WO2010091660A3 - Verfahren zur schaffung einer hochtemperatur- und temperaturwechselfesten verbindung eines baugruppen-halbleiters und eines halbleiterbausteins mit einem temperaturbeaufschlagenden verfahren - Google Patents

Verfahren zur schaffung einer hochtemperatur- und temperaturwechselfesten verbindung eines baugruppen-halbleiters und eines halbleiterbausteins mit einem temperaturbeaufschlagenden verfahren Download PDF

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Publication number
WO2010091660A3
WO2010091660A3 PCT/DE2010/000127 DE2010000127W WO2010091660A3 WO 2010091660 A3 WO2010091660 A3 WO 2010091660A3 DE 2010000127 W DE2010000127 W DE 2010000127W WO 2010091660 A3 WO2010091660 A3 WO 2010091660A3
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Prior art keywords
connection
temperature
semiconductor module
semiconductor
producing
Prior art date
Application number
PCT/DE2010/000127
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English (en)
French (fr)
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WO2010091660A2 (de
Inventor
Mathias Kock
Ronald Eisele
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Danfoss Silicon Power Gmbh
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Publication date
Application filed by Danfoss Silicon Power Gmbh filed Critical Danfoss Silicon Power Gmbh
Priority to EP10710533A priority Critical patent/EP2396814A2/de
Priority to JP2011549430A priority patent/JP5731990B2/ja
Priority to US13/148,848 priority patent/US9287232B2/en
Priority to CN201080016442.5A priority patent/CN102396057B/zh
Publication of WO2010091660A2 publication Critical patent/WO2010091660A2/de
Publication of WO2010091660A3 publication Critical patent/WO2010091660A3/de

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Abstract

Verfahren zur Schaffung einer hochtemperatur- und temperaturwechselfesten Verbindung eines Baugruppen-Halbleiters und eines Halbleiterbausteins mit einem temperaturbeaufschlagenden Verfahren, bei dem auf die Bereiche der später zu verbindenden einzelnen Halbleiter-Bausteine eine Metallpulversuspension aufgebracht wird, die Suspensionsschicht unter Ausgasen der flüchtigen Bestandteile und unter Erzeugung einer porösen Schicht getrocknet wird, die poröse Schicht vorverdichtet wird, ohne dass eine vollständige, die Suspensionsschicht durchdringende Versinterung stattfindet, und zur Erlangung einer festen elektrisch und thermisch gut leitenden Verbindung eines Halbleiter-Bausteins auf einem Verbindungspartner aus der Gruppe : Substrat, weiterem Halbleiter oder Schaltungsträger, die Verbindung eine ohne Pressdruck durch Temperaturerhöhung erzeugte Sinterverbindung ist, die aus einer getrockneten Metallpulversuspension besteht, die in einem Vorverdichtungsschritt mit dem Verbindungspartner einen ersten transportfesten Kontakt mit dem Verbindungspartner erfahren hat, und drucklos unter Temperaturaussinterung verfestigt wurde.
PCT/DE2010/000127 2009-02-13 2010-02-04 Verfahren zur schaffung einer hochtemperatur- und temperaturwechselfesten verbindung eines baugruppen-halbleiters und eines halbleiterbausteins mit einem temperaturbeaufschlagenden verfahren WO2010091660A2 (de)

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EP10710533A EP2396814A2 (de) 2009-02-13 2010-02-04 Verfahren zur schaffung einer hochtemperatur- und temperaturwechselfesten verbindung eines baugruppen-halbleiters und eines halbleiterbausteins mit einem temperaturbeaufschlagenden verfahren
JP2011549430A JP5731990B2 (ja) 2009-02-13 2010-02-04 半導体モジュールと接続相手との間に高温および温度変化に強い接続を形成する方法
US13/148,848 US9287232B2 (en) 2009-02-13 2010-02-04 Method for producing a high-temperature and temperature-change resistant connection between a semiconductor module and a connection partner
CN201080016442.5A CN102396057B (zh) 2009-02-13 2010-02-04 用于在半导体模块和连接配合件之间产生耐高温和耐温度变化的连接的方法

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DE102009008926.8 2009-02-13
DE102009008926.8A DE102009008926B4 (de) 2009-02-13 2009-02-13 Verfahren zur Schaffung einer hochtemperatur- und temperaturwechselfesten Verbindung eines Halbleiterbausteins mit einem Verbindungspartner und einer Kontaktlasche unter Verwendung eines temperaturbeaufschlagenden Verfahrens

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CN102396057B (zh) 2014-04-02
JP5731990B2 (ja) 2015-06-10
US20120037688A1 (en) 2012-02-16
DE102009008926A1 (de) 2010-08-19
CN102396057A (zh) 2012-03-28
DE102009008926B4 (de) 2022-06-15
US9287232B2 (en) 2016-03-15
EP2396814A2 (de) 2011-12-21
JP2012517704A (ja) 2012-08-02

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