JPS5674932A - Semiconductor device and preparation method thereof - Google Patents
Semiconductor device and preparation method thereofInfo
- Publication number
- JPS5674932A JPS5674932A JP15065879A JP15065879A JPS5674932A JP S5674932 A JPS5674932 A JP S5674932A JP 15065879 A JP15065879 A JP 15065879A JP 15065879 A JP15065879 A JP 15065879A JP S5674932 A JPS5674932 A JP S5674932A
- Authority
- JP
- Japan
- Prior art keywords
- substrate
- pellet
- solder
- porous material
- bonded
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L24/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
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- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L24/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
- H01L24/29—Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
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- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L24/31—Structure, shape, material or disposition of the layer connectors after the connecting process
- H01L24/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
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- H—ELECTRICITY
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- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/02—Bonding areas; Manufacturing methods related thereto
- H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
- H01L2224/04026—Bonding areas specifically adapted for layer connectors
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- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L2224/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
- H01L2224/29—Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
- H01L2224/29001—Core members of the layer connector
- H01L2224/29099—Material
- H01L2224/291—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
- H01L2224/29101—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of less than 400°C
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- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L2224/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
- H01L2224/29—Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
- H01L2224/29001—Core members of the layer connector
- H01L2224/29099—Material
- H01L2224/29198—Material with a principal constituent of the material being a combination of two or more materials in the form of a matrix with a filler, i.e. being a hybrid material, e.g. segmented structures, foams
- H01L2224/29298—Fillers
- H01L2224/29499—Shape or distribution of the fillers
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- H01L2224/42—Wire connectors; Manufacturing methods related thereto
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- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
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- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/484—Connecting portions
- H01L2224/48463—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a ball bond
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- H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
- H01L2224/732—Location after the connecting process
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- H01L2224/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
- H01L2224/8319—Arrangement of the layer connectors prior to mounting
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- H01L2224/838—Bonding techniques
- H01L2224/8385—Bonding techniques using a polymer adhesive, e.g. an adhesive based on silicone, epoxy, polyimide, polyester
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- H01L2924/01047—Silver [Ag]
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- H01L2924/013—Alloys
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- H01L2924/078—Adhesive characteristics other than chemical
- H01L2924/07802—Adhesive characteristics other than chemical not being an ohmic electrical conductor
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- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/151—Die mounting substrate
- H01L2924/1515—Shape
- H01L2924/15153—Shape the die mounting substrate comprising a recess for hosting the device
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/151—Die mounting substrate
- H01L2924/15165—Monolayer substrate
Abstract
PURPOSE:To prevent cavitation from generating in a brazing filler and bonding surface and to obtain an effective bonding strength and a radiation characteristics by a method wherein a substrate and a pellet are bonded through a metallic porous material having inner pores filled with a brazing filler. CONSTITUTION:A thin metallic porous material 8 having a same dimension as that of a semiconductor pellet 1, a soler foil 9 and a pellet 1 having a Ti-Ni-Ag plating layer 2 at the rear side are laid upon a substrate 3 having a Ni layer 4 on its surface. When the solder 9 is melted by heating from an underneath of the substrate 3, the solder 9 decends filling a void 8a of the porous material 8 with solder 9 by mens of a capillarity and reaches the substrate 3 and the pellet 1 is bonded to the substrate 3. At this time, the air in pores is pushed out sequentially downward and no cavitation is produced, thus, bonding strength and heat radiation efficiency being not lowered utterly.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP15065879A JPS5674932A (en) | 1979-11-22 | 1979-11-22 | Semiconductor device and preparation method thereof |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP15065879A JPS5674932A (en) | 1979-11-22 | 1979-11-22 | Semiconductor device and preparation method thereof |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS5674932A true JPS5674932A (en) | 1981-06-20 |
Family
ID=15501655
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP15065879A Pending JPS5674932A (en) | 1979-11-22 | 1979-11-22 | Semiconductor device and preparation method thereof |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS5674932A (en) |
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS57189638A (en) * | 1981-05-20 | 1982-11-22 | Yakult Honsha Co Ltd | Production of liquid fermented milk |
JPS6163838U (en) * | 1984-09-29 | 1986-04-30 | ||
JP2009158816A (en) * | 2007-12-27 | 2009-07-16 | Rohm Co Ltd | Semiconductor apparatus |
WO2016193038A1 (en) * | 2015-06-01 | 2016-12-08 | Siemens Aktiengesellschaft | Method for electrically contacting a component by means of galvanic connection of an open-pored contact piece, and corresponding component module |
-
1979
- 1979-11-22 JP JP15065879A patent/JPS5674932A/en active Pending
Cited By (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS57189638A (en) * | 1981-05-20 | 1982-11-22 | Yakult Honsha Co Ltd | Production of liquid fermented milk |
JPH0117656B2 (en) * | 1981-05-20 | 1989-03-31 | Yakult Honsha Kk | |
JPS6163838U (en) * | 1984-09-29 | 1986-04-30 | ||
JP2009158816A (en) * | 2007-12-27 | 2009-07-16 | Rohm Co Ltd | Semiconductor apparatus |
WO2016193038A1 (en) * | 2015-06-01 | 2016-12-08 | Siemens Aktiengesellschaft | Method for electrically contacting a component by means of galvanic connection of an open-pored contact piece, and corresponding component module |
US11037862B2 (en) | 2015-06-01 | 2021-06-15 | Siemens Aktiengesellschaft | Method for electrically contacting a component by galvanic connection of an open-pored contact piece, and corresponding component module |
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