JP4638382B2 - 接合方法 - Google Patents

接合方法 Download PDF

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Publication number
JP4638382B2
JP4638382B2 JP2006156085A JP2006156085A JP4638382B2 JP 4638382 B2 JP4638382 B2 JP 4638382B2 JP 2006156085 A JP2006156085 A JP 2006156085A JP 2006156085 A JP2006156085 A JP 2006156085A JP 4638382 B2 JP4638382 B2 JP 4638382B2
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Japan
Prior art keywords
joining
metal
powder
metal powder
bonding
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JP2006156085A
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JP2007324523A (ja
Inventor
俊典 小柏
正幸 宮入
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Tanaka Kikinzoku Kogyo KK
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Tanaka Kikinzoku Kogyo KK
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Priority to JP2006156085A priority Critical patent/JP4638382B2/ja
Priority to PCT/JP2007/061266 priority patent/WO2007142175A1/ja
Priority to EP07744651.6A priority patent/EP1916709A4/en
Priority to CN2007800008088A priority patent/CN101341585B/zh
Priority to US12/063,264 priority patent/US7789287B2/en
Priority to KR1020087001991A priority patent/KR100976026B1/ko
Publication of JP2007324523A publication Critical patent/JP2007324523A/ja
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Publication of JP4638382B2 publication Critical patent/JP4638382B2/ja
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Description

本発明は、一対の接合部材を比較的低温で接合するための方法に関する。具体的には、チップの基板へのダイボンド、フリップチップ接合を低温で行なうための方法に関する。
ろう材を用いたろう付け法が、各種部材の接合方法として広く用いられている。特に、高周波・光モジュールなどで用いられる半導体チップの基板へのダイボンドするためには、部品の汚染を防止するためフラックスレスのろう材が使用されており、そのようなろう材としてＡｕＳｎ系ろう材が一般に使用されている（例えば、特許文献１）。
特開２００４−００６５２１号公報
通常、ろう材を使用するろう付け法においては、ろう材を一方の接合部材（例えば、半導体チップ）に融着した後、これを他方の接合部材（例えば、基板）に載置して、ろう材の融点以上の温度に加熱してろう材を溶融・凝固させている。この接合時の温度は、使用するろう材の融点（ＡｕＳｎ系ろう材の融点は約２８０℃である）を考慮して３００℃以上の温度に設定されることが多い。
しかしながら、接合温度を高温とすると、接合後、常温へ冷却する際に生じる熱応力が大きくなり、その接合部材への影響が懸念される。例えば、半導体チップのダイボンドにおいては、熱応力により半導体チップの電気的特性の変動が生じるおそれがある。従って、接合部材によっては、熱応力の低減のため接合温度ができるだけ低い方法が望まれる。本発明は、以上のような背景のもとになされたものであり、比較的低温で十分な接合強度を有する接合方法を提供することを目的とする。具体的には３００℃以下の温度でも接合可能な方法を提供する。
本発明者等は、上記課題を解決すべく、従来のろう付けに替わる接合方法の検討を行った。そして、検討から、所定の構成を有する金属ペーストを使用する接合方法を見出した。
即ち、本発明は、一対の接合部材を接合する方法において、下記工程を含むことを特徴とする方法である。
（ａ）一方の接合部材に、純度が９９．９重量％以上であり、平均粒径が０．００５μｍ〜１．０μｍである金粉、銀粉、白金粉、又はパラジウム粉から選択される一種以上の金属粉末と、有機溶剤とからなる金属ペーストを塗布する工程。
（ｂ）前記金属ペーストを乾燥し、８０〜３００℃の温度で焼結させて金属粉末焼結体とする工程。
（ｃ）前記金属粉末焼結体を介して前記一方の接合部材と他方の接合部材とを配置し、少なくとも金属粉末焼結体を加熱しながら一方向又は双方向から加圧して接合する工程。
本発明に係る接合方法は、ろう材に替えて金属ペーストを使用する接合方法である。この方法では、接合部材に塗布された金属ペーストを加熱しながら加圧し、これによりペースト中の金属粉末を塑性変形させつつ結合させ密な接合部を形成して接合を行なう。そして、接合工程での金属粉末の結合を容易に進行させるため、加圧の前にペーストを焼結して金属粉末焼結体とするものである。以下、本発明に係る方法について、より詳細に説明する。
本発明において使用する金属ペーストとしては、純度が９９．９重量％以上であり、平均粒径が０．００５μｍ〜１．０μｍである金粉、銀粉、白金粉、又はパラジウム粉から選択される一種以上の金属粉に、有機溶剤を混合したものが用いられる。金属粉の純度について９９．９重量％以上の高純度を要求するのは、純度が低いと粉末の硬度が上昇し、塑性変形し難くなるからである。また、金属粉の平均粒径については、１．０μｍを超える粒径の金属粉では、後述する焼結の際、好ましい近接状態を発現させ難くなるからである。一方、０．００５μｍを下限とするのはこの粒径未満の粒径では、ペーストとしたときに凝集しやすく、取扱いが困難となることを考慮するものである。尚、金、銀、白金、又はパラジウムのいずれかの粉末からなるのは、ダイボンディング等の半導体チップの接合に使用する場合には、金属ペーストにも導電性が要求されるが、これらの金属は導電性が良好でだからである。
金属ペーストを構成する有機溶剤としては、エステルアルコール、ターピネオール、パインオイル、ブチルカルビトールアセテート、ブチルカルビトール、カルビトールが好ましい。例えば、好ましいエステルアルコール系の有機溶剤として、２，２，４−トリメチル−３−ヒドロキシペンタイソブチレート（Ｃ１２Ｈ２４Ｏ３）、を挙げることができる。これらの溶剤は、比較的低温で乾燥させることができるからである。
尚、金属ペーストは、アクリル系樹脂、セルロース系樹脂、アルキッド樹脂から選択される一種以上を含有していても良い。これらの樹脂等を更に加えると金属ペースト中の金属粉の凝集が防止されてより均質となる。尚、アクリル系樹脂としては、メタクリル酸メチル重合体を、セルロース系樹脂としては、エチルセルロースを、アルキッド樹脂としては、無水フタル酸樹脂を、それぞれ挙げることができる。そして、これらの中でも特にエチルセルロースが好ましい。
金属ペーストを接合部材に塗布する方法としては、スピンコート法、スクリーン印刷法、インクジェット法、ペーストを滴下後にヘラ等で広げる方法等、接合部の大きさに対応させて種々の方法を用いることができる。
塗布した金属ペーストを乾燥させるのは、ペースト中の有機溶剤を除去するためである。この乾燥は、−２０℃以上５℃以下で行なうのが好ましい。乾燥工程における雰囲気を減圧雰囲気としても良い。これにより乾燥過程において大気中の水分が金属粉末表面に結露するのを防止することができる。減圧雰囲気とする場合、好ましくは１００Ｐａ以下、より好ましくは１０Ｐａ以下とするが、この雰囲気の真空度は、金属ペースト中の有機溶剤の揮発性に応じて設定する。
本発明では、金属ペーストを塗布・乾燥した後に焼結することを要する。これにより、ペースト中の金属粒子どうし、及び接合部材の接合面（ペースト塗布面）と金属粒子との間に、互いに点接触した近接状態が形成され、金属ペーストは金属粉末焼結体となる。この金属粉末焼結体は、後述の接合時で加熱・加圧されることで、接触部に塑性変形が生じると共に、その変形界面で金属原子間の結合が生じ、焼結体は緻密な接合部となる。この点、焼結することなしにペーストを加圧しても粒子間隙が広がり、粒子同士の結合が生ぜず接合ができない。
この焼結の温度は、８０〜３００℃とするのが好ましい。８０℃未満では上記のような点接触が生じないからである。一方、３００℃を超える温度で焼結すると、焼結が過度に進行し、金属粉末間のネッキングが進行して強固に結合してしまい、その後に加圧しても緻密な接合部にならないことに加え、加圧の際に歪が残留し易くなるからである。また、そもそも本発明は、接合部材を保護する観点から３００℃以下での接合を目指すものだからである。尚、焼結の際の加熱時間は、３０〜１２０分とするのが好ましい。短時間では焼結炉の温度が安定せず十分な焼結ができず、また、あまりに長時間とすると生産性が損なわれるからである。また、この焼結は、圧力の負荷のない状態で行なうのが好ましい。
上記焼結を行った後の加圧による接合は、金属ペーストを塗布した接合部材と、他方の接合部材とを重ねて加圧する。加圧の圧力は、接合部の緻密化のため、金属粉末焼結体の降伏強度より大きくするのが好ましい。また、この加圧は、いずれかの接合部際から一方向で行っても良いし、双方向から行っても良い。
そして、この接合工程の際には、金属粉末焼結体を加熱しながら加圧することが必要である。加熱しない場合、接合部の緻密化が不十分となり、接合強度が不足するからである。このときの加熱温度は、８０〜３００℃とするのが好ましい。８０℃未満では接合ができないからであり、３００℃を超えると冷却時の熱歪の影響が大きくなるからである。
また、接合工程においては、加熱に加えて超音波を印加するのが好ましい。加熱又は加熱と超音波との組合わせにより、金属粉末の塑性変形及び結合を促進し、より強固な接合部を形成することができる。超音波を印加する場合、その条件は、振幅０．５〜５μｍとし、印加時間を０．５〜３秒とするのが好ましい。過大な超音波印加は接合部材を損傷させるからである。
接合工程における上記加熱及び超音波印加は、その目的から少なくとも金属粉末焼結体に対して行なえばよいが、接合部材全体に行っても良い。加熱の方法としては、接合部材を加圧する際の工具からの伝熱を利用するのが簡易である。同様に、超音波の印加は、接合部材を加圧する工具から超音波発振させるのが簡易である。
以上説明したように、本発明によれば、各種の接合部材を比較的低温で接合することができ、接合後の冷却過程における熱応力から接合部材を保護することができる。本発明は、熱応力の影響が懸念される半導体チップ等を基板へ接合する際に有用であり、そのダイボンディング、フリップチップ接合等へ適用することができる。尚、フリップチップ接合に適用するに当たっては、半導体チップのバンプ形成のために本発明を適用することができる。
以下、本発明の好適な実施形態を説明する。図１は、本実施形態で行った、半導体チップ（ＧａＡｓチップ）の基板への接合工程を概略示すものである。以下、図を参照しつつ各実施例における接合工程について説明する。
実施例１：まず、半導体チップ１０に金属ペースト２０を塗布した。半導体チップ１０は、その表面に、Ｔｉ（０．５μｍ）、Ｎｉ（１μｍ）、Ａｕ（１μｍ）、Ｐｄ（１μｍ）を予めめっきしている。使用する金属ペーストは、湿式還元法により製造された純度９９．９９重量％の金粉（平均粒径：０．３μｍ）と、有機溶剤としてエステルアルコール（２，２，４−トリメチル−３−ヒドロキシペンタイソブチレート（Ｃ１２Ｈ２４Ｏ３））を混合して調整されたものである。金属ペーストは面積０．００３４ｍｍ２で、チップ上に１００箇所塗布した。
金属ペースト２０を塗布した後、これを乾燥器にて−１０℃で真空乾燥した。そして、チップを電気炉にて、２３０℃で３０分加熱して金属ペーストを焼結し、粉末金属焼結体２１とした。
焼結処理後、Ｎｉ板３０（Ａｕ（１μｍ）、Ｐｄ（１μｍ）を予めめっきしたもの）を、半導体チップ１０の上に載置し、加熱及び加圧して接合した。このときの加圧条件は、一つの焼結体当り０．２Ｎとした。また、加熱は工具からの伝熱により２３０℃となるようにした。この接合工程での加熱及び加圧時間は、１０分間とした。
実施例２：ここでは、焼結体の加圧・加熱と同時に超音波印加を行い接合した。実施例１と同様にして、半導体チップに金属ペーストを塗布・乾燥し、焼結を行った後、これにＮｉ板を載置し、実施例１と同様に過熱・加圧を行った（加圧の圧力は一つの焼結体当り０．３３Ｎとした。）。超音波は、工具より印加し、振幅３．２μｍ、出力３．５Ｗ、印加時間は１秒とした。
以上の各実施例において、焼結を行った後の金属粉末焼結体、及び、接合後の接合部の組織についての観察結果を図２に示す。図からわかるように、焼結により、金属粉末は点接触に近い状態で近接している。そして、その後の加圧及び加熱により緻密な組織を示す。特に、超音波を印加することにより、内部は微細な結晶組織を示すことがわかる。尚、本実施形態の予備的試験として、焼結を４００℃で行なったときの金属粉末焼結体の組織を図３に示すが、焼結温度を４００℃とすることで金属粒子の結合が進行しているのがわかる。そして、この状態で加圧を行なったところ、接合が不可能であった。つまり、接合前の焼結を適切に行うことが必要である。
次に、各実施例で行った接合に関して、接合強度の検討を行った。この検討は、図４で示すように、横方向から一定速度でブレードをチップに当接、進行させ、破断（チップの剥離）が生じたときの応力を測定し、この値と破断後の接合部面積とから単位面積あたりの強度と算出した。この結果を表１に示す。
Figure 0004638382
表１から、各実施例による接合強度は、いずれも１００ＭＰａを超えている。電子部品の接合等を考慮すれば十分な接合強度といえる。また、接合強度は、接合時に超音波印加を併用することにより、向上することがわかる。
本実施形態における接合工程を概略説明する図。 焼結後の金属粉末焼結体及び接合後の接合部の組織観察結果。 焼結を４００℃で行なったときの金属粉末焼結体の組織を示す図。 接合強度の試験方法を示す図。

Claims (2)

  1. 一対の接合部材を接合する方法において、下記工程を含むことを特徴とする方法。
    （ａ）一方の接合部材に、純度が９９．９重量％以上であり、平均粒径が０．００５μｍ〜１．０μｍである金粉、銀粉、白金粉、又はパラジウム粉から選択される一種以上の金属粉末と、有機溶剤とからなる金属ペーストを塗布する工程。
    （ｂ）前記金属ペーストを乾燥し、８０〜３００℃の温度で焼結させて金属粉末焼結体とする工程。
    （ｃ）前記金属粉末焼結体を介して前記一方の接合部材と他方の接合部材とを配置し、少なくとも金属粉末焼結体を加熱すると共に、超音波を印加しながら一方向又は双方向から加圧して接合する工程。
  2. （ｃ）工程での加熱温度を８０〜３００℃とする請求項１記載の接合方法。
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US7789287B2 (en) 2010-09-07
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