JP5931246B1 - パッケージの製造方法及び該方法により製造されるパッケージ - Google Patents
パッケージの製造方法及び該方法により製造されるパッケージ Download PDFInfo
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- 238000004519 manufacturing process Methods 0.000 title claims abstract description 21
- 238000000034 method Methods 0.000 title claims description 41
- 229910052751 metal Inorganic materials 0.000 claims abstract description 142
- 239000002184 metal Substances 0.000 claims abstract description 142
- 239000003566 sealing material Substances 0.000 claims abstract description 126
- 239000011162 core material Substances 0.000 claims abstract description 100
- 239000000758 substrate Substances 0.000 claims abstract description 92
- 239000000843 powder Substances 0.000 claims abstract description 63
- 238000007789 sealing Methods 0.000 claims abstract description 51
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 claims abstract description 24
- KDLHZDBZIXYQEI-UHFFFAOYSA-N Palladium Chemical compound [Pd] KDLHZDBZIXYQEI-UHFFFAOYSA-N 0.000 claims abstract description 20
- 239000010931 gold Substances 0.000 claims abstract description 14
- 239000002245 particle Substances 0.000 claims abstract description 13
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims abstract description 12
- 229910052737 gold Inorganic materials 0.000 claims abstract description 12
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 claims abstract description 11
- 229910052697 platinum Inorganic materials 0.000 claims abstract description 11
- 229910052709 silver Inorganic materials 0.000 claims abstract description 11
- 239000004332 silver Substances 0.000 claims abstract description 11
- 229910052763 palladium Inorganic materials 0.000 claims abstract description 10
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 claims description 12
- 239000010936 titanium Substances 0.000 claims description 7
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 6
- 229910052802 copper Inorganic materials 0.000 claims description 6
- 239000010949 copper Substances 0.000 claims description 6
- 229910052759 nickel Inorganic materials 0.000 claims description 6
- 150000002739 metals Chemical class 0.000 claims description 5
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 claims description 4
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 claims description 4
- 229910045601 alloy Inorganic materials 0.000 claims description 4
- 239000000956 alloy Substances 0.000 claims description 4
- 239000011651 chromium Substances 0.000 claims description 4
- 229910052804 chromium Inorganic materials 0.000 claims description 4
- 229910052719 titanium Inorganic materials 0.000 claims description 4
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 claims description 4
- 229910052721 tungsten Inorganic materials 0.000 claims description 4
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- BWVZAZPLUTUBKD-UHFFFAOYSA-N 3-(5,6,6-Trimethylbicyclo[2.2.1]hept-1-yl)cyclohexanol Chemical compound CC1(C)C(C)C2CC1CC2C1CCCC(O)C1 BWVZAZPLUTUBKD-UHFFFAOYSA-N 0.000 description 2
- 239000004925 Acrylic resin Substances 0.000 description 2
- 229920000178 Acrylic resin Polymers 0.000 description 2
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
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- UODXCYZDMHPIJE-UHFFFAOYSA-N menthanol Chemical compound CC1CCC(C(C)(C)O)CC1 UODXCYZDMHPIJE-UHFFFAOYSA-N 0.000 description 2
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- OJRJDENLRJHEJO-UHFFFAOYSA-N 2,4-diethylpentane-1,5-diol Chemical compound CCC(CO)CC(CC)CO OJRJDENLRJHEJO-UHFFFAOYSA-N 0.000 description 1
- OAYXUHPQHDHDDZ-UHFFFAOYSA-N 2-(2-butoxyethoxy)ethanol Chemical compound CCCCOCCOCCO OAYXUHPQHDHDDZ-UHFFFAOYSA-N 0.000 description 1
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- 229910015363 Au—Sn Inorganic materials 0.000 description 1
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- LGRFSURHDFAFJT-UHFFFAOYSA-N Phthalic anhydride Natural products C1=CC=C2C(=O)OC(=O)C2=C1 LGRFSURHDFAFJT-UHFFFAOYSA-N 0.000 description 1
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- 229910052786 argon Inorganic materials 0.000 description 1
- 239000013590 bulk material Substances 0.000 description 1
- JHIWVOJDXOSYLW-UHFFFAOYSA-N butyl 2,2-difluorocyclopropane-1-carboxylate Chemical compound CCCCOC(=O)C1CC1(F)F JHIWVOJDXOSYLW-UHFFFAOYSA-N 0.000 description 1
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- SQIFACVGCPWBQZ-UHFFFAOYSA-N delta-terpineol Natural products CC(C)(O)C1CCC(=C)CC1 SQIFACVGCPWBQZ-UHFFFAOYSA-N 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
- H01L23/29—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the material, e.g. carbon
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
- B81C1/00—Manufacture or treatment of devices or systems in or on a substrate
- B81C1/00015—Manufacture or treatment of devices or systems in or on a substrate for manufacturing microsystems
- B81C1/00261—Processes for packaging MEMS devices
- B81C1/00269—Bonding of solid lids or wafers to the substrate
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
- B81C3/00—Assembling of devices or systems from individually processed components
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/02—Containers; Seals
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
- H01L23/31—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
- B81C2203/00—Forming microstructural systems
- B81C2203/01—Packaging MEMS
- B81C2203/0118—Bonding a wafer on the substrate, i.e. where the cap consists of another wafer
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
- B81C2203/00—Forming microstructural systems
- B81C2203/01—Packaging MEMS
- B81C2203/0172—Seals
- B81C2203/019—Seals characterised by the material or arrangement of seals between parts
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
- B81C2203/00—Forming microstructural systems
- B81C2203/03—Bonding two components
- B81C2203/033—Thermal bonding
- B81C2203/036—Fusion bonding
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- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Power Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Powder Metallurgy (AREA)
- Micromachines (AREA)
Abstract
Description
シリコン表面にスピンコート法でレジスト膜を形成後、芯材になる部分にレジスト膜を残すようにフォトリソ加工を施した。次に、シリコンドライエッチング装置(商品面:PEGASUS、住友精密工業株式会社製)によりレジスト膜がない部分を10μm掘り下げた。その後、芯材上部に残ったレジスト膜を除去し芯材を形成した。最後に、ウエハ全面にTi(0.05μm)/Pt(0.01μm)/Au(0.2μm)(Tiが基板側)をスパッタ法で多層の金属膜を形成した。
最初にスパッタ法でウエハ全面にTi(0.05μm)/Pt(0.01μm)/Au(0.2μm)を形成した。次に、スピンコート法でレジスト膜を形成後、芯材となる部分を開口するようにフォトリソ加工を施した。最後に電気めっき法で銅(7μm)及びニッケル(2μm)、更に、金(0.5μm)の順で成膜して芯材及び金属膜を成した後、レジスト膜を除去した。
Claims (7)
- 少なくとも一方に封止材が形成された一対の基板を重ね合わせて接合することで、前記封止材により包囲された封止領域の内部を気密封止する工程を含むパッケージの製造方法において、
前記封止材は、純度が99.9重量%以上であり、平均粒径が0.005μm〜1.0μmである金、銀、パラジウム、白金から選択される一種以上の金属粉末を焼結してなる焼結体より形成されたものであり、
基板上に、断面形状において前記封止材の幅よりも狭い幅を有し、周囲から突出する芯材が少なくとも一つ形成されており、
前記一対の基板を接合するとき、前記芯材が前記封止材を圧縮するようになっており、
前記基板の表面に、金、銀、パラジウム、白金、チタン、クロム、銅、タングステン、ニッケル、又は、これらの金属の合金のいずれかよりなるバルク状の金属膜が形成され、
更に、前記芯材の頂面に、金、銀、パラジウム、白金、チタン、クロム、銅、タングステン、ニッケル、又は、これらの金属の合金のいずれかよりなるバルク状の金属膜が形成されていることを特徴とするパッケージの製造方法。 - 封止材がいずれか一方の基板に形成されており、芯材は前記封止材が形成されていない基板に形成されている請求項1記載のパッケージの製造方法。
- 封止材がいずれか一方の基板に形成されており、芯材は前記封止材が形成されている前記基板に形成されており、前記芯材の少なくとも頂面部分を前記封止材が覆っている請求項1記載のパッケージの製造方法。
- 封止材が双方の基板に形成されており、芯材は前記封止材が形成された前記基板の少なくともいずれか一方に形成されており、前記芯材の少なくとも頂面部分を前記封止材が覆っている請求項1記載のパッケージの製造方法。
- 芯材両側に隣接する領域に凹部を形成することで、断面凸状の芯材が形成される請求項1〜請求項4のいずれかに記載のパッケージの製造方法。
- 封止材断面における、芯材の幅の合計(W´)と封止材の幅(W)との比(W´/W)が、0.05以上0.95以下である請求項1〜請求項5のいずれかに記載のパッケージの製造方法。
- 金属膜の厚さは、0.01μm以上5μm以下である請求項1〜請求項6のいずれかに記載のパッケージの製造方法。
Priority Applications (7)
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JP2015077160A JP5931246B1 (ja) | 2015-04-03 | 2015-04-03 | パッケージの製造方法及び該方法により製造されるパッケージ |
TW104125422A TWI557814B (zh) | 2015-04-03 | 2015-08-05 | 封裝體之製造方法及藉由該方法所製造的封裝體 |
PCT/JP2015/073101 WO2016157562A1 (ja) | 2015-04-03 | 2015-08-18 | パッケージの製造方法及び該方法により製造されるパッケージ |
CN201580078557.XA CN107408535B (zh) | 2015-04-03 | 2015-08-18 | 封装体的制造方法和通过该方法制造的封装体 |
EP15887704.3A EP3279934B1 (en) | 2015-04-03 | 2015-08-18 | Package production method and package produced by same method |
KR1020177026498A KR101890085B1 (ko) | 2015-04-03 | 2015-08-18 | 패키지의 제조 방법 및 해당 방법에 의해 제조되는 패키지 |
US15/556,161 US10125015B2 (en) | 2015-04-03 | 2015-08-18 | Package production method and package produced by the method |
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JP2015077160A JP5931246B1 (ja) | 2015-04-03 | 2015-04-03 | パッケージの製造方法及び該方法により製造されるパッケージ |
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US (1) | US10125015B2 (ja) |
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Cited By (1)
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US12000019B2 (en) | 2019-08-05 | 2024-06-04 | Tanaka Kikinzoku Kogyo K.K. | Gold powder, production method for gold powder, and gold paste |
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US10002844B1 (en) | 2016-12-21 | 2018-06-19 | Invensas Bonding Technologies, Inc. | Bonded structures |
US10508030B2 (en) | 2017-03-21 | 2019-12-17 | Invensas Bonding Technologies, Inc. | Seal for microelectronic assembly |
JP6237969B1 (ja) * | 2017-03-29 | 2017-11-29 | 三菱電機株式会社 | 中空封止デバイス及びその製造方法 |
JP6738760B2 (ja) | 2017-04-13 | 2020-08-12 | 田中貴金属工業株式会社 | 貫通孔の封止構造及び封止方法、並びに、貫通孔を封止するための転写基板 |
US11380597B2 (en) | 2017-12-22 | 2022-07-05 | Invensas Bonding Technologies, Inc. | Bonded structures |
US10923408B2 (en) | 2017-12-22 | 2021-02-16 | Invensas Bonding Technologies, Inc. | Cavity packages |
US11004757B2 (en) | 2018-05-14 | 2021-05-11 | Invensas Bonding Technologies, Inc. | Bonded structures |
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JP2000294664A (ja) * | 1999-04-02 | 2000-10-20 | Sumitomo Metal Electronics Devices Inc | 電子部品用パッケージ |
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JP2009117869A (ja) * | 2009-02-23 | 2009-05-28 | Hitachi Metals Ltd | 機能素子パッケージの製造方法 |
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EP3279934A1 (en) | 2018-02-07 |
KR20170120144A (ko) | 2017-10-30 |
US20180044175A1 (en) | 2018-02-15 |
KR101890085B1 (ko) | 2018-08-20 |
TWI557814B (zh) | 2016-11-11 |
EP3279934B1 (en) | 2024-04-10 |
WO2016157562A1 (ja) | 2016-10-06 |
CN107408535B (zh) | 2019-11-29 |
US10125015B2 (en) | 2018-11-13 |
CN107408535A (zh) | 2017-11-28 |
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TW201637103A (zh) | 2016-10-16 |
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