CN101341585A - 接合方法 - Google Patents

接合方法 Download PDF

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Publication number
CN101341585A
CN101341585A CNA2007800008088A CN200780000808A CN101341585A CN 101341585 A CN101341585 A CN 101341585A CN A2007800008088 A CNA2007800008088 A CN A2007800008088A CN 200780000808 A CN200780000808 A CN 200780000808A CN 101341585 A CN101341585 A CN 101341585A
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Prior art keywords
metal
powder
thickener
engagement member
heating
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CN101341585B (zh
Inventor
小柏俊典
宫入正幸
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Tanaka Kikinzoku Kogyo KK
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Tanaka Kikinzoku Kogyo KK
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Abstract

本发明提供一种接合方法，即在半导体芯片的芯片键合等中可以在较低的温度下获得具有足够的接合强度的接合部的方法。在半导体芯片(10)上涂布由纯度在99.9重量％以上、平均粒径为0.005μm～1.0μm的选自金粉、银粉、铂粉或钯粉的一种以上的金属粉末和有机溶剂形成的金属糊料(20)。涂布金属糊料(20)后，将其用干燥器真空干燥，将芯片在230℃加热30分钟，将金属糊料烧结，制成粉末金属烧结体(21)。接着，将Ni板(30)置于半导体芯片(10)上，进行加热和加压，从而接合。

Description

接合方法
技术领域
本发明涉及用于在较低温度下接合一对接合构件的方法，具体涉及用于在低温下进行芯片向基板的芯片键合、倒装式接合的方法。
背景技术
采用钎料的钎焊法作为各种构件的接合方法被广泛使用。尤其，为了将在高频·光模块等中所使用的半导体芯片键合到基板上，为防止部件的污染而使用无焊剂的钎料，作为这样的钎料，一般使用AuSn类钎料(例如，专利文献1)。
专利文献1：日本专利特开2004-006521号公报
通常，使用钎料的钎焊法中，将钎料熔接于一方的接合构件(例如，半导体芯片)后，将其置于另一方的接合构件(例如，基板)上，加热至钎料的熔点以上的温度，使钎料熔融并凝固。考虑到使用的钎料的熔点(AuSn类钎料的熔点为约280℃)，该接合时的温度大多设定为300℃以上的温度。
发明的揭示
然而，如果接合温度采用高温，则接合后可能在冷却至常温时产生的热应力会变大，对该接合构件造成影响。例如，半导体芯片的芯片键合中，由于热应力可能会发生半导体芯片的电气特性的变化。因此，根据接合构件，需要为了热应力的降低而接合温度尽可能低的方法。本发明是在如上所述的背景下完成的，其目的在于提供在较低温度下具有足够的接合强度的接合方法，具体提供在300℃以下的温度下也可以接合的方法。
为了解决上述课题，本发明人进行了替代以往的钎料的接合方法的研究。并且，根据研究，发现了使用具有规定的构成的金属糊料的接合方法。
即，本发明是接合一对接合构件的方法，其特征在于，包括下述工序：
(a)在一方的接合构件上涂布由纯度在99.9重量％以上、平均粒径为0.005μm～1.0μm的选自金粉、银粉、铂粉或钯粉的一种以上的金属粉末和有机溶剂形成的金属糊料的工序；
(b)将前述金属糊料干燥，在80～300℃的温度下使其烧结，制成金属粉末烧结体的工序；
(c)隔着前述金属粉末烧结体配置前述一方的接合构件和另一方的接合构件，至少加热金属粉末烧结体的同时，自单向或双向加压而接合的工序。
本发明的接合方法是使用金属糊料代替钎料的接合方法。该方法中，加热涂布于接合构件的金属糊料的同时加压，由此使糊料中的金属粉末塑性变形的同时结合，形成致密的接合部，从而进行接合。并且，为了使接合工序中的金属粉末的结合容易地进行，在加压前将糊料烧结而制成金属粉末烧结体。以下，对本发明的方法进行更详细的说明。
作为本发明中使用的金属糊料，使用在纯度在99.9重量％以上、平均粒径为0.005μm～1.0μm的选自金粉、银粉、铂粉或钯粉的一种以上的金属粉末中混合有机溶剂而得的金属糊料。对于金属粉末的纯度要求99.9重量％以上的高纯度的原因是，如果纯度低，则粉末的硬度上升，变得难以塑性变形。此外，对于金属粉末的平均粒径的要求的理由是，超过1.0μm的粒径的金属粉末在后述的烧结中不易表现出理想的邻接状态。另一方面，将0.005μm设为下限是考虑到，不到该粒径的情况下，制成糊料时容易凝集，处理变得困难。另外，由金、银、铂或钯中的任一种的粉末形成的原因是，用于芯片键合等半导体芯片的接合的情况下，对金属糊料也要求导电性，而这些金属的导电性良好。
作为构成金属糊料的有机溶剂，较好是酯醇、萜品醇、松油、二甘醇一丁醚乙酸酯、二甘醇一丁醚、二甘醇一乙醚。例如，作为优选的酯醇类的有机溶剂，可以例举2，2，4-三甲基-3-羟基戊基异丁酸酯(2，2，4-トリメチル-3-ヒドロキシペンタィソブチレ一ト)(C12H24O3)。优选这些溶剂的原因是，可以在较低温度下使其干燥。
另外，金属糊料可以含有选自丙烯酸类树脂、纤维素类树脂、醇酸树脂的一种以上。如果再加入这些树脂，金属糊料中的金属粉末的凝集得到防止，变得更均质。另外，丙烯酸类树脂可以例举甲基丙烯酸甲酯聚合物，纤维素类树脂可以例举乙基纤维素，醇酸树脂可以例举苯二酸酐树脂。另外，其中特别好是乙基纤维素。
作为将金属糊料涂布于接合构件的方法，可以根据接合部的大小使用旋涂法、丝网印刷法、喷墨法、滴下糊料后用压勺等展开的方法等各种方法。
使涂布了的金属糊料干燥是为了除去糊料中的有机溶剂。该干燥较好是在-20℃～5℃的温度下进行。干燥工序中的气氛可以采用减压气氛。由此，可以在干燥过程中防止大气中的水分在金属粉末表面结露。采用减压气氛的情况下，较好是设在100Pa以下，更好是10Pa以下，该气氛的真空度根据金属糊料中的有机溶剂的挥发性设定。
本发明中，将金属糊料涂布并干燥后，需要进行烧结。由此，糊料中的金属粒子之间和接合构件的接合面(糊料涂布面)与金属粒子之间形成相互点接触的邻接状态，金属糊料成为金属粉末烧结体。通过在后述的接合中被加热·加压，该金属粉末烧结体在接触部产生塑性变形的同时，在该变形界面产生金属原子间的结合，烧结体形成致密的接合部。这时，如果不进行烧结，即使对糊料加压，粒子间隙扩大，无法产生粒子之间的结合，也无法接合。
该烧结的温度设为80～300℃。其原因是：不足80℃时，不会产生如上所述的点接触；另一方面，如果在超过300℃的温度下进行烧结，则烧结过度进行，金属粉末间发生颈缩现象，牢固地结合，然后即使加压也不会形成致密的接合部，而且加压时容易残留变形。此外，其原因还在于，本发明原本就是从保护接合构件的角度以300℃以下的接合为目标。另外，烧结时的加热时间设为30～120分钟。其原因是：短时间内烧结炉的温度不稳定，无法充分烧结，而且如果采用过长的时间，生产性受损。此外，该烧结较好是在不负荷压力的状态下进行。
进行上述烧结后的采用加压的接合中，将涂布了金属糊料的接合构件和另一方的接合构件重叠，进行加压。为了实现接合部的致密化，加压的压力较好是比金属粉末烧结体的屈服强度大。此外，该加压可以自任一方的接合构件单向进行，也可以自双向进行。
另外，该接合工序中，需要在加热金属粉末烧结体的同时进行加压。其原因是，不加热的情况下，接合部的致密化变得不充分，接合强度不足。这时的加热温度较好是设为80～300℃。其原因是：不足80℃时，无法接合；如果超过300℃，则冷却时的热变形的影响变大。
此外，接合工序中，较好是除加热外施加超声波。通过加热或加热与超声波的组合，可以促进金属粉末的塑性变形和结合，形成更牢固的接合部。施加超声波的情况下，其条件较好是振幅设为0.5～5μm，施加时间设为0.5～3秒。其原因是，过大的超声波施加使接合构件损伤。
接合工序中的上述加热和超声波施加根据其目的至少对金属粉末烧结体进行即可，但也可以对接合构件整体进行。作为加热的方法，简便的方法是利用来自对接合构件加压时的工具的热传导。同样地，超声波的施加的简便方法是从对接合构件加压的工具激发超声波。
附图的简单说明
图1为本实施方式中的接合工序的概要说明图。
图2为烧结后的金属粉末烧结体和接合后的接合部的组织观察结果。
图3为表示在400℃进行烧结后的金属粉末烧结体的组织的图。
图4为表示接合强度的试验方法的图。
实施发明的最佳方式
以下，对本发明的优选实施方式进行说明。图1为概要地表示以本实施方式进行的半导体芯片(GaAs芯片)向基板的接合工序的图。以下，参照附图对各实施例中的接合工序进行说明。
实施例1：首先，在半导体芯片10上涂布金属糊料20。半导体芯片10在其表面预先镀有Ti(0.5μm)、Ni(1μm)、Au(1μm)、Pd(1μm)。使用的金属糊料通过将以湿式还原法制成的纯度99.99重量％的金粉(平均粒径：0.3μm)和作为有机溶剂的酯醇(2，2，4-三甲基-3-羟基戊基异丁酸酯(C12H24O3))混合而调制成。金属糊料以0.0034mm2的面积在芯片上涂布100处。
涂布金属糊料20后，将其用干燥器在-10℃真空干燥。接着，将芯片用电炉在230℃加热30分钟，将金属糊料烧结，制成粉末金属烧结体21。
烧结处理后，将Ni板30(预先镀有Au(1μm)、Pd(1μm)的基板)置于半导体芯片10上，进行加热和加压，从而接合。这时的加压条件设为每一个烧结体0.2N。此外，加热通过自工具的热传导使其达到230℃。该接合工序中的加热和加压时间设为10分钟。
实施例2：在这里，在烧结体的加压·加热的同时施加超声波，进行接合。与实施例1同样地操作，将金属糊料于半导体芯片上涂布并干燥，进行烧结后，在其上放置Ni板，与实施例1同样地进行过热·加压(加压的压力设为每一个烧结体0.33N)。超声波通过工具施加，振幅3.2μm，输出功率3.5W，施加时间设为1秒。
以上的各实施例中，对于进行烧结后的金属粉末烧结体和接合后的接合部的组织的观察结果示于图2。由图可知，通过烧结，金属粉末以接近点接触的状态邻接。并且，通过其后的加压和加热，显示出致密的组织。特别是通过施加超声波，内部显示出微细的结晶组织。另外，作为本实施方式的预备试验，在400℃进行烧结后的金属粉末烧结体的组织示于图3，通过将烧结温度设为400℃，产生金属粒子的结合。并且，在该状态下进行加压后，结果无法接合。即，需要适当进行接合前的烧结。
以下，对各实施例中进行的接合进行接合强度的研究。该研究中，如图4所示，从横向以恒定速度使推板与芯片相接并行进，测定产生破裂(芯片的剥离)时的应力，根据该值和破裂后的接合部面积算出单位面积的强度。其结果示于表1。
[表1]
 每1接合部的破裂应力(平均值)   接合强度(平均值)
  实施例1(加压+加热) 0.38N 104MPa
  实施例2(加压+加热+超声波)   0.67N   126MPa
由表1可知，各实施例的接合强度都超过100MPa。如果考虑电子部件的接合等，则可以说是足够的接合强度。此外，确认接合强度由于接合时并用超声波施加而提高。
产业上利用的可能性
如上所述，如果采用本发明，则可以在较低的温度下接合各种接合构件，可以保护接合构件不受接合后的冷却过程中的热应力的破坏。本发明在将可能受到热应力的影响的半导体芯片等接合于基板时是有用的，可以用于它的芯片键合、倒装式接合等。另外，用于倒装式接合时，可以将本发明用于半导体芯片的凸点形成。

Claims (3)

1.接合一对接合构件的方法，其特征在于，包括下述工序：
(a)在一方的接合构件上涂布由纯度在99.9重量％以上、平均粒径为0.005μm～1.0μm的选自金粉、银粉、铂粉或钯粉的一种以上的金属粉末和有机溶剂形成的金属糊料的工序；
(b)将前述金属糊料干燥，在80～300℃的温度下使其烧结，制成金属粉末烧结体的工序；
(c)隔着前述金属粉末烧结体配置前述一方的接合构件和另一方的接合构件，至少加热金属粉末烧结体的同时，自单向或双向加压而接合的工序。
2.如权利要求1所述的接合方法，其特征在于，将(c)工序中的加热温度设为80～300℃。
3.如权利要求1或2所述的接合方法，其特征在于，(c)工序中，再至少对金属粉末烧结体施加超声波进行加压。
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