WO2007142175A1 - 接合方法 - Google Patents
接合方法 Download PDFInfo
- Publication number
- WO2007142175A1 WO2007142175A1 PCT/JP2007/061266 JP2007061266W WO2007142175A1 WO 2007142175 A1 WO2007142175 A1 WO 2007142175A1 JP 2007061266 W JP2007061266 W JP 2007061266W WO 2007142175 A1 WO2007142175 A1 WO 2007142175A1
- Authority
- WO
- WIPO (PCT)
- Prior art keywords
- joining
- powder
- metal
- bonding
- metal powder
- Prior art date
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- 238000000034 method Methods 0.000 title claims abstract description 36
- 229910052751 metal Inorganic materials 0.000 claims abstract description 59
- 239000002184 metal Substances 0.000 claims abstract description 59
- 239000000843 powder Substances 0.000 claims abstract description 36
- 238000010438 heat treatment Methods 0.000 claims abstract description 20
- 239000002245 particle Substances 0.000 claims abstract description 11
- KDLHZDBZIXYQEI-UHFFFAOYSA-N Palladium Chemical compound [Pd] KDLHZDBZIXYQEI-UHFFFAOYSA-N 0.000 claims abstract description 9
- 239000003960 organic solvent Substances 0.000 claims abstract description 9
- 238000001035 drying Methods 0.000 claims abstract description 8
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims abstract description 6
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 claims abstract description 6
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 claims abstract description 5
- 238000003825 pressing Methods 0.000 claims abstract description 5
- 238000005304 joining Methods 0.000 claims description 50
- 238000005245 sintering Methods 0.000 claims description 19
- 239000004065 semiconductor Substances 0.000 abstract description 15
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 abstract 2
- 229910052759 nickel Inorganic materials 0.000 abstract 1
- 238000005219 brazing Methods 0.000 description 14
- 239000000463 material Substances 0.000 description 10
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- 230000008646 thermal stress Effects 0.000 description 5
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 description 3
- 238000001816 cooling Methods 0.000 description 3
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- 238000002844 melting Methods 0.000 description 3
- 230000008018 melting Effects 0.000 description 3
- 229920000178 Acrylic resin Polymers 0.000 description 2
- 239000004925 Acrylic resin Substances 0.000 description 2
- 239000001856 Ethyl cellulose Substances 0.000 description 2
- ZZSNKZQZMQGXPY-UHFFFAOYSA-N Ethyl cellulose Chemical compound CCOCC1OC(OC)C(OCC)C(OCC)C1OC1C(O)C(O)C(OC)C(CO)O1 ZZSNKZQZMQGXPY-UHFFFAOYSA-N 0.000 description 2
- 229920000180 alkyd Polymers 0.000 description 2
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- 229920001249 ethyl cellulose Polymers 0.000 description 2
- 235000019325 ethyl cellulose Nutrition 0.000 description 2
- 239000010931 gold Substances 0.000 description 2
- 239000002923 metal particle Substances 0.000 description 2
- 229910052763 palladium Inorganic materials 0.000 description 2
- OAYXUHPQHDHDDZ-UHFFFAOYSA-N 2-(2-butoxyethoxy)ethanol Chemical compound CCCCOCCOCCO OAYXUHPQHDHDDZ-UHFFFAOYSA-N 0.000 description 1
- VXQBJTKSVGFQOL-UHFFFAOYSA-N 2-(2-butoxyethoxy)ethyl acetate Chemical compound CCCCOCCOCCOC(C)=O VXQBJTKSVGFQOL-UHFFFAOYSA-N 0.000 description 1
- 235000011470 Adenanthera pavonina Nutrition 0.000 description 1
- 240000001606 Adenanthera pavonina Species 0.000 description 1
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 1
- VVQNEPGJFQJSBK-UHFFFAOYSA-N Methyl methacrylate Chemical compound COC(=O)C(C)=C VVQNEPGJFQJSBK-UHFFFAOYSA-N 0.000 description 1
- LGRFSURHDFAFJT-UHFFFAOYSA-N Phthalic anhydride Natural products C1=CC=C2C(=O)OC(=O)C2=C1 LGRFSURHDFAFJT-UHFFFAOYSA-N 0.000 description 1
- 230000002457 bidirectional effect Effects 0.000 description 1
- JHIWVOJDXOSYLW-UHFFFAOYSA-N butyl 2,2-difluorocyclopropane-1-carboxylate Chemical compound CCCCOC(=O)C1CC1(F)F JHIWVOJDXOSYLW-UHFFFAOYSA-N 0.000 description 1
- 238000011109 contamination Methods 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 238000000280 densification Methods 0.000 description 1
- 239000003925 fat Substances 0.000 description 1
- 239000000945 filler Substances 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 230000001771 impaired effect Effects 0.000 description 1
- 238000011835 investigation Methods 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 238000002156 mixing Methods 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 239000010665 pine oil Substances 0.000 description 1
- 229910052697 platinum Inorganic materials 0.000 description 1
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- 230000002250 progressing effect Effects 0.000 description 1
- 229920005989 resin Polymers 0.000 description 1
- 239000011347 resin Substances 0.000 description 1
- 238000007650 screen-printing Methods 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
- 238000005476 soldering Methods 0.000 description 1
- 239000002904 solvent Substances 0.000 description 1
- 238000004528 spin coating Methods 0.000 description 1
- 238000003892 spreading Methods 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/102—Material of the semiconductor or solid state bodies
- H01L2924/1025—Semiconducting materials
- H01L2924/1026—Compound semiconductors
- H01L2924/1032—III-V
- H01L2924/10329—Gallium arsenide [GaAs]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/30—Technical effects
- H01L2924/35—Mechanical effects
- H01L2924/351—Thermal stress
Definitions
- the present invention relates to a method for joining a pair of joining members at a relatively low temperature. Specifically, the present invention relates to a method for performing die bonding and flip chip bonding of a chip to a substrate at a low temperature.
- brazing method power using brazing material Widely used as a joining method for various members.
- flux-less brazing material is used to prevent component contamination in order to die-bond to semiconductor chip substrates used in high-frequency and optical modules, and AuSn brazing material is used as such brazing material.
- Patent Document 1 For example, Patent Document 1,
- Patent Document 1 JP 2004-006521 A
- the brazing material is fused to one joining member (for example, a semiconductor chip) and then placed on the other joining member (for example, a substrate).
- the brazing filler metal is melted and solidified by heating to a temperature above the melting point of the brazing material.
- the bonding temperature is often set to a temperature of 300 ° C or higher in consideration of the melting point of the brazing material used (the melting point of the AuSn brazing material is about 280 ° C).
- the bonding temperature is set high, the thermal stress generated when cooling to room temperature after bonding increases, and there is a concern about the influence on the bonding member.
- the electrical characteristics of the semiconductor chip may vary due to thermal stress. Therefore, depending on the joining member, a method is desired in which the joining temperature is as low as possible in order to reduce thermal stress.
- the present invention has been made based on the background as described above, and an object thereof is to provide a bonding method having sufficient bonding strength at a relatively low temperature. Specifically, it provides a method that enables bonding even at temperatures below 300 ° C.
- the inventors of the present invention have studied a joining method that replaces the conventional brazing that can solve the above-described problems. As a result of the investigation, a bonding method using a metal paste having a predetermined configuration was found.
- the present invention is a method for joining a pair of joining members, including the following steps.
- the joining method according to the present invention is a joining method using a metal paste instead of the brazing material.
- the metal paste applied to the joining member is pressurized while being heated, and thereby the metal powder in the paste is joined while being plastically deformed to form a dense joint and joining is performed.
- the paste is sintered before pressing to obtain a metal powder sintered body.
- the metal paste used in the present invention is a gold powder, silver powder, platinum powder, or palladium having a purity of 99.9% by weight or more and an average particle diameter of 0.005 / ⁇ ⁇ to 1.0 m.
- a mixture of one or more metal powders selected from powder and an organic solvent is used.
- the purity of the metal powder is required to be as high as 99.9% by weight because if the purity is low, the hardness of the powder increases and plastic deformation becomes difficult.
- the average particle size of the metal powder 1.
- a metal powder having a particle size exceeding O 2 / zm is difficult to express a preferable proximity state during sintering described later.
- the lower limit of 0.005 m is to consider that when the particle size is less than this particle size, it aggregates and becomes difficult to handle immediately when made into a paste.
- the powder power of any of gold, silver, platinum or palladium is When used for bonding semiconductor chips, such as soldering, the metal paste is also required to have electrical conductivity. These metals have excellent electrical conductivity.
- ester alcohol As the organic solvent constituting the metal paste, ester alcohol, tervineol, pine oil, butyl carbitol acetate, butyl carbitol and carbitol are preferable.
- ester alcohol-based organic solvent 2,2,4-trimethyl-1-hydroxypentaisobutyrate (C 3 H 2 O 3) can be mentioned.
- the metal paste may contain one or more selected from acrylic resin, cellulose resin, and alkyd resin. If these fats and the like are further added, the metal powder in the metal paste is prevented from agglomerating and becomes more homogeneous.
- acrylic resin include methyl methacrylate polymer
- examples of the cellulose resin include ethyl cellulose
- examples of the alkyd resin include phthalic anhydride resin. Of these, ethylcellulose is particularly preferred.
- a method of applying the metal paste to the bonding member various methods can be used depending on the size of the bonding portion, such as a spin coating method, a screen printing method, an ink jet method, and a method of spreading the paste with a spatula after dropping. Can be used.
- the reason for drying the applied metal paste is to remove the organic solvent in the paste. This drying is preferably performed at -20 ° C or higher and 5 ° C or lower.
- the atmosphere in the drying process may be a reduced pressure atmosphere. This prevents moisture in the atmosphere from condensing on the metal powder surface during the drying process.
- the force is preferably 1 OOPa or less, more preferably lOPa or less.
- the degree of vacuum in this atmosphere is set according to the volatility of the organic solvent in the metal paste.
- the metal particles in the paste and the bonding surface (paste application surface) of the bonding member and the metal particles are in close contact with each other, and the metal paste becomes a metal powder sintered body.
- This metal powder sintered body is heated and pressed at the time of joining, which will be described later, so that plastic deformation occurs at the contact portion, and bonds between metal atoms occur at the deformation interface, and the sintered body is densely joined. Part. In this regard, even if the paste is pressed without sintering, the particle gaps are expanded. , Bonding between particles does not occur and bonding is not possible.
- the sintering temperature is 80 to 300 ° C. This is because the above point contact does not occur below 80 ° C. On the other hand, if sintering at a temperature exceeding 300 ° C, sintering proceeds excessively, necking between the metal powders proceeds and bonds firmly, and even if pressed after that, it does not become a dense joint. In particular, the strain tends to remain during pressurization. In the first place, the present invention aims at joining at 300 ° C. or lower from the viewpoint of protecting the joining member.
- the heating time during sintering is preferably 30 to 120 minutes.
- this sintering is preferably performed in a state where no pressure is applied.
- the joining member to which the metal paste is applied and the other joining member are stacked and pressed.
- the pressurizing pressure is preferably larger than the yield strength of the metal powder sintered body for densification of the joint. Further, this pressurization may be performed in one direction from any of the joining members, or a bidirectional force may be performed.
- the joining step it is necessary to pressurize the metal powder sintered body while heating it. Without heating, the joint is not sufficiently densified and the strength of the joint is insufficient.
- the heating temperature at this time is preferably 80 to 300 ° C. This is because bonding is not possible at temperatures below 80 ° C, and thermal strain at the time of cooling increases at temperatures above 300 ° C.
- the bonding step it is preferable to apply ultrasonic waves in addition to heating.
- ultrasonic waves By heating or a combination of heating and ultrasonic waves, plastic deformation and bonding of the metal powder can be promoted and a stronger joint can be formed.
- the conditions are preferably an amplitude of 0.5 to 5 / ⁇ ⁇ and an application time of 0.5 to 3 seconds. This is because application of excessive ultrasonic waves damages the joining member.
- the heating and the application of ultrasonic waves in the joining step may be performed on the sintered power of at least the metal powder, but may be performed on the entire joining member.
- a heating method it is easy to use heat transfer with a tool force when pressurizing the joining member.
- ultrasonic waves it is easy to apply ultrasonic waves to oscillate the tool force for pressurizing the joining member.
- FIG. 1 is a diagram schematically illustrating a bonding process in the present embodiment.
- FIG. 2 Structure observation results of sintered metal powder sintered body and joint after joining.
- FIG. 3 is a diagram showing the structure of a sintered metal powder when sintering is performed at 400 ° C.
- FIG. 4 is a diagram showing a test method for bonding strength.
- FIG. 1 schematically shows a bonding process of a semiconductor chip (GaAs chip) to a substrate performed in this embodiment.
- GaAs chip semiconductor chip
- Example 1 First, a metal paste 20 was applied to a semiconductor chip 10.
- the surface of the semiconductor chip 10 is pre-fixed with Ti (0.5 / ⁇ ⁇ ), Ni d / z m ⁇ (1 / ⁇ ⁇ ), Pd d / z m).
- the metal paste used is gold powder (average particle size: 0.3 m) with a purity of 99.99% by weight produced by a wet reduction method, and ester alcohol (2, 2, 4-trimethyl 3-hydroxy) as an organic solvent. It is prepared by mixing pentaisobutyrate (CHO))
- the metal paste had an area of 0.0033 mm 2 and was applied at 100 locations on the chip.
- the metal paste 20 was applied, it was vacuum dried at -10 ° C with a dryer. Then, the chip was heated in an electric furnace at 230 ° C. for 30 minutes to sinter the metal paste to obtain a powder metal sintered body 21.
- a Ni plate 30 pre-plated with Au (: m), Pd (: m) was placed on the semiconductor chip 10 and joined by heating and pressing.
- the pressure condition at this time was 0.2 N per sintered body.
- the heating was set to 230 ° C due to the heat transfer of the tool.
- the heating and pressurizing time in this joining process was 10 minutes.
- Example 2 Here, joining was performed by applying ultrasonic waves simultaneously with pressurization and heating of the sintered bodies.
- a metal paste was applied to a semiconductor chip * dried, sintered, and then a Ni plate was placed thereon. Then, heating and pressurization were performed in the same manner as in Example 1 ( Pressurization pressure was 0.33 N per sintered body;).
- the ultrasonic wave was applied from a tool, the amplitude was 3.2 / ⁇ ⁇ , the output was 3.5 W, and the application time was 1 second.
- the bonding strength of each example exceeds lOOMPa. Considering the joining of electronic components, it can be said that the joint strength is sufficient. It can also be seen that the bonding strength is improved by using ultrasonic wave application at the time of bonding.
- various joining members can be joined at a relatively low temperature, and the joining members can be protected from thermal stress in the cooling process after joining.
- the present invention is useful when bonding a semiconductor chip or the like, which may be affected by thermal stress, to a substrate, and can be applied to die bonding, flip chip bonding, and the like. When applied to flip chip bonding, the present invention can be applied to form bumps on a semiconductor chip.
Landscapes
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Powder Metallurgy (AREA)
- Die Bonding (AREA)
- Wire Bonding (AREA)
Description
Claims
Priority Applications (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
EP07744651.6A EP1916709A4 (en) | 2006-06-05 | 2007-06-04 | BINDING METHOD |
US12/063,264 US7789287B2 (en) | 2006-06-05 | 2007-06-04 | Method of bonding |
CN2007800008088A CN101341585B (zh) | 2006-06-05 | 2007-06-04 | 接合方法 |
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2006-156085 | 2006-06-05 | ||
JP2006156085A JP4638382B2 (ja) | 2006-06-05 | 2006-06-05 | 接合方法 |
Publications (1)
Publication Number | Publication Date |
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WO2007142175A1 true WO2007142175A1 (ja) | 2007-12-13 |
Family
ID=38801426
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
PCT/JP2007/061266 WO2007142175A1 (ja) | 2006-06-05 | 2007-06-04 | 接合方法 |
Country Status (6)
Country | Link |
---|---|
US (1) | US7789287B2 (ja) |
EP (1) | EP1916709A4 (ja) |
JP (1) | JP4638382B2 (ja) |
KR (1) | KR100976026B1 (ja) |
CN (1) | CN101341585B (ja) |
WO (1) | WO2007142175A1 (ja) |
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- 2007-06-04 CN CN2007800008088A patent/CN101341585B/zh active Active
- 2007-06-04 KR KR1020087001991A patent/KR100976026B1/ko active IP Right Grant
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---|---|---|---|---|
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WO2014153405A1 (en) * | 2013-03-20 | 2014-09-25 | Texas Instruments Incorporated | Semiconductor device having reinforced wire bond to metal terminal |
JP2016111083A (ja) * | 2014-12-03 | 2016-06-20 | 三菱電機株式会社 | パワーモジュール及びその製造方法 |
Also Published As
Publication number | Publication date |
---|---|
CN101341585A (zh) | 2009-01-07 |
KR20080027883A (ko) | 2008-03-28 |
JP2007324523A (ja) | 2007-12-13 |
EP1916709A4 (en) | 2014-07-09 |
CN101341585B (zh) | 2010-06-02 |
JP4638382B2 (ja) | 2011-02-23 |
KR100976026B1 (ko) | 2010-08-17 |
US7789287B2 (en) | 2010-09-07 |
US20090230172A1 (en) | 2009-09-17 |
EP1916709A1 (en) | 2008-04-30 |
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