WO2008081758A1 - 窒化アルミニウムメタライズド基板の製造方法 - Google Patents

窒化アルミニウムメタライズド基板の製造方法 Download PDF

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Publication number
WO2008081758A1
WO2008081758A1 PCT/JP2007/074740 JP2007074740W WO2008081758A1 WO 2008081758 A1 WO2008081758 A1 WO 2008081758A1 JP 2007074740 W JP2007074740 W JP 2007074740W WO 2008081758 A1 WO2008081758 A1 WO 2008081758A1
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WO
WIPO (PCT)
Prior art keywords
aluminum nitride
silver
nitride substrate
metallic layer
copper
Prior art date
Application number
PCT/JP2007/074740
Other languages
English (en)
French (fr)
Inventor
Yasuyuki Yamamoto
Masakatsu Maeda
Osamu Yatabe
Original Assignee
Tokuyama Corporation
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Tokuyama Corporation filed Critical Tokuyama Corporation
Priority to US12/519,571 priority Critical patent/US20100015468A1/en
Priority to JP2008552103A priority patent/JPWO2008081758A1/ja
Priority to EP07851092A priority patent/EP2099068A4/en
Publication of WO2008081758A1 publication Critical patent/WO2008081758A1/ja

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    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K3/00—Apparatus or processes for manufacturing printed circuits
    • H05K3/38—Improvement of the adhesion between the insulating substrate and the metal
    • C—CHEMISTRY; METALLURGY
    • C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B41/00—After-treatment of mortars, concrete, artificial stone or ceramics; Treatment of natural stone
    • C04B41/009—After-treatment of mortars, concrete, artificial stone or ceramics; Treatment of natural stone characterised by the material treated
    • C—CHEMISTRY; METALLURGY
    • C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B41/00—After-treatment of mortars, concrete, artificial stone or ceramics; Treatment of natural stone
    • C04B41/45—Coating or impregnating, e.g. injection in masonry, partial coating of green or fired ceramics, organic coating compositions for adhering together two concrete elements
    • C04B41/52—Multiple coating or impregnating multiple coating or impregnating with the same composition or with compositions only differing in the concentration of the constituents, is classified as single coating or impregnation
    • C—CHEMISTRY; METALLURGY
    • C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B41/00—After-treatment of mortars, concrete, artificial stone or ceramics; Treatment of natural stone
    • C04B41/80—After-treatment of mortars, concrete, artificial stone or ceramics; Treatment of natural stone of only ceramics
    • C04B41/81—Coating or impregnation
    • C04B41/89—Coating or impregnation for obtaining at least two superposed coatings having different compositions
    • C04B41/90—Coating or impregnation for obtaining at least two superposed coatings having different compositions at least one coating being a metal
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/48—Manufacture or treatment of parts, e.g. containers, prior to assembly of the devices, using processes not provided for in a single one of the subgroups H01L21/06 - H01L21/326
    • H01L21/4814—Conductive parts
    • H01L21/4846—Leads on or in insulating or insulated substrates, e.g. metallisation
    • H01L21/4867—Applying pastes or inks, e.g. screen printing
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
    • H01L23/36—Selection of materials, or shaping, to facilitate cooling or heating, e.g. heatsinks
    • H01L23/373—Cooling facilitated by selection of materials for the device or materials for thermal expansion adaptation, e.g. carbon
    • H01L23/3735—Laminates or multilayers, e.g. direct bond copper ceramic substrates
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K3/00—Apparatus or processes for manufacturing printed circuits
    • H05K3/22—Secondary treatment of printed circuits
    • H05K3/24—Reinforcing the conductive pattern
    • H05K3/245—Reinforcing conductive patterns made by printing techniques or by other techniques for applying conductive pastes, inks or powders; Reinforcing other conductive patterns by such techniques
    • H05K3/247—Finish coating of conductors by using conductive pastes, inks or powders
    • H05K3/248—Finish coating of conductors by using conductive pastes, inks or powders fired compositions for inorganic substrates
    • C—CHEMISTRY; METALLURGY
    • C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B2111/00—Mortars, concrete or artificial stone or mixtures to prepare them, characterised by specific function, property or use
    • C04B2111/00474—Uses not provided for elsewhere in C04B2111/00
    • C04B2111/00844—Uses not provided for elsewhere in C04B2111/00 for electronic applications
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/095—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00 with a principal constituent of the material being a combination of two or more materials provided in the groups H01L2924/013 - H01L2924/0715
    • H01L2924/097—Glass-ceramics, e.g. devitrified glass
    • H01L2924/09701—Low temperature co-fired ceramic [LTCC]
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K1/00—Printed circuits
    • H05K1/02—Details
    • H05K1/03—Use of materials for the substrate
    • H05K1/0306—Inorganic insulating substrates, e.g. ceramic, glass
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K1/00—Printed circuits
    • H05K1/02—Details
    • H05K1/09—Use of materials for the conductive, e.g. metallic pattern
    • H05K1/092—Dispersed materials, e.g. conductive pastes or inks
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K2201/00—Indexing scheme relating to printed circuits covered by H05K1/00
    • H05K2201/03—Conductive materials
    • H05K2201/0332—Structure of the conductor
    • H05K2201/0335—Layered conductors or foils
    • H05K2201/0347—Overplating, e.g. for reinforcing conductors or bumps; Plating over filled vias
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K2201/00—Indexing scheme relating to printed circuits covered by H05K1/00
    • H05K2201/03—Conductive materials
    • H05K2201/0332—Structure of the conductor
    • H05K2201/0335—Layered conductors or foils
    • H05K2201/035—Paste overlayer, i.e. conductive paste or solder paste over conductive layer
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00—Stock material or miscellaneous articles
    • Y10T428/12—All metal or with adjacent metals
    • Y10T428/12493—Composite; i.e., plural, adjacent, spatially distinct metal components [e.g., layers, joint, etc.]
    • Y10T428/12535—Composite; i.e., plural, adjacent, spatially distinct metal components [e.g., layers, joint, etc.] with additional, spatially distinct nonmetal component
    • Y10T428/12576—Boride, carbide or nitride component

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  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Ceramic Engineering (AREA)
  • Materials Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Structural Engineering (AREA)
  • Organic Chemistry (AREA)
  • Manufacturing & Machinery (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Power Engineering (AREA)
  • Inorganic Chemistry (AREA)
  • Manufacturing Of Printed Wiring (AREA)
  • Laminated Bodies (AREA)
  • Ceramic Products (AREA)
  • Die Bonding (AREA)
  • Cooling Or The Like Of Semiconductors Or Solid State Devices (AREA)
  • Non-Insulated Conductors (AREA)
  • Manufacturing Of Electric Cables (AREA)

Abstract

　窒化アルミニウム焼結体基板上に高融点金属層を形成する工程（工程Ａ）、高融点金属層上に、ニッケル、銅、銅－銀、銅－錫、および金からなる群より選ばれる少なくとも１種からなる中間金属層をメッキ法により形成する工程（工程Ｂ）、および、中間金属層上に、ガラス成分の含有量が１質量％以下である銀ペーストを塗布し、非酸化性雰囲気中で焼成して銀を主成分とする表面金属層を形成する工程（工程Ｃ）、を備えて構成される窒化アルミニウムメタライズド基板の製造方法とすることで、表面に高融点金属層を有する窒化アルミニウム基板の当該高融点金属層上に、高い接合強度で接合したガラス成分を含まない銀層を、厚膜化が容易な銀ペーストを用いた厚膜法により形成することができる。
PCT/JP2007/074740 2006-12-28 2007-12-21 窒化アルミニウムメタライズド基板の製造方法 WO2008081758A1 (ja)

Priority Applications (3)

Application Number Priority Date Filing Date Title
US12/519,571 US20100015468A1 (en) 2006-12-28 2007-12-21 Method for manufacturing metallized aluminum nitride substrate
JP2008552103A JPWO2008081758A1 (ja) 2006-12-28 2007-12-21 窒化アルミニウムメタライズド基板の製造方法
EP07851092A EP2099068A4 (en) 2006-12-28 2007-12-21 PROCESS FOR THE PRODUCTION OF A METALLIZED ALUMINUM NITRIDE SUBSTRATE

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2006353863 2006-12-28
JP2006-353863 2006-12-28

Publications (1)

Publication Number Publication Date
WO2008081758A1 true WO2008081758A1 (ja) 2008-07-10

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ID=39588442

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PCT/JP2007/074740 WO2008081758A1 (ja) 2006-12-28 2007-12-21 窒化アルミニウムメタライズド基板の製造方法

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Country Link
US (1) US20100015468A1 (ja)
EP (1) EP2099068A4 (ja)
JP (1) JPWO2008081758A1 (ja)
WO (1) WO2008081758A1 (ja)

Cited By (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2011080147A (ja) * 2009-09-11 2011-04-21 Dowa Electronics Materials Co Ltd 接合材およびそれを用いた接合方法
WO2010091660A3 (de) * 2009-02-13 2011-06-03 Danfoss Silicon Power Gmbh Verfahren zur schaffung einer hochtemperatur- und temperaturwechselfesten verbindung eines baugruppen-halbleiters und eines halbleiterbausteins mit einem temperaturbeaufschlagenden verfahren
JP2012109314A (ja) * 2010-11-15 2012-06-07 Mitsubishi Materials Corp パワーモジュール用基板、冷却器付パワーモジュール用基板、パワーモジュール及びパワーモジュール用基板の製造方法
JP2012109315A (ja) * 2010-11-15 2012-06-07 Mitsubishi Materials Corp パワーモジュール用基板、冷却器付パワーモジュール用基板、パワーモジュールおよびパワーモジュール用基板の製造方法
JP2012111671A (ja) * 2010-11-26 2012-06-14 Tokuyama Corp 窒化アルミニウム焼結体加工物の製造方法
JP2016507902A (ja) * 2013-02-07 2016-03-10 セラムテック ゲゼルシャフト ミット ベシュレンクテル ハフツングＣｅｒａｍＴｅｃ ＧｍｂＨ セラミック基板に設けられたマルチレベル金属被覆部
JP2018037527A (ja) * 2016-08-31 2018-03-08 日本特殊陶業株式会社 配線基板及びその製造方法
CN109206139A (zh) * 2018-09-05 2019-01-15 东莞市正品五金电子有限公司 一种金属化陶瓷基板及其制备方法
JP2019145740A (ja) * 2018-02-23 2019-08-29 株式会社ノリタケカンパニーリミテド 放熱性基板

Families Citing this family (11)

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US7638346B2 (en) 2001-12-24 2009-12-29 Crystal Is, Inc. Nitride semiconductor heterostructures and related methods
US8545629B2 (en) 2001-12-24 2013-10-01 Crystal Is, Inc. Method and apparatus for producing large, single-crystals of aluminum nitride
CN101331249B (zh) 2005-12-02 2012-12-19 晶体公司 掺杂的氮化铝晶体及其制造方法
US9034103B2 (en) 2006-03-30 2015-05-19 Crystal Is, Inc. Aluminum nitride bulk crystals having high transparency to ultraviolet light and methods of forming them
US9771666B2 (en) 2007-01-17 2017-09-26 Crystal Is, Inc. Defect reduction in seeded aluminum nitride crystal growth
WO2008088838A1 (en) 2007-01-17 2008-07-24 Crystal Is, Inc. Defect reduction in seeded aluminum nitride crystal growth
JP5730484B2 (ja) 2007-01-26 2015-06-10 クリスタル アイエス インコーポレイテッド 厚みのある擬似格子整合型の窒化物エピタキシャル層
US8080833B2 (en) 2007-01-26 2011-12-20 Crystal Is, Inc. Thick pseudomorphic nitride epitaxial layers
CN105951177B (zh) 2010-06-30 2018-11-02 晶体公司 使用热梯度控制的大块氮化铝单晶的生长
US8962359B2 (en) 2011-07-19 2015-02-24 Crystal Is, Inc. Photon extraction from nitride ultraviolet light-emitting devices
CN108511567A (zh) 2013-03-15 2018-09-07 晶体公司 与赝配电子和光电器件的平面接触

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JPH11278941A (ja) 1997-10-30 1999-10-12 Sumitomo Electric Ind Ltd 窒化アルミニウム焼結体及びそのメタライズ基板
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JP2005191075A (ja) * 2003-12-24 2005-07-14 Ngk Spark Plug Co Ltd 中継基板及びその製造方法、中継基板付き基板
WO2006051881A1 (ja) 2004-11-12 2006-05-18 Tokuyama Corporation メタライズド窒化アルミニウム基板の製造方法及びそれによって得られる基板
EP1670295A2 (en) 2004-12-03 2006-06-14 Ngk Spark Plug Co., Ltd. Ceramic substrate, ceramic package for housing light emitting element

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JPH11278941A (ja) 1997-10-30 1999-10-12 Sumitomo Electric Ind Ltd 窒化アルミニウム焼結体及びそのメタライズ基板
JPH11260964A (ja) * 1998-03-13 1999-09-24 Toshiba Electronic Engineering Corp 半導体パッケージ
JP2001015635A (ja) 1999-06-29 2001-01-19 Kyocera Corp 光半導体素子収納用パッケージ
JP2002373960A (ja) * 2001-06-14 2002-12-26 Tokuyama Corp 素子接合用基板及びその製造方法
JP2004207258A (ja) 2002-10-28 2004-07-22 Kyocera Corp 発光素子収納用パッケージおよび発光装置
JP2005191075A (ja) * 2003-12-24 2005-07-14 Ngk Spark Plug Co Ltd 中継基板及びその製造方法、中継基板付き基板
WO2006051881A1 (ja) 2004-11-12 2006-05-18 Tokuyama Corporation メタライズド窒化アルミニウム基板の製造方法及びそれによって得られる基板
EP1670295A2 (en) 2004-12-03 2006-06-14 Ngk Spark Plug Co., Ltd. Ceramic substrate, ceramic package for housing light emitting element

Cited By (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2010091660A3 (de) * 2009-02-13 2011-06-03 Danfoss Silicon Power Gmbh Verfahren zur schaffung einer hochtemperatur- und temperaturwechselfesten verbindung eines baugruppen-halbleiters und eines halbleiterbausteins mit einem temperaturbeaufschlagenden verfahren
US9287232B2 (en) 2009-02-13 2016-03-15 Danfoss Silicon Power Gmbh Method for producing a high-temperature and temperature-change resistant connection between a semiconductor module and a connection partner
JP2011080147A (ja) * 2009-09-11 2011-04-21 Dowa Electronics Materials Co Ltd 接合材およびそれを用いた接合方法
JP2012109315A (ja) * 2010-11-15 2012-06-07 Mitsubishi Materials Corp パワーモジュール用基板、冷却器付パワーモジュール用基板、パワーモジュールおよびパワーモジュール用基板の製造方法
JP2012109314A (ja) * 2010-11-15 2012-06-07 Mitsubishi Materials Corp パワーモジュール用基板、冷却器付パワーモジュール用基板、パワーモジュール及びパワーモジュール用基板の製造方法
JP2012111671A (ja) * 2010-11-26 2012-06-14 Tokuyama Corp 窒化アルミニウム焼結体加工物の製造方法
JP2016507902A (ja) * 2013-02-07 2016-03-10 セラムテック ゲゼルシャフト ミット ベシュレンクテル ハフツングＣｅｒａｍＴｅｃ ＧｍｂＨ セラミック基板に設けられたマルチレベル金属被覆部
JP2018037527A (ja) * 2016-08-31 2018-03-08 日本特殊陶業株式会社 配線基板及びその製造方法
WO2018042918A1 (ja) * 2016-08-31 2018-03-08 日本特殊陶業株式会社 配線基板及びその製造方法
US11399426B2 (en) 2016-08-31 2022-07-26 Ngk Spark Plug Co., Ltd. Wiring board and method for manufacturing same
JP2019145740A (ja) * 2018-02-23 2019-08-29 株式会社ノリタケカンパニーリミテド 放熱性基板
JP7046643B2 (ja) 2018-02-23 2022-04-04 株式会社ノリタケカンパニーリミテド 放熱性基板
CN109206139A (zh) * 2018-09-05 2019-01-15 东莞市正品五金电子有限公司 一种金属化陶瓷基板及其制备方法

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Publication number Publication date
US20100015468A1 (en) 2010-01-21
EP2099068A4 (en) 2011-01-26
EP2099068A1 (en) 2009-09-09
JPWO2008081758A1 (ja) 2010-04-30

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