DE102015210061A1 - Verfahren zur elektrischen Kontaktierung eines Bauteils und Bauteilmodul - Google Patents

Verfahren zur elektrischen Kontaktierung eines Bauteils und Bauteilmodul Download PDF

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Publication number
DE102015210061A1
DE102015210061A1 DE102015210061.8A DE102015210061A DE102015210061A1 DE 102015210061 A1 DE102015210061 A1 DE 102015210061A1 DE 102015210061 A DE102015210061 A DE 102015210061A DE 102015210061 A1 DE102015210061 A1 DE 102015210061A1
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Prior art keywords
component
contact
contact piece
open
pore
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DE102015210061.8A
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English (en)
Inventor
Hubert Baueregger
Volkmar Sommer
Stefan Stegmeier
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Siemens AG
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Siemens AG
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Priority to DE102015210061.8A priority Critical patent/DE102015210061A1/de
Priority to CN201680031979.6A priority patent/CN107660308B/zh
Priority to EP16726297.1A priority patent/EP3281218A1/de
Priority to PCT/EP2016/061595 priority patent/WO2016193038A1/de
Priority to US15/578,867 priority patent/US11037862B2/en
Priority to KR1020177037745A priority patent/KR102062068B1/ko
Priority to JP2017562693A priority patent/JP6550477B2/ja
Publication of DE102015210061A1 publication Critical patent/DE102015210061A1/de
Ceased legal-status Critical Current

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Abstract

Bei dem Verfahren zur elektrischen Kontaktierung eines Bauteils mit zumindest einem Kontakt wird an den zumindest einen Kontakt zumindest ein offenporiges Kontaktstück galvanisch angebunden. Das Bauteilmodul ist mit einem Bauteil mit zumindest einem elektrisch leitfähigen Kontakt gebildet, an welchem zumindest ein offenporiges Kontaktstück galvanisch angebunden ist. Das Bauteilmodul ist insbesondere mittels eines vorgenannten Verfahrens gebildet.

Description

  • Die Erfindung betrifft ein Verfahren zur elektrischen Kontaktierung eines Bauteils mit einem elektrisch leitfähigen Kontakt sowie ein Bauteilmodul mit einem Bauteil mit zumindest einem elektrisch leitfähigen Kontakt.
  • Insbesondere in der Mikrosystemtechnik und der Leistungselektronik werden elektrische Kontakte von passiven Bauteilen wie beispielsweise Widerständen sowie Halbleiterbauteilen wie beispielsweise IGBTs, Dioden, MOSFETS, LEDs, und Substraten, wie beispielsweise FR4, DCB, ANM und Leadframes, elektrisch mittels einer Aufbau- und Verbindungstechnik miteinander verbunden.
  • Zur elektrischen Kontaktierung an Substrate sind Verfahren wie das Kleben mittels Leitkleber, das Löten von sog. „Preforms“, Löten mittels Lotpasten, sowie Diffusionslöten und Sintern bekannt. Beim Diffusionslöten und Sintern halten die Bauteilkontakte auch hohen Temperaturen stand.
  • Substratferne Kontaktierungen hingegen werden regelmäßig mit Verfahren wie die Wire-Bond-Technologie (auch: „Bändchen-Bond-Technologie“), die Druckkontakttechnologie mit Hilfe von Ausgleichselementen, etwa Molybdän, oder mit planaren Technologien (beispielsweise SiPLIT, Skin und DirectFET) realisiert Allerdings resultieren beim Kontaktieren mittels Druck- oder Niederdrucksintern verspannungs- und bruchanfällige elektrische Kontakte. Ferner sind solche Sinterverfahren zeitlich und apparativ aufwendig. Außerdem bedingen Löt- und Sinterverfahren nachteilig einen hohen Temperatureintrag in die zu kontaktierenden Bauelemente und können für wärmeempfindliche Bauteile daher nicht eingesetzt werden. Galvanik, Diffusionslöten und Sintern sind überdies sehr zeitaufwendige Verfahren.
  • Bei Klemm- oder Feder- oder Pressverbindungen hingegen erfordert die notwendige Fixierung insbesondere bei der Kontaktierung mehrerer Kontaktstellen nachteilig einen erheblichen Montageaufwand. Ferner sind diese Kontaktierungsverfahren infolge des Risikos der Beschädigung von Bauteilen aufgrund unregelmäßiger Druckkräfte nicht sehr verlässlich.
  • Die Kontaktierung mit verpressbaren Lotmaterialien (etwa „Heatspring“, zum Anmeldezeitpunkt vom Unternehmen Indium Cooperation vertrieben) hingegen resultiert in Kontakten mit geringer elektrischer Leitfähigkeit und ist zudem aufwendig und teuer.
  • Nachteilig an den bekannten Verfahren ist also, dass zur elektrischen Kontaktierung an die und fern der Substrate folgende Erfordernisse nur schwer zugleich erfüllbar sind:
    • – die gleichzeitige Herstellung mehrerer Kontakte
    • – ohne hohen Temperatureintrag
    • – ohne hohen Druckeintrag
    • – im Zeitbereich von Sekunden bis wenigen Minuten
    • – mit großen Kontaktflächen
    • – und hoher Temperaturbeständigkeit.
  • Es ist daher Aufgabe der Erfindung, ein Verfahren zur elektrischen Kontaktierung eines Bauteils mit zumindest einem leitfähigen Kontakt anzugeben, welches die vorgenannten Nachteile nicht aufweist. Insbesondere soll es mit dem erfindungsgemäßen Verfahren möglich sein, gleichzeitig mehrere Kontakte ohne hohen Temperatur- oder Druckeintrag schnell, großflächig und temperaturbeständig zu kontaktieren. Ferner ist es Aufgabe der Erfindung, ein Bauteilmodul mit derartig kontaktierten elektrischen Kontakten bereitzustellen.
  • Diese Aufgabe der Erfindung wird mit einem Verfahren mit den in Anspruch 1 angegebenen Merkmalen sowie mit einem Bauteilmodul mit den in Anspruch 15 angegebenen Merkmalen gelöst. Bevorzugte Weiterbildungen der Erfindung ergeben sich aus den zugehörigen Unteransprüchen, der nachfolgenden Beschreibung und der Zeichnung.
  • Das erfindungsgemäße Verfahren ist ein Verfahren zur elektrischen Kontaktierung eines Bauteils, welches zumindest einen elektrischen Kontakt aufweist. Bei dem erfindungsgemäßen Verfahren wird an den zumindest einen Kontakt zumindest ein offenporiges Kontaktstück galvanisch angebunden. Die Offenporigkeit des Kontaktstücks liefert zahlreiche Durchlässe für Elektrolytflüssigkeit, welche somit von außen an die Grenzfläche von Kontaktstück und elektrischem Kontakt des Bauteils gelangen kann. Idealerweise weist das offenporige Material des Kontaktstücks eine offenzellige Struktur auf, durch welche hindurch Elektrolytflüssigkeit besonders effizient passieren kann.
  • Das erfindungsgemäße Verfahren kann vorteilhaft ohne großen Temperatureintrag in zu kontaktierende Bauteile, welche zumindest potentiell wärmeanfällig sind, durchgeführt werden, da galvanische Verfahren regelmäßig bei verhältnismäßig niedrigen Temperaturen von höchstens 150°C durchgeführt werden.
  • Auch lassen sich mittels des erfindungsgemäßen Verfahrens hohe Druckbelastungen von Bauteilen leicht vermeiden, da zur Durchführung von galvanischen Verfahren keine oder allenfalls geringe Druckkräfte erforderlich sind.
  • Vorteilhafterweise lassen sich mittels des erfindungsgemäßen Verfahrens dauerelastische, federnde Kontaktierungen sehr leicht verwirklichen, da gerade offenporige Materialien regelmäßig elastische, federnde Materialeigenschaften aufweisen.
  • Vorteilhaft wird bei dem erfindungsgemäßen Verfahren ein solches Bauteil herangezogen, bei welchem der zumindest eine Kontakt, zumindest für sich betrachtet, ein Flachteil ist. Alternativ oder zusätzlich weist der Kontakt vorzugsweise eine Kontaktfläche auf, deren größte flächige Erstreckung größer ist als eine Erstreckung des Kontakts senkrecht zu dieser Kontaktfläche.
  • Gerade bei der Kontaktierung von Flächenkontakten erweist sich das erfindungsgemäße Verfahren als besonders vorteilhaft, da mittels dieses Verfahrens eine flächige Kontaktierung ohne Weiteres realisierbar ist. Insbesondere lassen sich auf diese Weise wärmespreizende Kontaktierungen leicht erzielen, da flächige Kontakte bereits aufgrund der räumlichen Geometrie eine starke Wärmespreizung bedingen. Auch die zur Wärmespreizung erforderliche Wärmeleitfähigkeit ist regelmäßig gegeben, da eine zur Kontaktierung erforderliche gute elektrische Leitfähigkeit sowie eine für eine Wärmespreizung wünschenswerte gute thermische Leitfähigkeit für typische Materialien regelmäßig miteinander einhergehen.
  • Geeigneterweise wird bei dem erfindungsgemäßen Verfahren als zumindest ein Kontaktstück ein elektrisch leitfähiges Kontaktstück herangezogen. In dieser Weiterbildung des erfindungsgemäßen Verfahrens lassen sich die Kontaktierungen sehr rasch realisieren, da lediglich eine elektrisch leitende Anbindung mittels des an der Kontaktstelle abgeschiedenen Materials bewerkstelligt werden muss. Größere Materialmengen abzuscheiden ist in dieser Weiterbildung des erfindungsgemäßen Verfahrens entbehrlich, da das Kontaktstück selbst bereits einen großflächigen Leitungspfad darstellt.
  • In einer vorteilhaften Weiterbildung des erfindungsgemäßen Verfahrens ist das zumindest eine, offenporige Kontaktstück aus oder mit porösem Material gebildet.
  • Vorteilhafterweise ist bei dem erfindungsgemäßen Verfahren das zumindest eine offenporige Kontaktstück aus oder mit Metall, insbesondere Nickel und/oder Silber und/oder Gold und/oder Zinn und/oder Kupfer, gebildet.
  • Zweckmäßig ist bei dem erfindungsgemäßen Verfahren das zumindest ein offenporiges Kontaktstück mit einer gewebeartigen und/oder schaumartigen und/oder netzartigen Struktur gebildet.
  • In einer vorteilhaften Weiterbildung des erfindungsgemäßen Verfahrens wird das zumindest eine offenporige Kontaktstück bei einer solchen Temperatur galvanisch an den Kontakt angebunden, welche höchstens 100°C, vorzugsweise höchstens 60°C, insbesondere höchstens 20°C und zweckmäßig höchstens 5°C beträgt und/oder von der Betriebstemperatur des Bauteils um höchstens 20°C, vorzugsweise um höchstens 10°C, insbesondere um höchstens 5°C und idealerweise um höchstens 2°C, abweicht. Beim Betreiben bei niedrigen Temperaturen lässt sich der Temperatureintrag in das Bauteil bei der Durchführung des Verfahrens ganz besonders gering halten. Gerade für temperaturanfällige Komponenten ist diese Weiterbildung des erfindungsgemäßen Verfahrens besonders vorzuziehen. Ferner ist das Bauteil bei möglichst geringem Temperaturunterschied von galvanischer Anbindung und späterer Betriebstemperatur besonders spannungsarm angebunden. Bei vorgesehenen Betriebstemperaturen des Bauteils bei Temperaturen größer als 100°C lässt sich die galvanische Anbindung bei Temperaturen von mehr als 100°C durchführen, wobei dann salzschmelzbasierte Metallabscheidungsverfahren zweckmäßigerweise zum Einsatz kommen.
  • Geeigneterweise wird bei dem erfindungsgemäßen Verfahren das zumindest ein offenporiges Kontaktstück mittels eines elektrochemischen Galvanik-Verfahrens galvanisch angebunden.
  • In dieser Weiterbildung des erfindungsgemäßen Verfahrens wird vorteilhaft ein elektrisch leitfähiges Kontaktstück herangezogen, wobei mittels des elektrochemischen Galvanik-Verfahrens Metall auf den Kontaktstück abgeschieden wird. Zweckmäßig wird bei dem erfindungsgemäßen Verfahren eine Anode genutzt, die mit einem solchen Metall gebildet ist, welches bei dem Verfahren auf dem Kontaktstück abgeschieden werden soll. Vorteilhaft ist dieses Metall Kupfer. Alternativ und ebenfalls vorteilhaft wird als Metall Nickel und/oder Silber und/oder Gold und/oder Zinn verwendet.
  • Alternativ und ebenfalls bevorzugt wird bei dem erfindungsgemäßen Verfahren das zumindest eine offenporige Kontaktstück mittels eines außenstromfreien Verfahrens galvanisch angebunden, insbesondere mittels Austausch-Metallisierung und/oder mittels Reduktions-Metallisierung und/oder mittels Kontakt-Metallisierung. Vorteilhafterweise kann beim außenstromfreien Galvanik-Verfahren das Abscheiden von Metall bei einer Betriebstemperatur erfolgen, welche etwa gleich der späteren Betriebstemperatur des Bauteils ist. Dadurch werden mechanische Spannungen verringert oder vermieden. Ferner kann auch ein Korrosionsschutz verwirklicht werden, insbesondere durch das Galvanisieren von Nickel oder Nickel und Gold. Ein weiterer Vorteil des außenstromfreien Verfahrens ist es, dass das Bauteil selbst nicht elektrisch kontaktiert sein muss. Somit sind aufwendige Abscheidungen von Saatschichten (engl. „Seed layers“) und Ankontaktiermaßnahmen nicht erforderlich.
  • Zweckmäßig wird in einer vorteilhaften Weiterbildung des erfindungsgemäßen Verfahrens ein Kontaktstück herangezogen, welches zunächst als solches keinen durchgängigen Leitungspfad ausbildet, streng genommen also nicht makroskopisch leitfähig ist. Vielmehr weist das Kontaktstück eine Vielzahl von Metallinseln auf, welche gewissermaßen als Metallisierungsinseln während des, zweckmäßig außenstromfreien, Galvanisierungsverfahrens erst einen durchgängigen Leitungspfad ausbilden.
  • Vorzugsweise wird bei dem erfindungsgemäßen Verfahren das Bauteil mittels des Kontaktstücks mit einem weiteren Bauelement und/oder Stromleiter und/oder mit einem Substrat kontaktiert, wonach das Kontaktstück und/oder das Bauteil und/oder das weitere Bauelement und/oder Stromleiter und/oder Substrat mit einer elektrischen Isolationsschicht versehen werden.
  • Vorteilhaft wird bei dem erfindungsgemäßen Verfahren die Isolationsschicht mittels Gießen und/oder Molden und/oder aus oder mit Siloxanen und/oder Polymeren gebildet.
  • In einer vorteilhaften Weiterbildung des erfindungsgemäßen Verfahrens wird als Bauteil ein Leistungsbauteil herangezogen.
  • Geeigneterweise wird bei dem erfindungsgemäßen Verfahren als Bauteil ein Bauteil mit mindestens einem Transistor, vorzugsweise einem Bipolartransistor mit isolierter Gate-Elektrode (engl. „insulated-gate bipolar transistor“: IGBT) herangezogen.
  • Bevorzugt wird bei dem erfindungsgemäßen Verfahren ein Bauteil mit zwei Kontakten, vorzugsweise an einander abgewandten Seiten, insbesondere Flachseiten, des Bauteils, herangezogen, wobei zumindest ein offenporiges Kontaktstück an diese Kontakte galvanisch angebunden wird, insbesondere zumindest ein offenporiges Kontaktstück je Kontakt, vorzugsweise jeweils nach einem erfindungsgemäßen Verfahren wie zuvor beschrieben.
  • Das erfindungsgemäße Bauteilmodul weist ein Bauteil mit zumindest einem elektrischen Kontakt auf. An dem elektrischen Kontakt ist erfindungsgemäß zumindest ein offenporiges Kontaktstück galvanisch angebunden.
  • Besonders vorteilhaft ist das erfindungsgemäße Bauteilmodulmittels eines erfindungsgemäßen Verfahrens wie oben beschrieben gebildet.
  • In einer Weiterbildung des erfindungsgemäßen Bauteilmoduls ist dieses stapelartig in der Art eines Stacks realisiert, wobei die Ebenen dieses Stacks mittels Leiterplatten und/oder Substraten gebildet sind, an welchen Bauteile mittels Kontaktstücken angebunden sind. Zweckmäßig sind dazu die Kontakte von Bauteilen sämtlicher Ebenen zeitgleich mittels des erfindungsgemäßen Verfahrens kontaktiert.
  • In einer weiteren Weiterbildung des erfindungsgemäßen Bauteilmoduls sind mehrere Bauteile gemeinsam an einer Flachseite eines Substrats oder einer Leiterplatte an dieses oder diese angebunden. Auch in dieser Weiterbildung können die mehreren Bauteile zeitgleich mittels des erfindungsgemäßen Verfahrens kontaktiert.
  • Nachfolgend wird die Erfindung anhand eines in der Zeichnung dargestellten Ausführungsbeispiels näher erläutert. Es zeigen:
  • 1 eine Anordnung eines Leistungsbauteils an einem Keramiksubstrat vor der Durchführung eines ersten Ausführungsbeispiels des erfindungsgemäßen Verfahrens zur Herstellung eines ersten Ausführungsbeispiels eines erfindungsgemäßen Bauteilmoduls in einer Prinzipskizze im Querschnitt,
  • 2 die Anordnung des Leistungsbauteils gem. 1 bei einer Durchführung eines ersten Schrittes des erfindungsgemäßen Verfahrens in einer Prinzipskizze im Querschnitt,
  • 3 die Anordnung des Leistungsbauteils gem. 1 nach Durchführung des ersten Schrittes des erfindungsgemäßen Verfahrens in einer Prinzipskizze im Querschnitt,
  • 4 eine Ausschnittsvergrößerung (A) aus 3 zusammen mit einer Einzelheit (B) aus dieser Ausschnittsvergrößerung,
  • 5 das erfindungsgemäße Bauteilmodul nach den Verfahrensschritten gemäß der 1 bis 4 in einer Prinzipskizze im Querschnitt,
  • 6 ein weitere einer Anordnung eines Leistungsbauteils an einem Keramiksubstrat vor der Durchführung eines weiteren Ausführungsbeispiels des erfindungsgemäßen Verfahrens zur Herstellung eines weiteren Ausführungsbeispiels des erfindungsgemäßen Bauteilmoduls in einer Prinzipskizze im Querschnitt,
  • 7 die Anordnung des Leistungsbauteils gem. 6 bei einer Durchführung eines ersten Schrittes des weiteren Ausführungsbeispiels des erfindungsgemäßen Verfahrens in einer Prinzipskizze im Querschnitt sowie
  • 8 das weitere Ausführungsbeispiel des erfindungsgemäßen Bauteilmoduls nach den Verfahrensschritten gemäß den 6 und 7 in einer Prinzipskizze im Querschnitt.
  • Das in 1 dargestellte Leistungsbauteil 10 ist ein Bipolartransistor mit isolierter Gate-Elektrode (engl. „insulated-gate bipolar transistor“: IGBT) und weist eine erste 20 und eine zweite Flachseite 30 auf, welche voneinander abgewandt sind. Entlang der ersten 20 und zweiten Flachseite 30 erstrecken sich dünnschichtartige Flächenkontakte 40, 50 des Leistungsbauteils 10, welche als flächige Chipmetallisierungen ausgebildet sind. Im dargestellten Ausführungsbeispiel besteht der in 1 oberseitig angeordnete Flächenkontakt 40 des Leistungsbauteils 10 aus Kupfer, während der unterseitig angeordnete Flächenkontakt 50 des Leistungsbauteils 10 aus Silber besteht. Grundsätzlich können oberseitige Flächenkontakte auch aus oder mit Silber oder aus oder mit AlSiCu, sonstigen Metallen oder anderen elektrisch leitenden Materialien gebildet sein, während die unterseitigen Flächenkontakte auch aus oder mit Gold oder anderen Metallen oder anderen elektrisch leitenden Materialien gebildet sein können.
  • Zur Kontaktierung dieser Flächenkontakte 40, 50 werden an den Flächenkontakten 40, 50 Kontaktstücke 60, 70 offenporigen Materials platziert, welche sich im Wesentlichen flächig entlang der Flächenkontakte 40, 50 erstrecken. Im dargestellten Ausführungsbeispiel sind die Kontaktstücke 60, 70 leitfähig ausgebildet und als Kupferschwämme realisiert. Es versteht sich, dass in weiteren, nicht eigens dargestellten Ausführungsbeispielen, welche im Übrigen den anhand der Figuren erläuterten Ausführungsbeispielen entsprechen, die offenporigen Kontaktstücke 60, 70 auch aus sonstigen offenporigen leitfähigen Materialien bestehen können, etwa als Netze oder Gewebe oder sonstigen porösen Strukturen ausgebildete Aluminium-, Ti- oder aus oder mit sonstigen Metallen gebildete Kontaktstücke. Beispielsweise können auch mit leitfähigen Materialien bereichsweise beschichtete oder mit leitfähigen Partikeln versetzte Polymerschwämme als Kontaktstücke herangezogen werden.
  • Eines der Flächenkontakte 50 des Leistungsbauteils 10 ist einem weiteren Flächenkontakt 80 eines Keramiksubstrats 90 mit einem Keramikkern 100 aus Aluminiumnitrid (AlN) zugewandt. Grundsätzlich kann der Keramikkern 100 in weiteren, nicht eigens gezeigten Ausführungsbeispielen aus einem anderen keramischen Material, oder aber aus Leiterplattenmaterialien wie FR 4 oder anderen Trägern aus Silikon und/oder Epoxy bestehen. Der weitere Flächenkontakt 80 des Keramiksubstrats 90 ist als oberflächliche Substratmetallisierung, im dargestellten Ausführungsbeispiel als kupferne Substratmetallisierung, ausgebildet. Der dem Keramiksubstrat 90 zugewandte Flächenkontakt 50 des Leistungsbauteils 10 und der weitere Flächenkontakt 80 des Keramiksubstrats 90 erstrecken sich zueinander parallel und bilden folglich einen ebenen Spalt aus. Das an jenem dem Keramiksubstrat 90 zugewandten Flächenkontakt 50 angeordnete Kontaktstück 70 füllt diesen ebenen Spalt vollständig aus und liegt vollflächig an diesem Flächenkontakt 50 des Leistungsbauteils 10 sowie an dem weiteren Flächenkontakt 80 des Keramiksubstrats 90 an. Das Kontaktstück 70 ist somit zur Kontaktierung von Leistungsbauteil 10 und Keramiksubstrat 90 angeordnet.
  • Die offenporigen Kontaktstücke 60, 70 werden in einem weiteren Verfahrensschritt mit Elektroden 110, 120 kontaktiert (2). Dazu wird einerseits eine erste Elektrode 110 an demjenigen Kontaktstück 60, welches an jenem dem Keramiksubstrat 90 abgewandten Flächenkontakt 40 angeordnet ist, an dessen – dem Leistungsbauteil 10 fernen – Außenseite 130 elektrisch kontaktiert. Eine weitere, zweite, Elektrode 120 wird an demjenigen kupfernen Flächenkontakt 80 elektrisch kontaktiert, welche an dem zwischen Leistungsbauteil 10 und Keramiksubstrat 90 befindlichen Kontaktstück befindlich ist. Die erste Elektrode 110 wirkt zugleich als Fixierungselement, welches die Fixierung des aus Leistungsbauteil 10, Keramiksubstrat 90 und Kontaktstücken 60, 70 gebildeten Leistungsmoduls während des erfindungsgemäßen Verfahrens gewährleistet. Dazu wird die erste Elektrode 110 mittels einer nicht im Einzelnen gezeigten Spannvorrichtung in Richtung des Keramiksubstrats 90 kraftbeaufschlagt. Alternativ kann in einem weiteren Ausführungsbeispiel, welches im Übrigen dem dargestellten Ausführungsbeispiel entspricht, die Elektrode 110 nicht als Fixierungselement ausgebildet sein, wobei die Fixierung der Kontaktstücke 60, 70 stattdessen mittels eines leitfähigen Klebers erfolgt. Infolge der Leitfähigkeit des Klebers lassen sich die Kontaktstücke 60, 70 einfach elektrisch kontaktieren.
  • Infolge der Kontaktierung der offenporigen Kontaktstücke mit Elektroden 110, 120 scheidet sich mittels – an sich bekannter – elektrochemischer Galvanisierung Metall, im dargestellten Ausführungsbeispiel Kupfer, im Bereich zwischen den offenporigen Kontaktstücken 60, 70 und den Flächenkontakten 40, 50, 80 ab (3). Im dargestellten Ausführungsbeispiel bildet das abgeschiedene Material Schichten 132, 134, 136, welche sich flächig entlang der Chipmetallisierungen oder Keramiksubstratmetallisierungen sowie den Kontaktstücken 60, 70 erstrecken. Infolge dieser Abscheidung verbinden sich zugleich jeweils die offenporigen Kontaktstücke 60, 70 mit dem Leistungsbauteil 10. Sämtliche Kontaktstücke 60, 70 verbinden sich dabei zeitgleich mit den jeweiligen Kontakten 40, 50, 80, an welchen sie jeweils anliegen.
  • Ein nach dem zuvor beschriebenen Ausführungsbeispiel realisierter Bauteilkontakt von Leistungsbauteil 10, Kontaktstück 70 und Keramiksubstrat 90 ist in 4A vergrößert in einem realitätstreuen Ausschnitt gezeigt. Der Ausschnitt zeigt die Anbindung des zwischen Leistungsbauteil 10 und Keramiksubstrat 90 befindlichen Kontaktstücks 70. Die Einzelheit 4B stellt die Anbindung des Kontaktstücks 70 an das Leistungsbauteil 10 dar. Es ist erkennbar, dass zwischen der dem Leistungsbauteil 10 zugewandten Seite 140 des Kontaktstücks 70 und der dem Kontaktstück 70 zugewandten Seite 150 der Chipmetallisierung des Leistungsbauteils 10 im Verlauf der galvanischen Anbindung ein Kornwachstum von zwischenliegendem Kupfer stattgefunden hat, welcher den zwischenliegenden Bereich 160 metallisch ausfüllt.
  • In einem nachfolgenden Bearbeitungsschritt werden die aus Keramiksubstrat 90 und ankontaktiertem Leistungsbauteil 10 gebildeten erfindungsgemäßen Leistungsmodule mit Isoliermaterial 170, im dargestellten Fall ein Siloxan, umhüllt (5). In weiteren, nicht eigens dargestellten Ausführungsbeispielen, welche im Übrigen den dargestellten entsprechen, wird ein anderes Isoliermaterial 170 genutzt, beispielsweise ein Polymer.
  • In einem weiteren in den 6 bis 8 dargestellten Ausführungsbeispiel wird anstelle eines elektrochemischen Galvanisierungsverfahrens ein außenstromfreies Galvanisierungsverfahren genutzt. Dementsprechend unterscheidet sich dieses Ausführungsbeispiel vom in den 1 bis 5 gezeigten Ausführungsbeispiel darin, dass – wie an sich bekannt – eine Kontaktierung mit Elektroden 110, 120 für außenstromfreie Galvanisierungsverfahren nicht erforderlich ist. Folglich ist anstelle der ersten Elektrode 110 lediglich ein Fixierungselement 180 vorhanden (6). Das Fixierungselement 180 ist mittels einer nicht im Einzelnen gezeigten Spannvorrichtung in Richtung des Keramiksubstrats 90 kraftbeaufschlagt, sodass das Leistungsmodul während des Verfahrens zusammengehalten wird. Alternativ ist in einem weiteren Ausführungsbeispiel, welches im Übrigen dem dargestellten Ausführungsbeispiel entspricht, kein Fixierungselement 180 vorgesehen, wobei die Fixierung der Kontaktstücke 60‘, 70‘ stattdessen mittels eines Klebers (etwa mittels eines kleinen Klebepunktes) erfolgt.
  • Mittels des außenstromfreien Galvanisierungsverfahrens scheidet sich mittels an sich bekannter Weise Metall, im dargestellten Ausführungsbeispiel Kupfer, im Bereich zwischen den offenporigen Kontaktstücken 60‘, 70‘ und dem Leistungsbauteil 10 ab (7). Im dargestellten Ausführungsbeispiel bildet das abgeschiedene Material Schichten, welche sich flächig entlang der Chipmetallisierungen oder Keramiksubstratmetallisierungen sowie den Kontaktstücken 60‘, 70‘ erstrecken. Infolge dieser Abscheidung verbinden sich zugleich jeweils die offenporigen Kontaktstücke 60‘, 70‘ mit dem Leistungsbauteil 10.
  • In einem weiteren Ausführungsbeispiel, welches im Übrigen dem anhand der 6 bis 8 erläuterten Ausführungsbeispiel entspricht, wird ein Kontaktstück herangezogen, welches zunächst als solches keinen durchgängigen Leitungspfad ausbildet. Vielmehr weist das Kontaktstück eine Vielzahl von kupfernen Metallinseln auf, welche gewissermaßen als Metallisierungsinseln während des außenstromfreien Galvanisierungsverfahrens wie zuvor beschrieben erst einen durchgängigen Leitungspfad ausbilden.
  • In einem nachfolgenden Bearbeitungsschritt werden die aus Keramiksubstrat 90 und ankontaktiertem Leistungsbauteil 10 gebildeten erfindungsgemäßen Leistungsmodule mit Isoliermaterial 170, im dargestellten Fall ein Siloxan, umhüllt (8). In weiteren, nicht eigens dargestellten Ausführungsbeispielen, welche im Übrigen den dargestellten entsprechen, wird ein anderes Isoliermaterial 170 genutzt, beispielsweise ein Polymer.
  • Analog zu den oben beschriebenen Ausführungsbeispielen kann in weiteren Ausführungsbeispielen das galvanisierte Metall anstelle von Kupfer auch ein anderes Metall sein.
  • In weiteren, nicht eigens dargestellten Ausführungsbeispielen kann ein erfindungsgemäßes Leistungsmodul stapelartig mit mehreren gestapelten Keramik- oder sonstigen Substraten in der Art eines Stacks realisiert sein. Elektronische Kontaktierungen können in mehreren Ebenen zeitgleich mittels des erfindungsgemäßen Verfahrens durchgeführt sein. Alternativ oder zusätzlich können auch in einer einzelnen Ebene mehrere Bauteile mittels des erfindungsgemäßen Verfahrens zeitgleich kontaktiert sein.

Claims (16)

  1. Verfahren zur elektrischen Kontaktierung eines Bauteils (10) mit zumindest einem elektrischen Kontakt (40, 50), bei welchem an den zumindest einen Kontakt (40, 50) zumindest ein offenporiges Kontaktstück (60, 70, 60‘, 70‘) galvanisch angebunden wird.
  2. Verfahren nach Anspruch 1, bei welchem ein solches Bauteil (10) herangezogen wird, bei welchem der zumindest eine Kontakt (40, 50), zumindest für sich betrachtet, ein Flachteil ist und/oder eine Kontaktfläche aufweist, deren größte flächige Erstreckung größer ist als eine Erstreckung des Kontakts senkrecht zur Kontaktfläche.
  3. Verfahren nach Anspruch 1, bei welchem als das zumindest eine Kontaktstück (60, 70, 60‘, 70‘) ein elektrisch leitfähiges Kontaktstück (60, 70, 60‘, 70‘) herangezogen wird.
  4. Verfahren nach einem der vorhergehenden Ansprüche, bei welchem das zumindest eine offenporige Kontaktstück (60, 70, 60‘, 70‘) aus oder mit porösem Material gebildet ist.
  5. Verfahren nach einem der vorhergehenden Ansprüche, bei welchem das zumindest eine offenporige Kontaktstück (60, 70, 60‘, 70‘) aus oder mit Metall, insbesondere Nickel und/oder Silber und/oder Gold und/oder Zinn und/oder Kupfer, gebildet ist.
  6. Verfahren nach einem der vorhergehenden Ansprüche, bei welchem das zumindest eine offenporige Kontaktstück (60, 70, 60‘, 70‘) mit einer gewebeartigen und/oder schaumartigen und/oder netzartigen Struktur gebildet ist.
  7. Verfahren nach einem der vorhergehenden Ansprüche, bei welchem das zumindest eine offenporige Kontaktstück (60, 70, 60‘, 70‘) bei einer solchen Temperatur galvanisch an den Kontakt (40, 50) angebunden wird, welche höchstens 100°C, vorzugsweise höchstens 60 °C, zweckmäßig höchtens 20 °C und idealerweise höchstens 5° C beträgt und/oder von der Betriebstemperatur des Bauteils um höchstens 50 °C, vorzugsweise um höchstens 20 °C, insbesondere um höchstens 10 °C und idealerweise um höchstens 5 °C, vorzugsweise höchstens 2°C, abweicht.
  8. Verfahren nach einem der vorhergehenden Ansprüche, bei welchem das zumindest eine offenporige Kontaktstück (60, 70, 60‘, 70‘) mittels eines elektrochemischen Galvanik-Verfahrens galvanisch angebunden wird.
  9. Verfahren nach einem der vorhergehenden Ansprüche, bei welchem das zumindest eine offenporige Kontaktstück (60, 70, 60‘, 70‘) mittels eines außenstromfreien Verfahrens galvanisch angebunden wird, insbesondere mittels Austausch- Metallisierung und/oder mittels Reduktions-Metallisierung und/oder mittels Kontakt-Metallisierung.
  10. Verfahren nach einem der vorhergehenden Ansprüche, bei welchem das Bauteil (10) mittels des Kontaktstücks (60, 70, 60‘, 70‘) mit einem weiteren Bauelement und/oder Stromleiter und/oder mit einem Substrat (90) kontaktiert wird, wonach das Kontaktstück (60, 70, 60‘, 70‘) und/oder das Bauteil (10) und/oder das weitere Bauelement und/oder Stromleiter und/oder Substrat (90) mit einer elektrischen Isolationsschicht (170) versehen werden.
  11. Verfahren nach dem vorhergehenden Anspruch, bei welchem die Isolationsschicht (170) mittels Gießen und/oder Molden und/oder aus oder mit Siloxanen und/oder Polymeren gebildet wird.
  12. Verfahren nach einem der vorhergehenden Ansprüche, bei welchem als Bauteil (10) ein Leistungsbauteil herangezogen wird.
  13. Verfahren nach einem der vorhergehenden Ansprüche, bei welchem als Bauteil (10) ein Bauteil mit mindestens einem Transistor, vorzugsweise einem IGBT, herangezogen wird.
  14. Verfahren nach einem der vorhergehenden Ansprüche, bei welchem ein Bauteil (10) mit zwei Kontakten (40, 50), vorzugsweise an einander abgewandten Seiten, insbesondere Flachseiten, des Bauteils (10), herangezogen wird, wobei je Kontakt (40, 50) zumindest ein offenporiges Kontaktstück (60, 70, 60‘, 70‘) an dieser galvanisch angebunden wird, vorzugsweise nach einem Verfahren nach den Ansprüchen 2 bis 12.
  15. Bauteilmodul mit einem Bauteil mit zumindest einer elektrischen Kontakt (40, 50), an welchem zumindest ein offenporiges Kontaktstück (60, 70, 60‘, 70‘) galvanisch angebunden ist.
  16. Bauteilmodul nach dem vorhergehenden Anspruch, welches mittels eines Verfahrens nach einem der vorhergehenden Ansprüche gebildet ist.
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Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE102017211619A1 (de) 2017-02-08 2018-08-09 Siemens Aktiengesellschaft Verfahren zur elektrischen Kontaktierung und Leistungsmodul
DE102020134563A1 (de) 2020-12-22 2022-06-23 Danfoss Silicon Power Gmbh Leistungsmodul und Verfahren zur Herstellung eines Leistungsmoduls

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE102017203132A1 (de) * 2017-02-06 2018-08-09 Siemens Aktiengesellschaft Leistungsmodul
WO2018145968A1 (de) * 2017-02-09 2018-08-16 Siemens Aktiengesellschaft Leistungsmodul

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2010091660A2 (de) * 2009-02-13 2010-08-19 Danfoss Silicon Power Gmbh Verfahren zur schaffung einer hochtemperatur- und temperaturwechselfesten verbindung eines baugruppen-halbleiters und eines halbleiterbausteins mit einem temperaturbeaufschlagenden verfahren
DE102007055017B4 (de) * 2007-11-14 2010-11-04 Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. Verfahren zum Verbinden zweier Fügeflächen und Bauteil mit zwei verbundenen Fügeflächen

Family Cites Families (19)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CH387809A (de) * 1961-11-17 1965-02-15 Bbc Brown Boveri & Cie Lötverbindung an einem Halbleiterelement
JPS5674932A (en) * 1979-11-22 1981-06-20 Hitachi Ltd Semiconductor device and preparation method thereof
JPS5732422A (en) * 1980-08-06 1982-02-22 Seiko Epson Corp Electrochromic display device
DE4328466C1 (de) 1993-08-24 1995-04-13 Siemens Ag Siloxanhaltiges Gießharzsystem
JP4259018B2 (ja) * 2002-01-22 2009-04-30 トヨタ自動車株式会社 半導体装置とその製造方法
JP4312465B2 (ja) 2003-01-23 2009-08-12 株式会社荏原製作所 めっき方法およびめっき装置
DE102004009296B4 (de) * 2004-02-26 2011-01-27 Siemens Ag Verfahren zum Herstellen einer Anordnung eines elektrischen Bauelements
JP2006010843A (ja) 2004-06-23 2006-01-12 Brother Ind Ltd 記録媒体の記録材除去装置
JP4596875B2 (ja) * 2004-10-06 2010-12-15 関西電力株式会社 樹脂で被覆した高耐電圧半導体装置及びその製造方法
US7453139B2 (en) 2005-12-27 2008-11-18 Tessera, Inc. Compliant terminal mountings with vented spaces and methods
JP4997837B2 (ja) 2006-06-12 2012-08-08 日産自動車株式会社 半導体素子の接合方法および半導体装置
US7626262B2 (en) * 2006-06-14 2009-12-01 Infineon Technologies Ag Electrically conductive connection, electronic component and method for their production
JP2009164240A (ja) * 2007-12-28 2009-07-23 Panasonic Corp 半導体装置
JP2010106223A (ja) * 2008-10-31 2010-05-13 Dow Corning Toray Co Ltd 電気・電子部品用封止・充填剤および電気・電子部品
DE102008055134A1 (de) * 2008-12-23 2010-07-01 Robert Bosch Gmbh Elektrisches oder elektronisches Verbundbauteil sowie Verfahren zum Herstellen eines elektrischen oder elektronischen Verbundbauteils
DE102011106294A1 (de) * 2011-07-01 2013-01-03 Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. Verfahren zur wiederlösbaren, stoffschlüssigen Verbindung mindestens zweier Körper und dessen Verwendung sowie entsprechende Verbundsysteme
JP2014097529A (ja) * 2012-10-18 2014-05-29 Fuji Electric Co Ltd 発泡金属による接合方法、半導体装置の製造方法、半導体装置
JP6551909B2 (ja) * 2013-10-09 2019-07-31 学校法人早稲田大学 電極接続方法及び電極接続構造
WO2015086184A1 (en) 2013-12-13 2015-06-18 Abb Technology Ag Semiconductor stack arrangement and semiconductor module

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE102007055017B4 (de) * 2007-11-14 2010-11-04 Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. Verfahren zum Verbinden zweier Fügeflächen und Bauteil mit zwei verbundenen Fügeflächen
WO2010091660A2 (de) * 2009-02-13 2010-08-19 Danfoss Silicon Power Gmbh Verfahren zur schaffung einer hochtemperatur- und temperaturwechselfesten verbindung eines baugruppen-halbleiters und eines halbleiterbausteins mit einem temperaturbeaufschlagenden verfahren

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE102017211619A1 (de) 2017-02-08 2018-08-09 Siemens Aktiengesellschaft Verfahren zur elektrischen Kontaktierung und Leistungsmodul
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