emitting element and method of manufacturing semiconductor light emitting element
JP7312056B2 (ja) * 2019-01-07 2023-07-20 日機装株式会社 半導体発光素子および半導体発光素子の製造方法
JP7339559B2 (ja) * 2021-05-20 2023-09-06 日亜化学工業株式会社 発光素子
CN113707782B (zh) * 2021-08-24 2023-02-17 厦门三安光电有限公司 倒装发光二极管及其制备方法
CN113903840B (zh) * 2021-09-14 2022-12-16 厦门三安光电有限公司 发光二极管及发光模块
JP7575011B2 (ja) * 2022-08-25 2024-10-29 シャープ株式会社 Ｌｅｄアレイ

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US7755095B2 (en) * 2003-12-24 2010-07-13 Panasonic Corporation Semiconductor light emitting device, lighting module, lighting apparatus, display element, and manufacturing method for semiconductor light emitting device
US7462868B2 (en) * 2006-02-26 2008-12-09 Formosa Epitaxy Incorporation Light emitting diode chip with double close-loop electrode design
KR101017395B1 (ko) 2008-12-24 2011-02-28 서울옵토디바이스주식회사 복수개의 발광셀들을 갖는 발광 소자 및 그것을 제조하는 방법
KR101171330B1 (ko) * 2010-08-27 2012-08-10 서울옵토디바이스주식회사 개선된 발광 효율을 갖는 발광 다이오드
WO2012026695A2 (en) 2010-08-27 2012-03-01 Seoul Opto Device Co., Ltd. Light emitting diode with improved luminous efficiency
US9070851B2 (en) * 2010-09-24 2015-06-30 Seoul Semiconductor Co., Ltd. Wafer-level light emitting diode package and method of fabricating the same
KR20130021300A (ko) * 2011-08-22 2013-03-05 엘지이노텍 주식회사 발광소자, 발광소자 패키지, 및 라이트 유닛
KR101888604B1 (ko) * 2011-10-28 2018-08-14 엘지이노텍 주식회사 발광 소자 및 발광 소자 패키지
US10388690B2 (en) * 2012-08-07 2019-08-20 Seoul Viosys Co., Ltd. Wafer level light-emitting diode array
US8946762B2 (en) * 2012-08-20 2015-02-03 Electronics And Telecommunications Research Institute Light emitting diode and light emitting diode package
CN107768399B (zh) * 2012-12-21 2022-02-18 首尔伟傲世有限公司 发光二极管
KR101457205B1 (ko) * 2013-02-06 2014-10-31 서울바이오시스 주식회사 서로 이격된 반도체층들을 갖는 발광 소자 및 그것을 제조하는 방법
JP6023660B2 (ja) 2013-05-30 2016-11-09 スタンレー電気株式会社 半導体発光素子及び半導体発光装置
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TW201511362A (zh) * 2013-09-09 2015-03-16 Lextar Electronics Corp 發光二極體晶片
CN108389946B (zh) * 2013-10-11 2022-04-08 世迈克琉明有限公司 半导体发光元件
KR102162437B1 (ko) * 2014-05-15 2020-10-07 엘지이노텍 주식회사 발광 소자 및 이를 포함하는 발광 소자 패키지
KR20160017905A (ko) 2014-08-07 2016-02-17 엘지이노텍 주식회사 발광소자 및 조명시스템
CN104300069B (zh) * 2014-08-25 2017-06-16 大连德豪光电科技有限公司 高压led芯片及其制备方法
US10326050B2 (en) * 2015-02-16 2019-06-18 Seoul Viosys Co., Ltd. Light-emitting device with improved light extraction efficiency
KR102434778B1 (ko) 2015-03-26 2022-08-23 쑤저우 레킨 세미컨덕터 컴퍼니 리미티드 발광 소자 패키지

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI807850B (zh) * 2018-07-12 2023-07-01 晶元光電股份有限公司 發光元件
US11942509B2 (en) 2018-07-12 2024-03-26 Epistar Corporation Light-emitting device
US12283606B2 (en) 2018-07-12 2025-04-22 Epistar Corporation Light-emitting device
KR20200025757A (ko) * 2018-08-31 2020-03-10 엘지이노텍 주식회사 반도체 소자 및 이의 제조 방법

Also Published As

Publication number Publication date
WO2018117699A1 (ko) 2018-06-28
JP2020503678A (ja) 2020-01-30
EP3561886A4 (en) 2020-09-02
CN110114893A (zh) 2019-08-09
CN116259643A (zh) 2023-06-13
EP3561886A1 (en) 2019-10-30
CN110114893B (zh) 2023-02-03
US20200194628A1 (en) 2020-06-18
JP7002550B2 (ja) 2022-01-20
US11121286B2 (en) 2021-09-14

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