JP6550477B2 - 開気孔接触片のガルバニック接合による部品の電気接触方法およびそれに対応する部品モジュール - Google Patents
開気孔接触片のガルバニック接合による部品の電気接触方法およびそれに対応する部品モジュール Download PDFInfo
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- JP6550477B2 JP6550477B2 JP2017562693A JP2017562693A JP6550477B2 JP 6550477 B2 JP6550477 B2 JP 6550477B2 JP 2017562693 A JP2017562693 A JP 2017562693A JP 2017562693 A JP2017562693 A JP 2017562693A JP 6550477 B2 JP6550477 B2 JP 6550477B2
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- H01L2224/97—Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips the devices being connected to a common substrate, e.g. interposer, said common substrate being separable into individual assemblies after connecting
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- H01L23/373—Cooling facilitated by selection of materials for the device or materials for thermal expansion adaptation, e.g. carbon
- H01L23/3733—Cooling facilitated by selection of materials for the device or materials for thermal expansion adaptation, e.g. carbon having a heterogeneous or anisotropic structure, e.g. powder or fibres in a matrix, wire mesh, porous structures
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- H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
- H01L23/495—Lead-frames or other flat leads
- H01L23/49503—Lead-frames or other flat leads characterised by the die pad
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- H01L24/02—Bonding areas ; Manufacturing methods related thereto
- H01L24/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
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- H01L2924/11—Device type
- H01L2924/13—Discrete devices, e.g. 3 terminal devices
- H01L2924/1304—Transistor
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- H01L2924/11—Device type
- H01L2924/13—Discrete devices, e.g. 3 terminal devices
- H01L2924/1304—Transistor
- H01L2924/1306—Field-effect transistor [FET]
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- Engineering & Computer Science (AREA)
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- Condensed Matter Physics & Semiconductors (AREA)
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- Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Electrochemistry (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Automation & Control Theory (AREA)
- Electroplating Methods And Accessories (AREA)
- Die Bonding (AREA)
- Manufacturing Of Electrical Connectors (AREA)
Description
・複数の接触部を同時に形成すること。
・高い温度上昇なしに形成すること。
・高い圧力上昇なしに形成すること。
・数秒から数分までの時間範囲内で形成すること。
・接触部が大きな接触面を有すること。
・接触部が高い耐温性を有すること。
40 接触部
50 接触部
60,60’ 開気孔接触片
80 面接触部
90 セラミック基板
70,70’ 開気孔接触片
100 セラミックコア
110 電極
120 電極
130 外側面
140 側面
150 側面
160 介在領域
170 絶縁材料
180 固定要素
Claims (15)
- 少なくとも1つの電気接触部(40,50)を有する部品(10)の電気接触のための方法であって、
前記少なくとも1つの接触部(40,50)に少なくとも1つの開気孔接触片(60,70,60’,70’)がガルバニック接合され、
前記少なくとも1つの開気孔接触片(60,70,60’,70’)が、多孔質材料又は多孔質材料を含む材料から形成されている、方法。 - 少なくとも1つの電気接触部(40,50)を有する部品(10)の電気接触のための方法であって、
前記少なくとも1つの接触部(40,50)に少なくとも1つの開気孔接触片(60,70,60’,70’)がガルバニック接合され、
前記少なくとも1つの開気孔接触片(60,70,60’,70’)が、織物構造、発泡構造およびメッシュ構造の少なくとも1つで形成されている、方法。 - 前記少なくとも1つの接触部(40,50)が、少なくともそれ自体としては平らな部材である部品(10)、および前記少なくとも1つの接触部(40,50)が有する接触面の最大限の平面的広がりがその接触面に対して垂直方向の当該接触部の広がりよりも大きい部品(10)の少なくとも一方が使用される、請求項1または2記載の方法。
- 前記少なくとも1つの接触片(60,70,60’,70’)として、導電性の開気孔接触片(60,70,60’,70’)が使用される、請求項1または2記載の方法。
- 前記少なくとも1つの開気孔接触片(60,70,60’,70’)が、金属又は金属を含む材料から形成されている、請求項1乃至4の1つに記載の方法。
- 高々100℃である温度、および、前記部品の動作温度から高々20℃だけ偏差を有する温度の少なくとも一方において、前記少なくとも1つの開気孔接触片(60,70,60’,70’)が前記接触部(40,50)にガルバニック接合される、請求項1乃至5の1つに記載の方法。
- 前記少なくとも1つの開気孔接触片(60,70,60’,70’)が、電気化学的めっき法によりガルバニック接合される、請求項1乃至6の1つに記載の方法。
- 前記少なくとも1つの開気孔接触片(60,70,60’,70’)が、外部電流のない方法によりガルバニック接合される、請求項1乃至7の1つに記載の方法。
- 前記部品(10)が、前記接触片(60,70,60’,70’)により、
他の構成素子および電流導体の少なくとも一方に接触させられるか、
基板(90)に接触させられるか、
または、他の構成素子および電流導体の少なくとも一方と基板(90)に接触させられ、
その後に前記接触片(60,70,60’,70’)、前記部品(10)、前記他の構成素子、電流導体および基板(90)の少なくとも1つが電気絶縁層(170)を施される、請求項1乃至8の1つに記載の方法。 - 前記絶縁層(170)が、
キャスティングおよびモールドの少なくとも一方により形成されるか、
シロキサンおよびポリマーの少なくとも一方から形成されるか、またはシロキサンおよびポリマーの少なくとも一方を含んで形成されるか、
または、キャスティングおよびモールドの少なくとも一方により形成されるとともに、シロキサンおよびポリマーの少なくとも一方から形成されるか、またはシロキサンおよびポリマーの少なくとも一方を含んで形成される、
請求項9記載の方法。 - 前記部品(10)としてパワー部品が使用される、請求項1乃至10の1つに記載の方法。
- 前記部品(10)として、少なくとも1つのトランジスタを有する部品が使用される、請求項1乃至11の1つに記載の方法。
- 2つの接触部(40,50)を有する部品(10)が使用され、接触部(40,50)ごとに少なくとも1つの開気孔接触片(60,70,60’,70’)が該接触部にガルバニック接合される、請求項1乃至12の1つに記載の方法。
- 少なくとも1つの開気孔接触片(60,70,60’,70’)がガルバニック接合されている少なくとも1つの電気接触部(40,50)を有する部品を備えた部品モジュールであって、
前記少なくとも1つの開気孔接触片(60,70,60’,70’)が、多孔質材料又は多孔質材料を含む材料から形成されているか、又は、織物構造、発泡構造およびメッシュ構造の少なくとも1つで形成されている、部品モジュール。 - 請求項1乃至13の1つに記載の方法により形成されている請求項14記載の部品モジュール。
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
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DE102015210061.8 | 2015-06-01 | ||
DE102015210061.8A DE102015210061A1 (de) | 2015-06-01 | 2015-06-01 | Verfahren zur elektrischen Kontaktierung eines Bauteils und Bauteilmodul |
PCT/EP2016/061595 WO2016193038A1 (de) | 2015-06-01 | 2016-05-23 | Verfahren zur elektrischen kontaktierung eines bauteils mittels galvanischer anbindung eines offenporigen kontaktstücks und entsprechendes bauteilmodul |
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JP2018516464A JP2018516464A (ja) | 2018-06-21 |
JP6550477B2 true JP6550477B2 (ja) | 2019-07-24 |
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JP2017562693A Expired - Fee Related JP6550477B2 (ja) | 2015-06-01 | 2016-05-23 | 開気孔接触片のガルバニック接合による部品の電気接触方法およびそれに対応する部品モジュール |
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US (1) | US11037862B2 (ja) |
EP (1) | EP3281218A1 (ja) |
JP (1) | JP6550477B2 (ja) |
KR (1) | KR102062068B1 (ja) |
CN (1) | CN107660308B (ja) |
DE (1) | DE102015210061A1 (ja) |
WO (1) | WO2016193038A1 (ja) |
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DE102017203132A1 (de) * | 2017-02-06 | 2018-08-09 | Siemens Aktiengesellschaft | Leistungsmodul |
DE102017211619A1 (de) | 2017-02-08 | 2018-08-09 | Siemens Aktiengesellschaft | Verfahren zur elektrischen Kontaktierung und Leistungsmodul |
WO2018145968A1 (de) * | 2017-02-09 | 2018-08-16 | Siemens Aktiengesellschaft | Leistungsmodul |
DE102020134563A1 (de) | 2020-12-22 | 2022-06-23 | Danfoss Silicon Power Gmbh | Leistungsmodul und Verfahren zur Herstellung eines Leistungsmoduls |
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CH387809A (de) * | 1961-11-17 | 1965-02-15 | Bbc Brown Boveri & Cie | Lötverbindung an einem Halbleiterelement |
JPS5674932A (en) * | 1979-11-22 | 1981-06-20 | Hitachi Ltd | Semiconductor device and preparation method thereof |
JPS5732422A (en) * | 1980-08-06 | 1982-02-22 | Seiko Epson Corp | Electrochromic display device |
DE4328466C1 (de) | 1993-08-24 | 1995-04-13 | Siemens Ag | Siloxanhaltiges Gießharzsystem |
JP4259018B2 (ja) * | 2002-01-22 | 2009-04-30 | トヨタ自動車株式会社 | 半導体装置とその製造方法 |
JP4312465B2 (ja) | 2003-01-23 | 2009-08-12 | 株式会社荏原製作所 | めっき方法およびめっき装置 |
DE102004009296B4 (de) | 2004-02-26 | 2011-01-27 | Siemens Ag | Verfahren zum Herstellen einer Anordnung eines elektrischen Bauelements |
JP2006010843A (ja) | 2004-06-23 | 2006-01-12 | Brother Ind Ltd | 記録媒体の記録材除去装置 |
JP4596875B2 (ja) * | 2004-10-06 | 2010-12-15 | 関西電力株式会社 | 樹脂で被覆した高耐電圧半導体装置及びその製造方法 |
US7453139B2 (en) | 2005-12-27 | 2008-11-18 | Tessera, Inc. | Compliant terminal mountings with vented spaces and methods |
JP4997837B2 (ja) | 2006-06-12 | 2012-08-08 | 日産自動車株式会社 | 半導体素子の接合方法および半導体装置 |
US7626262B2 (en) * | 2006-06-14 | 2009-12-01 | Infineon Technologies Ag | Electrically conductive connection, electronic component and method for their production |
DE102007055017B4 (de) * | 2007-11-14 | 2010-11-04 | Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. | Verfahren zum Verbinden zweier Fügeflächen und Bauteil mit zwei verbundenen Fügeflächen |
JP2009164240A (ja) * | 2007-12-28 | 2009-07-23 | Panasonic Corp | 半導体装置 |
JP2010106223A (ja) * | 2008-10-31 | 2010-05-13 | Dow Corning Toray Co Ltd | 電気・電子部品用封止・充填剤および電気・電子部品 |
DE102008055134A1 (de) * | 2008-12-23 | 2010-07-01 | Robert Bosch Gmbh | Elektrisches oder elektronisches Verbundbauteil sowie Verfahren zum Herstellen eines elektrischen oder elektronischen Verbundbauteils |
DE102009008926B4 (de) * | 2009-02-13 | 2022-06-15 | Danfoss Silicon Power Gmbh | Verfahren zur Schaffung einer hochtemperatur- und temperaturwechselfesten Verbindung eines Halbleiterbausteins mit einem Verbindungspartner und einer Kontaktlasche unter Verwendung eines temperaturbeaufschlagenden Verfahrens |
DE102011106294A1 (de) * | 2011-07-01 | 2013-01-03 | Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. | Verfahren zur wiederlösbaren, stoffschlüssigen Verbindung mindestens zweier Körper und dessen Verwendung sowie entsprechende Verbundsysteme |
JP2014097529A (ja) * | 2012-10-18 | 2014-05-29 | Fuji Electric Co Ltd | 発泡金属による接合方法、半導体装置の製造方法、半導体装置 |
JP6551909B2 (ja) * | 2013-10-09 | 2019-07-31 | 学校法人早稲田大学 | 電極接続方法及び電極接続構造 |
WO2015086184A1 (en) | 2013-12-13 | 2015-06-18 | Abb Technology Ag | Semiconductor stack arrangement and semiconductor module |
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2015
- 2015-06-01 DE DE102015210061.8A patent/DE102015210061A1/de not_active Ceased
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2016
- 2016-05-23 WO PCT/EP2016/061595 patent/WO2016193038A1/de active Application Filing
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- 2016-05-23 EP EP16726297.1A patent/EP3281218A1/de not_active Withdrawn
- 2016-05-23 US US15/578,867 patent/US11037862B2/en active Active
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CN107660308B (zh) | 2021-09-17 |
US20180158757A1 (en) | 2018-06-07 |
JP2018516464A (ja) | 2018-06-21 |
DE102015210061A1 (de) | 2016-12-01 |
KR20180014081A (ko) | 2018-02-07 |
CN107660308A (zh) | 2018-02-02 |
WO2016193038A1 (de) | 2016-12-08 |
KR102062068B1 (ko) | 2020-01-03 |
US11037862B2 (en) | 2021-06-15 |
EP3281218A1 (de) | 2018-02-14 |
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