CN101107720A - 使用电流限制结构和表面粗糙化的发光二极管 - Google Patents

使用电流限制结构和表面粗糙化的发光二极管 Download PDF

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Publication number
CN101107720A
CN101107720A CNA2005800470913A CN200580047091A CN101107720A CN 101107720 A CN101107720 A CN 101107720A CN A2005800470913 A CNA2005800470913 A CN A2005800470913A CN 200580047091 A CN200580047091 A CN 200580047091A CN 101107720 A CN101107720 A CN 101107720A
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China
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layer
led
confinement structure
type material
contact
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Pending
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CNA2005800470913A
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English (en)
Chinese (zh)
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S·P·迪巴尔司
中村修二
M·巴特雷斯
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Wolfspeed Inc
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Cree Lighting Co
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/83—Electrodes
    • H10H20/832—Electrodes characterised by their material
    • H10H20/833—Transparent materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/816—Bodies having carrier transport control structures, e.g. highly-doped semiconductor layers or current-blocking structures
    • H10H20/8162—Current-blocking structures
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/819—Bodies characterised by their shape, e.g. curved or truncated substrates
    • H10H20/82—Roughened surfaces, e.g. at the interface between epitaxial layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/83—Electrodes
    • H10H20/832—Electrodes characterised by their material
    • H10H20/835—Reflective materials

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CNA2005800470913A 2005-01-24 2005-09-15 使用电流限制结构和表面粗糙化的发光二极管 Pending CN101107720A (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US11/042,030 US7335920B2 (en) 2005-01-24 2005-01-24 LED with current confinement structure and surface roughening
US11/042,030 2005-01-24

Publications (1)

Publication Number Publication Date
CN101107720A true CN101107720A (zh) 2008-01-16

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CNA2005800470913A Pending CN101107720A (zh) 2005-01-24 2005-09-15 使用电流限制结构和表面粗糙化的发光二极管

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US (5) US7335920B2 (enExample)
EP (2) EP1849193B1 (enExample)
JP (3) JP2008529271A (enExample)
CN (1) CN101107720A (enExample)
AT (1) ATE524838T1 (enExample)
TW (1) TWI372471B (enExample)
WO (1) WO2006080958A1 (enExample)

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102047454A (zh) * 2008-04-16 2011-05-04 Lg伊诺特有限公司 发光器件及其制造方法
CN102169945A (zh) * 2010-02-08 2011-08-31 Lg伊诺特有限公司 发光器件和具有发光器件的发光器件封装
CN102468377A (zh) * 2010-11-23 2012-05-23 孙智江 一种提高电流扩展效应的led制作方法
WO2012171331A1 (en) * 2011-06-15 2012-12-20 Semileds Optoelectronics Co.,Ltd Vertical led with current guiding structure
CN103137809A (zh) * 2011-12-05 2013-06-05 联胜光电股份有限公司 一种具电流扩散结构的发光二极管与其制造方法
CN103383982A (zh) * 2012-05-03 2013-11-06 联胜光电股份有限公司 发光二极管的电极接触结构
CN110957204A (zh) * 2018-09-26 2020-04-03 中国科学院苏州纳米技术与纳米仿生研究所 Iii族氮化物光电子器件的制作方法

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