TW201946130A - 半導體裝置製造方法 - Google Patents

半導體裝置製造方法 Download PDF

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Publication number
TW201946130A
TW201946130A TW108113303A TW108113303A TW201946130A TW 201946130 A TW201946130 A TW 201946130A TW 108113303 A TW108113303 A TW 108113303A TW 108113303 A TW108113303 A TW 108113303A TW 201946130 A TW201946130 A TW 201946130A
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Taiwan
Prior art keywords
semiconductor wafer
sintering
bonding
semiconductor
material layer
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TW108113303A
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English (en)
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TWI798419B (zh
Inventor
三田亮太
市川智昭
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日商日東電工股份有限公司
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Publication of TW201946130A publication Critical patent/TW201946130A/zh
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Publication of TWI798419B publication Critical patent/TWI798419B/zh

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Abstract

本發明提供一種適於在經由半導體晶片之燒結接合之半導體裝置製造方法中，一面降低燒結接合用材料之損耗一面高效率地進行燒結接合用材料對各半導體晶片之供給之技術。
本製造方法包含例如以下步驟：自切割膠帶T1上之半導體晶圓W，形成包含複數個半導體晶片11之半導體晶圓分割體10；對切割膠帶T1上之半導體晶圓分割體10貼合燒結接合用片材20；自例如切割膠帶T1拾取伴有來自燒結接合用片材20之燒結接合用材料層21之半導體晶片11；將附有燒結接合用材料層之半導體晶片11介隔該燒結接合用材料層21暫時固定於基板；及自介置於暫時固定之半導體晶片11與基板之間之燒結接合用材料層21經由加熱過程形成燒結層，而將該半導體晶片11接合於基板。

Description

半導體裝置製造方法
本發明係關於一種製造所謂功率半導體裝置等半導體裝置之方法。
於半導體裝置之製造中，作為用以對引線框架或絕緣電路基板等支持基板將半導體晶片一面獲得與支持基板側之電性連接一面進行黏晶之技術，已知有於支持基板與晶片之間形成Au-Si共晶合金層實現接合狀態之技術、或利用焊料或含有導電性粒子之樹脂作為接合材之技術。
另一方面，負責電力之供給控制之功率半導體裝置之普及於近年來較為顯著。功率半導體裝置起因於動作時之通電量較大而發熱量較大之情形較多。因此，於功率半導體裝置之製造中，對於將半導體晶片一面獲得與支持基板側之電性連接一面黏晶於支持基板之技術，要求高溫動作時亦能夠實現可靠性較高之接合狀態。於採用SiC或GaN作為半導體材料，謀求高溫動作化之功率半導體裝置中，此種要求尤為強烈。而且，為了應對此種要求，作為伴有電性連接之黏晶技術，提出有使用含有燒結性粒子與溶劑等之燒結接合用之組合物之技術。
於使用含有燒結性粒子之燒結接合用材料進行之黏晶中，首先，將半導體晶片介隔燒結接合用材料以特定之溫度、負載條件載置於支持基板之晶片接合預定部位。此後，以於支持基板與其上之半導體晶片之間產生燒結接合用材料中之溶劑之揮發等且於燒結性粒子間進行燒結之方式，進行特定之溫度、加壓條件下之加熱步驟。藉此，於支持基板與半導體晶片之間形成燒結層，將半導體晶片對於支持基板一面進行電性連接一面進行機械接合。此種技術例如記載於下述專利文獻1、2。
[先前技術文獻]
[專利文獻]
[專利文獻1]國際公開第2008/065728號
[專利文獻2]日本專利特開2013-039580號公報
[發明所欲解決之問題]
提出有於進行燒結接合之黏晶之半導體裝置製造過程中，為了將燒結接合用材料一次供給至複數個半導體晶片，而經由例如下之過程。首先，於單面具有黏著面之加工用膠帶或其黏著面之上排列複數個半導體晶片。繼而，將塑膠膜表面上伴有燒結接合用材料層之片材體之該材料層之側對於加工用膠帶上之半導體晶片陣列一面按壓一面進行貼合。繼而，於燒結接合用材料層，一面將壓接於半導體晶片之部位殘留於該半導體晶片上，一面進行該片材體之剝離。藉由該片材體之貼合與其後之剝離，而自片材體進行燒結接合用材料對各半導體晶片之轉印。根據此種技術，能夠將燒結接合用材料一次供給至複數個半導體晶片。然而，於此種技術中，燒結接合用材料之損耗相對較大。其原因如下所述。
半導體晶片對加工用膠帶上之排列係為了避免排列作業中產生不招致晶片之缺陷之晶片彼此之接觸，而例如一面充分確保相鄰之晶片間之分離距離一面進行。該分離距離為800～2000 μm左右。亦即，於排列作業後之加工用膠帶上之半導體晶片陣列中之半導體晶片間存在顯著之空隙。因此，於用於燒結接合用材料之供給之上述片材體中，對半導體晶片陣列之貼合時壓接於各半導體晶片之燒結接合用材料層之各部位(燒結接合用材料層之一部分)被轉印至半導體晶片。於貼合時，燒結接合用材料層中朝向半導體晶片間之空隙之部位不轉印至半導體晶片。燒結接合用材料層中不轉印至半導體晶片之部位成為損耗。存在排列於加工用膠帶上之半導體晶片間之空隙越大，則該損耗越增大之傾向。
本發明係基於如以上之情況而設想者，其目的在於提供一種適於一面降低燒結接合用材料之損耗一面高效率地進行燒結接合用材料對各半導體晶片之供給之具備半導體晶片燒結接合部位之半導體裝置之製造方法。
[解決問題之技術手段]
藉由本發明之第1態樣而提供之半導體裝置製造方法至少包含如下之分割步驟、貼合步驟、拾取步驟、暫時固定步驟、及燒結接合步驟。本方法適於製造具備半導體晶片之燒結接合部位之功率半導體裝置等半導體裝置。
於分割步驟中，自處於保持於切割膠帶上之狀態之半導體晶圓，形成包含複數個半導體晶片之半導體晶圓分割體。於本步驟中，可藉由對半導體晶圓之刀片切割而形成半導體晶圓分割體(第1技術)。或者，於本步驟中，亦可於對處於保持於切割膠帶上之狀態之半導體晶圓之隱形切割之後，藉由將保持該半導體晶圓之切割膠帶暫時展延而將該半導體晶圓斷裂，形成半導體晶圓分割體(第2技術)。於隱形切割中，於半導體晶圓內形成向複數個半導體晶片之斷裂用之脆弱化區域。經由隱形切割之半導體晶圓獲得可藉由保持其之切割膠帶之展延而沿著脆弱化區域斷裂之狀態。經由該等第1技術或第2技術形成之半導體晶圓分割體之半導體晶片間距離為10～500 μm左右。
於貼合步驟中，將包含含有導電性金屬之燒結性粒子及黏合劑成分之燒結接合用片材，自與切割膠帶相反之側貼合於切割膠帶上之半導體晶圓分割體。藉此，對半導體晶片之各者，使來自燒結接合用片材之燒結接合用材料壓接進行燒結接合用材料層之轉印。
於拾取步驟中，將半導體晶片與密接於該半導體晶片之燒結接合用材料層一同地拾取，獲得附有燒結接合用材料層之半導體晶片。於拾取步驟中，例如自切割膠帶，拾取附有燒結接合用材料層之半導體晶片。或者，於上述貼合步驟與拾取步驟之間，實施進行晶圓加工用膠帶對於附有燒結接合用片材之半導體晶圓分割體中之燒結接合用片材側之貼合、及切割膠帶自該半導體晶圓分割體之剝離之步驟之情形時，於拾取步驟中，自晶圓加工用膠帶拾取附有燒結接合用材料層之半導體晶片。
於暫時固定步驟中，將附有燒結接合用材料層之半導體晶片介隔該燒結接合用材料層對基板壓接進行暫時固定。
於燒結接合步驟中，自介置於被暫時固定之半導體晶片與基板之間之燒結接合用材料層，經由加熱過程形成燒結層，而將該半導體晶片接合於基板燒結。
於本半導體裝置製造方法中，於該貼合步驟中，如上所述，對切割膠帶上之半導體晶圓分割體(包含已完成單片化之複數個半導體晶片)，貼合用於燒結接合用材料之供給之燒結接合用片材。此種構成適於一次地高效率進行燒結接合用材料對複數個半導體晶片之各者之供給、即燒結接合用材料層對複數個半導體晶片之各者之轉印形成。
另外，於本半導體裝置製造方法中，於該分割步驟中，形成於切割膠帶上之半導體晶圓分割體(即，保持於切割膠帶之狀態下之經由向晶片單片化之半導體晶圓)之晶片間距離如上所述較短為10～500 μm左右。於貼合步驟中，對此種半導體晶圓分割體貼合燒結接合用片材(燒結接合用片材不對經由來自半導體晶圓之單片化之後排列於加工用膠帶上之於晶片間伴有相對較大之空隙的複數個半導體晶片進行貼合)。因此，本半導體裝置製造方法適於在燒結接合用材料對複數個半導體晶片之各者之一次性供給時，降低燒結接合用材料之損耗。
如以上所述，本發明之第1態樣之本半導體裝置製造方法適於一面降低燒結接合用材料之損耗一面高效率地進行燒結接合用材料對各半導體晶片之供給。
本方法較佳為於分割步驟與貼合步驟之間，更包含將保持半導體晶圓分割體之切割膠帶暫時展延之步驟。此種構成於拾取步驟中適當地拾取各半導體晶片之方面較佳。
本方法較佳為於貼合步驟與拾取步驟之間，更包含將保持半導體晶圓分割體之切割膠帶暫時展延之展延步驟。此種構成於拾取步驟前使燒結接合用片材斷裂，且拾取步驟中適當地拾取各半導體晶片之方面較佳。又，於此種展延步驟與拾取步驟之間，實施進行晶圓加工用膠帶對於包含來自燒結接合用片材之燒結接合用材料層所密接之複數個半導體晶片之半導體晶圓分割體中之燒結接合用材料層側之貼合、及切割膠帶自該半導體晶圓分割體之剝離之步驟之情形時，於拾取步驟中，自晶圓加工用膠帶拾取附有燒結接合用材料層之半導體晶片。
藉由本發明之第2態樣提供之半導體裝置製造方法包含如下之隱形切割步驟、貼合步驟、斷裂步驟、拾取步驟、暫時固定步驟、及燒結接合步驟。於隱形切割步驟中，於處於保持於切割膠帶上之狀態之半導體晶圓內，形成向複數個半導體晶片之斷裂用之脆弱化區域。於貼合步驟中，將包含含有導電性金屬之燒結性粒子及黏合劑成分之燒結接合用片材自與切割膠帶相反之側貼合於切割膠帶上之半導體晶圓。於斷裂步驟中，藉由將保持半導體晶圓之切割膠帶展延，而將該半導體晶圓與燒結接合用片材一同地斷裂，形成包含來自該燒結接合用片材之燒結接合用材料層所密接之複數個半導體晶片之半導體晶圓分割體。於拾取步驟中，自切割膠帶拾取附有燒結接合用材料層之半導體晶片。或者，於上述斷裂步驟與拾取步驟之間，實施進行晶圓加工用膠帶對於包含來自燒結接合用片材之燒結接合用材料層所密接之複數個半導體晶片之半導體晶圓分割體中之燒結接合用材料層側之貼合、及切割膠帶自該半導體晶圓分割體之剝離之步驟之情形時，於拾取步驟中，自晶圓加工用膠帶拾取附有燒結接合用材料層之半導體晶片。於暫時固定步驟中，將附有燒結接合用材料層之半導體晶片介隔該燒結接合用材料層暫時固定於基板。於燒結接合步驟中，自介置於暫時固定之半導體晶片及基板之間之燒結接合用材料層，經由加熱過程形成燒結層，而將該半導體晶片燒結接合於基板。
於本發明之第2態樣之半導體裝置製造方法中，於該貼合步驟中，如上所述，對切割膠帶上之隱形切割後之半導體晶圓，貼合用於燒結接合用材料之供給之燒結接合用片材。此種構成適於一次地高效率進行燒結接合用材料對半導體晶圓中單片化為半導體晶片之各部位之供給、即燒結接合用材料層對半導體晶圓中單片化為半導體晶片之各部位之轉印形成。
另外，於本發明之第2態樣之半導體裝置製造方法之貼合步驟中，對不經由向晶片之單片化之半導體晶圓(即，不伴有晶片間空隙之半導體晶圓)，貼合燒結接合用片材。於此種貼合步驟中，用於燒結接合用材料之供給之燒結接合用片材於貼合於半導體晶圓之區域中可對於該晶圓整面地壓接。因此，本半導體裝置製造方法適於降低供給至該過程中所獲得之複數個半導體晶片之燒結接合用材料之損耗。
如以上所述，本發明之第2態樣之本半導體裝置製造方法適於一面降低燒結接合用材料之損耗一面高效率地進行燒結接合用材料對各半導體晶片之供給。
藉由本發明之第3態樣提供之半導體裝置製造方法包含如下之貼合步驟、單片化步驟、拾取步驟、暫時固定步驟、及燒結接合步驟。於貼合步驟中，對保持於切割膠帶上之半導體晶圓，自與切割膠帶相反之側貼附燒結接合用片材。該燒結接合用片材包含含有導電性金屬之燒結性粒子及黏合劑成分。於單片化步驟中，將切割膠帶上之半導體晶圓與燒結接合用片材一同地單片化，形成包含來自該燒結接合用片材之燒結接合用材料層所密接之複數個半導體晶片之半導體晶圓分割體。於該單片化步驟中，可藉由對半導體晶圓及其上之燒結接合用片材之刀片切割而形成半導體晶圓分割體。或者，於單片化步驟中，可於處於保持於切割膠帶上之狀態之半導體晶圓內，形成向複數個半導體晶片之斷裂用之脆弱化區域之後，藉由保持該半導體晶圓之切割膠帶之展延而將該半導體晶圓及其上之燒結接合用片材斷裂，形成半導體晶圓分割體。於拾取步驟中，將半導體晶片及與其密接之燒結接合用材料層一同地拾取，獲得附有燒結接合用材料層之半導體晶片。於該拾取步驟中，自切割膠帶拾取附有燒結接合用材料層之半導體晶片。或者，於上述單片化步驟與拾取步驟之間，實施進行晶圓加工用膠帶對於包含來自燒結接合用片材之燒結接合用材料層所密接之複數個半導體晶片之半導體晶圓分割體中之燒結接合用材料層側之貼合、及切割膠帶自該半導體晶圓分割體之剝離之步驟之情形時，於拾取步驟中，自晶圓加工用膠帶拾取附有燒結接合用材料層之半導體晶片。於暫時固定步驟中，將附有燒結接合用材料層之半導體晶片介隔該燒結接合用材料層暫時固定於基板。於燒結接合步驟中，自介置於暫時固定之半導體晶片及基板之間之燒結接合用材料層，經由加熱過程形成燒結層，而將該半導體晶片燒結接合於基板。
於本發明之第3態樣之半導體裝置製造方法中，於該貼合步驟中，如上所述，對切割膠帶上之半導體晶圓，貼合用於燒結接合用材料之供給之燒結接合用片材。此種構成適於一次地高效率進行燒結接合用材料對半導體晶圓中單片化為半導體晶片之各部位之供給、即燒結接合用材料層對半導體晶圓中單片化為半導體晶片之各部位之轉印形成。
另外，本發明之第3態樣之半導體裝置製造方法之貼合步驟中，對不經由向晶片之單片化之半導體晶圓(即，不伴有晶片間空隙之半導體晶圓)，貼合燒結接合用片材。於此種貼合步驟中，用於燒結接合用材料之供給之燒結接合用片材於貼合於半導體晶圓之區域中可對於該晶圓整面地壓接。因此，本半導體裝置製造方法適於降低供給至該過程中獲得之複數個半導體晶片之燒結接合用材料之損耗。
如以上所述，本發明之第3態樣之本半導體裝置製造方法適於一面降低燒結接合用材料之損耗一面高效率地進行燒結接合用材料對各半導體晶片之供給。
於本發明之第1至第3態樣中，燒結接合步驟中形成之燒結層之厚度位於該燒結層之平均厚度之較佳為60～140%之範圍內，更佳為80～120%之範圍內，更佳為90～110%之範圍內。燒結層之厚度越均勻，越容易於燒結層中獲得較高之接合可靠性。又，燒結接合步驟中形成之燒結層之平均厚度較佳為5～200 μm，更佳為10～150 μm。此種構成於燒結層中緩和起因於熱應力之內部應力確保充分之熱衝擊可靠性，並且抑制與燒結接合相關之成本乃至半導體裝置之製造成本之方面較佳。
本發明之第1至第3態樣中使用之燒結接合用片材中之燒結性粒子較佳為包含選自由銀、銅、氧化銀、及氧化銅所組成之群之至少一種。此種構成於在被燒結接合之基板與半導體晶片之間形成牢固之燒結層之方面較佳。又，燒結接合用片材中之黏合劑成分較佳為熱分解性之高分子黏合劑。
圖1至圖4係表示本發明之一實施形態之半導體裝置製造方法。本實施形態之半導體裝置製造方法係用以製造具備半導體晶片之燒結接合部位之功率半導體裝置等半導體裝置之方法，且包含如下之分割步驟、貼合步驟、拾取步驟、暫時固定步驟、及燒結接合步驟。
於分割步驟中，如圖1(a)及圖1(b)所示，自處於保持於切割膠帶T1上之狀態之半導體晶圓W，藉由刀片切割而形成半導體晶圓分割體10。
切割膠帶T1例如具有基材與黏著劑層之積層結構，且於單面具有黏著劑層所成之黏著面T1a。半導體晶圓W具有建有半導體元件之側之元件形成面及與其相反之背面。於背面形成有作為外部電極之平面電極(省略圖示)。作為用以形成半導體晶圓W之晶圓本體之構成材料，例如，可列舉碳化矽(SiC)或氮化鎵(GaN)等功率半導體裝置用之半導體材料。半導體晶圓W之厚度例如為20～1000 μm。
於本步驟中，具體而言，首先，於半導體晶圓W之元件形成面(圖中下表面)側貼合切割膠帶T1之黏著面T1a。於切割膠帶T1之黏著面T1a之周緣部，貼附有環狀框R。環狀框R係於貼附於切割膠帶T1之狀態下，切割裝置(省略圖示)所具備之搬送臂等搬送機構於工件搬送時機械性抵接之構件。
於本步驟中，繼而，於在切割膠帶T1之黏著面T1a上保持有半導體晶圓W之狀態下，驅動切割裝置所具備之旋轉刀片(省略圖示)，實施對半導體晶圓W之切削加工。該切削加工係於朝向旋轉刀片及半導體晶圓W持續供給流水之過程中，沿著切斷預定線實施。於圖1(b)中，以粗線模式性表示藉由切割用之旋轉刀片而形成之切削槽G。切削槽G之切口深度亦可到達切割膠帶T1內。藉由經由此種分割步驟，而於切割膠帶T1上，進行半導體晶圓W向晶片之單片化，形成包含複數個半導體晶片11之半導體晶圓分割體10。如此形成之半導體晶圓分割體10之半導體晶片11間之距離例如為10～500 μm。
於本實施形態中，繼而，如圖1(c)所示，於半導體晶圓分割體10貼合燒結接合用片材20(貼合步驟)。燒結接合用片材20係至少包含含有導電性金屬之燒結性粒子與黏合劑成分之組合物之片材體，且自與切割膠帶T1相反之側對切割膠帶T1上之半導體晶圓分割體10或其背面貼合。作為用於貼合之按壓機構，例如可列舉壓接輥。貼合溫度例如處於自室溫至200℃為止之範圍，用於貼合之負載例如為0.01～10 MPa。於本步驟中，可對半導體晶圓分割體10中之半導體晶片11之各者，使來自燒結接合用片材20之燒結接合用材料壓接，一次進行燒結接合用材料層21之轉印。
燒結接合用片材20係用於將接合對象物間燒結接合者，且如上所述至少包含含有導電性金屬之燒結性粒子與黏合劑成分之組合物之片材體。
燒結接合用片材20中之燒結性粒子係含有導電性金屬元素能夠進行燒結之粒子。作為導電性金屬元素，例如，可列舉金、銀、銅、鈀、錫、及鎳。作為此種燒結性粒子之構成材料，例如，可列舉金、銀、銅、鈀、錫、鎳、及選自該等之群之兩種以上之金屬之合金。作為燒結性粒子之構成材料，亦可列舉氧化銀或氧化銅、氧化鈀、氧化錫等金屬氧化物。又，燒結性粒子亦可為具有核殼結構之粒子。例如，燒結性粒子亦可為具有以銅為主成分之核與以金或銀等為主成分且被覆核之殼之核殼結構之粒子。於本實施形態中，燒結性粒子較佳為包含選自由銀粒子、銅粒子、氧化銀粒子、及氧化銅粒子所組成之群之至少一種。根據形成之燒結層中實現較高之導電性及較高之導熱性之觀點，作為燒結性粒子較佳為銀粒子及銅粒子。另外，根據耐氧化性之觀點，銀粒子容易操作而較佳。例如，於半導體晶片對附有鍍銀之銅基板之燒結接合中，使用包含銅粒子之燒結材作為燒結性粒子之情形時，必須於氮氣氛圍下等惰性環境下進行燒結製程，但於使用銀粒子形成燒結性粒子之燒結材之情形時，即便於空氣氛圍下亦能夠適當地執行燒結製程。
所用之燒結性粒子之平均粒徑根據對於燒結性粒子實現較低之燒結溫度等確保良好之燒結性之觀點，較佳為2000 nm以下，更佳為800 nm以下，更佳為500 nm以下。根據對於燒結接合用片材20或用以形成該燒結接合用片材20之組合物中之燒結性粒子實現良好之分散性之觀點，燒結性粒子之平均粒徑較佳為1 nm以上，更佳為10 nm以上，更佳為50 nm以上，更佳為100 nm以上。燒結性粒子之平均粒徑能夠藉由使用掃描式電子顯微鏡(SEM)進行之觀察而計測。
燒結接合用片材20中之燒結性粒子之含有比率根據實現可靠性較高之燒結接合之觀點，較佳為60～99質量%，更佳為65～98質量%，更佳為70～97質量%，更佳為70～95質量%。
燒結接合用片材20中之黏合劑成分係於本實施形態中至少包含熱分解性高分子黏合劑與低沸點黏合劑，亦可更包含塑化劑等其他成分。熱分解性高分子黏合劑係於燒結接合用之高溫加熱過程可熱分解之黏合劑成分，且於該加熱過程前有助於燒結接合用片材20之片材形狀之保持之要素。於本實施形態中，根據保證片材形狀保持功能之觀點，熱分解性高分子黏合劑係於常溫(23℃)下為固形之材料。作為此種熱分解性高分子黏合劑，例如，可列舉聚碳酸酯樹脂及丙烯酸樹脂。
至於作為熱分解性高分子黏合劑之聚碳酸酯樹脂，例如，可列舉於主鏈之碳酸酯基(-O-CO-O-)間不包含苯環等芳香族化合物而包含脂肪族鏈之脂肪族聚碳酸酯、及於主鏈之碳酸酯基(-O-CO-O-)間包含芳香族化合物之芳香族聚碳酸酯。作為脂肪族聚碳酸酯，例如，可列舉聚碳酸乙烯酯及聚碳酸丙烯酯。作為芳香族聚碳酸酯，可列舉於主鏈包含雙酚A結構之聚碳酸酯。
至於作為熱分解性高分子黏合劑之丙烯酸樹脂，例如，可列舉具有碳數4～18之直鏈狀或支鏈狀之烷基之丙烯酸酯及/或甲基丙烯酸酯之聚合物。以下，以「(甲基)丙烯酸」表示「丙烯酸」及/或「甲基丙烯酸」，以「(甲基)丙烯酸酯」表示「丙烯酸酯」及/或「甲基丙烯酸酯」。至於用以形成作為熱分解性高分子黏合劑之丙烯酸樹脂之(甲基)丙烯酸酯之烷基，例如，可列舉甲基、乙基、丙基、異丙基、正丁基、第三丁基、異丁基、戊基、異戊基、己基、庚基、環己基、2-乙基己基、辛基、異辛基、壬基、異壬基、癸基、異癸基、十一烷基、月桂基、十三烷基、十四烷基、硬脂基、及十八烷基。
作為熱分解性高分子黏合劑之丙烯酸樹脂亦可為包含來自上述(甲基)丙烯酸酯以外之其他單體之單體單元之聚合物。作為此種其他單體，例如，可列舉含有羧基之單體、酸酐單體、含有羥基之單體、含有磺酸基之單體、及含有磷酸基之單體。具體而言，作為含有羧基之單體，例如，可列舉丙烯酸酸、甲基丙烯酸酸、羧基乙基丙烯酸酯、羧基戊基丙烯酸酯、伊康酸、馬來酸、富馬酸、及丁烯酸。作為酸酐單體，例如，可列舉馬來酸酐或伊康酸酐。作為含有羥基之單體，例如，可列舉(甲基)丙烯酸2-羥基乙酯、(甲基)丙烯酸2-羥基丙酯、(甲基)丙烯酸4-羥基丁酯、(甲基)丙烯酸6-羥基己酯、(甲基)丙烯酸8-羥基辛酯、(甲基)丙烯酸10-羥基癸酯、(甲基)丙烯酸12-羥基月桂酯、及(甲基)丙烯酸4-(羥甲基)環己基甲酯。作為含有磺酸基之單體，例如，可列舉苯乙烯磺酸、烯丙基磺酸、2-(甲基)丙烯酸醯胺-2-甲基丙磺酸、(甲基)丙烯酸醯胺丙磺酸、磺丙基(甲基)丙烯酸酯、及(甲基)丙烯醯氧基萘磺酸。作為含有磷酸基之單體，例如可列舉2-羥基乙基丙烯醯基磷酸酯。
熱分解性高分子黏合劑之重量平均分子量較佳為10000以上。熱分解性高分子黏合劑之重量平均分子量設為藉由凝膠滲透層析法(GPC)測定且藉由聚苯乙烯換算算出之值。
燒結接合用片材20中之熱分解性高分子黏合劑之含有比率根據適當地發揮上述片材形狀保持功能之觀點，較佳為0.5～10質量%，更佳為0.8～8質量%，更佳為1～6質量%。
燒結接合用片材20中之低沸點黏合劑設為使用動態黏彈性測定裝置(商品名「HAAKE MARS III」，Thermo Fisher Scientfic公司製造)測定之表示23℃時之黏度為1×105 Pa・s以下之液狀或半液狀者。於本黏度測定中，使用20 mm之平行板作為治具，將板間間隙設為100 μm，將旋轉剪斷時之剪斷速度設為1 s-1 。
作為上述低沸點黏合劑，例如，可列舉萜烯醇類、除了萜烯醇類以外之醇類、伸烷基二醇烷基醚類、及除了伸烷基二醇烷基醚類以外之醚類。作為萜烯醇類，例如，可列舉異基環己醇、香茅醇、香葉草醇、橙花醇、香芹醇、及α-松脂醇。作為除了萜烯醇類以外之醇類，例如，可列舉戊醇、己醇、庚醇、辛醇、1-癸醇、乙二醇、二乙二醇、丙二醇、丁二醇、及2,4-二乙基-1,5戊二醇。作為伸烷基二醇烷基醚類，例如，可列舉乙二醇丁醚、二乙二醇甲醚、二乙二醇乙醚、二乙二醇丁醚、二乙二醇異丁醚、二乙二醇己醚、二乙二醇二甲醚、二乙二醇二乙醚、二乙二醇二丁醚、二乙二醇丁基甲醚、二乙二醇異丙基甲醚、三乙二醇甲醚、三乙二醇二甲醚、三乙二醇丁基甲醚、丙二醇丙基醚、二丙二醇甲醚、二丙二醇乙醚、二丙二醇丙基醚、二丙二醇丁醚、二丙二醇二甲醚、三丙二醇甲醚、及三丙二醇二甲醚。作為除了伸烷基二醇烷基醚類以外之醚類，例如，可列舉乙二醇乙醚乙酸酯、乙二醇丁醚乙酸酯、二乙二醇乙醚乙酸酯、二乙二醇丁醚乙酸酯、及二丙二醇甲醚乙酸酯。作為燒結接合用片材20中之成分，可使用一種低沸點黏合劑，亦可使用兩種以上之低沸點黏合劑。作為燒結接合用片材20中之低沸點黏合劑，根據常溫下之穩定性之觀點，較佳為萜烯醇類，更佳為異基環己醇。
燒結接合用片材20之23℃時之厚度較佳為5 μm以上，更佳為10 μm以上，且，較佳為300 μm以下，更佳為150 μm以下。又，燒結接合用片材20或形成其之燒結接合用組合物之70℃時之黏度例如為5×103 ～1×107 Pa・s，較佳為1×104 ～1×106 Pa・s。
燒結接合用片材20例如可藉由將上述各成分混合於溶劑中製備清漆，於作為基材之隔離件之上塗佈該清漆形成塗膜，使該塗膜乾燥而製作。作為清漆製備用之溶劑可使用有機溶劑或醇溶劑。

於本實施形態中，於貼合步驟之後，進行如圖1(d)所示之反轉步驟。於本步驟中，具體而言，進行具有黏著面T2a之晶圓加工用膠帶T2對於附有燒結接合用片材20之半導體晶圓分割體10亦即工件之貼合、與切割膠帶T1自該工件之剝離。加工用膠帶T2之黏著面T2a之黏著力與加工用膠帶T1之黏著面T1a之黏著力同等或為其以上。於本步驟中，例如，於附有燒結接合用片材20之半導體晶圓分割體10中之燒結接合用片材20之側，將晶圓加工用膠帶T2以其黏著面T2a側貼合之後，自該半導體晶圓分割體10剝離切割膠帶T1。
於本半導體裝置製造方法中，繼而，如圖2所示，將半導體晶片11與密接於其之燒結接合用材料層21一同地自晶圓加工用膠帶T2拾取，獲得附有燒結接合用材料層之半導體晶片11(拾取步驟)。於本步驟中，具體而言，對於拾取對象之附有燒結接合用材料層之半導體晶片11，於晶圓加工用膠帶T2之圖中下側使拾取機構之銷構件33上升隔著晶圓加工用膠帶T2頂起之後，藉由吸附吸具C而吸附保持該半導體晶片11。可利用此種吸附吸具C之吸附保持作用，進行附有燒結接合用材料層之半導體晶片11之拾取。於下述拾取步驟中亦情況相同。
繼而，如圖3(a)所示，將附有燒結接合用材料層之半導體晶片11介隔該燒結接合用材料層21，對支持基板S壓接進行暫時固定(暫時固定步驟)。具體而言，例如使用貼片機，將附有燒結接合用材料層之半導體晶片11介隔該燒結接合用材料層21，對支持基板S按壓進行暫時固定。作為支持基板S，例如，可列舉於表面伴有銅配線等配線之絕緣電路基板及引線框架。支持基板S中之晶片搭載部位可為銅配線或引線框架等之基體表面，亦可為形成於基體表面上之鍍膜之表面。作為該鍍膜，例如，可列舉鍍金膜、鍍銀膜、鍍鎳膜、鍍鈀膜、及鍍鉑膜。於本步驟中，暫時固定用之溫度條件例如處於自室溫至300℃為止之範圍，按壓之負載例如為0.01～50 MPa，接合時間例如為0.01～300秒鐘。
繼而，如圖3(b)所示，自介置於被暫時固定之半導體晶片11與基板S之間之燒結接合用材料層21，經由加熱過程形成燒結層22，將半導體晶片11對於支持基板S進行燒結接合(燒結接合步驟)。具體而言，藉由經由特定之高溫加熱過程，而於支持基板S與半導體晶片11之間，使燒結接合用材料層21中之低沸點黏合劑揮發，使熱分解性高分子黏合劑熱分解後汽化，繼而，使燒結性粒子之導電性金屬燒結。藉此，於支持基板S與各半導體晶片11之間形成燒結層22，將半導體晶片11對於支持基板S一面獲取與支持基板S側之電性連接一面進行接合。於本步驟中，燒結接合之溫度條件例如處於150～400℃之範圍，較佳為處於250～350℃之範圍。用於燒結接合之壓力例如為60 MPa以下，較佳為40 MPa以下。又，燒結接合之接合時間例如為0.3～300分鐘，較佳為0.5～240分鐘。例如，於該等條件之範圍內，適宜地設定用以實施燒結接合步驟之溫度分佈或壓力分佈。如以上之燒結接合步驟可使用能夠同時地進行加熱與加壓之裝置來進行。作為此種裝置，例如可列舉覆晶接合器及平行平板加壓機。又，根據與燒結接合相關之金屬之抗氧化之觀點，本步驟較佳為於氮氣氛圍下、減壓下、或還原氣體氛圍下進行。
燒結接合步驟中形成之燒結層22之厚度係於本實施形態中，處於燒結層22之平均厚度之較佳為60～140%之範圍內，更佳為80～120%之範圍內，更佳為90～110%之範圍內。燒結層22之厚度越均勻，則燒結層22中越容易獲得較高之接合可靠性。又，燒結層22之平均厚度較佳為5～200 μm，更佳為10～150 μm。此種構成於在燒結層22中緩和起因於熱應力之內部應力，確保充分之熱衝擊可靠性，並且抑制與燒結接合相關之成本甚至半導體裝置之製造成本之方面較佳。
於本半導體裝置製造方法中，繼而，如圖4(a)所示，將半導體晶片11之端子部(省略圖示)與支持基板S所具有之端子部(省略圖示)根據需要經由接合線W電性地連接(打線接合步驟)。半導體晶片11之端子部或支持基板S之端子部與接合線W之接線例如藉由伴有加熱之超聲波熔接而實現。作為接合線W，例如可使用金線、鋁線、或銅線。打線接合中之線加熱溫度例如為80～250℃，較佳為80～220℃。又，其加熱時間為數秒～數分鐘。
繼而，如圖4(b)所示，形成用以保護支持基板S上之半導體晶片11或接合線W之密封樹脂M(密封步驟)。於本步驟中，例如，藉由使用模具進行之轉注成形技術而形成密封樹脂M。作為密封樹脂M之構成材料，例如可使用環氧系樹脂。於本步驟中，用以形成密封樹脂M之加熱溫度例如為165～185℃，加熱時間例如為60秒～數分鐘。本密封步驟中密封樹脂M之硬化未充分進行之情形時，於本步驟之後進行用以使密封樹脂M完全硬化之後硬化步驟。
如以上所述，可製造具備半導體晶片之燒結接合部位之半導體裝置。
於本半導體裝置製造方法中，亦可代替參照圖1(d)所述之反轉步驟與參照圖2所述之拾取步驟，而進行如下之拾取步驟與其後之反轉步驟。
於參照圖1(c)所述之貼合步驟、即對切割膠帶T1上之半導體晶圓分割體10貼合燒結接合用片材20之步驟之後，如圖5(a)所示，將半導體晶片11與密接於其之燒結接合用材料層21一同地自切割膠帶T1拾取，獲得附有燒結接合用材料層之半導體晶片11(拾取步驟)。於該拾取步驟中，所使用之吸附吸具C藉由向附有燒結接合用材料層之半導體晶片11的燒結接合用材料層21側之吸附作用而保持該半導體晶片11。繼而，自已拾取附有燒結接合用材料層之半導體晶片11之吸附吸具C，如圖5(b)所示，向另一吸附吸具C'交接該半導體晶片11(反轉步驟)。吸附吸具C'係藉由向附有燒結接合用材料層之半導體晶片11的晶片側之吸附作用而保持該半導體晶片11。該附有燒結接合用材料層之半導體晶片11係用於如參照圖3(a)所述之暫時固定步驟。
於本半導體裝置製造方法中，於參照圖1(a)及圖1(b)所述之分割步驟與參照圖1(c)所述之貼合步驟之間，如圖6所示，亦可進行將保持半導體晶圓分割體10之切割膠帶T1暫時展延之步驟。
於本展延步驟中，使用展延裝置，首先，如圖6(a)所示，將於黏著面T1a伴有半導體晶圓分割體10與環狀框R之切割膠帶T1固定於展延裝置之保持器31。繼而，如圖6(b)所示，使展延裝置所具備之中空圓柱形狀之頂起構件32對於切割膠帶T1自其下側抵住上升，將貼合有半導體晶圓分割體10之切割膠帶T1以於包含半導體晶圓分割體10之徑向及圓周方向之二維方向上拉伸之方式拉伸。展延時之溫度條件例如為-20～70℃。其後，如圖6(c)所示，使頂起構件32下降，解除切割膠帶T1中之展延狀態。展延之後，亦可將切割膠帶T1中之較半導體晶圓分割體保持區域更靠外側之部分加熱使之收縮。該加熱之溫度例如為100～300℃。此種構成於展延後抑制半導體晶片11間之相隔距離變窄之方面較佳。
於本半導體裝置製造方法中，於參照圖1(c)所述之貼合步驟與參照圖1(d)所述之反轉步驟之間，亦可進行如圖7所示之展延步驟。又，於經由參照圖5上述之步驟之情形時，於參照圖1(c)所述之貼合步驟與參照圖5(a)所述之拾取步驟之間，亦可進行如圖7所示之展延步驟。
於本展延步驟中，使用展延裝置，首先，如圖7(a)所示，將於黏著面T1a伴有附有燒結接合用片材20之半導體晶圓分割體10與環狀框R之切割膠帶T1固定於展延裝置之保持器31。繼而，如圖7(b)所示，使展延裝置所具備之中空圓柱形狀之頂起構件32對於切割膠帶T1自其下側抵住上升，將貼合有半導體晶圓分割體10之切割膠帶T1以於包含半導體晶圓分割體10之徑向及圓周方向之二維方向上拉伸之方式展延。展延時之溫度條件例如為-20～70℃。此後，如圖7(c)所示，使頂起構件32下降，解除切割膠帶T1中之展延狀態。展延之後，亦可將切割膠帶T1中之較半導體晶圓分割體保持區域更靠外側之部分加熱使之收縮。該加熱之溫度例如為100～300℃。此種構成於展延後抑制半導體晶片11間之相隔距離變窄之方面較佳。可藉由經由如上之展延步驟而於拾取步驟前，於作為拾取對象之半導體晶片11之間確保充分之分離距離，因此，能夠適當地進行拾取步驟。
於本半導體裝置製造方法中，亦可代替參照圖1(a)及圖1(b)所述之分割步驟，而進行圖8所示之分割步驟。
於本分割步驟中，首先，如圖8(a)所示，經由對處於保持在切割膠帶T1上之狀態之半導體晶圓W之隱形切割，於半導體晶圓W內形成向複數個半導體晶片之斷裂用之脆弱化區域F。
於隱形切割中，將於半導體晶圓W之內部使聚光點聚集之雷射光例如自與切割膠帶T1相反之側，對半導體晶圓W沿著其分割預定線照射，從而因多光子吸收所致之剝蝕，於半導體晶圓W內形成脆弱化區域F。對於半導體晶圓中藉由雷射光照射而於分割預定線上形成脆弱化區域F之方法，例如於日本專利特開2002-192370號公報中有詳細敍述，本實施形態中之雷射光照射條件例如於以下之條件之範圍內適宜地調整。
＜雷射光照射條件＞
(A)雷射光
雷射光源 半導體雷射激發Nd：YAG(Yttrium Aluminum Garnet，釔鋁石榴石)雷射
波長 1064 nm
雷射光點剖面面積 3.14×10-8 cm2
振盪形態 Q切換脈衝
重複頻率 100 kHz以下
脈衝寬度 1 μs以下
輸出 1 mJ以下
雷射光品質 TEM00
偏光特性 直線偏光
(B)聚光用透鏡
倍率 100倍以下
NA 0.55
相對雷射光波長之透過率 100%以下
(C)被載置半導體基板之載置台之移動速度 280 mm/秒以下
於此種隱形切割之前或之後，半導體晶圓W亦可藉由對其背面側之研削加工而薄化。經由隱形切割之半導體晶圓W獲得可藉由保持其之切割膠帶T1之展延而沿著脆弱化區域F斷裂之狀態。
於本分割步驟中，繼而，如圖8(b)所示，將於黏著面T1a伴有經由隱形切割之半導體晶圓W與環狀框R之切割膠帶T1固定於展延裝置之保持器31。繼而，如圖8(c)及圖8(d)所示，藉由將保持經由隱形切割之半導體晶圓W之切割膠帶T1暫時展延而將半導體晶圓W斷裂。具體而言，首先，如圖8(c)所示，使展延裝置所具備之中空圓柱形狀之頂起構件32對於切割膠帶T1自其下側抵住上升，將貼合有半導體晶圓W之切割膠帶T1以於包含半導體晶圓W之徑向及圓周方向之二維方向拉伸之方式展延。展延時之溫度條件例如為-20～70℃。藉由此種展延，而於半導體晶圓W中之脆弱化區域F形成龜裂，產生向半導體晶片11之單片化。此後，如圖8(d)所示，使頂起構件32下降，解除切割膠帶T1中之展延狀態。展延之後，亦可將切割膠帶T1中之較半導體晶圓分割體保持區域更靠外側之部分加熱使之收縮。該加熱之溫度例如為100～300℃。此種構成於展延後抑制半導體晶片11間之相隔距離變窄之方面較佳。
藉由此種分割步驟，亦可於切割膠帶T1上形成半導體晶圓分割體10。如此形成之半導體晶圓分割體10之半導體晶片11間之距離例如為10～500 μm。所形成之半導體晶圓分割體10用於參照圖1(c)所述之貼合步驟。
於如以上之半導體裝置製造方法中，於參照圖1(c)所述之貼合步驟中，對切割膠帶T1上之半導體晶圓分割體10(包含已完成單片化之複數個半導體晶片11)，貼合用於供給燒結接合用材料之燒結接合用片材20。此種構成適於一次地高效率進行燒結接合用材料向複數個半導體晶片11之各者之供給、即燒結接合用材料層21向複數個半導體晶片11之各者之轉印形成。
另外，於本半導體裝置製造方法中，該分割步驟中形成於切割膠帶T1上之半導體晶圓分割體10(即，保持於切割膠帶T1之狀態下之經由向晶片之單片化之半導體晶圓W)之晶片間距離如上所述例如為10～500 μm。該晶片間距離例如取小於半導體晶片厚度之值而較短。於貼合步驟中，對此種半導體晶圓分割體10貼合燒結接合用片材20(燒結接合用片材20不對經由自半導體晶圓W之單片化之後排列於特定之加工用膠帶上之晶片間伴有相對較大之空隙之複數個半導體晶片進行貼合)。因此，本半導體裝置製造方法適於在燒結接合用材料向複數個半導體晶片11之各者之一次性供給時，降低燒結接合用材料之損耗。
如以上所述，本半導體裝置製造方法適於一面降低燒結接合用材料之損耗一面高效率地進行燒結接合用材料對各半導體晶片11之供給。
圖9及圖10係表示本發明之一實施形態之半導體裝置製造方法。本實施形態之半導體裝置製造方法係用以製造具備半導體晶片之燒結接合部位之功率半導體裝置等半導體裝置之方法，且包含如下之隱形切割步驟、貼合步驟、斷裂步驟、拾取步驟、暫時固定步驟、及燒結接合步驟。
於隱形切割步驟中，首先，如圖9(a)所示，經由對於處於保持於切割膠帶T1上之狀態之半導體晶圓W之隱形切割，於半導體晶圓W內形成向複數個半導體晶片之斷裂用之脆弱化區域F。於此種隱形切割之前或之後，半導體晶圓W亦可藉由對於其背面(於本實施形態中為圖中上表面)側之研削加工而薄化。經由隱形切割之半導體晶圓W獲得可藉由保持其之切割膠帶T1之展延而沿著脆弱化區域F斷裂之狀態。關於對半導體晶圓W之隱形切割之具體性態樣或條件，與參照圖8(a)所述者相同。
於本實施形態中，繼而，如圖9(b)所示，於半導體晶圓W貼合燒結接合用片材20(貼合步驟)。燒結接合用片材20係如上所述至少包含含有導電性金屬之燒結性粒子與黏合劑成分之組合物之片材體，且對於切割膠帶T1上之半導體晶圓W或其背面自與切割膠帶T1相反之側貼合。作為用於貼合之按壓機構，例如可列舉壓接輥。貼合溫度例如處於自室溫至200℃之範圍，用於貼合之負載例如為0.01～10 MPa。於本步驟中，可一次地高效率進行燒結接合用材料對半導體晶圓W中單片化為半導體晶片之各部位之供給、即燒結接合用材料層對半導體晶圓W中單片化為半導體晶片之各部位之轉印形成。
繼而，如圖10所示進行斷裂步驟。於本步驟中，使用展延裝置，首先，如圖10(a)所示，將於黏著面T1a伴有附有燒結接合用片材20之半導體晶圓W與環狀框R之切割膠帶T1固定於展延裝置之保持器31。繼而，如圖10(b)所示，使展延裝置所具備之中空圓柱形狀之頂起構件32對於切割膠帶T1自其下側抵住上升，將貼合有半導體晶圓W之切割膠帶T1以於包含半導體晶圓W之徑向及圓周方向之二維方向上拉伸之方式展延。展延時之溫度條件例如為-20～70℃。藉由此種展延，而於半導體晶圓W中之脆弱化區域F形成龜裂，產生向半導體晶片11之單片化。此後，如圖10(c)所示，使頂起構件32下降，解除切割膠帶T1中之展延狀態。如以上所述，於本斷裂步驟中，可藉由將保持半導體晶圓W之切割膠帶T1暫時展延，而將半導體晶圓W與其上之燒結接合用片材20一同地斷裂，形成包含來自燒結接合用片材20之燒結接合用材料層21所密接之複數個半導體晶片11之半導體晶圓分割體10。於上述展延之後，亦可將切割膠帶T1中之較半導體晶圓分割體保持區域更靠外側之部分加熱使之收縮。該加熱之溫度例如為100～300℃。此種構成於展延後抑制半導體晶片11間之相隔距離變窄之方面較佳。
於本實施形態中，於上述斷裂步驟之後，關於其他實施形態進行參照圖1(d)所述之反轉步驟、參照圖2所述之拾取步驟、參照圖3(a)所述之暫時固定步驟、參照圖3(b)所述之燒結接合步驟、參照圖4(a)所述之打線接合步驟、及參照圖4(b)所述之密封步驟。又，於本實施形態中，關於其他實施形態亦可代替參照圖1(d)所述之反轉步驟及參照圖2所述之拾取步驟，而進行參照圖5(a)所述之拾取步驟與參照圖5(b)所述之反轉步驟。
可以如上所述方式，製造具備半導體晶片之燒結接合部位之半導體裝置。
於本實施形態之半導體裝置製造方法中，於參照圖9(b)所述之貼合步驟中，對切割膠帶T1上之隱形切割後之半導體晶圓W，貼合用於供給燒結接合用材料之燒結接合用片材20。此種構成適於一次地高效率進行燒結接合用材料對半導體晶圓W中單片化為半導體晶片之各部位之供給、即燒結接合用材料層21對半導體晶圓W中單片化為半導體晶片之各部位之轉印形成。
另外，於本實施形態中之貼合步驟中，對不經由向晶片之單片化之半導體晶圓W(即，不伴有晶片間空隙之半導體晶圓W)，貼合燒結接合用片材20。於此種貼合步驟中，用於供給燒結接合用材料之燒結接合用片材20可於貼合於半導體晶圓W區域中對該晶圓整面地壓接。因此，本半導體裝置製造方法適於降低供給至該過程中所獲得之複數個半導體晶片11之燒結接合用材料之損耗。
如以上所述，本半導體裝置製造方法適於一面降低燒結接合用材料之損耗一面高效率地進行燒結接合用材料對各半導體晶片11之供給。
圖11係表示本發明之一實施形態之半導體裝置製造方法之一部分步驟。本實施形態之半導體裝置製造方法係用以製造具備半導體晶片之燒結接合部位之功率半導體裝置等半導體裝置之方法，且包含如下之貼合步驟、單片化步驟、拾取步驟、暫時固定步驟、及燒結接合步驟。
於貼合步驟中，如圖11(a)及圖11(b)所示，對保持於切割膠帶T1之黏著面T1a上之半導體晶圓W，貼合燒結接合用片材20。燒結接合用片材20係如上所述至少包含含有導電性金屬之燒結性粒子與黏合劑成分之組合物之片材體，且對於切割膠帶T1上之半導體晶圓W或其背面自與切割膠帶T1相反之側貼合。作為用於貼合之按壓機構，例如可列舉壓接輥。貼合溫度例如處於自室溫至200℃之範圍，用於貼合之負載例如為0.01～10 MPa。於本步驟中，可一次地高效率進行燒結接合用材料對半導體晶圓W中單片化為半導體晶片之各部位之供給、即燒結接合用材料層對半導體晶圓W中單片化為半導體晶片之各部位之轉印形成。又，於本步驟之前，半導體晶圓W亦可藉由對其背面(於本實施形態中為圖中上表面)側之研削加工而薄化。
繼而，如圖11(c)所示地進行單片化步驟。具體而言，於將伴有燒結接合用片材20之半導體晶圓W保持於切割膠帶T1之黏著面T1a上之狀態下，驅動切割裝置所具備之旋轉刀片(省略圖示)，實施對於半導體晶圓W及其上之燒結接合用片材20之切削加工。該切削加工係於朝向旋轉刀片及半導體晶圓W持續供給流水之過程中，沿著切斷預定線進行。於圖11(c)中，模式性地利用粗線表示藉由切割用之旋轉刀片而形成之切削槽G。切削槽G之切口深度亦可到達切割膠帶T1內。藉由經由此種單片化步驟，而於切割膠帶T1上形成包含來自燒結接合用片材20之燒結接合用材料層21所密接之複數個半導體晶片11之半導體晶圓分割體10。
於本實施形態中，於貼合步驟之後，進行如圖11(d)所示之反轉步驟。於本步驟中，具體而言，進行具有黏著面T2a之晶圓加工用膠帶T2對於附有燒結接合用片材20之半導體晶圓分割體10亦即工件之貼合與、及切割膠帶T1自該工件之剝離。加工用膠帶T2之黏著面T2a之黏著力係與加工用膠帶T1之黏著面T1a之黏著力同等或為其以上。於本步驟中，例如，將晶圓加工用膠帶T2以該黏著面T2a側貼合於附有燒結接合用片材20之半導體晶圓分割體10中之燒結接合用片材20之側之後，自該半導體晶圓分割體10剝離切割膠帶T1。
於本實施形態中，於上述單片化步驟之後，關於其他實施形態進行參照圖2所述之拾取步驟、參照圖3(a)所述之暫時固定步驟、參照圖3(b)所述之燒結接合步驟、參照圖4(a)所述之打線接合步驟、及參照圖4(b)所述之密封步驟。
於本實施形態中，亦可代替參照圖11(d)所述之反轉步驟與圖2所示之拾取步驟，而進行如下之拾取步驟與此後之反轉步驟。
首先，於參照圖11(c)所述之單片化步驟之後，如圖12(a)所示，將半導體晶片11與密接於其之燒結接合用材料層21一同地自切割膠帶T1拾取，獲得附有燒結接合用材料層之半導體晶片11(拾取步驟)。於該拾取步驟中，所使用之吸附吸具C係藉由向附有燒結接合用材料層之半導體晶片11的燒結接合用材料層21側之吸附作用而保持該半導體晶片11。繼而，自已拾取附有燒結接合用材料層之半導體晶片11之吸附吸具C，如圖12(b)所示，向另一吸附吸具C'交接該半導體晶片11(反轉步驟)。吸附吸具C'係藉由向附有燒結接合用材料層之半導體晶片11的晶片側之吸附作用而保持該半導體晶片11。該附有燒結接合用材料層之半導體晶片11用於如參照圖3(a)所述之暫時固定步驟。
於本實施形態中，亦可代替參照圖11(c)所述之刀片切割之單片化步驟，而進行經由隱形切割之如下之單片化步驟。
首先，如圖13(a)所示，經由對處於保持於切割膠帶T1上之狀態之半導體晶圓W之隱形切割，於半導體晶圓W內形成向複數個半導體晶片之斷裂用之脆弱化區域F。經由隱形切割之半導體晶圓W獲取可藉由保持其之切割膠帶T1之展延而沿著脆弱化區域F斷裂之狀態。關於對半導體晶圓W之隱形切割之具體性態樣或條件，與參照圖8(a)所述者相同。
繼而，如圖13(b)所示，將於黏著面T1a伴有附有燒結接合用片材20之半導體晶圓W與環狀框R之切割膠帶T1固定於展延裝置之保持器31。繼而，如圖13(c)所示，使展延裝置所具備之中空圓柱形狀之頂起構件32對切割膠帶T1自其下側抵住上升，將貼合有半導體晶圓W之切割膠帶T1以於包含半導體晶圓W之徑向及圓周方向之二維方向上拉伸之方式展延。展延時之溫度條件例如為-20～70℃。藉由此種展延，而於半導體晶圓W中之脆弱化區域F形成龜裂，產生向半導體晶片11之單片化。此後，如圖13(d)所示，使頂起構件32下降，解除切割膠帶T1中之展延狀態。如以上所述，於本單片化步驟中，可藉由將保持半導體晶圓W之切割膠帶T1暫時展延，而將半導體晶圓W與其上之燒結接合用片材20一同地斷裂，形成包含來自燒結接合用片材20之燒結接合用材料層21所密接之複數個半導體晶片11之半導體晶圓分割體10。於上述展延之後，亦可將切割膠帶T1中之較半導體晶圓分割體保持區域更靠外側之部分加熱而使之收縮。該加熱之溫度例如為100～300℃。此種構成於展延後抑制半導體晶片11間之相隔距離變窄之方面較佳。
如以上所述，可製造具備半導體晶片之燒結接合部位之半導體裝置。
於本實施形態之半導體裝置製造方法中，於參照圖11(b)所述之貼合步驟中，如上所述，對切割膠帶T1上之半導體晶圓W，貼合用於供給燒結接合用材料之燒結接合用片材20。此種構成適於一次地高效率進行燒結接合用材料對半導體晶圓W中單片化為半導體晶片11之各部位之供給、即燒結接合用材料層對半導體晶圓W中單片化為半導體晶片之各部位之轉印形成。
另外，於本半導體裝置製造方法之上述貼合步驟中，對不經由向晶片之單片化之半導體晶圓W(即，不伴有晶片間空隙之半導體晶圓W)，貼合燒結接合用片材20。於此種貼合步驟中，用於供給燒結接合用材料之燒結接合用片材20於貼合於半導體晶圓W之區域中可對該晶圓整面地壓接。因此，本半導體裝置製造方法適於降低供給至該過程中所獲得之複數個半導體晶片11之燒結接合用材料之損耗。
如以上所述，本半導體裝置製造方法適於一面降低燒結接合用材料之損耗一面高效率地進行燒結接合用材料對各半導體晶片11之供給。
10‧‧‧半導體晶圓分割體
11‧‧‧半導體晶片
20‧‧‧燒結接合用片材
21‧‧‧燒結接合用材料層
22‧‧‧燒結層
31‧‧‧保持器
32‧‧‧頂起構件
33‧‧‧銷構件
C‧‧‧吸附吸具
C'‧‧‧吸附吸具
F‧‧‧脆弱化區域
G‧‧‧切削槽
R‧‧‧環狀框
S‧‧‧支持基板(基板)
T1‧‧‧切割膠帶
T1a‧‧‧黏著面
T2‧‧‧晶圓加工用膠帶
T2a‧‧‧黏著面
W‧‧‧半導體晶圓
圖1(a)～(d)係表示本發明之一實施形態之半導體裝置製造方法中之一部分步驟。
圖2係表示繼圖1所示之步驟之後之步驟。
圖3(a)、(b)係表示繼圖2所示之步驟之後之步驟。
圖4(a)、(b)係表示繼圖3所示之步驟之後之步驟。
圖5(a)、(b)係表示本發明之一實施形態之半導體裝置製造方法中之一部分步驟。
圖6(a)～(c)係表示本發明之一實施形態之半導體裝置製造方法中之一部分步驟。
圖7(a)～(c)係表示本發明之一實施形態之半導體裝置製造方法中之一部分步驟。
圖8(a)～(d)係表示本發明之一實施形態之半導體裝置製造方法中之一部分步驟。
圖9(a)、(b)係表示本發明之一實施形態之半導體裝置製造方法中之一部分步驟。
圖10(a)～(c)係表示繼圖9所示之步驟之後之步驟。
圖11(a)～(d)係表示本發明之一實施形態之半導體裝置製造方法中之一部分步驟。
圖12(a)、(b)係表示本發明之一實施形態之半導體裝置製造方法中之一部分步驟。
圖13(a)～(d)係表示本發明之一實施形態之半導體裝置製造方法中之一部分步驟。

Claims (20)

  1. 一種半導體裝置製造方法，其包含如下步驟： 分割步驟，其係自處於保持於切割膠帶上之狀態之半導體晶圓形成包含複數個半導體晶片之半導體晶圓分割體； 貼合步驟，其係將包含含有導電性金屬之燒結性粒子及黏合劑成分之燒結接合用片材，對於上述切割膠帶上之上述半導體晶圓分割體自與上述切割膠帶相反之側貼合，進行來自上述燒結接合用片材之燒結接合用材料層對上述半導體晶片之各者之轉印； 拾取步驟，其係將上述半導體晶片與密接於其之燒結接合用材料層一同地拾取，獲得附有燒結接合用材料層之半導體晶片； 將附有上述燒結接合用材料層之半導體晶片介隔該燒結接合用材料層暫時固定於基板；及 自介置於被暫時固定之上述半導體晶片及上述基板之間之燒結接合用材料層，經由加熱過程形成燒結層，而將該半導體晶片接合於上述基板。
  2. 如請求項1之半導體裝置製造方法，其中於上述分割步驟中，藉由對上述半導體晶圓之刀片切割而形成上述半導體晶圓分割體。
  3. 如請求項1之半導體裝置製造方法，其中於上述分割步驟與上述貼合步驟之間，更包含將保持上述半導體晶圓分割體之上述切割膠帶暫時展延之步驟。
  4. 如請求項1之半導體裝置製造方法，其中於上述貼合步驟與上述拾取步驟之間，更包含將保持上述半導體晶圓分割體之上述切割膠帶暫時展延之展延步驟。
  5. 如請求項1之半導體裝置製造方法，其中於上述分割步驟中，於處於保持於切割膠帶上之狀態之上述半導體晶圓內形成向複數個半導體晶片之斷裂用之脆弱化區域之後，藉由保持該半導體晶圓之上述切割膠帶之展延而使該半導體晶圓斷裂，形成上述半導體晶圓分割體。
  6. 如請求項1之半導體裝置製造方法，其中於上述拾取步驟中，自上述切割膠帶拾取附有燒結接合用材料層之半導體晶片。
  7. 如請求項1之半導體裝置製造方法，其中於上述貼合步驟與上述拾取步驟之間，包含進行晶圓加工用膠帶對於上述附有燒結接合用片材之半導體晶圓分割體中之燒結接合用片材側之貼合、及上述切割膠帶自該半導體晶圓分割體之剝離之步驟， 於上述拾取步驟中，將附有燒結接合用材料層之半導體晶片自上述晶圓加工用膠帶拾取。
  8. 如請求項4之半導體裝置製造方法，其中於上述展延步驟與上述拾取步驟之間，包含進行晶圓加工用膠帶對包含來自上述燒結接合用片材之燒結接合用材料層所密接之複數個半導體晶片之上述半導體晶圓分割體中之燒結接合用材料層側之貼合、及上述切割膠帶自該半導體晶圓分割體之剝離之步驟， 於上述拾取步驟中，自上述晶圓加工用膠帶拾取附有燒結接合用材料層之半導體晶片。
  9. 一種半導體裝置製造方法，其包含如下步驟： 於處於保持於切割膠帶上之狀態之半導體晶圓內，形成向複數個半導體晶片之斷裂用之脆弱化區域； 將包含含有導電性金屬之燒結性粒子及黏合劑成分之燒結接合用片材，對上述切割膠帶上之上述半導體晶圓自與上述切割膠帶相反之側貼附； 斷裂步驟，其係藉由將保持上述半導體晶圓之上述切割膠帶展延，而將該半導體晶圓與上述燒結接合用片材一同地斷裂，形成包含來自該燒結接合用片材之燒結接合用材料層所密接之複數個半導體晶片之半導體晶圓分割體； 拾取步驟，其係將上述半導體晶片與密接於其之燒結接合用材料層一同地拾取，獲得附有燒結接合用材料層之半導體晶片； 將附有上述燒結接合用材料層之半導體晶片介隔該燒結接合用材料層暫時固定於基板；及 自介置於被暫時固定之上述半導體晶片及上述基板之間之燒結接合用材料層，經由加熱過程形成燒結層，而將該半導體晶片接合於上述基板。
  10. 一種半導體裝置製造方法，其包含如下步驟： 將包含含有導電性金屬之燒結性粒子及黏合劑成分之燒結接合用片材，對保持於切割膠帶上之半導體晶圓自與上述切割膠帶相反之側貼附； 單片化步驟，其係將上述切割膠帶上之上述半導體晶圓與上述燒結接合用片材一同地單片化，形成包含來自該燒結接合用片材之燒結接合用材料層所密接之複數個半導體晶片之半導體晶圓分割體； 拾取步驟，其係將上述半導體晶片與密接於其之燒結接合用材料層一同地拾取，獲得附有燒結接合用材料層之半導體晶片； 將附有上述燒結接合用材料層之半導體晶片介隔該燒結接合用材料層暫時固定於基板；及 自介置於被暫時固定之上述半導體晶片及上述基板之間之燒結接合用材料層，經由加熱過程形成燒結層，而將該半導體晶片接合於上述基板。
  11. 如請求項10之半導體裝置製造方法，其中於上述單片化步驟中，藉由對上述半導體晶圓及其上之上述燒結接合用片材之刀片切割而形成上述半導體晶圓分割體。
  12. 如請求項10之半導體裝置製造方法，其中於上述單片化步驟中，於處於保持於上述切割膠帶上之狀態之上述半導體晶圓內，形成向複數個半導體晶片之斷裂用之脆弱化區域之後，藉由保持該半導體晶圓之上述切割膠帶之展延而將該半導體晶圓及其上之上述燒結接合用片材斷裂，形成上述半導體晶圓分割體。
  13. 如請求項9之半導體裝置製造方法，其中於上述拾取步驟中，自上述切割膠帶拾取附有燒結接合用材料層之半導體晶片。
  14. 如請求項10之半導體裝置製造方法，其中於上述拾取步驟中，自上述切割膠帶拾取附有燒結接合用材料層之半導體晶片。
  15. 如請求項9之半導體裝置製造方法，其中於上述拾取步驟之前，包含進行晶圓加工用膠帶對包含來自上述燒結接合用片材之燒結接合用材料層所密接之複數個半導體晶片之上述半導體晶圓分割體中之燒結接合用材料層側之貼合、及上述切割膠帶自該半導體晶圓分割體之剝離之步驟， 於上述拾取步驟中，自上述晶圓加工用膠帶拾取附有燒結接合用材料層之半導體晶片。
  16. 如請求項10之半導體裝置製造方法，其中於上述拾取步驟之前，包含進行晶圓加工用膠帶對包含來自上述燒結接合用片材之燒結接合用材料層所密接之複數個半導體晶片之上述半導體晶圓分割體中之燒結接合用材料層側之貼合、及上述切割膠帶自該半導體晶圓分割體之剝離之步驟， 於上述拾取步驟中，自上述晶圓加工用膠帶拾取附有燒結接合用材料層之半導體晶片。
  17. 如請求項1至16中任一項之半導體裝置製造方法，其中上述燒結層之厚度處於該燒結層之平均厚度之60～140%之範圍內。
  18. 如請求項1至16中任一項之半導體裝置製造方法，其中上述燒結層之平均厚度為5～200 μm。
  19. 如請求項1至16中任一項之半導體裝置製造方法，其中上述燒結性粒子包含選自由銀、銅、氧化銀、及氧化銅所組成之群之至少一種。
  20. 如請求項1至16中任一項之半導體裝置製造方法，其中上述半導體裝置為功率半導體裝置。
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