CN105405813B - 电子构件 - Google Patents

电子构件 Download PDF

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CN105405813B
CN105405813B CN201510566464.3A CN201510566464A CN105405813B CN 105405813 B CN105405813 B CN 105405813B CN 201510566464 A CN201510566464 A CN 201510566464A CN 105405813 B CN105405813 B CN 105405813B
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layer
semiconductor element
dielectric layer
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A·格拉赫
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Robert Bosch GmbH
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Abstract

本发明涉及一种电子构件，其中板状半导体元件(3)通过烧结层(5)与金属接触部(6)连接，其中在所述半导体元件(3)的边缘区域中设有介电层(13)以及设置在其上的表面金属层(11)，所述边缘区域通过所述介电层(13)的和/或所述表面金属层(11)的结构化部(50，21，22，31，32)配备有突起部和凹部，并且所述烧结层(5)覆盖具有所述突起部和凹部的边缘区域并且因此将所述边缘区域与所述金属接触部(6)连接。

Description

电子构件
技术领域
本发明从一种电子构件出发。
背景技术
由DE 10 2010 063 021 A1已经公知一些电子构件，其中板状半导体元件通过烧结层与金属板连接。在此，使用烧结层的预结构化，以便降低板状半导体元件与金属板之间的机械应力。除了烧结层的预结构化，这要求在装配时烧结层相对于金属板和板状半导体元件的精确调准(Justierung)。
发明内容
根据本发明提供一种电子构件，其中，板状半导体元件通过烧结层与金属接触部连接，其特征在于，在所述半导体元件的边缘区域中设有介电层以及设置在其上的表面金属层，所述边缘区域通过所述介电层的和/或所述表面金属层的结构化部配备有突起部和凹部，并且所述烧结层(5)覆盖具有所述突起部和凹部的边缘区域并且因此将所述边缘区域与所述金属接触部连接。
根据本发明的电子构件与此相比具有以下优点：不需要烧结层的结构化来减小板状半导体元件和与半导体元件通过烧结层连接的金属板之间的机械应力。为此，根据本发明设置总归设置在半导体元件上的介电层的和/ 或总归设置的表面金属层的结构化。所述结构化优选在半导体元件的边缘区域中实现，因为在那里机械应力是特别成问题的。
其他优点和改进通过下述说明书得出。通过结构化部的锯齿形构造有效地增大烧结层与半导体元件之间的接触面并且因此明显减小机械应力。锯齿在此可以是矩形地、三角形地或邮票边缘状地构造的。作为其他替代方案，结构化部可以通过岛区域实现。作为介电层优选使用硅氧化物、硅氮化物或耐温度的塑料，如聚酰亚胺。表面金属层不仅遮盖边缘区域而且也建立半导体元件与烧结层的电接触。所述烧结层优选由金属微粒、尤其银微粒构成。如此与半导体元件连接的金属板因此构成半导体元件的接触部。作为用于金属板的材料尤其优选涂以薄的贵金属层的铜。电子构件优选作为整流器结构用在发电机中。
附图说明
在附图中示出并且在下面的描述中详细阐述本发明的实施例。附图示出：
图1：根据本发明的电子构件的概览性侧视图或者概览式剖示图；
图2：根据本发明的电子构件的详细剖视图；
图3：半导体元件的第一俯视图；
图4：半导体元件的另一俯视图；
图5：图4的横截面；
图6：半导体元件的俯视图；
图7：半导体元件的另一俯视图；
图8：图7的横截面；
图9a、9b、10a、10b：半导体元件的其他俯视图；
图11：电子构件的详细横截面。
具体实施方式
在图1中在轴线100的左侧示出用于发电机的二极管的、尤其用于机动车中的发电机的二极管的横截面并且在轴线100的右侧示出其外部视图。所述二极管具有压入基座1，所述压入基座在其外侧上设有所谓的滚花、也即沟槽。借助所述滚花将压入基座1压入到金属整流器装置的相应开口中。在此通过滚花的沟槽实现压入基座1与整流器装置的特别紧密的形状锁合连接，由此保证非常好的电接触和非常好的散热。如在横截面中可以看到的那样，压入基座1还具有金属接触部2，在所述金属接触部上然后装配有真正的半导体元件3。半导体元件3通过导电烧结层4与金属接触部2连接。同样，半导体元件3通过导电烧结层5与金属接触部6连接。此外，半导体元件3还可以具有薄的表面接触层11，所述表面接触层设置在半导体元件3和烧结层5和烧结层4之间。例如，由Cr、NiV7和Ag组成的层序列可以用于半导体元件3与第一烧结层5和第二烧结层4的连接。此外，金属接触部6、半导体元件3和金属接触部2的整体通过浇注材料7完全包封。浇注材料7是绝缘塑料材料，其任务是接收作用到接触部6、烧结层5、半导体元件3、烧结层4或者金属接触部2上的机械力的一部分。为有助于浇注，还设有塑料环8，所述塑料环在装配期间用作用于塑料材料7的浇注套管。例如以石英颗粒填充的环氧树脂或其他高耐热的塑料可以用作塑料材料7。作为用于第一接触部6或者第二接触部2或者压入基座1的材料，优选使用良好导电材料和良好导热材料，例如铜。为了保证烧结层的良好连接，这些铜材料设有薄的表面贵金属层，例如银层。这样的二极管元件，如其在图1中所示的那样，例如已经由DE 10 2007 063 308公知。
对于烧结层4、5，首先将由具有金属微粒的塑料组成的浆状材料施加到半导体元件3和/或金属接触部2、6上。为此适合按压或嵌入相应的薄层(Folien)。通过温度处理，然后使塑料转变到气体形状的状态中并且使金属微粒通过烧结工艺相互连接并且与半导体元件3的表面和金属接触部 2、6连接。因此在半导体元件3和金属接触部2、6之间提供电连接和机械连接。在该制造方法中可能发生失调(Fehljustage)，也即烧结材料的设置可能不相应于所期望的位置。尤其由于这样的失调，连接层可能不仅到达半导体元件3的有意的中间区域上而且到达非有意的边缘区域中。
图2示出根据本发明的电子构件的详细视图，其中尤其详细示出半导体构件3的边缘区域。半导体元件3在其下侧上具有表面金属层12，通过该表面金属层建立半导体材料的电接触。所述表面金属层12借助烧结层4 与下金属接触部2连接。半导体构件3因此可以固定地构造在下金属接触部2上，所述下金属接触部在此尤其可以构造为基座，如在图1中所示的那样。在上侧上，半导体构件3在边缘区域中具有介电层13。此外，在上侧上设有表面金属化部11，所述表面金属化部接触半导体元件3的中间区域。在介电层13和表面金属化部11上设置有烧结层5，通过所述烧结层建立与上金属接触部6的机械接触和电接触。
通常通过加工非常大的半导体板、尤其所谓的硅晶片来提供半导体元件3并且然后通过锯切所述半导体晶片将各个半导体元件3分割成各个构件。通过该锯切工艺，在边缘区域中出现晶体缺陷，所述晶体缺陷导致半导体元件的电特性的改变。因此，边缘区域对于半导体元件的真正功能是不可用的，因为通过锯切工艺引起半导体材料中的晶体损坏，这导致变差的特性。通过设置在半导体元件3的边缘区域中的介电层13的使用防止烧结层5与半导体材料的电接触。因此保证仅仅半导体元件3的未受加工步骤——锯切损坏的区域用于半导体元件的功能。
在图2中示例性地示出有效区域20，该有效区域仅仅构造在半导体元件3的中间区域中。例如该有效区域可以涉及半导体元件3中的p型掺杂，该半导体元件具有n型掺杂。因此，例如构造二极管。但替代所述pn型二极管，明显也可以设置其他功能元件，所述其他功能元件通过表面金属层 11电接触。
表面金属层11通常通过以下工艺产生：该工艺产生金属层11和半导体元件3的材料之间的接触的在质量方面可复现的特性。这样的工艺例如是金属层的溅射或汽化蒸镀。通常的金属层11使用例如铬、镍和贵金属的序列。这样的层序列建立与半导体元件3的非常好的和可复现的接触并且形成用于通过烧结材料5进行接触的最佳表面。因为介电层13设置在边缘区域中，所以不存在以下危险：烧结层5在该边缘区域中建立与半导体材料的电接触。因此保证了金属接触部6通过烧结层5的接触仅仅在以下区域中实现：在该区域中设有表面金属层11。
不仅介电层13而且表面金属层11必须被结构化，以便在其功能方面相应地构造在半导体元件3的表面上。现在根据本发明提出，利用介电层 13的和金属层11的反正需要的结构化，以便降低烧结层5的金属接触部6 和半导体元件3之间的机械应力。该做法现在根据图3、4和5示出。
在图3中示出图2的半导体元件3的在边缘区域中的俯视图。为了示出介电层13如何构造，在此在图3的视图中省略金属接触部6、烧结层5 和金属层11或者从相应的半导体元件3去除金属接触部6、烧结层5和金属层11。如在图3的俯视图中可以清晰看到，介电层13在指向内部的一侧上锯齿形地结构化。锯齿形的结构化部50在图3的俯视图中矩形地构造。但替代地，所述锯齿形的结构化部50也可以三角形地或如邮票边缘那样配备有半圆形凹部的依次排列。重要的仅仅是，虽然介电层13还完全覆盖边缘区域使得不能够发生半导体元件3的受损的边缘区域通过烧结层5的接触但从边缘区域出发继续向内具有结构化。示例性地在图3中示出矩形的、锯齿形的结构化部50。
在图4中示出根据图3的元件的相同俯视图，但包括表面金属层11。如在图4的俯视图中可以看到的那样，表面金属化部完全覆盖锯齿形的结构化部50的区域，从而在图4的俯视图中不再能够看到图3的锯齿形的结构化部50。因此，从半导体元件3的边缘出发，在附图4的俯视图中仅仅还能够看到介电层13的窄条带并且然后接着是表面金属化部11，该表面金属化部延伸到半导体元件3的其他内部区域上。
现在在图5中示出图4沿着线A-A的横截面。线A-A如此设置，使得线A-A位于介电层13的锯齿形的结构化部50的区域中。在根据图5的横截面中可以看到，在半导体元件3的上侧上，介电层具有通过锯齿形的结构化部50的各个锯齿形成的各个区域。在这些锯齿的区域中，表面金属化部11相应地匹配于这些锯齿，从而表面金属化部在一个锯齿的区域中形成一个突起部并且在两个锯齿之间直接置于半导体元件3上并且形成一个凹部。因此，沿着线A-A，金属化部11的表面形成突起部和凹部的序列，由此明显增大表面金属化部11和烧结层5之间的表面。烧结层5在烧结工艺中被压到构件3的表面或者金属化部11上并且因此紧贴到突起部或者凹部上。因此，在表面金属化部11和烧结层5之间形成增大的表面。这意味着，在各个层之间形成的机械应力分布到更大的表面上并且因此相应地对于单位面积减小。因此，通过在半导体元件3的边缘区域中表面的所述增大使机械应力减小并且使烧结层5的过载危险或构件3的材料的过载危险减小。因为总归必须进行介电层13的结构化，所以边缘区域的现在在此提出的锯齿形的结构化不需要其他开销并且因此可以简单地和成本有利地减少机械应力的出现。
在图6中示出具有介电层13的半导体元件3的俯视图，该俯视图相应于根据图3的俯视图。然而，不同于图3，介电层13的朝内部定向的区域没有如图3中那样锯齿形地构造。
现在在图7中示出相应于图4的视图，也即根据图6的半导体元件3 在施加和结构化表面金属化部11之后。然而，不同于图4，在此表面金属化部11在边缘区域中设有锯齿形的结构化部11。
在图8中示出具有介电层13和经结构化的表面金属层11的半导体元件3沿着图7的线B-B的横截面，其中还附加地示出烧结层5。在根据图8 的横截面中看到半导体元件3和施加在其上的介电层13，该介电层沿着线 B-B构造为连续的层。在介电层13的表面上可以看到锯齿形构造的金属层 11的各个锯齿。然后，在所述金属层11上接着是烧结层5，该烧结层又相应地填充金属层11的突起部和凹部。烧结层5相应地紧贴到金属层11的突起部和凹部上，由此又如已经对于图5所描述的那样在烧结层5和金属层11或者位于其下的介电层13之间形成增大的表面。因此，不同于图5 地，不仅相对于金属层的表面而且相对于金属层11的表面和在凹部中暴露的介电层13形成相对于烧结层5的增大的表面。因此，又通过增大的表面引起所出现的机械力在增大的表面上的分布并且因此避免应力峰值的出现。
在图9a、9b、10a和10b中示出具有所施加的介电层13并且具有金属层11的半导体元件3，所述介电层和金属层分别经结构化。对于所述示图未示出烧结层5。在此分别涉及本发明的其他实施方式。在此，介电层分别作为条带从左边缘延伸直至金属层11下方，其中在这些附图中通过虚线 130示出介电层13的条带以何种程度向右延伸到金属层11下方。
在图9a中以半导体元件3的俯视图示出介电层13的结构化部的其他形式。对此，介电层13在边缘区域中具有圆形的孔结构21。因此，在这些孔结构21中半导体元件3的表面暴露，由此相应地随后施加的金属层11 直接置于半导体元件3上。因此，所述孔结构21必须具有与半导体元件3 的边缘的足够间距，以便不产生半导体元件3的受锯切工艺干扰的区域的非有意的接触。替代地，也可以设置介电岛结构22，所述介电岛结构在图 9b的俯视图中构造为圆形的岛结构22。所述岛结构22也引起施加到其上的金属化部11的相应结构化，由此又相应地增大了用于与烧结层5连接的表面。
在图10a中示出在所述情形中通过金属层11的附加结构化来增大烧结层5与半导体元件3之间的面积的另一种替代方案。根据图10a的俯视图相应于根据图4和7的俯视图，也即在图10a的俯视图中，介电层13和经结构化的表面金属层11位于半导体元件3的上侧上。表面金属层11例如可以通过以下方式结构化：开设孔结构31，也即在所述孔结构31的区域中烧结层5直接延伸到位于其下方的介电层13或者半导体元件3的表面上。此外，可以如在图10b中那样设有岛结构32，也即如在此所示的那样，例如金属化层11的圆形区域，所述圆形区域设置在介电层13上。通过表面金属层11的岛结构32实现烧结层5和半导体元件3的上侧之间的连接面的结构化，由此所出现的机械力又分布到更大的面积上并且因此使机械力相对于该表面分布。
另一种用于减小机械力的可能性在图11中示出。在图11中示出详细的剖视图，该剖视图相应于根据图2的剖视图。借助附图标记2、3、4、5、 6、11、12和13又表示与在图2中相同的物体。附加地还设置进行应力减小的厚金属层41和进行应力减小的厚介电层40。进行应力减小的厚金属层 41设置在半导体元件和表面金属化部11之间并且几乎与金属化部11相似地结构化如下：该层主要设置在中间区域中并且边缘区域暴露。作为材料使用相对较软的材料，例如铝，其基于其柔软性以及基于其弹性模量而有助于减小所出现的机械应力。作为层厚度，在此可以选择1μm和5μm之间的层厚度。在边缘区域中，在介电层13上方还设有另一更厚的介电层40，其可以以0.5μm至2μm厚度的层厚度构造。作为介电层在此可以使用不同的电介质，例如硅氧化物、硅氮化物或塑料，如聚酰亚胺。在此也可以使用不同电介质的层序列。该层也有助于减小机械应力并且因此引起使在金属接触部6和半导体元件3之间由于温度变化等出现的机械应力减小。
图11的措施可以与在图3至10b中描述的其他措施相互组合。此外可以同时一起使用各个所描述的措施。例如根据图6至8的介电层的结构化可以与根据图10a、10b的金属层11的结构化组合。同样，根据图6至8 的金属层11的结构化可以与图9a、9b的孔结构或岛结构组合。此外，根据图3至5的介电层的结构化也可以与根据图6至8的金属层11的结构化附加地与根据图11的措施组合地使用。在不结合或结合根据图11的措施的情况下能够实现结构化措施相互间的任何组合。

Claims (11)

1.一种电子构件，其中，板状半导体元件(3)通过烧结层(5)与金属接触部(6)连接，其特征在于，在所述半导体元件(3)的边缘区域中设有介电层(13)以及设置在其上的表面金属层(11)，所述边缘区域通过所述介电层(13)的和/或所述表面金属层(11)的结构化部(50，21，22，31，32)配备有突起部和凹部，并且所述烧结层(5)覆盖具有所述突起部和凹部的边缘区域并且因此将所述边缘区域与所述金属接触部(6)连接。
2.根据权利要求1所述的构件，其特征在于，所述结构化部(50)锯齿形地构造。
3.根据权利要求2所述的构件，其特征在于，所述锯齿矩形地、三角形地或邮票边缘状地构造。
4.根据权利要求1所述的构件，其特征在于，所述结构化部构造为岛结构(32，22)或孔结构(21，31)。
5.根据以上权利要求中任一项所述的构件，其特征在于，所述介电层构造为硅氧化物、硅氮化物、氮氧化硅或塑料。
6.根据权利要求1至4中任一项所述的构件，其特征在于，所述介电层构造为聚酰亚胺。
7.根据权利要求1至4中任一项所述的构件，其特征在于，所述表面金属层(11)遮盖所述半导体元件(3)的表面的设有所述介电层的区域并且建立与所述半导体元件的电接触。
8.根据权利要求1至4中任一项所述的构件，其特征在于，所述烧结层(5)具有相互烧结的金属微粒。
9.根据权利要求1至4中任一项所述的构件，其特征在于，所述烧结层(5)具有相互烧结的银微粒。
10.根据权利要求1至4中任一项所述的构件，其特征在于，所述金属接触部由以贵金属涂覆的铜或由铜合金制成。
11.根据权利要求1至4中任一项所述的构件，其特征在于，设有附加的进行应力减小的金属层(41)和附加地进行应力减小的介电层，它们比所述表面金属化部(11)和所述介电层(13)更厚，其中，所述附加的进行应力减小的金属层(41)设置在所述半导体元件和所述表面金属化部(11)之间，并且所述附加地进行应力减小的介电层设置在所述介电层(13)上方。
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