JP2008010703A - 半導体装置の部品間接合方法 - Google Patents
半導体装置の部品間接合方法 Download PDFInfo
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- JP2008010703A JP2008010703A JP2006180770A JP2006180770A JP2008010703A JP 2008010703 A JP2008010703 A JP 2008010703A JP 2006180770 A JP2006180770 A JP 2006180770A JP 2006180770 A JP2006180770 A JP 2006180770A JP 2008010703 A JP2008010703 A JP 2008010703A
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Abstract
【解決手段】金属ナノ粒子,金属ナノ粒子の常温での凝集を抑制する有機分散材,加熱により有機分散材と反応する分散材捕捉材および前記分散材と分散材捕捉材との反応物質を捕捉して揮散させる揮発性有機成分を含む金属ペースト5を用いて半導体装置の絶縁基板2/半導体チップ3/ヒートスプレッダ4の部品間を導電,伝熱接合する接合方法において、接合部品の接合面域に前記の金属ペーストを塗布した状態で、接合層5の層厚に対応する線径の金属コア6を分散配置して重ね合わせた上で、続く加熱工程を経て部品間を接合する。これにより、金属コア6をスペーサとして部品間に前記揮発性有機成分の熱分解ガスを逃がす蒸散経路を確保して、接合層内に未接合部が生じるのを防止できる。
【選択図】図1
Description
ここで、前記のナノ金属ペーストを用いて金属部材(バルク材)の間を接合する場合に、従来の方法では一方の金属部材の接合面にナノ金属ペーストをスクリ−ン印刷法などにより塗布し、この上に相手側の金属部材を重ね合わせて軽い加圧力を加えた仮組立状態で、この仮組立体をリフロー炉に搬入して接合を行うようにしている。なお、加熱に伴う金属ナノ粒子間,および金属ナノ粒子と被接合金属部材との間の接合メカニズム,およびそのキュアー条件,接合強度,耐熱温度等の特性については、先記の非特許文献1および特許文献2に詳しく述べられており、加熱により活性化した金属ナノ粒子間,および金属ナノ粒子と金属粉,接合金属板との間で低温焼結による溶着/焼結(架橋)が進行し、最終的に抵抗率が低いマトリックス構造の接合層が形成される。
小田 正明,「ナノ金属粒子」,エレクトロニクス実装学会誌,2002年,vol5,No6,p523−528
前記の金属ペーストを被接合部品の接合面に塗布した状態で、部品の対向面間に金属コア材を分散介挿して重ね合わせ、続く加熱工程を経て接合するものとする(請求項1)。
また、本発明では、半導体装置の絶縁基板とその導体パターンに接合する半導体チップ、ないしは半導体チップとその上面に接合するヒートスプレッダを被接合部品として、前記した接合方法を適用して半導体装置を組み立てるようにする(請求項4)。
すなわち、図示実施例の半導体デバイスでは、絶縁基板2の導体パターン2bと半導体チップ3との間、および半導体チップ2とその上面側に積層したヒートスプレッダ4との間が先記したナノ金属ペーストを用いて接合されており、その接合層を符号5で、また後記のように被接合部品間の接合面域に分散介挿した金属コアを符号6で表している。
この加熱工程では、先述のように有機分散材と分散材捕捉材との反応により裸になって活性化した金属ナノ粒子同士,および金属ナノ粒子と金属粉,被接合部品との間で溶着,焼結(架橋)が進行し、最終的には絶縁基板2/半導体チップ3/ヒートスプレッダ4の部品相互間に、金属コア6の線径に対応する厚さでマトリックス構造の接合層5が形成される。しかも、この接合過程では前記金属コア6の介在によって部品相互間には周囲に通じる蒸散経路が確保されている。これにより、金属ナノ粒子の溶着,焼結が進行する過程で熱分解した有機成分は、特に接合面の中央面域においても被接合部品の間に封じ込められることなく、前記の蒸散経路を通じて周囲に蒸散するようになる。その結果として、接合層5には層中に未接合部分を残すことなく、接合面の全域で部品間を適正に接合することができて半導体デバイスの信頼性が向上する。
2b 導体パターン
3 半導体チップ
4 ヒートスプレッダ
5 接合層(ナノ金属ペースト)
6 金属コア
Claims (4)
- 金属ナノ粒子,金属ナノ粒子の常温での凝集を抑制する有機分散材,加熱により有機分散材と反応する分散材捕捉材および前記分散材と分散材捕捉材との反応物質を捕捉して揮散させる揮発性有機成分を含む金属ペーストを用いた半導体装置の部品間接合方法であって、表面が金属母材である被接合部品の接合面域に前記金属ペーストを塗布して被接合部品を重ね合わせた状態で加熱し、この加熱により金属ナノ粒子を低温焼結させて部品間を導電,伝熱接合するようにした接合方法において、
前記金属ペーストを被接合部品の接合面に塗布した状態で、部品の対向面間に金属コア材を分散介挿して重ね合わせ、続く加熱工程を経て接合することを特徴とする半導体装置の部品間接合方法。 - 請求項1に記載の接合方法において、金属ペーストの成分である金属ナノ粒子がAgナノ粒子,もしくはCuナノ粒子であることを特徴とする半導体装置の部品間接合方法。
- 請求項1に記載の接合方法において、金属コア材が、被接合部品間の接合層厚さに対応した線径の円柱状銅材であることを特徴とする半導体装置の部品間接合方法。
- 請求項1ないし3のいずれかの項に記載の接合方法において、金属ペーストを介して面接合される被接合部品が、絶縁基板とその導体パターンに接合する半導体チップ、ないしは半導体チップとその上面に接合するヒートスプレッダであることを特徴とする半導体装置の部品間接合方法。
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