CN107660308A - 用于借助于开孔接触件的电镀式连接来使组件电接触的方法和相应的组件模块 - Google Patents

用于借助于开孔接触件的电镀式连接来使组件电接触的方法和相应的组件模块 Download PDF

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CN107660308A
CN107660308A CN201680031979.6A CN201680031979A CN107660308A CN 107660308 A CN107660308 A CN 107660308A CN 201680031979 A CN201680031979 A CN 201680031979A CN 107660308 A CN107660308 A CN 107660308A
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CN107660308B (zh
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S.施特格迈尔
H.鲍尔埃格尔
V.佐默
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Siemens AG
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Siemens AG
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Abstract

在用于使具有至少一个接触部的组件电接触的方法中，至少一个开孔接触件电镀式连接到至少一个接触部。因此构成组件模块。接触部优选是平面部分或者具有以下接触面：所述接触面的最大的平面延伸比接触部垂直于所述接触面的延伸更大。电镀式连接的温度为最高100℃、优选地最高60℃、适宜地最高20℃并且理想地最高5℃和/或与所述组件的运行温度偏差最高50℃、优选地最高20℃，尤其最高10℃并且理想地最高5℃、优选地最高2℃。组件可以借助所述接触件与另外的组件和/或导电体和/或衬底接触。优选地，考虑具有两个接触部的组件，所述两个接触部在所述组件的相互背离的侧上，其中，对于各个接触部，至少一个开孔接触件在所述接触部上电镀式连接。

Description

用于借助于开孔接触件的电镀式连接来使组件电接触的方法 和相应的组件模块
技术领域
本发明涉及用于使具有导电接触部的组件电接触的方法，以及具有包括至少一个导电接触部的组件的组件模块。
背景技术
尤其在微系统技术和功率电子设备中，无源组件、诸如电阻以及半导体组件、诸如IGBT、二极管、MOSFET、LED和衬底、诸如例如FR4、DCB、ANM和引线框架（Leadframes）的电接触部借助构造和连接技术相互电连接。
已知以下方法用于到衬底上的电接触：借助导电粘合剂进行粘合，所谓的“Preforms（预成型）”焊接、借助焊膏的焊接、以及扩散焊接和烧结。在扩散焊接和烧结中，组件接触部也经受住高的温度。
而远离衬底的接触通常利用以下方法如引线键合技术（也称：“Bändchen-Bond-Technologie”）、压力接触技术借助补偿元素、如钼或者借助平面技术（例如SiPLIT、Skin和DirectFET）来实现。然而，在借助压力烧结或低压力烧结进行接触的情况下引起容易张紧和断裂的电接触部。此外，这样的烧结方法在时间上和仪器方面是耗费的。此外，焊接方法和烧结方法不利地引起高温输入到待接触的构件中并且因此不能够用于热敏感的组件。此外，电镀、扩散焊接和烧结是非常耗费时间的方法。
相反，在夹持连接或弹簧连接或挤压连接中，尤其在多个接触部位接触的情况下的必要的固定不利地需要巨大的装配耗费。此外，这些接触方法由于组件的基于无规律的压力引起的损坏的风险而是非常不可靠的。
相反，利用可挤压的焊接材料的接触（例如“Heatspring：热泉”，在申请时间点由企业Indium Cooperation销售）导致具有小的电传导性的接触并且此外是耗费的和昂贵的。
因此，已知的方法不利的是，为了电接触到衬底上并且远离衬底，以下要求很难能够同时被满足：
- 多个接触部的同时制造；
- 无高的温度输入（Temperatureintrag）；
- 无高的压力输入（Druckeintrag）；
- 从数秒至数分钟的时间范围中；
- 具有大的接触面；
- 以及高的耐热性。
发明内容
因此，本发明的任务是，说明一种用于使具有至少一个导电接触部的组件电接触的方法，所述方法不具有上述缺点。利用根据本发明的方法尤其可能的是，在无高的温度输入或压力输入的情况下快速地、大面积地并且耐热地同时接触多个接触部。此外，本发明的任务是，提供一种具有这样接触的电接触部的组件模块。
利用具有在权利要求1中说明的特征的方法以及利用具有在权利要求15中说明的特征的组件模块来解决本发明的任务。从所属的从属权利要求、以下的说明书和附图得出本发明的优选的扩展方案。
根据本发明的方法是一种用于组件的电接触的方法，所述组件具有至少一个电接触部。在根据本发明的方法中，将至少一个开孔接触件电镀式连接到所述至少一个接触部。接触件的开口孔隙率为电解液提供众多的通道，因此电解液可以从外部到达组件电接触部和接触件的界面。理想地，接触件的开孔材料具有连通孔隙的结构，穿过所述结构，电解液可以特别高效地通过。
可以有利地在无高的温度输入到待接触的组件中（所述组件是至少潜在地易于受热影响的）的情况下执行根据本发明的方法，因为通常在最高150℃的相对低的温度下执行所述电镀式方法。
借助于根据本发明的方法也可以容易地避免组件的高的压力负荷，因为为了执行电镀式方法不需要压力或在大多数情况下需要小的压力。
有利地，借助根据本发明的方法可以非常容易地实现持久弹性的、有弹力的接触，因为恰恰开孔材料通常具有弹性的、有弹力的材料特性。
本申请意义上的措辞“电镀式连接”尤其理解为“借助电镀技术连接”或“借助电镀连接”；电镀式连接优选借助电解液、尤其借助电解槽来实现。
优选地，在根据本发明的方法中，电解液引入到开孔接触件的敞开的孔中。
本申请意义上的措辞“开孔接触件”尤其理解为以下接触件，在所述接触件中，孔从接触件的外部通往内部。
优选地，在根据本发明的方法中，接触件电镀式连接，其中，沉积这样的材料，所述材料等同于以下材料：借助该材料构成所述接触件和/或所述组件的接触部。
有利地，在根据本发明的方法中考虑这样的组件，在所述组件中，所述至少一个接触部至少自身来看是平面部分。替代地或附加地，所述接触部优选地具有以下接触面：所述接触面的最大的平面延伸比所述接触部的垂直于所述接触面的延伸更大。
恰恰在接触平面接触部的情况下，根据本发明的方法被证明为特别有利的，因为借助所述方法可容易地实现平面接触。尤其通过这种方式可以容易地实现扩散热的接触，因为平面的接触部已经基于空间几何结构而引起强的热扩散。通常给定对于热扩散所需的热传导性，因为对于典型的材料，对于接触所需的良好的电传导性以及对于热扩散值得期望的良好的热传导性通常彼此伴随。
更合适地，在根据本发明的方法中，考虑导电的接触件作为至少一个接触件。在根据本发明的方法的所述扩展方案中能够非常迅速地实现接触，因为仅仅一个导电连接必须借助沉积在接触部位处的材料来完成。在根据本发明的方法的该扩展方案中，沉积较大的材料量不是必要的，因为接触件自身已经是大面积的导电路径。
在根据本发明的方法的一个有利的扩展方案中，至少一个开孔接触件由多孔的材料构造或以多孔的材料构成。
有利地，在根据本发明的方法中，所述至少一个开孔接触件由金属或者以金属、尤其镍和/或银和/或金和/或锡和/或铜构成。
适宜地在根据本发明的方法中，所述至少一个开孔接触件以编织网状的和/或泡沫状的和/或网络状的结构构成。
在根据本发明的方法的一个有利的扩展方案中，使所述至少一个开孔接触件在以下温度的情况下电镀式连接到所述接触部，所述温度为最高100℃、优选地最高60℃、尤其最高20℃并且适宜地最高5℃和/或与所述组件的运行温度偏差最高20℃，优选最高10℃并且尤其最高5℃和理想地最高2℃。在低温度的情况下运行时，在执行所述方法时到组件中的温度输入可以保持得特别低。恰恰对于易于受温度影响的部件可以特别优选根据本发明的方法的该扩展方案。此外，组件在电镀式连接与稍后的运行温度的尽可能低的温度差的情况下特别无应力地连接。在组件的所设置的运行温度的情况下在温度大于100℃时，可以在大于100℃的温度的情况下执行电镀式连接，其中，然后较适宜地使用基于熔盐的金属沉积方法。
较适当地，在根据本发明的方法中，所述至少一个开孔接触件借助于电化学的电镀方法电镀式连接。
在根据本发明的方法的该扩展方案中，有利地考虑导电的接触件，其中，借助于电化学的电镀方法将金属沉积到接触件上。适宜地，在根据本发明的方法中利用阳极，该阳极以这样的金属构成，所述金属在所述方法中应沉积在接触件上。有利地，该金属是铜。替代地和同样有利地，使用镍和/或银和/或金和/或锡作为金属。
替代地和同样优选地，在根据本发明的方法中，所述至少一个开孔接触件借助于无外部电流的方法、尤其借助于交换金属化和/或借助于还原金属化和/或借助于接触金属化电镀式连接。有利地，在无外部电流的电镀方法中，在以下运行温度下实现金属的沉积：所述温度大致等于组件的稍后的运行温度。由此降低或避免了机械应力。此外，也可以实现防侵蚀保护，尤其通过镍的或者镍和金的电镀实现防侵蚀保护。无外部电流的方法的另一个优点是，组件自身不必电接触。因此，不需要种子层（英语：“Seed layers”）的耗费的沉积和接触措施。
适宜地，在根据本发明的方法的一个有利的扩展方案中考虑以下接触件：所述接触件首先构造为这样的非连续的传导路径，严格来说也即非宏观传导的。更确切地说，所述接触件具有多个金属岛（Metallinseln），所述多个金属岛在一定程度上作为金属化岛在适宜地无外部电流的电镀方法期间才构造连续的传导路径。
优选地，在根据本发明的方法中，组件借助所述接触件与另外的构件和/或导电体和/或衬底接触，在此后所述接触件和/或所述组件和/或所述另外的构件和/或导电体和/或衬底设有电绝缘层。
有利地，在根据本发明的方法中，借助于浇铸和/或模制和/或由硅氧烷和/或聚合物或以硅氧烷和/或聚合物构成所述绝缘层。
在根据本发明的方法的一种有利的扩展方案中，考虑功率组件作为组件。
较适当地，在根据本发明的方法中，考虑具有至少一个晶体管、优选具有绝缘栅电极的双极型晶体管（英语：“insulated-gate bipolar transistor”IGBT（绝缘栅双极型晶体管））作为组件。
优选地，在根据本发明的方法中，考虑具有两个接触部的组件，所述两个接触部优选在所述组件的相互背离的侧、尤其平面侧上，其中，至少一个开孔接触件电镀式连接到所述接触部，尤其至少一个开孔接触件每接触部优选地分别按照根据本发明的方法如先前描述电镀式连接到所述接触部。
根据本发明的组件模块具有包括至少一个电接触部的组件。根据本发明，在电接触部上电镀式连接有至少一个开孔接触件。
特别有利地，根据本发明的组件模块借助根据本发明的方法如上描述构成。
在根据本发明的组件模块的一种扩展方案中，该组件模块堆叠式地以以下类型的堆栈实现，其中，该堆栈的层面借助印制电路板和/或衬底构成，组件借助接触件在所述印制电路板和/或衬底上连接。适宜地，为此全部层面的组件的接触部同时借助根据本发明的方法来接触。
在根据本发明的组件模块的另一种扩展方案中，多个组件共同在印制电路板或衬底的平面侧上连接到所述衬底或所述印制电路板。在该扩展方案中，也可以同时借助根据本发明的方法使所述多个组件接触。
附图说明
以下，根据在附图中示出的实施例更详细地阐述本发明。其中：
图1以原理略图在横截面中示出在执行用于制造根据本发明的组件模块的、第一实施例的根据本发明的方法的第一实施例之前，功率组件在陶瓷衬底上的布置，
图2以原理略图在横截面中示出在执行根据本发明的方法的第一步骤的情况下，根据图1的功率组件的布置，
图3以原理略图在横截面中示出在执行根据本发明的方法的第一步骤之后，根据图1的功率组件的布置，
图4示出图3中的剖面放大（A），连同该剖面放大中的细节（B），
图5以原理略图在横截面中示出在根据图1至4的方法步骤之后，根据本发明的组件模块，
图6以原理略图在横截面中示出在执行用于制造根据本发明的组件模块的、另一实施例的根据本发明的方法的另一实施例之前，功率组件在陶瓷衬底上的另一布置，
图7以原理略图在横截面中示出在执行根据本发明的方法的其他实施例的第一步骤的情况下，根据图6的功率组件的布置，以及
图8以原理略图在横截面中示出在根据图6和7的方法步骤之后，根据本发明的组件模块的其他实施例。
具体实施方式
在图1中示出的功率组件10是具有绝缘栅电极的双极型晶体管（英语：“insulated-gate bipolar transistor”：IGBT（绝缘栅双极型晶体管））并且具有第一平面侧20和第二平面侧30，它们相互背离。功率组件10的薄层式平面接触部40、50沿着第一平面侧20和第二平面侧30延伸，所述平面接触部构造为平面的芯片金属化部。在所示出的实施例中，功率组件10的在图1中布置在上侧的平面接触部40由铜组成，而功率组件10的布置在下侧的平面接触部50由银组成。原则上，上侧的平面接触部也可以由银或以银或由AlSiCu或以AlSiCu、其他金属或其他导电材料构成，而下侧的平面接触部也可以由金或以金或其他金属或其他导电材料构成。
为了接触这些平面接触部40、50，在这些平面接触部40、50上放置开孔材料的接触件60、70，所述接触件基本上平面地沿着平面接触部40、50延伸。在所示出的实施例中，接触件60、70导电地构造并且作为铜海绵（Kupferschwämme）实现。可理解的是，在另外的、自身未示出的实施例（所述实施例另外也相应于根据附图阐述的实施例）中，开孔接触件60、70也可以由其他的开孔的导电材料制成，例如构造为网络或编织网或其他多孔的结构的铝接触件、钛接触件或由其他金属或以其他金属构成的接触件。例如，也可以考虑以导电的材料局部涂覆的或掺以导电颗粒的海绵聚合物作为接触件。
功率组件10的平面接触部50之一朝向具有由氮化铝（AlN）组成的陶瓷芯100的陶瓷衬底90的另外的平面接触部80。原则上，陶瓷芯100可以在未自身示出的另外的实施例中由另一种陶瓷材料或者由印制电路板材料如FR4或其他载体组成，所述其他载体由硅酮和/或环氧树脂组成。陶瓷衬底90的另外的平面接触部80构造为表面的衬底金属化部，在所示出的实施例中构造为铜衬底金属化部。功率组件10的朝向陶瓷衬底90的平面接触部50和陶瓷衬底90的另外的平面接触部80相互平行地延伸，并且因此构成平坦的间隙。在朝向陶瓷衬底90的那个平面接触部50上布置的接触件70完全填充该平坦的间隙，并且全面积地附在功率组件10的平面接触部50上以及陶瓷衬底90的另外的平面接触部80上。因此，接触件70布置用于使功率组件10和陶瓷衬底90接触。
在另一方法步骤中，开孔接触件60、70与电极110、120接触（图2）。为此，一方面，第一电极110在以下接触件60上电接触，在该平面接触部的（远离功率组件10的）外侧130上电接触，其中所述接触件布置在背离陶瓷衬底90的平面接触部40上。另一电极、即第二电极120在铜制的平面接触部80上电接触，该电极位于以下接触件上：该接触件位于功率组件10和陶瓷衬底90之间。第一电极110同时用作固定元件，该固定元件在根据本发明的方法期间保证，由功率组件10、陶瓷衬底90和接触件60、70构成的功率模块的固定。为此，借助未详细示出的压力装置朝着陶瓷衬底90的方向对第一电极110施加力。替代地，在另一实施例（该实施例另外相应于所述示出的实施例）中，电极110可以不构造为固定元件，其中，接触件60、70的固定取而代之地借助导电的粘合剂来实现。基于粘合剂的导电性，接触件60、70可以简单地电接触。
由于开孔接触件与电极110、120的接触，金属、在所示出的实施例中铜借助自身已知的电化学电镀在开孔接触件60、70和平面接触部40、50、80之间的区域中沉积（图3）。在所示出的实施例中，所沉积的材料构成层132、134、136，所述层沿芯片金属化部或陶瓷衬底金属化部以及接触件60、70平面地延伸。由于该沉积，开孔接触件60、70分别同时与功率组件10连接。全部的接触件60、70在此同时与相应的接触部40、50、80连接，所述接触件分别附在所述接触部上。
在图4A中放大地在接近现实的剖面中示出功率组件10的、接触件70的和陶瓷衬底90的根据先前描述的实施例实现的组件接触部。该剖面示出位于功率组件10和陶瓷衬底90之间的接触件70的连接。图4B的细节示出接触件70到功率组件10的连接。可以看出，在接触件70的朝向功率组件10的一侧140与功率组件10的芯片金属化部的朝向接触件70的一侧150之间在电镀式连接的过程中已经发生在此之间的铜的晶粒生长（Kornwachstum），所述晶粒生长金属状地填充在此之间的区域160。
在后续的处理步骤中，以绝缘材料170、在所示出的情况下硅氧烷包围由陶瓷衬底90和所接触的功率组件10构成的根据本发明的功率模块（图5）。在其他的、自身未示出的实施例（该实施例此外相应于所示出的实施例）中，使用其他绝缘材料170、例如聚合物。
在图6至8中示出的另一实施例中，替代电化学电镀方法地，使用无外部电流的电镀方法。与此相应地，该实施例与在图1至5中示出的实施例在区别在于：（如自身已知的那样）对于无外部电流的电镀方法不需要与电极110、120的接触。因此，替代第一电极110地，存在仅仅一个固定元件180（图6）。固定元件180借助未详细示出的压力装置朝向陶瓷衬底90的方向被施加力，使得功率模块在所述方法期间保持在一起。替代地，在另一实施例（该实施例此外相应于所示出的实施例）中，不设置固定元件180，其中，接触件60'、70'的固定取而代之地借助粘合剂（例如借助小的粘合点）来实现。
借助无外部电流的电镀方法，借助自身已知的方式，金属、在所示出的实施例中铜在开孔接触件60'、70'和功率组件10之间的区域中沉积（图7）。在所示出的实施例中，所沉积的材料构成以下层，所述层沿芯片金属化部或陶瓷衬底金属化部以及接触件60'、70'平面地延伸。由于该沉积，开孔接触件60'、70'分别同时与功率组件10连接。
在另一实施例（该实施例此外相应于根据图6至8阐述的实施例）中考虑以下接触件：所述接触件首先构造为这样的非连续的导电路径。更确切地说，接触件具有多个铜制的金属岛，所述多个金属岛在一定程度上作为金属化岛在如先前描述的那样的无外部电流的电镀方法期间才构造连续的导电路径。
在后续的处理步骤中，以绝缘材料170、在所示出的情况下硅氧烷包围由陶瓷衬底90和所接触的功率组件10构成的根据本发明的功率模块（图8）。在其他、自身未示出的实施例（该实施例此外相应于所示出的实施例）中，使用其他绝缘材料170、例如聚合物。
类似于以上描述的实施例，在另外的实施例中，替代铜地，经电镀的金属也可以是其他的金属。
在其他自身未示出的实施例中，根据本发明的功率模块可以堆叠式地利用多个经堆叠的陶瓷衬底或其他的衬底以一种类型的堆栈实现。电子接触部可以在多个层面中同时借助根据本发明的方法来执行。替代地或附加地，多个组件也可以在单个的层面中借助根据本发明的方法同时接触。

Claims (16)

1.一种用于使具有至少一个电接触部（40，50）的组件（10）的电接触的方法，其中至少一个开孔接触件（60，70，60'，70'）电镀式连接到所述至少一个接触部（40，50）上。
2.根据权利要求1所述的方法，其中考虑这样的组件（10），在所述组件中，所述至少一个接触部（40，50）至少自身来看是平面部分和/或具有以下接触面：所述接触面的最大的平面延伸比所述接触部的垂直于所述接触面的延伸更大。
3.根据权利要求1所述的方法，其中，考虑导电的接触件（60，70，60'，70'）作为所述至少一个接触件（60，70，60'，70'）。
4.根据以上权利要求中任一项所述的方法，其中，所述至少一个开孔接触件（60，70，60'，70'）由多孔的材料构成或者以多孔的材料构成。
5.根据以上权利要求中任一项所述的方法，其中，所述至少一个开孔接触件（60，70，60'，70'）由金属或者以金属、尤其镍和/或银和/或金和/或锡和/或铜构成。
6.根据以上权利要求中任一项所述的方法，其中，所述至少一个开孔接触件（60，70，60'，70'）以编织网状的和/或泡沫状的和/或网络状的结构构成。
7.根据以上权利要求中任一项所述的方法，其中，所述至少一个开孔接触件（60，70，60'，70'）在以下温度的情况下电镀式连接到所述接触部（40，50），所述温度为最高100℃、优选地最高60℃、适宜地最高20℃并且理想地最高5℃和/或与所述组件的运行温度偏差最高50℃、优选地最高20℃，尤其最高10℃并且理想地最高5℃、优选地最高2℃。
8.根据以上权利要求中任一项所述的方法，其中，所述至少一个开孔接触件（60，70，60'，70'）借助于电化学的电镀方法电镀式连接。
9.根据以上权利要求中任一项所述的方法，其中，所述至少一个开孔接触件（60，70，60'，70'）借助于无外部电流的方法电镀式连接，尤其借助于交换金属化和/或借助于还原金属化和/或借助于接触金属化电镀式连接。
10.根据以上权利要求中任一项所述的方法，其中，所述组件（10）借助所述接触件（60，70，60'，70'）与另外的构件和/或导电体和/或与衬底（90）接触，在此之后所述接触件（60，70，60'，70'）和/或所述组件（10）和/或所述另外的构件和/或导电体和/或衬底（90）设有电绝缘层（170）。
11.根据上一权利要求所述的方法，其中，所述绝缘层（170）借助浇铸和/或模制和/或由硅氧烷和/或聚合物或者以硅氧烷和/或聚合物构成。
12.根据以上权利要求中任一项所述的方法，其中，考虑功率组件作为组件（10）。
13.根据以上权利要求中任一项所述的方法，其中，考虑具有至少一个晶体管、优选地IGBT的组件作为组件（10）。
14.根据以上权利要求中任一项所述的方法，其中，考虑具有两个接触部（40，50）的组件（10），所述两个接触部优选在所述组件（10）的相互背离的侧、尤其平面侧上，其中，对于各个接触部（40，50），至少一个开孔接触件（60，70，60'，70'）在所述接触部上电镀式连接，优选按照根据权利要求2至12所述的方法电镀式连接。
15.一种组件模块，所述组件模块具有包括至少一个电接触部（40，50）的组件，至少一个开孔接触件（60，70，60'，70'）在所述电接触部上电镀式连接。
16.根据上一权利要求所述的组件模块，所述组件模块借助于根据以上权利要求中任一项所述的方法构成。
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JP2018516464A (ja) 2018-06-21
WO2016193038A1 (de) 2016-12-08
JP6550477B2 (ja) 2019-07-24
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US11037862B2 (en) 2021-06-15
KR102062068B1 (ko) 2020-01-03

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