KR20180014081A - 개방-세공 콘택 피스의 갈바닉 연결에 의하여 컴포넌트를 전기적으로 콘택팅하기 위한 방법, 및 대응하는 컴포넌트 모듈 - Google Patents

개방-세공 콘택 피스의 갈바닉 연결에 의하여 컴포넌트를 전기적으로 콘택팅하기 위한 방법, 및 대응하는 컴포넌트 모듈 Download PDF

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KR20180014081A
KR20180014081A KR1020177037745A KR20177037745A KR20180014081A KR 20180014081 A KR20180014081 A KR 20180014081A KR 1020177037745 A KR1020177037745 A KR 1020177037745A KR 20177037745 A KR20177037745 A KR 20177037745A KR 20180014081 A KR20180014081 A KR 20180014081A
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component
contact
electrical contact
open
electrically contacting
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KR102062068B1 (ko
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슈테판 슈테그마이어
후베르트 바우어거
폴크마르 솜머
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지멘스 악티엔게젤샤프트
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Abstract

본 발명은, 적어도 하나의 콘택(40, 50)을 가지는 컴포넌트(10)(예컨대, 적어도 하나의 트랜지스터, 바람직하게는 IGBT(절연-게이트 양극성 트랜지스터(insulated-gate bipolar transistor))를 가지는 (반도체) 컴포넌트 및/또는 전력 컴포넌트)를 전기적으로 콘택팅하기 위한 방법에 관한 것이며, 적어도 하나의 개방-세공 콘택 피스(60, 70)가 적어도 하나의 콘택(40, 50)에 갈바닉적으로(전기화학적으로, 또는 외부 전류 없이) 연결된다. 이러한 방식으로, 컴포넌트 모듈이 달성된다. 콘택(40, 50)은 바람직하게는, 편평한 부분이거나 또는 콘택 표면을 가지며, 이 콘택 표면의 최대 평면 범위는 상기 콘택 표면에 수직적인 콘택(40, 50)의 확장부보다 더 크다. 갈바닉 연결의 온도는 최대 100 ℃, 바람직하게는 최대 60 ℃, 유리하게는 최대 20 ℃, 그리고 이상적으로는 최대 5 ℃이며, 그리고/또는 컴포넌트의 동작 온도로부터 최대 50 ℃만큼, 바람직하게는 최대 20 ℃만큼, 특히 최대 10 ℃만큼, 그리고 이상적으로는 최대 5 ℃만큼, 바람직하게는 최대 2 ℃만큼 벗어난다. 컴포넌트(10)는 추가적인 컴포넌트, 전류 전도체, 및/또는 기판(90)과 콘택 피스(60, 70)에 의하여 콘택팅될 수 있다. 바람직하게는, 컴포넌트(10)의 대향 면들 상에 2 개의 콘택들(40, 50)을 가지는 컴포넌트(10)가 사용되며, 적어도 하나의 개방-세공 콘택 피스(60, 70)는 각각의 콘택(40, 50)에 갈바닉적으로 연결된다.

Description

개방-세공 콘택 피스의 갈바닉 연결에 의하여 컴포넌트를 전기적으로 콘택팅하기 위한 방법, 및 대응하는 컴포넌트 모듈
본 발명은, 전기 전도성 콘택(contact)을 갖는 컴포넌트(component)를 전기적으로 콘택팅(contacting)하기 위한 방법, 및 적어도 하나의 전기 전도성 콘택을 가지는 컴포넌트를 갖는 컴포넌트 모듈(module)에 관한 것이다.
특히, 마이크로시스템(microsystem)들 기술 및 전력 전자공학의 분야에서, 수동 컴포넌트들, 이를테면 저항기들과 반도체 컴포넌트들, 이를테면 IGBT들, 다이오드(diode)들, MOSFET들, LED들 그리고 기판들, 이를테면 FR4, DCB, ANM 및 리드 프레임(lead frame)들의 전기 콘택들은 조립 및 연결 기술에 의하여 전기적으로 서로 연결된다.
기판들에 전기적으로 콘택팅하기 위해, 알려진 방법들은 전도성 접착제들을 사용하는 글루잉(gluing), 소위 "프리폼(preform)들"의 솔더링(soldering), 솔더 페이스트(solder paste)들을 사용하는 솔더링, 그리고 확산 솔더링 및 소결을 포함한다. 확산 솔더링 및 소결 시, 컴포넌트 콘택들은 또한, 높은 온도들을 견뎌 내야 한다.
그에 반해서, 기판으로부터 멀리 있는 콘택들은 통상적으로, 와이어-본드(wire-bond) 기술(또한: "테이프-본드(tape-bond) 기술"), 보상 엘리먼트(element)들, 이를테면 몰리브데넘(molybdenum)에 의해 지원되는 압력-콘택 기술과 같은 기법들을 사용하여, 또는 평면 기술들(예컨대, SiPLIT, Skin 및 DirectFET)을 이용하여 구현된다. 그러나, 압력 소결 또는 저압 소결에 의한 콘택팅(contacting)은, 뒤틀림(distortion)에 민감하며 부서지기 쉬운 전기 콘택들을 생성하는 경향이 있다. 그 외에도, 그러한 소결 방법들은 장비 측면에서 비싸며, 시간-소모적이다. 그 외에도, 솔더링 및 소결 방법들은 불리하게, 콘택팅될(contacted) 컴포넌트들에 입력되는 고온을 수반하며, 그러므로 열-감지 컴포넌트들에 사용될 수 없다. 게다가, 전기도금, 확산 솔더링 및 소결은 매우 시간-소모적인 프로세스(process)들이다.
다른 한편으로, 클램핑된(clamped), 스프링이 든(spring-loaded), 또는 크림프(crimped) 연결들을 이용하면, 필요한 고정(fixing)은 불리하게, 특히 다수의 콘택 지점들을 콘택팅할 때 상당한 설치 노력을 요구한다. 그 외에도, 불규칙한 압력 힘들에 기인하는, 컴포넌트들에 대한 손상의 위험 때문에, 이들 콘택팅 절차들은 매우 신뢰성 있는 것은 아니다.
다른 한편으로, 압축가능한 솔더링 재료들(이를테면, 인듐 코퍼레이션(Indium Corporation)이란 회사에 의해 출원일에 광고된 "히트스프링(Heatspring)")을 이용하는 콘택팅 방법은, 낮은 전기 전도율을 갖는 콘택들을 야기하며, 또한 시간-소모적이고 비싸다.
그러므로, 알려진 방법들의 단점은, 기판들로부터 멀리 있는 경우 그리고 기판들에 대한 전기 콘택팅을 위해, 다음의 요건들이 동시에 만족시키기가 어렵다는 점이다:
- 복수의 콘택들의 동시 생성
- 고온 입력 없이
- 고압 입력 없이
- 수 초 내지 수 분의 시간 범위에 있음
- 커다란 콘택 표면들을 가짐
- 그리고 고온 저항.
그러므로, 본 발명의 목적은 전술된 단점들이 발생하지 않는, 적어도 하나의 전도성 콘택을 갖는 컴포넌트를 전기적으로 콘택팅하기 위한 방법을 특정하는 것이다. 특히, 본 발명에 따른 방법은, 신속하게 그리고 온도-저항 방식으로, 커다란 표면적에 걸쳐, 고온 또는 고압 입력 없이, 복수의 콘택들이 동시에 콘택팅되는 것을 가능하게 하도록 의도된다. 본 발명의 다른 목적은, 위의 방식으로 콘택팅되는 전기 콘택들을 갖는 컴포넌트 모듈을 제공하는 것이다.
본 발명의 이 목적은, 청구항 제1 항에서 특정되는 특징(feature)들을 가지는 방법으로, 그리고 청구항 제15 항에서 특정되는 특징들을 가지는 컴포넌트 모듈로 달성된다. 본 발명의 바람직한 확장들은 개개의 종속 청구항들, 다음의 설명 및 도면으로부터 획득된다.
본 발명에 따른 방법은, 적어도 하나의 전기 콘택을 가지는 컴포넌트를 전기적으로 콘택팅하기 위한 방법이다. 본 발명에 따른 방법에서, 적어도 하나의 개방-세공 콘택 피스(open-pored contact piece)가 적어도 하나의 콘택에 갈바닉적으로(galvanically) 연결된다. 콘택 피스의 개방-세공 성질은 전해질 유체를 위한 많은 통로들을 제공하며, 그러므로 이 전해질 유체는 외부로부터 컴포넌트의 전기 콘택과 콘택 피스 사이의 경계 표면에 액세스(access)할 수 있다. 이상적으로는, 콘택 피스의 개방-세공 재료는 오픈-셀(open-cell) 구조를 가지며, 이 오픈-셀 구조를 통해, 전해질이 특히 효율적으로 지나갈 수 있다.
본 발명에 따른 방법은 유리하게는, 적어도 잠재적으로 열에 민감한, 콘택팅될 컴포넌트들로의 고온 입력 없이 수행될 수 있는데, 그 이유는 갈바닉(galvanic) 방법들은 통상적으로, 150 ℃를 초과하지 않는 비교적 낮은 온도들에서 수행되기 때문이다.
또한, 본 발명에 따른 방법에 의하여, 컴포넌트들의 고압 하중을 쉽게 방지하는 것이 가능한데, 그 이유는 갈바닉 방법들의 구현은 어떤 압축력들도 요구하지 않거나 또는 기껏해야 매우 낮은 압축력들을 요구하기 때문이다.
본 발명에 따른 방법에 의하여, 유리하게는, 영구적으로 탄성의, 회복력 있는 콘택들을 매우 쉽게 구현하는 것이 가능한데, 그 이유는 개방-세공 재료들은 통상적으로, 정확하게 그러한 회복력 있는, 탄성 재료 특성들을 가지기 때문이다.
본 출원의 맥락에서 "갈바닉적으로 연결되는" 것이란 문구는 특히 "갈바닉 방법들에 의하여 연결되는" 것 또는 "전기도금을 통해 연결되는" 것을 의미하는 것으로서 이해되어야 하며; 갈바닉 연결은 바람직하게는, 전해질 유체에 의하여, 특히 전해욕(electrolytic bath)에 의하여 수행된다.
본 발명에 따른 방법에서, 전해질 유체는 바람직하게는, 개방-세공 콘택 피스(open-pored contact piece)의 개방 세공들로 유입된다.
본 출원의 맥락에서 "개방-세공 콘택 피스"란 문구는 특히 세공들이 콘택 피스의 외부로부터 내부로 관통하는 콘택 피스를 의미하는 것으로 이해된다.
본 발명에 따른 방법에서, 콘택 피스는 바람직하게는 갈바닉적으로 연결되며, 컴포넌트의 전기 콘택 및/또는 콘택 피스가 형성되게 하는 재료의 유형과 동일한 유형의 재료가 증착된다.
유리하게는, 본 발명에 따른 방법에서, 적어도 아이솔레이션(isolation) 상태로 간주되는 적어도 하나의 콘택이 편평한 부분인 컴포넌트의 유형이 사용된다. 대안적으로 또는 그 외에도, 콘택은 바람직하게는 콘택 표면을 가지며, 이 콘택 표면의 최대 평면 확장부는 이 콘택 표면에 수직적인 콘택의 확장부보다 더 크다.
본 발명에 따른 방법이 특히 유리한 것으로 증명되는 곳은 특히 표면 콘택들의 콘택팅에 있는데, 그 이유는 이 방법에 의하여 평면 콘택이 용이하게 달성될 수 있기 때문이다. 특히, 열-전도 콘택들이 이러한 방식으로 쉽게 달성될 수 있는데, 그 이유는 평면 콘택들이 이 평면 콘택들의 공간 기하학적 구조의 결과로서 강한 열 전도 특성들을 이미 가지고 있기 때문이다. 열 분산에 필요한 열 전도율은 대개 이미 존재하는데, 그 이유는 콘택팅에 요구되는 우수한 전기 전도율 및 통상적인 재료들의 경우 열 분산을 위해 바람직한 우수한 열 전도율은 통상적으로 함께-나타나기 때문이다.
적절한 방식으로, 본 발명에 따른 방법에서, 적어도 하나의 콘택 피스로서 전기 전도성 콘택 피스가 사용된다. 본 발명에 따른 방법의 이러한 확장에서, 콘택들은 매우 신속하게 구현될 수 있는데, 그 이유는 재료가 콘택 사이트(site)에 증착되는 것에 의한 전기 전도성 연결이, 구현될 필요가 있는 전부이기 때문이다. 본 발명에 따른 방법의 이러한 확장에서, 더 많은 양들의 재료의 증착은 불필요한데, 그 이유는 콘택 피스 자체가 이미 대면적 전도 경로를 구성하기 때문이다.
본 발명에 따른 방법의 유리한 확장에서, 적어도 하나의 개방-세공 콘택 피스(open-pored contact piece)는 다공성 재료로부터 또는 다공성 재료로 형성된다.
본 발명에 따른 방법에서, 적어도 하나의 개방-세공 콘택 피스는 유리하게는 금속, 특히 니켈(nickel) 및/또는 은(silver) 및/또는 금(gold) 및/또는 주석 및/또는 구리로부터 또는 이로 형성된다.
본 발명에 따른 방법에서, 적어도 하나의 개방-세공 콘택 피스는 유리하게는 조직-형 및/또는 발포체-형 및/또는 메시-형(mesh-like) 구조로 형성된다.
본 발명에 따른 방법의 유리한 확장에서, 100 ℃를 초과하지 않고, 바람직하게는 60 ℃를 초과하지 않고, 특히 20 ℃를 초과하지 않고, 그리고 유리하게는 5 ℃를 초과하지 않고, 그리고/또는 컴포넌트의 동작 온도로부터 20 ℃ 이상, 바람직하게는 10 ℃ 이상, 특히 5 ℃ 이상, 그리고 이상적으로는 2 ℃ 이상 벗어나지 않는 온도에서, 적어도 하나의 개방-세공 콘택 피스는 콘택에 갈바닉적으로 연결된다. 저온들로 동작할 때, 방법의 구현 동안 컴포넌트에 입력되는 온도는 특히 낮게 유지될 수 있다. 본 발명에 따른 방법의 이러한 확장이 특히 바람직하다는 것은, 정확하게 열-감지 컴포넌트들을 위한 것이다. 또한, 갈바닉 연결 온도와 후속 동작 온도 사이의 가능한 최소 온도차에서, 컴포넌트는 특히 무-응력 방식으로 연결된다. 100 ℃보다 큰 온도들에서 컴포넌트의 지정된 동작 온도들에 대해, 갈바닉 연결은 100 ℃를 초과하는 온도들에서 수행될 수 있으며, 이어서, 유리하게는 용융된 염-기반의 금속 증착 방법들이 사용된다.
적절한 방식으로, 본 발명에 따른 방법에서, 적어도 하나의 개방-세공 콘택 피스가 전기화학 도금 방법에 의하여 갈바닉적으로 연결된다.
본 발명에 따른 방법의 이러한 확장에서, 전기 전도성 콘택 피스가 사용되며, 금속이 전기-화학 도금 방법에 의하여 콘택 피스 상에 증착된다. 본 발명에 따른 방법에서, 유리하게는, 방법의 일부로서 콘택 피스 상에 증착될 것과 동일한 유형의 금속으로 형성되는 애노드(anode)가 사용된다. 유리하게는, 이 금속은 구리이다. 대안적으로, 그리고 동일하게 유리하게는, 사용되는 금속은 니켈(nickel) 및/또는 은(silver) 및/또는 금(gold) 및/또는 주석이다.
대안적으로, 그리고 동일하게 바람직하게는, 본 발명에 따른 방법에서, 적어도 하나의 개방-세공 콘택 피스는 외부 전류가 없는 절차에 의하여, 특히, 전달(transfer) 금속화를 사용하여, 그리고/또는 환원 금속화를 사용하여, 그리고/또는 콘택 금속화를 사용하여 갈바닉적으로 연결된다. 유리하게는, 무-외부 전류(external current-free) 전기도금 절차에서, 금속의 증착은, 컴포넌트의 후속 동작 온도와 거의 동일한 동작 온도로 수행될 수 있다. 그 결과, 기계 응력들이 감소되거나 또는 방지될 수 있다. 그 외에도, 특히, 니켈, 또는 니켈 및 금의 전기도금에 의해, 방식 처리(corrosion protection)가 또한 구현될 수 있다. 무-외부 전류 절차의 추가적인 장점은, 컴포넌트 자체가 전기적으로 콘택팅될 필요가 없다는 점이다. 그러므로, 시드(seed) 층들의 시간-소모적인 증착들, 및 콘택팅 조치(measure)들이 요구되지 않는다.
편리하게는, 본 발명의 유리한 확장에서, 보통 말하는 그런(as such) 연속적인 전도 경로를 초기에 형성하지 않는, 엄밀히 말하면, 거시적(macroscopic)인 수준에서 전도성이 아닌 콘택 피스가 사용된다. 대신에, 콘택 피스는 복수의 금속성 아일랜드(island)들을 가지며, 이 복수의 금속성 아일랜드들은 단지, 유리하게는 외부 전류가 없는 전기도금 프로세스 동안 금속화 아일랜드들로서 어느 정도까지 연속적인 전도 경로만을 형성한다.
바람직하게는, 본 발명에 따른 방법에서, 컴포넌트는 콘택 피스에 의하여 다른 컴포넌트 및/또는 전류 전도체와, 그리고/또는 기판과 콘택팅되며, 그 결과 콘택 피스 및/또는 컴포넌트 및/또는 다른 컴포넌트 및/또는 전류 전도체 및/또는 기판은 전기 절연 층으로 코팅된다(coated).
유리하게는, 본 발명에 따른 방법에서, 절연 층은 캐스팅(casting) 및/또는 몰딩(molding)에 의하여, 그리고/또는 실록세인(siloxane)들 및/또는 폴리머(polymer)들로부터 또는 이들로 형성된다.
본 발명에 따른 방법의 유리한 확장에서, 컴포넌트로서 전력 컴포넌트가 사용된다.
적절한 방식으로, 본 발명에 따른 방법에서, 컴포넌트로서, 적어도 하나의 트랜지스터(transistor), 바람직하게는 절연된 게이트(gate) 전극을 갖는 양극성 트랜지스터("절연-게이트 양극성 트랜지스터(insulated-gate bipolar transistor)": IGBT)를 가지는 컴포넌트가 사용된다.
바람직하게는, 본 발명에 따른 방법에서, 2 개의 콘택들을 가지는 컴포넌트가 사용되며, 이 콘택들은 바람직하게는 대향 면들, 특히 컴포넌트의 편평한 면(flat side)들 상에 있으며, 앞서 설명된 바와 같은 본 발명에 따른 방법에 따라, 적어도 하나의 개방-세공 콘택 피스가 이들 콘택들에 갈바닉적으로 연결되는데, 바람직하게는 각각의 경우에, 특히 적어도 하나의 개방-세공 콘택 피스가 콘택마다 갈바닉적으로 연결된다.
본 발명에 따른 컴포넌트 모듈은 적어도 하나의 전기 콘택을 가지는 컴포넌트를 포함한다. 본 발명에 따라, 적어도 하나의 개방-세공 콘택 피스가 전기 콘택에 갈바닉적으로 연결된다.
본 발명에 따른 컴포넌트 모듈이 위에서 설명된 바와 같은 본 발명에 따른 방법에 의하여 형성되면, 특히 유리하다.
본 발명에 따른 컴포넌트 모듈의 확장에서, 컴포넌트는 적층 방식으로 구현되며, 이 적층의 층들은 인쇄 회로 보드(board)들 및/또는 기판들에 의하여 형성되며, 이 인쇄 회로 보드들 및/또는 기판들 상에, 컴포넌트들이 콘택 피스들에 의하여 연결된다. 유리하게는, 이 목적을 위해, 모든 층들 상의 컴포넌트들의 콘택들은 본 발명에 따른 방법에 의하여 동시에 콘택팅된다.
본 발명에 따른 컴포넌트 모듈의 다른 확장에서, 복수의 컴포넌트들이 기판 또는 회로 보드의 편평한 면에 공동으로 연결된다. 또한, 이 설계에서, 복수의 컴포넌트들은 본 발명에 따른 방법에 의하여 동시에 콘택팅될 수 있다.
다음에서, 본 발명은 도면에서 도시된 예시적 실시예에 기반하여 더욱 상세히 설명된다. 다음과 같이 도시된다:
도 1은 단면이 도시된, 본 발명에 따른 컴포넌트 모듈의 제1 예시적 실시예를 생성하기 위한 본 발명에 따른 방법의 제1 예시적 실시예의 구현 전의 세라믹(ceramic) 기판 상에서의 전력 컴포넌트의 어레인지먼트(arrangement)의 개략적인 스케치(sketch)이고,
도 2는 단면이 도시된, 본 발명에 따른 방법의 제1 단계의 구현 동안의 도 1에 따른 전력 컴포넌트의 어레인지먼트의 개략적인 스케치이고,
도 3은 단면이 도시된, 본 발명에 따른 방법의 제1 단계의 구현 후의 도 1에 따른 전력 컴포넌트의 어레인지먼트의 개략적인 스케치이고,
도 4는 도 3의 상세한 확대 (A)로부터의 세부사항 (B)와 함께, 이 상세한 확대이고,
도 5는 단면의 개략적인 다이어그램(diagram)으로 도 1 내지 도 4에 따른 방법 단계들 후의 본 발명에 따른 컴포넌트 모듈이고,
도 6은 단면이 도시된, 본 발명에 따른 컴포넌트 모듈의 추가적인 예시적 실시예를 생성하기 위한 본 발명에 따른 방법의 추가적인 예시적 실시예의 구현 전의 세라믹 기판 상에서의 전력 컴포넌트의 어레인지먼트의 추가적인 도면이고,
도 7은 단면이 도시된, 본 발명에 따른 방법의 추가적인 예시적 실시예의 제1 단계의 구현 동안의 도 6에 따른 전력 컴포넌트의 개략적인 스케치이며, 그리고
도 8은 단면이 도시된, 도 6 및 도 7에 따른 방법 단계들 후의 본 발명에 따른 컴포넌트 모듈의 추가적인 예시적 실시예의 개략적인 다이어그램이다.
도 1에서 도시된 전력 컴포넌트(10)는 절연 게이트 전극을 갖는 양극성 트랜지스터("절연-게이트 양극성 트랜지스터(insulated-gate bipolar transistor)": IGBT)이며, 서로 등지는 제1 편평한 면(20) 및 제2 편평한 면(30)을 가진다. 2차원 칩(chip) 금속화들로서 설계되는 전력 컴포넌트(10)의 박막-형 표면 콘택들(40, 50)은 제1 편평한 면(20) 및 제2 편평한 면(30)을 따라 확장된다. 예시된 예시적 실시예에서는, 도 1에서 상단 면에 배열되는 전력 컴포넌트(10)의 표면 콘택(40)이 구리로 만들어지는 반면에, 밑면에 포지셔닝되는(positioned) 전력 컴포넌트(10)의 표면 콘택(50)은 은으로 만들어진다. 원칙적으로, 상단-장착 표면 콘택들이 또한, 은으로 형성되거나, 또는 AlSiCu, 또는 다른 금속들 또는 다른 전기 전도성 재료들로부터 또는 이들로 형성될 수 있는 반면에, 밑면 표면 콘택들은 또한, 금 또는 다른 금속들 또는 다른 전기 전도성 재료들로부터 또는 이들로 형성될 수 있다.
이들 표면 콘택들(40, 50)을 콘택팅하기 위해, 표면 콘택들(40, 50) 상에, 개방-세공 재료의 콘택 피스들(60, 70)이 배치되며, 이 콘택 피스들(60, 70)은 표면 콘택들(40, 50)을 따라 실질적으로 평면 방식으로 확장된다. 예시된 예시적 실시예에서, 콘택 피스들(60, 70)은 전도성이며, 전도성 구리 스펀지(sponge)들로서 구현된다. 실제, 도면들을 참조하여 설명된 예시적 실시예들에 대응하는, 별개로 도시되지 않은 다른 예시적 실시예들에서, 개방-세공 콘택 피스들(60, 70)이 또한, 다른 개방-세공 전도성 재료들, 이를테면 메시(mesh)들 또는 조직들 또는 다른 다공성 구조들의 형태로 구현되는 알루미늄(aluminum), Ti 또는 다른 금속들로 또는 이로부터 만들어지는 콘택 피스들로 구성될 수 있다는 것은 말할 필요도 없다. 예컨대, 전도성 재료들로 부분적으로 코팅되거나(coated) 또는 전도성 입자들로 패킹되는(packed) 폴리머 스펀지들이 또한, 콘택 피스들로서 사용될 수 있다.
전력 컴포넌트(10)의 표면 콘택들(50) 중 하나는 알루미늄 나이트라이드(aluminum nitride)(AlN)의 세라믹 코어(core)(100)를 가지는 세라믹 기판(90)의 다른 표면 콘택(80) 쪽으로 향한다. 원칙적으로, 구체적으로 도시되지 않은 다른 예시적 실시예들에서, 세라믹 코어(100)는 다른 세라믹 재료로, 그렇지 않으면 FR 4와 같은 인쇄 회로 보드 재료들 또는 실리콘(silicone) 및/또는 에폭시(epoxy)로 만들어진 다른 기판들로 구성될 수 있다. 세라믹 기판(90)의 다른 표면 콘택(80)은 표피(superficial) 기판 금속화로서, 예시된 예시적 실시예에서는, 구리 기판 금속화로서 구현된다. 세라믹 기판(90) 및 세라믹 기판(90)의 다른 표면 콘택(80) 쪽으로 향하는 전력 컴포넌트(10)의 표면 콘택(50)은 서로 평행하게 확장되며, 그러므로 일정한 갭(level gap)을 형성한다. 세라믹 기판(90) 쪽으로 향하는 표면 콘택(50) 상에 배열되는 콘택 피스(70)는 이 일정한 갭을 완전히 채우며, 전력 컴포넌트(10)의 이 표면 콘택(50)에 대해 그리고 세라믹 기판(90)의 다른 표면 콘택(80)에 대해 이 콘택 피스(70)의 전체 표면으로 안착된다. 그러므로, 콘택 피스(70)는 전력 컴포넌트(10) 및 세라믹 기판(90)에 콘택팅하도록 배열된다.
추가적인 방법 단계에서, 개방-세공 콘택 피스들(60, 70)은 전극들(110, 120)과 콘택팅된다(도 2). 이를 위해, 한편으로, 세라믹 기판(90)을 등지는 표면 콘택(40) 상에 배열되는 특정 콘택 피스(60) 상에, 제1 전극(110)은 이러한 제1 전극(110)의 외부 면(130) ―전력 컴포넌트(10)로부터 멀리 있는 면― 이 전기적으로 콘택팅된다. 추가적인 제2 전극(120)이 구리 표면 콘택(80) 상에 전기적으로 콘택팅되며, 이 구리 표면 콘택(80)은 전력 컴포넌트(10)와 세라믹 기판(90) 사이에 포지셔닝되는 콘택 피스 상에 위치된다. 제1 전극(110)은 또한, 고정 엘리먼트로서 동작하며, 이 고정 엘리먼트는 본 발명에 따른 방법 동안 전력 컴포넌트(10), 세라믹 기판(90) 및 콘택 피스들(60, 70)에 의해 형성되는 전력 모듈의 고정을 보장한다. 이를 위해, 별개로 도시되지 않은 클램핑 디바이스(clamping device)에 의하여 세라믹 기판(90)의 방향으로 제1 전극(110)에 힘이 적용된다. 대안적으로, 실제, 도시된 예시적 실시예에 대응하는 추가적인 예시적 실시예에서, 전극(110)은 고정 엘리먼트로서 설계된 것이 아닐 수 있으며, 대신에 콘택 피스들(60, 70)은 전도성 접착제에 의하여 고정된다. 접착제의 전도율의 결과로서, 콘택 피스들(60, 70)은 간단히 전기적으로 콘택팅될 수 있다.
전극들(110, 120)과 개방-세공 콘택 피스들의 콘택팅의 결과로서, 알려진 전기화학 도금 프로세스에 의하여, 금속 ―위의 예시적 실시예에서는, 구리― 이 개방-세공 콘택 피스들(60, 70)과 표면 콘택들(40, 50, 80) 사이의 구역에 증착된다(도 3). 예시된 예시적 실시예에서, 증착된 재료는 층들(132, 134, 136)을 형성하며, 이 층들(132, 134, 136)은, 칩 금속화들 또는 세라믹 기판 금속화들, 그리고 콘택 피스들(60, 70)을 따라 평면 방식으로 확장된다. 이 증착의 결과로서, 개방-세공 콘택 피스들(60, 70)은 전력 컴포넌트(10)에 동시에 연결되게 된다. 콘택 피스들(60, 70) 전부가 이 콘택 피스들(60, 70) 각각이 안착되는 개개의 콘택들(40, 50, 80)에 동시에 연결된다.
앞서 설명된 예시적 실시예에 따라 구현되는 전력 컴포넌트(10), 콘택 피스(70) 그리고 세라믹 기판(90) 사이의 컴포넌트 콘택은, 실제 이미지(image)를 포함하여 상세히 도 4a에서 확대된 상태로 도시된다. 세부사항은, 전력 컴포넌트(10)와 세라믹 기판(90) 사이에 위치되는 콘택 피스(70)의 연결을 도시한다. 도 4b에서 도시된 세부사항은, 전력 컴포넌트(10)에 대한 콘택 피스(70)의 연결을 예시한다. 전력 컴포넌트(10)를 향하는 콘택 피스(70)의 면(140)과 콘택 피스(70)를 향하는 전력 컴포넌트(10)의 칩 금속화의 면(150) 사이에서, 금속으로 중간 구역(160)을 채우는 갈바닉 연결 동안에 침입형(interstitial) 구리의 입자 성장이 이루어졌다는 것을 명확하게 알 수 있다.
후속 프로세싱(processing) 단계에서, 세라믹 기판(90) 및 콘택팅된 전력 컴포넌트(10)에 의해 형성되는, 본 발명에 따른 전력 모듈들은 절연 재료(170), 도시된 경우에서는, 실록세인으로 캡슐화된다(encapsulated)(도 5). 실제, 도시된 것들에 대응하는, 별개로 도시되지 않은 다른 예시적 실시예들에서, 상이한 절연 재료(170), 예컨대 폴리머가 사용된다.
도 6 내지 도 8에서 도시된 추가적인 예시적 실시예에서, 전기화학 도금 프로세스 대신에, 무-외부 전류 도금 프로세스가 사용된다. 그에 따라서, ―알려진 바와 같이― 무-외부 전류 도금 프로세스들을 위해 전극들(110, 120)과의 어떤 콘택팅도 요구되지 않는다는 점에서, 이 예시적 실시예는 도 1 내지 도 5에서 도시된 예시적 실시예와 상이하다. 결과적으로, 제1 전극(110) 대신에, 고정 엘리먼트(180)만이 존재한다(도 6). 별개로 도시되지 않은 클램핑 디바이스에 의하여 세라믹 기판(90)의 방향으로 고정 엘리먼트(180)에 힘이 적용되어서, 전력 모듈은 방법 동안 함께 유지된다. 대안적으로, 실제, 도시된 예시적 실시예에 대응하는 추가적인 예시적 실시예에서, 어떤 고정 엘리먼트(180)도 제공되지 않으며, 대신에 콘택 피스들(60', 70')은, 접착제를 사용하여(예컨대, 작은 도트(dot)의 접착제를 사용하여) 적소에 고정된다.
무-외부 전류 전기도금 프로세스에 의하여, 금속 ―도시된 예시적 실시예에서는, 구리― 이 개방-세공 콘택 피스들(60', 70')과 전력 컴포넌트(10) 사이의 구역에, 알려진 방법에 따라 증착된다(도 7). 예시된 예시적 실시예에서, 증착된 재료는 층들을 형성하며, 이 층들은, 칩 금속화들 또는 세라믹 기판 금속화들, 그리고 콘택 피스들(60', 70')을 따라 평면 방식으로 확장된다. 이 증착의 결과로서, 개방-세공 콘택 피스들(60', 70')은 전력 컴포넌트(10)에 동시에 연결되게 된다.
실제, 도 6 내지 도 8에 기반하여 설명되는 예시적 실시예에 대응하는 추가적인 예시적 실시예에서, 보통 말하는 그런 연속적인 전도 경로를 초기에 형성하지 않는 콘택 피스가 사용된다. 대신에, 콘택 피스는 복수의 구리 금속성 아일랜드들을 가지며, 앞서 설명된 바와 같이, 이 복수의 구리 금속성 아일랜드들은 단지, 무-외부 전류 전기도금 프로세스 동안 금속화 아일랜드들로서 어느 정도까지 연속적인 전도 경로만을 형성한다.
후속 프로세싱 단계에서, 세라믹 기판(90) 및 콘택팅된 전력 컴포넌트(10)에 의해 형성되는, 본 발명에 따른 전력 모듈들은 절연 재료(170), 도시된 경우에서는, 실록세인으로 캡슐화된다(도 8). 실제, 도시된 것들에 대응하는, 별개로 도시되지 않은 다른 예시적 실시예들에서, 상이한 절연 재료(170), 예컨대 폴리머가 사용된다.
위에서-설명된 예시적 실시예들과 동일한 방식으로, 다른 예시적 실시예들에서, 구리 대신에, 갈바나이징되는(galvanized) 금속은 또한, 상이한 금속일 수 있다.
별개로 도시되지 않은 다른 예시적 실시예들에서, 본 발명에 따른 전력 모듈은 적층의 형태로 쌓아 올려진 복수의 세라믹 또는 다른 기판들로 구현될 수 있다. 본 발명에 따른 방법에 의하여, 전자 콘택들은 복수의 층들로 동시에 구현될 수 있다. 대안적으로 또는 추가적으로, 본 발명에 따른 방법에 의하여, 단일 층의 복수의 컴포넌트들이 동시에 콘택팅되는 것이 또한 가능하다.

Claims (16)

  1. 적어도 하나의 전기 콘택(contact)(40, 50)을 가지는 컴포넌트(component)(10)를 전기적으로 콘택팅(contacting)하기 위한 방법으로서,
    적어도 하나의 개방-세공 콘택 피스(open-pored contact piece)(60, 70, 60', 70')가 적어도 하나의 콘택(40, 50)에 갈바닉적으로(galvanically) 연결되는,
    적어도 하나의 전기 콘택(40, 50)을 가지는 컴포넌트(10)를 전기적으로 콘택팅하기 위한 방법.
  2. 제1 항에 있어서,
    상기 컴포넌트(10)가 사용되며, 적어도 아이솔레이션(isolation) 상태로 간주되는 적어도 하나의 콘택(40, 50)은 편평한 부분이고 그리고/또는 콘택 표면을 가지며, 상기 콘택 표면의 최대 평면 확장부는 상기 콘택 표면에 수직적인 콘택의 확장부보다 큰,
    적어도 하나의 전기 콘택(40, 50)을 가지는 컴포넌트(10)를 전기적으로 콘택팅하기 위한 방법.
  3. 제1 항에 있어서,
    전기 전도성 콘택 피스(60, 70, 60', 70')가 적어도 하나의 콘택 피스(60, 70, 60', 70')로서 사용되는,
    적어도 하나의 전기 콘택(40, 50)을 가지는 컴포넌트(10)를 전기적으로 콘택팅하기 위한 방법.
  4. 제1 항 내지 제3 항 중 어느 한 항에 있어서,
    상기 적어도 하나의 개방-세공 콘택 피스(60, 70, 60', 70')는 다공성 재료로부터, 또는 다공성 재료로 형성되는,
    적어도 하나의 전기 콘택(40, 50)을 가지는 컴포넌트(10)를 전기적으로 콘택팅하기 위한 방법.
  5. 제1 항 내지 제4 항 중 어느 한 항에 있어서,
    상기 적어도 하나의 개방-세공 콘택 피스(60, 70, 60', 70')는 금속, 특히 니켈(nickel) 및/또는 은(silver) 및/또는 금(gold) 및/또는 주석 및/또는 구리로부터 또는 이로 형성되는,
    적어도 하나의 전기 콘택(40, 50)을 가지는 컴포넌트(10)를 전기적으로 콘택팅하기 위한 방법.
  6. 제1 항 내지 제5 항 중 어느 한 항에 있어서,
    상기 적어도 하나의 개방-세공 콘택 피스(60, 70, 60', 70')는 조직-형 및/또는 발포체-형 및/또는 메시-형(mesh-like) 구조로 형성되는,
    적어도 하나의 전기 콘택(40, 50)을 가지는 컴포넌트(10)를 전기적으로 콘택팅하기 위한 방법.
  7. 제1 항 내지 제6 항 중 어느 한 항에 있어서,
    100 ℃를 초과하지 않고, 바람직하게는 60 ℃를 초과하지 않고, 유리하게는 20 ℃를 초과하지 않고, 그리고 이상적으로는 5 ℃를 초과하지 않고, 그리고/또는 상기 컴포넌트의 동작 온도로부터 50 ℃ 이상, 바람직하게는 20 ℃ 이상, 특히 10 ℃ 이상, 그리고 이상적으로는 5 ℃ 이상, 바람직하게는 2 ℃ 이상 벗어나지 않는 온도에서, 상기 적어도 하나의 개방-세공 콘택 피스(60, 70, 60', 70')는 상기 콘택(40, 50)에 갈바닉적으로 연결되는,
    적어도 하나의 전기 콘택(40, 50)을 가지는 컴포넌트(10)를 전기적으로 콘택팅하기 위한 방법.
  8. 제1 항 내지 제7 항 중 어느 한 항에 있어서,
    상기 적어도 하나의 개방-세공 콘택 피스(60, 70, 60', 70')는 전기화학 도금 프로세스(process)를 사용하여 갈바닉적으로 연결되는,
    적어도 하나의 전기 콘택(40, 50)을 가지는 컴포넌트(10)를 전기적으로 콘택팅하기 위한 방법.
  9. 제1 항 내지 제8 항 중 어느 한 항에 있어서,
    상기 적어도 하나의 개방-세공 콘택 피스(60, 70, 60', 70')는 외부 전류가 없는 방법에 의하여, 특히 전달(transfer) 금속화 및/또는 환원 금속화 및/또는 콘택 금속화에 의하여 갈바닉적으로 연결되는,
    적어도 하나의 전기 콘택(40, 50)을 가지는 컴포넌트(10)를 전기적으로 콘택팅하기 위한 방법.
  10. 제1 항 내지 제 9 항 중 어느 한 항에 있어서,
    상기 컴포넌트(10)는 상기 콘택 피스(60, 70, 60', 70')에 의하여 다른 컴포넌트 및/또는 전류 전도체와, 그리고/또는 기판(90)과 콘택팅되며(contacted), 그 결과 상기 콘택 피스(60, 70, 60', 70') 및/또는 상기 컴포넌트(10) 및/또는 상기 다른 컴포넌트 및/또는 전류 전도체 및/또는 기판(90)은 전기 절연 층(170)으로 코팅되는(coated),
    적어도 하나의 전기 콘택(40, 50)을 가지는 컴포넌트(10)를 전기적으로 콘택팅하기 위한 방법.
  11. 제10 항에 있어서,
    상기 절연 층(170)은 캐스팅(casting) 및/또는 몰딩(molding)에 의하여, 그리고/또는 실록세인(siloxane)들 및/또는 폴리머(polymer)들로부터 또는 이들로 형성되는,
    적어도 하나의 전기 콘택(40, 50)을 가지는 컴포넌트(10)를 전기적으로 콘택팅하기 위한 방법.
  12. 제1 항 내지 제11 항 중 어느 한 항에 있어서,
    전력 컴포넌트가 상기 컴포넌트(10)로서 사용되는,
    적어도 하나의 전기 콘택(40, 50)을 가지는 컴포넌트(10)를 전기적으로 콘택팅하기 위한 방법.
  13. 제1 항 내지 제12 항 중 어느 한 항에 있어서,
    적어도 하나의 트랜지스터(transistor), 바람직하게는 IGBT를 가지는 컴포넌트가 상기 컴포넌트(10)로서 사용되는,
    적어도 하나의 전기 콘택(40, 50)을 가지는 컴포넌트(10)를 전기적으로 콘택팅하기 위한 방법.
  14. 제1 항 내지 제13 항 중 어느 한 항에 있어서,
    2 개의 콘택들(40, 50)을 가지는 컴포넌트(10)가 사용되며, 상기 콘택들은 바람직하게는 서로 대향 면들, 특히 상기 컴포넌트(10)의 편평한 면(flat side)들 상에 있으며, 바람직하게는 제2 항 내지 제 12 항에 따른 방법에 따라, 적어도 하나의 개방-세공 콘택 피스(60, 70, 60', 70')가 각각의 콘택(40, 50)에 갈바닉적으로 연결되는,
    적어도 하나의 전기 콘택(40, 50)을 가지는 컴포넌트(10)를 전기적으로 콘택팅하기 위한 방법.
  15. 적어도 하나의 전기 콘택(40, 50)을 갖는 컴포넌트를 가지는 컴포넌트 모듈(module)로서,
    적어도 하나의 개방-세공 콘택 피스(60, 70, 60', 70')가 상기 적어도 하나의 전기 콘택(40, 50)에 갈바닉적으로 연결되는,
    적어도 하나의 전기 콘택(40, 50)을 갖는 컴포넌트를 가지는 컴포넌트 모듈.
  16. 제15 항에 있어서,
    상기 컴포넌트 모듈은, 제1 항 내지 제14 항 중 어느 한 항에 따른 방법에 의하여 형성되는,
    적어도 하나의 전기 콘택(40, 50)을 갖는 컴포넌트를 가지는 컴포넌트 모듈.
KR1020177037745A 2015-06-01 2016-05-23 개방-세공 콘택 피스의 갈바닉 연결에 의하여 컴포넌트를 전기적으로 콘택팅하기 위한 방법, 및 대응하는 컴포넌트 모듈 KR102062068B1 (ko)

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