JP6275817B2 - 仮像電子及び光学電子装置に対する平面コンタクト - Google Patents
仮像電子及び光学電子装置に対する平面コンタクト Download PDFInfo
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Description
この出願は2013年3月15日に出願の米国の仮特許出願第61/788,141号の利益および優先権を主張する。この出願の全ての開示は引用により本願明細書に組み込まれたものとする。
(政府サポート)
ここで使用しているように、用語は、「実質的に」±10%および実施例によっては±5%を意味する。期間、「さもなければ本願明細書において定められない限り、基本的に、機能するために貢献する他の材料を除外している手段から成る。にもかかわらず、他の材料は、集合的に、または、個々に、結果的に総計に存在してもよい。
本発明の好ましい実施形態の発光デバイスは紫外線の放射のために構成されるにもかかわらず、基板は紫外線(例えばシリコン)を透過する必要はない。これは、次のことの故である。それはデバイス製造の間、部分的に、または、実質的に取り除かれることができる。)本発明の実施例による装置も、滑らかである(すなわち、約6nmを下回る平方二乗平均(Rq)面粗さを有しているか、約1nmを下回るさえ)細いp―GaNまたはp―AlxGa1−xNコンタクト層を有する。粗さは約200μm×約300μm、例えば、約233μm×約306.5μmのサンプル・サイズ上の光学的プロフィロメトリによって特徴づけることができる。図1は、33nmのRq値を有する従来の凸凹のコンタクト層面のプロフィロメトリ走査を表す。対照的に、図2は、わずか約6nmのRq値を有する本発明の実施形態のなめらかな接触面を表す。
このように、良好なオーム接触を成し遂げると共に、光子を反射するために、ほぼ無反射性(少なくともUV光子に)接触冶金学(例えばNi/AuまたはPd)が、コンタクト層上に形成されるが、半導体の上の接触の表層「足跡」を減らすためにパターン化されることができる。このように、UV光子に無反射であるデバイス層の上の表面積は最小化され、半導体に対する良好なオーム接触は成し遂げられる。少なくとも一部のUV光子を反射するために、Alのような反射する金属は、無反射コンタクト面積との間の半導体上に直接設けることができる。反射する金属は無反射金属とのオーム接触を作り、無反射金属によって形成される優れた金属―半導体コンタクトを利用して、LEDに電気接触を可能にする。
Claims (39)
- 紫外線(UV)発光装置に対するコンタクトを形成する方法であって、前記方法は、
y≧0.4であるAlyGa1−yN上面を有する基板を提供すること、
前記基板の上に、それぞれAlxGa1−xNを有する複数の層を含むアクティブ発光装置構造を形成すること、
前記アクティブ発光装置構造の上に、ドープされていないAl1−zGazNの傾斜組成を有する傾斜組成層を形成するときに、前記傾斜組成層の組成をGa濃度zが前記発光層構造から離れる方向にそって増加するように形成すること、
前記傾斜組成層の上に、(i)2nmと30nmの間の厚み、(ii)200μm×300μmの大きさの試料における表面粗さが6nm未満、および(iii)Ga濃度w≧0.8を有するp型ドープされたAl1−wGawNキャップ層を形成すること、
前記Al1−wGawNキャップ層に対する接触抵抗が1.0mΩ−cm2未満を有し、少なくとも1つの金属を含む金属コンタクトを前記Al1−wGawNキャップ層の上に形成すること、
を含む、方法。 - 前記Al1−wGawNキャップ層を形成することは、850℃と900℃の間の温度および成長圧力50Torr未満でエピタキシャル成長すること、を含む請求項1に記載の方法。
- 前記成長圧力は20Torrである、請求項2に記載の方法。
- 前記Al1−wGawNキャップ層は、Mgでドープされている請求項1に記載の方法。
- 前記Al1−wGawNキャップ層は、少なくとも部分的に緩和されている請求項1に記載の方法。
- 前記発光装置は25%を超える光子抽出効率を有する請求項1に記載の方法。
- 前記傾斜組成層および前記Al1−wGawNキャップ層は、前記発光装置構造により生成される340nm未満の波長を有するUV光子の80%未満を集合的に吸収する請求項1に記載の方法。
- 前記金属コンタクトの少なくとも1つの金属はNi/AuまたはPdを含む請求項1に記載の方法。
- 前記金属コンタクトは、前記発光装置構造により生成された光に対する60%未満の反射率を有する、請求項1に記載の方法。
- 前記金属コンタクトは、前記発光装置構造により生成される光に対する30%未満の反射率を有する、請求項1に記載の方法。
- 前記金属コンタクトは、前記少なくとも1つの金属の複数の分離した線および/または画素として形成され、前記Al1−wGawNキャップ層の一部は前記金属コンタクトで覆われていない、請求項1に記載の方法。
- 前記金属コンタクトと前記Al1−wGawNキャップ層の前記金属コンタクトで覆われていない部分の上に反射板を形成することをさらに含む、請求項11に記載の方法。
- 前記反射板はUV光に対して90%を超える反射率と4.5eV未満の仕事関数を有する金属を含む、請求項12に記載の方法。
- 前記反射板は5mΩ−cm2を超える前記Al1−wGawNキャップ層に対する接触抵抗を有する、請求項12に記載の方法。
- 前記反射板は10mΩ−cm2を超える前記Al1−wGawNキャップ層に対する接触抵抗を有する、請求項12に記載の方法。
- 前記反射板はAlを含む、請求項12に記載の方法。
- 前記発光装置は発光ダイオードを含む、請求項1に記載の方法。
- 前記アクティブ装置構造に最も近い前記傾斜組成層の底部は、直下のGa濃度とほぼ等しいGa濃度zを有し、前記傾斜組成層の前記底部と反対側の前記傾斜組成層の上面部はGa濃度zが1である、請求項1に記載の方法。
- 前記Al1−wGawNキャップ層を形成することは、0.5nm/分と5nm/分の間の成長速度でエピタキシャル成長することを含む、請求項1に記載の方法。
- 前記傾斜組成層を形成することと前記Al1−wGawNキャップ層を形成することの間において、Ga前駆体に露出することなく、前記キャップ層の前記p型ドープ剤の前駆体に対して前記傾斜組成層の表面を露出させることをさらに含む、請求項1に記載の方法。
- 前記キャップ層の前記p型ドープ剤はMgを含む、請求項20に記載の方法。
- 前記基板は、ドープされているか、またはドープされていないAlNを含む、請求項1に記載の方法。
- 紫外線(UV)発光装置であって、
y≧0.4であるAlyGa1−yN上面を有する基板と、
それぞれAlxGa1−xNを有する複数の層を含む、前記基板の上に配置される発光装置構造と、
前記装置構造の上に配置されるドープされていないAl1−zGazNの傾斜組成を有する傾斜組成層であって、前記傾斜組成層の組成はGa濃度zが前記発光層構造から離れる方向にそって増加する、傾斜組成層と、
前記傾斜組成層上に配置されるp型Al1−wGawNキャップ層であって、(i)2nmと30nmの間の厚み、(ii)200μm×300μmの大きさの試料における表面粗さが6nm未満、および(iii)Ga濃度w≧0.8を有する、p型ドープされたAl1−wGawNキャップ層と、
前記Al1−wGawNキャップ層上に配置され、少なくとも1つの金属を含み、前記Al1−wGawNキャップ層に対する1.0mΩ−cm2未満の接触抵抗を有する金属コンタクトと
とを含む、発光装置。 - 前記Al1−wGawNキャップ層はMgでドープされている請求項23に記載の発光装置。
- 前記Al1−wGawNキャップ層は少なくとも部分的に緩和されている請求項23に記載の発光装置。
- 前記発光装置は25%を超える光子抽出効率を有する請求項23に記載の発光装置。
- 前記傾斜組成層と前記Al1−wGawNキャップ層は、前記発光装置構造により生成される340nm未満の波長を有するUV光子の80%未満を集合的に吸収する請求項23に記載の発光装置。
- 前記金属コンタクトの前記少なくとも1つの金属はNi/AuまたはPdを含む請求項23に記載の発光装置。
- 前記金属コンタクトは、前記発光装置構造によって生成される光に対する反射率が60%未満を有する、請求項23に記載の発光装置。
- 前記金属コンタクトは、前記発光装置構造によって生成される光に対する反射率が30%未満を有する、請求項23に記載の発光装置。
- 前記金属コンタクトは、前記少なくとも1つの金属の複数の分離した線および/または画素の形を有し、前記Al1−wGawNキャップ層の一部は前記金属コンタクトで覆われていない、請求項23に記載の発光装置。
- 前記金属コンタクトと前記Al1−wGawNキャップ層の前記金属コンタクトで覆われていない部分の上に反射板をさらに有する、請求項31に記載の発光装置。
- 前記反射板はUV光に対して90%を超える反射率と4.5eV未満の仕事関数を有する金属を含む、請求項32に記載の発光装置。
- 前記反射板は5mΩ−cm2を超える前記Al1−wGawNキャップ層に対する接触抵抗を有する、請求項32に記載の発光装置。
- 前記反射板は10mΩ−cm2を超える前記Al1−wGawNキャップ層に対する接触抵抗を有する、請求項32に記載の発光装置。
- 前記反射板はAlを含む、請求項32に記載の発光装置。
- 前記発光装置は発光ダイオードを含む、請求項23に記載の発光装置。
- 前記アクティブ装置構造に最も近い前記傾斜組成層の底部は、直下のGa濃度とほぼ等しいGa濃度zを有し、前記傾斜組成層の前記底部と反対側の前記傾斜組成層の上面部はGa濃度zが1である、請求項23に記載の発光装置。
- 前記基板は、ドープされているか、またはドープされていないAlNを含む、請求項23に記載の発光装置。
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US20150280057A1 (en) | 2015-10-01 |
EP2973664A1 (en) | 2016-01-20 |
JP2018110235A (ja) | 2018-07-12 |
WO2014151264A1 (en) | 2014-09-25 |
CN105144345B (zh) | 2018-05-08 |
JP2016515308A (ja) | 2016-05-26 |
CN105144345A (zh) | 2015-12-09 |
US20140264263A1 (en) | 2014-09-18 |
EP2973664A4 (en) | 2016-08-10 |
EP2973664B1 (en) | 2020-10-14 |
US20170179336A1 (en) | 2017-06-22 |
CN108511567A (zh) | 2018-09-07 |
US9620676B2 (en) | 2017-04-11 |
US11251330B2 (en) | 2022-02-15 |
US20160225949A1 (en) | 2016-08-04 |
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