JP5123633B2 - 半導体装置および接続材料 - Google Patents
半導体装置および接続材料 Download PDFInfo
- Publication number
- JP5123633B2 JP5123633B2 JP2007264412A JP2007264412A JP5123633B2 JP 5123633 B2 JP5123633 B2 JP 5123633B2 JP 2007264412 A JP2007264412 A JP 2007264412A JP 2007264412 A JP2007264412 A JP 2007264412A JP 5123633 B2 JP5123633 B2 JP 5123633B2
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- Japan
- Prior art keywords
- metal powder
- semiconductor device
- connection
- silver
- bonding layer
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Description
(a)前記導体部材あるいは前記半導体部品の接続面上に、前記ペースト状の接続材料を供給する工程と、
(b)前記ペースト状の接続材料の上に前記半導体部品あるいは前記導体部材を押圧して搭載する工程と、
(c)大気中で100℃〜350℃に加熱して前記半導体部品と前記導体部材とを接続する工程と、
を含み、
前記ペースト状の接続材料中の有機成分を除去して前記半導体部品と前記導体部材を金属結合によって接続する。
図1は、本実施の形態1の半導体装置におけるダイボンディング部断面構造の一例を示したものである。
図3は、本実施の形態2の半導体装置におけるダイボンディング部断面構造の一例を示したものである。
図4は、本実施の形態3の半導体装置におけるダイボンディング部断面構造の一例を示したものである。
図5及び図6は、それぞれ本実施の形態4の半導体装置のパッケージング構造の一例を示した断面図及び平面図である。
図7は、前記実施の形態1〜3でも説明した複合金属粉末7(図1参照)および単一金属粉末5A(図3参照)を含む、各種接続材料の評価結果を示したものである。図7において、No.1〜7はCu金属粉末の周囲にAgめっき膜を形成した複合金属粉末であり、No.8はAl金属粉末にジンケート処理を施してNiおよびAuを無電解めっき処理した複合金属粉末であり、No.9はNi金属粉末の周囲にAuめっき膜を形成した複合金属粉末であり、No.10はAgの単一金属粉末であり、No.11、12はCuの単一金属粉末である。金属粉末はいずれもアトマイズ法で作製したもので、粒子サイズはふるいにかけたメッシュサイズで表している。
図9は、本実施の形態6の半導体装置のパッケージング構造を示した断面図である。
図10は、本実施の形態7の半導体装置のパッケージング構造を示した断面図である。
図11は、本実施の形態8の半導体装置のフリップチップ実装構造の一例を示した断面図である。
図12は、本実施の形態9の半導体モジュール装置の一例を示した断面図である。
図13に本実施の形態による半導体装置の製造工程の一例を示す。図13においては、組み立て部品として、最表面がAuの裏面電極を備えたチップと、ダイボンディング部にAgめっきが施されたリードフレームを準備する。また、ダイボンディングの接続材料として有機銀化合物溶液と貴金属をコートした金属粉末と銀微粒子と、溶剤から成るペーストを充填したディスペンサーとを準備する。
2 裏面電極(第2の電極)
3 ダイパッド(導体部材、第2の導体部材)
4、4A、4B めっき膜
5 Cu金属粉末
5A 単一金属粉末
5B 金属粉末
6 Agめっき膜
7 複合金属粉末
8、11、12 接着層(結合材)
9 空孔
10、10A、10B、10C、10D、10E、10F、10G、10H 接続層(接合層)
13 有機銀化合物
14 空隙
15 主電極
15A 主面電極(第1の電極)
16 制御電極
17 裏面電極用リード
18、20 ワイヤ
19 主電極用リード(導体部材、第1の導体部材)
21 制御電極用リード
22 モールド樹脂
23 コア金属粉末
24 下地めっき膜
25 貴金属めっき膜
26 板状電極
27 めっき膜
28、29 ザグリ加工
30 バンプ電極
31 セラミック多層基板
32 接続端子
33 アンダーフィル樹脂
34 半導体パッケージ(半導体部品)
35、37、39、40 接続端子
38 有機配線基板
36 受動素子(半導体部品)
41 半田バンプ電極用端子
42 半田バンプ電極
Claims (7)
- 1つ以上の半導体部品と1つ以上の導体部材とが電気的導通を伴って接続された構造を有する半導体装置であって、
前記半導体部品と前記導体部材との接続部間に銀を含む接合層が形成され、
前記接合層中には、空孔が前記接合層全域にほぼ均等に分散して形成され、
前記接合層に占める前記空孔の体積比率は5vol%〜70vol%の範囲にあり、
前記半導体部品と前記接合層、および前記接合層と前記導体部材のそれぞれが銀を結合材として金属的に接合された接続構造を形成し、
前記半導体部品は、パワートランジスタ素子を含み、
前記接合層に占める前記空孔の前記体積比率は20vol%〜70vol%の範囲であって、
前記導体部材の一部及び前記半導体部品は、樹脂によって封止され、
前記半導体部品は、第1の主面及び前記第1の主面とは反対側の第2の主面にそれぞれ第1の電極及び第2の電極を備え、
前記導体部材のうち、第1の導体部材は前記接合層を介して金属的に前記第1の電極に接合され、
前記導体部材のうち、第2の導体部材は前記接合層を介して金属的に前記第2の電極に接合され、
前記第1の導体部材及び前記第2の導体部材は、前記樹脂の外部まで延在し、
前記接合層に占める前記空孔の前記体積比率は50vol%〜70vol%の範囲であることを特徴とする半導体装置。 - 請求項1に記載の半導体装置において、
前記半導体部品は、高周波デバイス用素子を含み、
前記半導体部品の第1の主面には、複数の第1の電極が形成され、
前記半導体部品は、前記複数の第1の電極を介して前記導体部材と電気的に接続され、
前記複数の第1の電極は、前記接合層を介して前記導体部材と金属的に接合され、
前記接合層に占める前記空孔の前記体積比率は5vol%〜10vol%の範囲であることを特徴とする半導体装置。 - 請求項1または請求項2に記載の半導体装置において、
前記空孔の少なくとも一部に絶縁性の樹脂が充填されていることを特徴とする半導体装置。 - 半導体部品と導体部材とを金属結合により接続する接続材料であって、
350℃以下の温度で分解する有機銀化合物と、
最大粒子径が15μm〜200μmの良導電性の金属粉末と、
有機溶剤とを含み、
ペースト状となっており、
前記金属粉末は、銅、アルミニウム、ニッケル、銀、タングステン、モリブデン、マグネシウムまたは金のいずれかを主成分とするコア材と、前記コア材の最表面にコーティングされた銀、金、白金またはパラジウムの層を含む複合金属粉末で形成されていることを特徴とする接続材料。 - 請求項4に記載の接続材料において、
粒子径が1nm〜200nmの酸化銀微粉末および表面に有機皮膜が形成された金属銀微粉末の少なくとも一方を含むことを特徴とする接続材料。 - 請求項4または請求項5に記載の接続材料において、
前記金属粉末は、銀、金、銅あるいはニッケルの単一金属粉末、またはそれらのうちの選択された2つ以上から形成された金属粉末であることを特徴とする接続材料。 - 請求項6に記載の接続材料において、
前記コア材は、アルミニウムにジンケート処理を施したもの、あるいは銅から形成され、
前記コア材の表面には、銀の単層膜、ニッケル及び金の積層膜、またはニッケル及び銀の積層膜がめっき成膜されていることを特徴とする接続材料。
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