CN102281973A - 烧结材料、烧结结合体以及制造烧结结合体的方法 - Google Patents
烧结材料、烧结结合体以及制造烧结结合体的方法 Download PDFInfo
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- CN102281973A CN102281973A CN201080004470.5A CN201080004470A CN102281973A CN 102281973 A CN102281973 A CN 102281973A CN 201080004470 A CN201080004470 A CN 201080004470A CN 102281973 A CN102281973 A CN 102281973A
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- B22F1/05—Metallic powder characterised by the size or surface area of the particles
- B22F1/052—Metallic powder characterised by the size or surface area of the particles characterised by a mixture of particles of different sizes or by the particle size distribution
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- B22F1/00—Metallic powder; Treatment of metallic powder, e.g. to facilitate working or to improve properties
- B22F1/10—Metallic powder containing lubricating or binding agents; Metallic powder containing organic material
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Abstract
本发明涉及一种烧结材料,其具有金属的、设置了有机涂层的结构颗粒。按本发明规定,设置了非有机涂敷的、金属的和/或陶瓷的、在烧结过程中不会放出气体的辅助颗粒(7)。此外,本发明还涉及一种烧结结合体(1)以及一种制造烧结结合体(1)的方法。
Description
技术领域
本发明涉及一种按权利要求1前序部分所述的、用来使两个接合件彼此烧结的烧结材料,还涉及一种按权利要求9前序部分所述的烧结结合体,还涉及一种按权利要求12前序部分所述的、用来制造烧结结合体的方法。
背景技术
为了使电子零件与其它的接合件连接在一起,现有技术目前是无铅的钎焊连接。同样,对于功率损耗较大的应用情况来说,并且在环境温度较高的情况下,使用银烧结技术是已知的,例如在DE 43 15 272 A1中已知的一样。通过使用高熔点的金属或金属合金(形式为固体颗粒),在烧结接合过程中绕开液体阶段。因此,可制出耐高温的烧结结合体,此烧结结合体确保了导电接触及热接触,并同时避免很高的接合温度,此接合温度是用来熔化所用的银烧结膏。
因为已知的银烧结法是借助很高的工艺压力来工作的,所以要努力降低此工艺压力。对此的解决方案是,使用非常小的结构颗粒,以便使用由此升高的表面能,作为烧结的驱动力。甚至使用纳米级的结构颗粒。除了金属的、似蜡涂敷的结构颗粒以外,已知的烧结膏通常还包含有机溶剂,以便确保烧结膏的糊状特性。可任意选择的是,通常还额外存在着其它的化学结合剂或有机的填充材料。
使用越来越小的金属结构颗粒的结果是,有机成份在烧结膏中的比越来越高,而金属含量会下降。因为有机成份在接合过程(烧结过程)中必须去除,以便烧结单个结构颗粒,所以必须蒸发或燃烧越来越高的有机成份。其结果是,待从烧结层中去除的气体量非常大,这会在接合层(烧结层)中形成细孔。只要形成均匀的分布,这些细孔到一定的比例都是有利的。在有机成份较高的情况下,首先在烧结层的中间部位形成较大的气泡,此汽泡留在烧结层中。因为除了导电和机械接触以外,烧结层还必须通过导热性确保冷却,尤其在当功率半导体借助烧结层与另一接合件相连时,这些气泡是不利的,它们在极端情况下甚至可能达到涂层厚度的尺寸。
例如在EP 0 330 895 B1中描述的烧结方法中必须使用很高的工艺压力,此工艺压力可单轴向或等压地施加。在这种昂贵的、等压的方法中,接合位置例如借助硅酮材料必须在施压过程中包封,以避免烧结膏从侧面挤压出来。在单轴向施压时,应限制接合力,因为没有包封的烧结膏可能会被挤压出来。烧结膏的加工性能和涂敷的(尤其挤压的)烧结膏的形状保持性是直接矛盾的。通过较高的有机成份,可确保烧结膏的粘性,并因此确保可安放性,尤其确保可压入性。同时,此粘稠的性能对于必要的接合压力来说是不利的,因为烧结膏在开始阶段还可移动。
发明内容
因此本发明的目的是,说明一种烧结材料,借助它可在烧结过程中减少气体的形成。烧结材料优选应这样构成,即在接合件施压时至少在很大程度上避免烧结材料从侧面挤压出来。此外,目的还在于,说明的一种最佳的烧结结合体,其中烧结层中不存在过大的气泡。尤其优选的是,即使在工艺压力很高的情况下,也不必规定烧结材料的包封,就可以把烧结结合体制造出来。此外,目的还在于,说明一种制造烧结结合体的方法,其中通过此方法应该在烧结过程中在烧结层中避免极端的气体形成。此方法优选应允许至少两个接合件借助烧结材料烧结在一起,而不必在施压之前包封烧结膏。
此目的在烧结材料方面借助权利要求1的特征得以实现,在烧结结合体方面借助权利要求9的特征得以实现,并在方法方面借助权利要求12的特征得以实现。在从属权利要求中说明了本发明的有利的改进方案。由在说明书、权利要求和/或附图中公开的至少两个特征所构成的所有组合都落入在本发明的框架中。为了避免重复,在方法方面公开的特征同样适用于装置方面,并且可以主张权利。同样,在装置方面公开的特征也适用于方法方面,并且可以主张权利。
在有利的烧结材料的构造方面,本发明是基于这样的理念,即除了金属的、设置了有机涂层的结构颗粒(尤其是铜、银和/或金颗粒)以外,还设置有辅助颗粒,其中辅助颗粒是指金属和/或陶瓷的颗粒,它不是有机地涂敷(与结构颗粒相反),以便在烧结过程中避免产生气体。按照使用目的,辅助颗粒例如可作为种类单纯的粉末、颗粒或作为粉末-颗粒-混合物来应用。通过把上述辅助颗粒集成在烧结材料中,减少了烧结材料的有机成份,因此可有针对性地控制期望的细孔尺寸。在随后还将阐述、按本发明的理念构成的烧结结合体中,还可通过以下方式达到类似的效果,即辅助颗粒设置在至少两个接合件之间的接合位置中,其中辅助颗粒在这种情况下不是强制性地必须事先加在烧结材料中,也可以直接加入/放置在接合位置或至少一个接合件上。用于烧结材料的辅助颗粒不必是纯的,它也可是指由金属和陶瓷颗粒构成的混合物,或指由不同金属和/或陶瓷颗粒构成的混合物。如上所述,通过设置辅助颗粒,来降低有机成份在烧结材料中的比例,因此只需从膏状体积去除更少量的气体。这会使细孔比例更低,或降低大体积的细孔,并因此更好地使待制造的烧结结合体散热。此外,通过辅助颗粒可改变烧结材料的热膨胀系数,这在接合件和烧结材料的结合体的耐温度变化性能方面是有利的。尤其优选的是,通过使用陶瓷的辅助颗粒,降低了热膨胀性能,因为烧结层(连接层)以这种方式与待接合的半导体元件的膨胀系数相匹配。此外,通过把按前述构成的辅助颗粒设置在烧结材料中和/或直接设置在接合件中的至少一个上,可有针对性地调节烧结间隙。为此使用目的,辅助颗粒的粒度优选超出结构颗粒的粒位多倍。通过粒度的选择和辅助颗粒的比例,可在接合件之间预先规定最小的间隔。因此,尽管有必要的接合压力,仍可确保接合件之间的最小间隙宽度,因为一层或多层辅助颗粒可避免接合件的进一步压合。因此,可尤其使压出的结构具有更高形状稳定性。因此,可控制或将具有辅助颗粒的烧结材料的挤出降至最低。在最不利的情况下,烧结材料的压出可能会导致短路。
烧结材料优选指烧结膏,尤其优选指银烧结膏,其中还优选的是,烧结膏包含有机的溶剂,用来确保糊状特性。按备选的实施例,烧结材料还可指粉末混合物。同样还可实现这样的实施例,即烧结材料构成烧结材料预成形件(预成形),即已经构成为成形体。
在与电元件必须建立导电连接的产品中,优选使用按本发明的理念构成的烧结材料。迄今使用的钎焊连接尤其可由烧结结合体代替,此烧结结合体是借助按本发明理念构成的烧结材料制成的。借助烧结材料制成的烧结结合体可在高温下应用,和/或应用在功率损耗高的构件中。通过按本发明构成的烧结材料,可克服迄今出现的使用寿命限制。这一点尤其在辅助颗粒构成为定距件的情况下实现,因为尽管工艺压力很高,但可保持确定的间隙尺寸。应用领域的例子是:电子助力转向装置的功率末级、通用逆变单元的功率末级、尤其在起动机和/或发电机上的电子控制装置、发电机铭牌(Generatorschilder)上的压装二极管、高温稳定的半导体(如碳化硅)、亦或传感器,它们在高温下工作并需要靠近传感器的电子分析装置。在半导体二极管中应用也是可能的。烧结材料也可应用在用于逆变器的模块中,尤其应用在光电伏打设备中。
因为由于辅助颗粒可以设定少量的细孔含量,并且可实现适当的热膨胀系数,所以获得的烧结结合体可实现更高的应用温度。
由于细孔降至最低,也可提高接合面,它目前被排气问题限制。因此,可达到最佳的热传递性能。
在本发明的改进方案中,所用的辅助颗粒的特征在于,它的熔解温度大于烧结过程温度,以便在烧结过程中避免辅助颗粒的熔化。尤其优选的是,辅助颗粒的熔解温度大于所用的结构颗粒的温度。在烧结过程中所用的温度尤其优选在300℃以下,优选在250℃以下,尤其优选在100℃以下。在技术方面值得期望的是,所用的工艺压力是零,但这几乎是不可能实现的。工艺压力优选最大为40Mpa,优选小于15Mpa,更优选小于10Mpa,或小于6Mpa,或小于3Mpa, 或小于1Mpa,或小于0.5Mpa。
尤其适宜的是,辅助颗粒这样构成,即它在烧结过程中与结构颗粒烧结。为此,辅助颗粒例如具有可烧结的表面,它例如借助合适的涂层来实现。还可这样来选择辅助颗粒,即其向内扩散到结构颗粒中。
尤其优选的是,辅助颗粒是指陶瓷的和/或金属的颗粒。在设置辅助颗粒的情况下,有利的是,将它们涂敷,尤其金属地涂敷,优选用金属和/或用贵金属或用镍,尤其优选地用含磷成份的镍。在把金属颗粒当作辅助颗粒来用时,它们可由与结构颗粒相同的材料构成(但无有机涂层)。这虽然不会改变热膨胀性能,但会减少烧结过程中产生的气体量,这会使烧结层更密实。
在结构颗粒的结构方面,同样具有不同的可能性。尤其优选的实施例是,结构颗粒是指银颗粒。附加地或备选地,结构颗粒可构成为铜颗粒、金颗粒或钯颗粒。还可能的是,把由上述颗粒构成的混合物当作结构颗粒来用。附加地或备选地,结构颗粒可由合金构成,其优选具有上述金属中的至少一个。
在把陶瓷颗粒当作辅助颗粒来用的情况下,应该确保辅助颗粒的导热性能。因此,如氧化铝(也可掺杂)、氮化铝、氧化铍、氮化硅等材料在此是尤其适合的。为了不使陶瓷辅助颗粒的导电性能变差,也可使用导电的陶瓷,例如碳化硼或碳化硅。
在此尤其优选的实施例是,辅助颗粒构成为具有确定几何形状的成形体。因此例如可能的是,辅助颗粒具有球形、方形、圆柱形等造型。例如可由板材冲制成辅助颗粒,来实现这一点,其中在这种情况下尤其优选的是,板材或成形体设置涂层,此涂层可使辅助颗粒和结构颗粒烧结在一起,但涂层绝对不能是有机性质,从而不会额外在烧结过程中产生气体。还可能的是,把造型不规则的辅助颗粒当作定距件来用。尤其优选的是,辅助颗粒具有比结构颗粒大得多的、尤其大数倍的粒度。完全尤其优选的是,辅助颗粒的大小这样进行选择,即其同时接触两个彼此待接合在一起的接合件,并因此直接确定间隙宽度。
本发明还涉及一种烧结结合体,其包含至少两个接合件,它们在接合区域内彼此烧结在一起。此烧结结合体的特征在于,如同在针对烧结材料的以上描述和权利要求一样,在接合区域内设置辅助颗粒,借助此辅助颗粒一方面可避免由于有机成份的减少而产生过量的气体,此辅助颗粒在相应的粒度时承担起定距件的功能,用来调节接合间隙。
在辅助颗粒构成为定距件的情况下,优选的是,辅助颗粒具有比结构颗粒大的、优选大数倍的粒度。在尤其优选的实施例中,辅助颗粒同时接触两个接合件。
在至少两个彼此烧结在一起的接合件的结构方面,具有不同的可能性。因此,接合件中的至少一个例如构成为电子元件,尤其构成为半导体元件,优选构成为功率半导体元件。在此尤其优选的是,这些零件具有硅、碳化硅、氮化硅、磷化镓、砷化镓。此外还优选的是,这种零件借助烧结层与电子电路载体相连。还可能的是,尤其已装配的电路载体和底板和/或外壳借助烧结层进行烧结。元件(尤其是电子元件)还可与两个优选彼此相背离的烧结层像三明治一样地装在两个接合件之间,它们可确保元件朝上和/或朝下的导电接触。在接合件中的一个构成为底板的情况下,优选的是,它构成为所谓的DCB-基底或AMB-基底或IMS-基底或PCB-基底或LTCC-基底或标准陶瓷基底。
此外,本发明还涉及一种用来制造烧结结合体的方法。此烧结结合体具有至少两个在烧结过程中在使用烧结材料的情况下彼此烧结在一起的接合件。此理念的核心是,在接合区域中设置辅助颗粒,此辅助颗粒构造得如同在上述说明和权利要求书中描述的一样,其中可能的是,使用设置有这种辅助颗粒的烧结材料,和/或辅助颗粒构成为这样的烧结材料,即它要么在接合区域中设置在接合件的至少一个上,和/或设置、尤其挤压在它上面。设置辅助颗粒的目的是,通过减少有机成份来避免过量的气泡形成。按辅助颗粒的粒度,还可通过它们来调节接合件之间的间隔,即间隙尺寸。
附图说明
从优选实施例的以下描述中,并借助附图得出了本发明的其它优点、特征和细节。
其中:
图1 示出了烧结结合体的可行实施例,其具有两个接合件;
图2 示出了烧结结合体的备选实施例,其具有总共三个接合件和两个烧结层;
图3 示出了备选的烧结结合体,其中设置有球形的辅助颗粒作为定距件;
图4 示出了另一备选的烧结结合体,其中球状的、起定距件作用的烧结颗粒是配有非有机涂层的颗粒;
图5 示出了烧结结合体的另一备选的实施例,其中起定距件作用的辅助颗粒构成为方形的;
图6 示出了烧结结合体的另一备选的实施例,其中辅助颗粒构成为粗晶粒的粉末;以及
图7 示出了具有球形辅助颗粒的烧结结合体,这些辅助颗粒将两个烧结层彼此相连。
具体实施方式
在附图中,相同的元件以及具有相同功能的元件用相同的参考标记来表示。
在图1中示出了烧结结合体1。它具有在附图平面中位于上方的第一接合件2,还具有位于其下方的第二接合件3。这两个接合件2、3通过由未示出了的烧结材料制成的烧结层4彼此相连。此烧结材料在烧结过程之前除了金属的结构颗粒以外还包含辅助颗粒,由烧结材料产生的烧结层4在烧结过程之后除了金属的结构颗粒以外还包含辅助颗粒,所述辅助颗粒是非有机地涂覆。所用的烧结材料还可备选地指烧结膏、粉末混合物或烧结成形件(Sinterformteil)。此辅助颗粒用来减少有机成份,并因此用来在烧结件的烧结过程中减少气体的形成。此辅助颗粒的特征基本在于,它相对于烧结过程是惰性的,也就是说,至少几乎无变化地经受烧结过程。第一接合件2例如指电子元件,例如功率半导体,第二接合件3例如指电路载体。还可能的是,第一接合件2指已装配的电路载体,而第二接合件3是指底板(散热装置)。
图2示出了备选的烧结结合体1。除了开始两个、此处是设置在外面的接合件2、3以外,还具有第三接合件5,它在所示的实施例中例如指电子元件。第一和第二接合件2、3优选分别构成为电路载体或底板或外壳等。在第一接合件2和第三接合件5之间,以及在第三接合件5和第二接合件3之间分别具有烧结层4、6,它们分别已由烧结材料制成。此烧结材料包含金属的或陶瓷的、非有机涂敷的辅助颗粒,它们在烧结过程中在使用压力和温度的情况下不会析出气体。
在图3至6中示出了烧结结合体1的其它实施例,其分别包含两个通过烧结彼此接合的接合件2、3。位于接合件2、3之间的烧结层4分别由烧结材料(例如烧结膏、粉末混合物或烧结成形件)制成,还包含金属的或陶瓷的、非有机涂敷的、在烧结过程中不会析出气体的辅助颗粒7。在按图3至6的实施例中,辅助颗粒7当作定距件来用,用来调节烧结间隙的间隙尺寸或烧结层4的层厚度。在所有按图3至6的实施例中,示意示出的辅助颗粒7具有比烧结层4的结构颗粒大得多的粒度,此结构颗粒为了视觉清晰没有示出。此辅助颗粒7的特征基本在于,它们相对于烧结过程是惰性的,也就是说,至少几乎无变化地经受烧结过程。
在按图3的实施例中,辅助颗粒7具有球状造型,与按图4的实施例一样,但区别在于,辅助颗粒7在按图4的实施例中被涂敷。它优选指金属的涂敷的陶瓷颗粒。
在按图5的实施例中设置了方形或圆柱形成型的辅助颗粒7,在按图6的实施例中设置了粗晶粒的粉末,其中单个辅助颗粒7不规则地成型。
图3至5所示的辅助颗粒7也例如可指成型体(Formk?rper),它还例如由板材冲制而成。此成型体优选设置有涂层(表面抛光),例如在图4中所示的一样,用来使烧结材料或烧结层的结构颗粒形成固定的连接。
在图7中示出了烧结结合体1的另一实施例。可看到,两个通过烧结彼此固定相连的接合件2、3,其中在每个接合件2、3的一个侧面上分别设置有烧结层4、6,其中烧结层4、6在所示的实施例中不是直接接触的,而是通过尺寸相对较大的辅助颗粒7彼此相连,其中辅助颗粒7烧结到烧结层4、6的结构颗粒上。
Claims (12)
1.一种烧结材料,其具有金属的、设置了有机涂层的结构颗粒,其特征在于,设置了非有机涂敷的、金属的和/或陶瓷的、在烧结过程中不会放出气体的辅助颗粒(7)。
2.按权利要求1所述的烧结材料,其特征在于,烧结材料构成为优选包含至少一种有机溶剂的烧结膏,或构成为粉末混合物,或构成为烧结材料预成形件。
3.按权利要求1或2所述的烧结材料,其特征在于,辅助颗粒(7)的熔解温度和/或分解温度大于烧结工艺温度,优选大于结构颗粒的熔化温度或分解温度。
4.按上述权利要求之任一项所述的烧结材料,其特征在于,辅助颗粒(7)是这样构成的,即其在烧结过程中与结构颗粒烧结,尤其通过设置可烧结的表面或涂层,和/或通过向内扩散。
5.按上述权利要求之任一项所述的烧结材料,其特征在于,辅助颗粒(7)被金属地和/或陶瓷地、尤其借助结构颗粒的金属或贵金属或镍、优选借助磷成份进行涂敷。
6.按上述权利要求之任一项所述的烧结材料,其特征在于,结构颗粒构成为银颗粒、铜颗粒、金颗粒、铂颗粒或钯颗粒或上述颗粒的混合物,和/或构成为具有上述金属中的至少一个的合金。
7.按上述权利要求之任一项所述的烧结材料,其特征在于,辅助颗粒(7)构成为钨颗粒、金颗粒、银颗粒、氧化铝颗粒、氮化铝颗粒、氧化铍颗粒、氮化硅颗粒、碳化硼颗粒或碳化硅颗粒或上述颗粒的混合物。
8.按上述权利要求之任一项所述的烧结材料,其特征在于,辅助颗粒(7)具有比结构颗粒大的、尤其大数倍的粒度,此辅助颗粒尤其具有球形、方形、圆柱形或不规则的造型,优选构造成成型体。
9.一种烧结结合体,其具有第一接合件(2)和至少一个第二接合件(3),它们在接合区域内烧结在一起,其特征在于,在接合区域内设置金属的和/或陶瓷的辅助颗粒(7),此辅助颗粒(7)在制造烧结结合体(1)的烧结过程中不会放出气体,并且在烧结过程之前和之后非有机地涂敷。
10.按权利要求9所述的烧结结合体,其特征在于,辅助颗粒(7)的粒度比结构颗粒的粒度大,优选大数倍,优选大这样的程度,即辅助颗粒(7)的至少一部分、优选超过颗粒的一半,接触两个接合件(2、3)。
11.按权利要求8至10之任一项所述的烧结结合体,其特征在于,第一和/或第二、优选被涂敷的、尤其用镍-磷、银和/或金涂敷的接合件(2、3)构成为优选由硅、碳化硅、氮化镓、磷化镓铟或砷化镓构成的电子元件,或构成为电的、尤其已装配的电路载体,或构成为壳体,或尤其构成为DCB-基底、AMB-基底、IMS-基底、PCB-基底、LTCC-基底、标准陶瓷基底,或构成为底板。
12.一种用来制造优选按权利要求9至11之任一项所述烧结结合体(1)的方法,在此方法中第一和至少一个第二接合件(2、3)在烧结过程中在压力和温度作用下在使用烧结材料的情况下彼此烧结在一起,其特征在于,使用按权利要求1至8之任一项所述的烧结材料,和/或在接合区域中在接合件(2、3、5)中的至少一个上,优选在放置烧结材料之前,设置非有机涂敷的、金属的和/或陶瓷的、在烧结过程中不会放出气体的辅助颗粒(7)。
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