JPS55127027A - Semiconductor device - Google Patents

Semiconductor device

Info

Publication number
JPS55127027A
JPS55127027A JP3427779A JP3427779A JPS55127027A JP S55127027 A JPS55127027 A JP S55127027A JP 3427779 A JP3427779 A JP 3427779A JP 3427779 A JP3427779 A JP 3427779A JP S55127027 A JPS55127027 A JP S55127027A
Authority
JP
Japan
Prior art keywords
antimony
soldering layer
tin
percentage
preferable
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP3427779A
Other languages
Japanese (ja)
Inventor
Tsukasa Hattori
Hiroyuki Baba
Osamu Usuda
Kisaku Nakamura
Akio Hori
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Tokyo Shibaura Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp, Tokyo Shibaura Electric Co Ltd filed Critical Toshiba Corp
Priority to JP3427779A priority Critical patent/JPS55127027A/en
Publication of JPS55127027A publication Critical patent/JPS55127027A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L24/31—Structure, shape, material or disposition of the layer connectors after the connecting process
    • H01L24/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector

Abstract

PURPOSE: To prevent the generation of heat fatigue and the element breakage by the material constitutes a connecting part by connecting a semiconductor element on an element distributing base floor through a soldering layer made by tin and antimony as the principal ingredient.
CONSTITUTION: A semiconductor element 1 and an element distributing base floor 2 are connected by a soldering layer 3 made by tin and antimony as the principal ingredient through nickel layers 1a and 1b. It is preferable for the soldering layer to contain antimony having the weight of 6.0 through 11.5 in percentage. In addition to the above antimony, it is also preferable for the soldering layer to contain at least either one of gold, silver, nickel or cupper, wherein the weight is 2 or less in percentage. In this way, the generation of heat fatigue and element crack by heat distortion will remarkably be reduced.
COPYRIGHT: (C)1980,JPO&Japio
JP3427779A 1979-03-26 1979-03-26 Semiconductor device Pending JPS55127027A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP3427779A JPS55127027A (en) 1979-03-26 1979-03-26 Semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP3427779A JPS55127027A (en) 1979-03-26 1979-03-26 Semiconductor device

Publications (1)

Publication Number Publication Date
JPS55127027A true JPS55127027A (en) 1980-10-01

Family

ID=12409659

Family Applications (1)

Application Number Title Priority Date Filing Date
JP3427779A Pending JPS55127027A (en) 1979-03-26 1979-03-26 Semiconductor device

Country Status (1)

Country Link
JP (1) JPS55127027A (en)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS58500463A (en) * 1981-03-23 1983-03-24 モトロ−ラ・インコ−ポレ−テッド Semiconductor devices including unplated packages
JPS6197843A (en) * 1984-10-18 1986-05-16 Sanyo Electric Co Ltd Semiconductor device
WO1999050901A1 (en) * 1998-03-30 1999-10-07 Yamatake Corporation Soldering material for die bonding
WO2023139976A1 (en) * 2022-01-20 2023-07-27 株式会社日立パワーデバイス Solder and semiconductor device

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS4963382A (en) * 1972-10-20 1974-06-19
JPS526468A (en) * 1975-07-04 1977-01-18 Sumitomo Metal Mining Co Ltd Brazing material
JPS52106272A (en) * 1976-03-03 1977-09-06 Hitachi Ltd Semiconductor device

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS4963382A (en) * 1972-10-20 1974-06-19
JPS526468A (en) * 1975-07-04 1977-01-18 Sumitomo Metal Mining Co Ltd Brazing material
JPS52106272A (en) * 1976-03-03 1977-09-06 Hitachi Ltd Semiconductor device

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS58500463A (en) * 1981-03-23 1983-03-24 モトロ−ラ・インコ−ポレ−テッド Semiconductor devices including unplated packages
JPS6197843A (en) * 1984-10-18 1986-05-16 Sanyo Electric Co Ltd Semiconductor device
JPH033937B2 (en) * 1984-10-18 1991-01-21 Sanyo Electric Co
WO1999050901A1 (en) * 1998-03-30 1999-10-07 Yamatake Corporation Soldering material for die bonding
KR100361591B1 (en) * 1998-03-30 2002-11-21 야마타케 코포레이션 Soldering material for die bonding
US6656422B2 (en) 1998-03-30 2003-12-02 Yamatake Corporation Die-bonding solder materials
WO2023139976A1 (en) * 2022-01-20 2023-07-27 株式会社日立パワーデバイス Solder and semiconductor device

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