JP5963004B2 - 窒化物半導体発光素子 - Google Patents
窒化物半導体発光素子 Download PDFInfo
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- 239000004065 semiconductor Substances 0.000 title claims description 245
- 150000004767 nitrides Chemical class 0.000 title claims description 234
- 238000005253 cladding Methods 0.000 claims description 258
- 230000003287 optical effect Effects 0.000 claims description 76
- 239000004020 conductor Substances 0.000 claims description 36
- 239000000758 substrate Substances 0.000 claims description 32
- 239000000463 material Substances 0.000 claims description 25
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 claims description 8
- 239000011787 zinc oxide Substances 0.000 claims description 4
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 claims description 3
- 229910052787 antimony Inorganic materials 0.000 claims description 3
- WATWJIUSRGPENY-UHFFFAOYSA-N antimony atom Chemical compound [Sb] WATWJIUSRGPENY-UHFFFAOYSA-N 0.000 claims description 3
- XOLBLPGZBRYERU-UHFFFAOYSA-N tin dioxide Chemical compound O=[Sn]=O XOLBLPGZBRYERU-UHFFFAOYSA-N 0.000 claims description 3
- 229910001887 tin oxide Inorganic materials 0.000 claims description 3
- 229910003437 indium oxide Inorganic materials 0.000 claims description 2
- PJXISJQVUVHSOJ-UHFFFAOYSA-N indium(iii) oxide Chemical compound [O-2].[O-2].[O-2].[In+3].[In+3] PJXISJQVUVHSOJ-UHFFFAOYSA-N 0.000 claims description 2
- 239000010410 layer Substances 0.000 description 616
- 239000010408 film Substances 0.000 description 94
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 description 39
- 229910002601 GaN Inorganic materials 0.000 description 34
- 238000010586 diagram Methods 0.000 description 28
- 229910002704 AlGaN Inorganic materials 0.000 description 22
- 229910004298 SiO 2 Inorganic materials 0.000 description 19
- 230000008033 biological extinction Effects 0.000 description 16
- 239000000203 mixture Substances 0.000 description 14
- 230000004888 barrier function Effects 0.000 description 13
- 230000000903 blocking effect Effects 0.000 description 13
- 239000010931 gold Substances 0.000 description 12
- 230000031700 light absorption Effects 0.000 description 12
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 12
- 230000000694 effects Effects 0.000 description 11
- 238000004519 manufacturing process Methods 0.000 description 10
- 238000000034 method Methods 0.000 description 10
- KDLHZDBZIXYQEI-UHFFFAOYSA-N Palladium Chemical compound [Pd] KDLHZDBZIXYQEI-UHFFFAOYSA-N 0.000 description 9
- 238000000206 photolithography Methods 0.000 description 9
- 239000010936 titanium Substances 0.000 description 9
- 238000007740 vapor deposition Methods 0.000 description 8
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 6
- 239000000969 carrier Substances 0.000 description 6
- 239000010409 thin film Substances 0.000 description 5
- 238000003776 cleavage reaction Methods 0.000 description 4
- 238000000151 deposition Methods 0.000 description 4
- 238000005268 plasma chemical vapour deposition Methods 0.000 description 4
- 230000007017 scission Effects 0.000 description 4
- 238000004544 sputter deposition Methods 0.000 description 4
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 3
- 229910003460 diamond Inorganic materials 0.000 description 3
- 239000010432 diamond Substances 0.000 description 3
- 238000001312 dry etching Methods 0.000 description 3
- 238000005566 electron beam evaporation Methods 0.000 description 3
- 238000009713 electroplating Methods 0.000 description 3
- 238000005530 etching Methods 0.000 description 3
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 3
- 229910052737 gold Inorganic materials 0.000 description 3
- 229910052738 indium Inorganic materials 0.000 description 3
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 3
- 229910052751 metal Inorganic materials 0.000 description 3
- 239000002184 metal Substances 0.000 description 3
- 229910052763 palladium Inorganic materials 0.000 description 3
- 229910052697 platinum Inorganic materials 0.000 description 3
- 239000002002 slurry Substances 0.000 description 3
- 229910052719 titanium Inorganic materials 0.000 description 3
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- 230000002411 adverse Effects 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- 239000000470 constituent Substances 0.000 description 2
- 239000013078 crystal Substances 0.000 description 2
- 230000007423 decrease Effects 0.000 description 2
- 229910052733 gallium Inorganic materials 0.000 description 2
- 239000007789 gas Substances 0.000 description 2
- 229910052757 nitrogen Inorganic materials 0.000 description 2
- 238000005498 polishing Methods 0.000 description 2
- 229910052594 sapphire Inorganic materials 0.000 description 2
- 239000010980 sapphire Substances 0.000 description 2
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 2
- 238000001039 wet etching Methods 0.000 description 2
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 1
- 235000005811 Viola adunca Nutrition 0.000 description 1
- 240000009038 Viola odorata Species 0.000 description 1
- 235000013487 Viola odorata Nutrition 0.000 description 1
- 235000002254 Viola papilionacea Nutrition 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 230000000593 degrading effect Effects 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 230000002542 deteriorative effect Effects 0.000 description 1
- 239000002019 doping agent Substances 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 229910021478 group 5 element Inorganic materials 0.000 description 1
- 238000005286 illumination Methods 0.000 description 1
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 description 1
- 238000002347 injection Methods 0.000 description 1
- 239000007924 injection Substances 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 238000005224 laser annealing Methods 0.000 description 1
- 239000004973 liquid crystal related substance Substances 0.000 description 1
- 239000012528 membrane Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- -1 nitride compound Chemical class 0.000 description 1
- NQBRDZOHGALQCB-UHFFFAOYSA-N oxoindium Chemical compound [O].[In] NQBRDZOHGALQCB-UHFFFAOYSA-N 0.000 description 1
- 238000000059 patterning Methods 0.000 description 1
- 239000002356 single layer Substances 0.000 description 1
- 230000002269 spontaneous effect Effects 0.000 description 1
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- H01S5/00—Semiconductor lasers
- H01S5/30—Structure or shape of the active region; Materials used for the active region
- H01S5/32—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures
- H01S5/323—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y20/00—Nanooptics, e.g. quantum optics or photonic crystals
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- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/20—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a particular shape, e.g. curved or truncated substrate
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- H01S5/00—Semiconductor lasers
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- H01S5/042—Electrical excitation ; Circuits therefor
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- H01S5/00—Semiconductor lasers
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- H01S5/00—Semiconductor lasers
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- H01S5/04—Processes or apparatus for excitation, e.g. pumping, e.g. by electron beams
- H01S5/042—Electrical excitation ; Circuits therefor
- H01S5/0421—Electrical excitation ; Circuits therefor characterised by the semiconducting contacting layers
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- H01S5/042—Electrical excitation ; Circuits therefor
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- H01S5/00—Semiconductor lasers
- H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
- H01S5/2004—Confining in the direction perpendicular to the layer structure
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- H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
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- H01S5/30—Structure or shape of the active region; Materials used for the active region
- H01S5/32—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures
- H01S5/3211—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures characterised by special cladding layers, e.g. details on band-discontinuities
- H01S5/3213—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures characterised by special cladding layers, e.g. details on band-discontinuities asymmetric clading layers
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- H01S5/00—Semiconductor lasers
- H01S5/30—Structure or shape of the active region; Materials used for the active region
- H01S5/34—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers
- H01S5/343—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser
- H01S5/34333—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser with a well layer based on Ga(In)N or Ga(In)P, e.g. blue laser
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Description
まず、本発明の第1の実施形態に係る窒化物半導体発光素子100について、図面を参照しながら説明する。本実施形態に係る窒化物半導体発光素子100は、窒化物半導体を用いたレーザダイオードであり、発光波長は390nm〜420nmであって、好ましくは中心波長が405nmである。
次に、本発明の第2の実施形態に係る窒化物半導体発光素子200について、図面を参照しながら説明する。
次に、本発明の第3の実施形態に係る窒化物半導体発光素子300について、図面を参照しながら説明する。
次に、本発明の第4の実施形態に係る窒化物半導体発光素子400について、図14を用いて説明する。図14は、本発明の第4の実施形態に係る窒化物半導体発光素子の断面図である。
次に、本発明の第5の実施形態に係る窒化物半導体発光素子500について、図15を用いて説明する。
101、201、301、401、501、2101 基板
102、202、302、402、502 下部クラッド層
103、203、303、403、503 下部ガイド層
104、204、304、404、504 活性層
105、205、305、405 上部ガイド層
106、206、306、406、506 電子障壁層
107、207、307、407、507、2180 上部クラッド層
108、208、308、408、508 第1上部クラッド層
109、209、309、409、509 第2上部クラッド層
120、220、320、420、520 光導波路
125、225、325、425、525 コンタクト面
130、230、330、430 絶縁膜
140、240、340、440、540、2190 p側電極
141、241、341、441、541 パッド電極
150、250、350、450、550、2120 n側電極
408a、508a 第3上部クラッド層
505a 第1上部ガイド層
505b 第2上部ガイド層
530 電流ブロック層
2100 レーザダイオード
2110 n型コンタクト層
2130 n型下部クラッド層
2140 n型下部導波路層
2150 多重量子井戸領域
2155 活性領域
2160 p型閉じ込め層
2170 p型上部導波路層
Claims (3)
- 光導波路を有する窒化物半導体発光素子であって、
当該半導体発光素子は、基板上に、n型の第1クラッド層と、活性層と、p型のガイド層と、第2クラッド層とを少なくともこの順に含み、
前記第2クラッド層は、透明導電体によって構成された透明導電体層と、当該透明導電体層よりも前記活性層側に形成され、p型のAl x In y Ga 1−x−y N(0<x≦0.82、0≦y≦0.18、0≦1−x−y<1)からなる窒化物半導体によって構成された少なくともAlを含む窒化物半導体層とを有し、
前記ガイド層と前記第2クラッド層との合計膜厚dは、0.1μm<d<0.5μmであり、
前記透明導電体層の膜厚は、100nmより大きい
窒化物半導体発光素子。 - 前記光導波路は、前記第2クラッド層から前記第1クラッド層の一部までを掘り込んで形成された垂直メサ構造である
請求項1に記載の窒化物半導体発光素子。 - 前記透明導電体の材料は、錫が添加された酸化インジウム、アンチモンが添加された酸化錫、及び酸化亜鉛のうちのいずれか1つである
請求項1に記載の窒化物半導体発光素子。
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2011066507 | 2011-03-24 | ||
JP2011066507 | 2011-03-24 | ||
PCT/JP2012/001144 WO2012127778A1 (ja) | 2011-03-24 | 2012-02-21 | 窒化物半導体発光素子 |
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Publication Number | Publication Date |
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JPWO2012127778A1 JPWO2012127778A1 (ja) | 2014-07-24 |
JP5963004B2 true JP5963004B2 (ja) | 2016-08-03 |
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JP2013505786A Active JP5963004B2 (ja) | 2011-03-24 | 2012-02-21 | 窒化物半導体発光素子 |
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Country | Link |
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US (1) | US8942269B2 (ja) |
JP (1) | JP5963004B2 (ja) |
CN (1) | CN103444021B (ja) |
WO (1) | WO2012127778A1 (ja) |
Families Citing this family (14)
Publication number | Priority date | Publication date | Assignee | Title |
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WO2013157176A1 (ja) | 2012-04-16 | 2013-10-24 | パナソニック株式会社 | 半導体発光素子 |
TWI535055B (zh) | 2012-11-19 | 2016-05-21 | 新世紀光電股份有限公司 | 氮化物半導體結構及半導體發光元件 |
TWI524551B (zh) | 2012-11-19 | 2016-03-01 | 新世紀光電股份有限公司 | 氮化物半導體結構及半導體發光元件 |
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JP2010016261A (ja) * | 2008-07-04 | 2010-01-21 | Sharp Corp | 窒化物半導体レーザ素子 |
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