TW202039120A - 附有基材之燒結接合用片材之捲繞體 - Google Patents
附有基材之燒結接合用片材之捲繞體 Download PDFInfo
- Publication number
- TW202039120A TW202039120A TW109108354A TW109108354A TW202039120A TW 202039120 A TW202039120 A TW 202039120A TW 109108354 A TW109108354 A TW 109108354A TW 109108354 A TW109108354 A TW 109108354A TW 202039120 A TW202039120 A TW 202039120A
- Authority
- TW
- Taiwan
- Prior art keywords
- bonding sheet
- sintered bonding
- sintered
- base material
- sheet
- Prior art date
Links
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L24/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
- H01L24/29—Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B65—CONVEYING; PACKING; STORING; HANDLING THIN OR FILAMENTARY MATERIAL
- B65H—HANDLING THIN OR FILAMENTARY MATERIAL, e.g. SHEETS, WEBS, CABLES
- B65H18/00—Winding webs
- B65H18/02—Supporting web roll
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
- C09J7/00—Adhesives in the form of films or foils
- C09J7/30—Adhesives in the form of films or foils characterised by the adhesive composition
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K35/00—Rods, electrodes, materials, or media, for use in soldering, welding, or cutting
- B23K35/02—Rods, electrodes, materials, or media, for use in soldering, welding, or cutting characterised by mechanical features, e.g. shape
- B23K35/0222—Rods, electrodes, materials, or media, for use in soldering, welding, or cutting characterised by mechanical features, e.g. shape for use in soldering, brazing
- B23K35/0233—Sheets, foils
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K35/00—Rods, electrodes, materials, or media, for use in soldering, welding, or cutting
- B23K35/02—Rods, electrodes, materials, or media, for use in soldering, welding, or cutting characterised by mechanical features, e.g. shape
- B23K35/0222—Rods, electrodes, materials, or media, for use in soldering, welding, or cutting characterised by mechanical features, e.g. shape for use in soldering, brazing
- B23K35/0244—Powders, particles or spheres; Preforms made therefrom
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
- C09J11/00—Features of adhesives not provided for in group C09J9/00, e.g. additives
- C09J11/02—Non-macromolecular additives
- C09J11/06—Non-macromolecular additives organic
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
- C09J169/00—Adhesives based on polycarbonates; Adhesives based on derivatives of polycarbonates
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
- C09J9/00—Adhesives characterised by their physical nature or the effects produced, e.g. glue sticks
- C09J9/02—Electrically-conducting adhesives
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
- H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L24/27—Manufacturing methods
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L24/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L24/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/93—Batch processes
- H01L24/95—Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B65—CONVEYING; PACKING; STORING; HANDLING THIN OR FILAMENTARY MATERIAL
- B65H—HANDLING THIN OR FILAMENTARY MATERIAL, e.g. SHEETS, WEBS, CABLES
- B65H2511/00—Dimensions; Position; Numbers; Identification; Occurrences
- B65H2511/10—Size; Dimensions
- B65H2511/13—Thickness
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B65—CONVEYING; PACKING; STORING; HANDLING THIN OR FILAMENTARY MATERIAL
- B65H—HANDLING THIN OR FILAMENTARY MATERIAL, e.g. SHEETS, WEBS, CABLES
- B65H2511/00—Dimensions; Position; Numbers; Identification; Occurrences
- B65H2511/10—Size; Dimensions
- B65H2511/14—Diameter, e.g. of roll or package
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B65—CONVEYING; PACKING; STORING; HANDLING THIN OR FILAMENTARY MATERIAL
- B65H—HANDLING THIN OR FILAMENTARY MATERIAL, e.g. SHEETS, WEBS, CABLES
- B65H2701/00—Handled material; Storage means
- B65H2701/30—Handled filamentary material
- B65H2701/36—Wires
- B65H2701/361—Semiconductor bonding wires
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08K—Use of inorganic or non-macromolecular organic substances as compounding ingredients
- C08K3/00—Use of inorganic substances as compounding ingredients
- C08K3/02—Elements
- C08K3/08—Metals
- C08K2003/0806—Silver
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
- C09J2469/00—Presence of polycarbonate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/02—Bonding areas; Manufacturing methods related thereto
- H01L2224/03—Manufacturing methods
- H01L2224/034—Manufacturing methods by blanket deposition of the material of the bonding area
- H01L2224/03444—Manufacturing methods by blanket deposition of the material of the bonding area in gaseous form
- H01L2224/0345—Physical vapour deposition [PVD], e.g. evaporation, or sputtering
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/02—Bonding areas; Manufacturing methods related thereto
- H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
- H01L2224/04026—Bonding areas specifically adapted for layer connectors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/02—Bonding areas; Manufacturing methods related thereto
- H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
- H01L2224/05—Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
- H01L2224/05001—Internal layers
- H01L2224/05073—Single internal layer
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/02—Bonding areas; Manufacturing methods related thereto
- H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
- H01L2224/05—Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
- H01L2224/05001—Internal layers
- H01L2224/05099—Material
- H01L2224/051—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
- H01L2224/05163—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of greater than 1550°C
- H01L2224/05166—Titanium [Ti] as principal constituent
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/02—Bonding areas; Manufacturing methods related thereto
- H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
- H01L2224/05—Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
- H01L2224/0554—External layer
- H01L2224/05599—Material
- H01L2224/056—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
- H01L2224/05638—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
- H01L2224/05639—Silver [Ag] as principal constituent
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L2224/27—Manufacturing methods
- H01L2224/27001—Involving a temporary auxiliary member not forming part of the manufacturing apparatus, e.g. removable or sacrificial coating, film or substrate
- H01L2224/27002—Involving a temporary auxiliary member not forming part of the manufacturing apparatus, e.g. removable or sacrificial coating, film or substrate for supporting the semiconductor or solid-state body
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L2224/27—Manufacturing methods
- H01L2224/27001—Involving a temporary auxiliary member not forming part of the manufacturing apparatus, e.g. removable or sacrificial coating, film or substrate
- H01L2224/27003—Involving a temporary auxiliary member not forming part of the manufacturing apparatus, e.g. removable or sacrificial coating, film or substrate for holding or transferring the layer preform
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L2224/27—Manufacturing methods
- H01L2224/271—Manufacture and pre-treatment of the layer connector preform
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L2224/27—Manufacturing methods
- H01L2224/274—Manufacturing methods by blanket deposition of the material of the layer connector
- H01L2224/2743—Manufacturing methods by blanket deposition of the material of the layer connector in solid form
- H01L2224/27436—Lamination of a preform, e.g. foil, sheet or layer
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L2224/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
- H01L2224/29—Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
- H01L2224/29001—Core members of the layer connector
- H01L2224/29099—Material
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L2224/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
- H01L2224/29—Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
- H01L2224/29001—Core members of the layer connector
- H01L2224/29099—Material
- H01L2224/29198—Material with a principal constituent of the material being a combination of two or more materials in the form of a matrix with a filler, i.e. being a hybrid material, e.g. segmented structures, foams
- H01L2224/29298—Fillers
- H01L2224/29299—Base material
- H01L2224/293—Base material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
- H01L2224/29301—Base material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of less than 400°C
- H01L2224/29311—Tin [Sn] as principal constituent
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L2224/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
- H01L2224/29—Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
- H01L2224/29001—Core members of the layer connector
- H01L2224/29099—Material
- H01L2224/29198—Material with a principal constituent of the material being a combination of two or more materials in the form of a matrix with a filler, i.e. being a hybrid material, e.g. segmented structures, foams
- H01L2224/29298—Fillers
- H01L2224/29299—Base material
- H01L2224/293—Base material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
- H01L2224/29338—Base material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
- H01L2224/29339—Silver [Ag] as principal constituent
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L2224/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
- H01L2224/29—Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
- H01L2224/29001—Core members of the layer connector
- H01L2224/29099—Material
- H01L2224/29198—Material with a principal constituent of the material being a combination of two or more materials in the form of a matrix with a filler, i.e. being a hybrid material, e.g. segmented structures, foams
- H01L2224/29298—Fillers
- H01L2224/29299—Base material
- H01L2224/293—Base material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
- H01L2224/29338—Base material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
- H01L2224/29344—Gold [Au] as principal constituent
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L2224/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
- H01L2224/29—Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
- H01L2224/29001—Core members of the layer connector
- H01L2224/29099—Material
- H01L2224/29198—Material with a principal constituent of the material being a combination of two or more materials in the form of a matrix with a filler, i.e. being a hybrid material, e.g. segmented structures, foams
- H01L2224/29298—Fillers
- H01L2224/29299—Base material
- H01L2224/293—Base material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
- H01L2224/29338—Base material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
- H01L2224/29347—Copper [Cu] as principal constituent
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L2224/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
- H01L2224/29—Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
- H01L2224/29001—Core members of the layer connector
- H01L2224/29099—Material
- H01L2224/29198—Material with a principal constituent of the material being a combination of two or more materials in the form of a matrix with a filler, i.e. being a hybrid material, e.g. segmented structures, foams
- H01L2224/29298—Fillers
- H01L2224/29299—Base material
- H01L2224/293—Base material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
- H01L2224/29338—Base material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
- H01L2224/29355—Nickel [Ni] as principal constituent
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L2224/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
- H01L2224/29—Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
- H01L2224/29001—Core members of the layer connector
- H01L2224/29099—Material
- H01L2224/29198—Material with a principal constituent of the material being a combination of two or more materials in the form of a matrix with a filler, i.e. being a hybrid material, e.g. segmented structures, foams
- H01L2224/29298—Fillers
- H01L2224/29299—Base material
- H01L2224/293—Base material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
- H01L2224/29363—Base material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of greater than 1550°C
- H01L2224/29364—Palladium [Pd] as principal constituent
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L2224/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
- H01L2224/29—Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
- H01L2224/29001—Core members of the layer connector
- H01L2224/29099—Material
- H01L2224/29198—Material with a principal constituent of the material being a combination of two or more materials in the form of a matrix with a filler, i.e. being a hybrid material, e.g. segmented structures, foams
- H01L2224/29298—Fillers
- H01L2224/29299—Base material
- H01L2224/29386—Base material with a principal constituent of the material being a non metallic, non metalloid inorganic material
- H01L2224/29387—Ceramics, e.g. crystalline carbides, nitrides or oxides
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L2224/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
- H01L2224/29—Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
- H01L2224/29001—Core members of the layer connector
- H01L2224/29099—Material
- H01L2224/29198—Material with a principal constituent of the material being a combination of two or more materials in the form of a matrix with a filler, i.e. being a hybrid material, e.g. segmented structures, foams
- H01L2224/29298—Fillers
- H01L2224/29299—Base material
- H01L2224/2939—Base material with a principal constituent of the material being a polymer, e.g. polyester, phenolic based polymer, epoxy
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L2224/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
- H01L2224/29—Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
- H01L2224/29001—Core members of the layer connector
- H01L2224/29099—Material
- H01L2224/29198—Material with a principal constituent of the material being a combination of two or more materials in the form of a matrix with a filler, i.e. being a hybrid material, e.g. segmented structures, foams
- H01L2224/29298—Fillers
- H01L2224/29399—Coating material
- H01L2224/294—Coating material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
- H01L2224/29438—Coating material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
- H01L2224/29439—Silver [Ag] as principal constituent
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L2224/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
- H01L2224/29—Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
- H01L2224/29001—Core members of the layer connector
- H01L2224/29099—Material
- H01L2224/29198—Material with a principal constituent of the material being a combination of two or more materials in the form of a matrix with a filler, i.e. being a hybrid material, e.g. segmented structures, foams
- H01L2224/29298—Fillers
- H01L2224/29399—Coating material
- H01L2224/294—Coating material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
- H01L2224/29438—Coating material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
- H01L2224/29444—Gold [Au] as principal constituent
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
- H01L2224/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
- H01L2224/321—Disposition
- H01L2224/32151—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/32221—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/32225—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
- H01L2224/32227—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation the layer connector connecting to a bond pad of the item
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
- H01L2224/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
- H01L2224/321—Disposition
- H01L2224/32151—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/32221—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/32245—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
- H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
- H01L2224/45001—Core members of the connector
- H01L2224/45099—Material
- H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
- H01L2224/45117—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 400°C and less than 950°C
- H01L2224/45124—Aluminium (Al) as principal constituent
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
- H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
- H01L2224/45001—Core members of the connector
- H01L2224/45099—Material
- H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
- H01L2224/45138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
- H01L2224/45144—Gold (Au) as principal constituent
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
- H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
- H01L2224/45001—Core members of the connector
- H01L2224/45099—Material
- H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
- H01L2224/45138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
- H01L2224/45147—Copper (Cu) as principal constituent
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
- H01L2224/732—Location after the connecting process
- H01L2224/73251—Location after the connecting process on different surfaces
- H01L2224/73265—Layer and wire connectors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
- H01L2224/83053—Bonding environment
- H01L2224/83054—Composition of the atmosphere
- H01L2224/83055—Composition of the atmosphere being oxidating
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
- H01L2224/83053—Bonding environment
- H01L2224/83054—Composition of the atmosphere
- H01L2224/83065—Composition of the atmosphere being reducing
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
- H01L2224/83053—Bonding environment
- H01L2224/83054—Composition of the atmosphere
- H01L2224/83075—Composition of the atmosphere being inert
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
- H01L2224/832—Applying energy for connecting
- H01L2224/83201—Compression bonding
- H01L2224/83203—Thermocompression bonding, e.g. diffusion bonding, pressure joining, thermocompression welding or solid-state welding
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
- H01L2224/8338—Bonding interfaces outside the semiconductor or solid-state body
- H01L2224/83399—Material
- H01L2224/834—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
- H01L2224/83438—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
- H01L2224/83439—Silver [Ag] as principal constituent
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
- H01L2224/8338—Bonding interfaces outside the semiconductor or solid-state body
- H01L2224/83399—Material
- H01L2224/834—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
- H01L2224/83438—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
- H01L2224/83444—Gold [Au] as principal constituent
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
- H01L2224/8338—Bonding interfaces outside the semiconductor or solid-state body
- H01L2224/83399—Material
- H01L2224/834—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
- H01L2224/83438—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
- H01L2224/83455—Nickel [Ni] as principal constituent
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
- H01L2224/8338—Bonding interfaces outside the semiconductor or solid-state body
- H01L2224/83399—Material
- H01L2224/834—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
- H01L2224/83463—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of greater than 1550°C
- H01L2224/83464—Palladium [Pd] as principal constituent
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
- H01L2224/8338—Bonding interfaces outside the semiconductor or solid-state body
- H01L2224/83399—Material
- H01L2224/834—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
- H01L2224/83463—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of greater than 1550°C
- H01L2224/83469—Platinum [Pt] as principal constituent
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
- H01L2224/838—Bonding techniques
- H01L2224/8384—Sintering
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
- H01L2224/83905—Combinations of bonding methods provided for in at least two different groups from H01L2224/838 - H01L2224/83904
- H01L2224/83907—Intermediate bonding, i.e. intermediate bonding step for temporarily bonding the semiconductor or solid-state body, followed by at least a further bonding step
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
- H01L2224/852—Applying energy for connecting
- H01L2224/85201—Compression bonding
- H01L2224/85205—Ultrasonic bonding
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
- H01L2224/852—Applying energy for connecting
- H01L2224/85201—Compression bonding
- H01L2224/85205—Ultrasonic bonding
- H01L2224/85207—Thermosonic bonding
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/91—Methods for connecting semiconductor or solid state bodies including different methods provided for in two or more of groups H01L2224/80 - H01L2224/90
- H01L2224/92—Specific sequence of method steps
- H01L2224/922—Connecting different surfaces of the semiconductor or solid-state body with connectors of different types
- H01L2224/9222—Sequential connecting processes
- H01L2224/92242—Sequential connecting processes the first connecting process involving a layer connector
- H01L2224/92247—Sequential connecting processes the first connecting process involving a layer connector the second connecting process involving a wire connector
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/93—Batch processes
- H01L2224/95—Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/93—Batch processes
- H01L2224/95—Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips
- H01L2224/97—Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips the devices being connected to a common substrate, e.g. interposer, said common substrate being separable into individual assemblies after connecting
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/02—Bonding areas ; Manufacturing methods related thereto
- H01L24/03—Manufacturing methods
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/02—Bonding areas ; Manufacturing methods related thereto
- H01L24/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
- H01L24/05—Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L24/31—Structure, shape, material or disposition of the layer connectors after the connecting process
- H01L24/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/73—Means for bonding being of different types provided for in two or more of groups H01L24/10, H01L24/18, H01L24/26, H01L24/34, H01L24/42, H01L24/50, H01L24/63, H01L24/71
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/91—Methods for connecting semiconductor or solid state bodies including different methods provided for in two or more of groups H01L24/80 - H01L24/90
- H01L24/92—Specific sequence of method steps
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/93—Batch processes
- H01L24/95—Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips
- H01L24/97—Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips the devices being connected to a common substrate, e.g. interposer, said common substrate being separable into individual assemblies after connecting
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/102—Material of the semiconductor or solid state bodies
- H01L2924/1025—Semiconducting materials
- H01L2924/1026—Compound semiconductors
- H01L2924/1027—IV
- H01L2924/10272—Silicon Carbide [SiC]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/102—Material of the semiconductor or solid state bodies
- H01L2924/1025—Semiconducting materials
- H01L2924/1026—Compound semiconductors
- H01L2924/1032—III-V
- H01L2924/1033—Gallium nitride [GaN]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/181—Encapsulation
Landscapes
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Chemical & Material Sciences (AREA)
- Organic Chemistry (AREA)
- Mechanical Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Die Bonding (AREA)
- Powder Metallurgy (AREA)
- Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
- Adhesive Tapes (AREA)
- Adhesives Or Adhesive Processes (AREA)
Abstract
本發明提供一種附有基材之燒結接合用片材之捲繞體,其於包含半導體晶片燒結接合部位之半導體裝置之製造過程中實現良好之作業效率,並且兼具良好之保存穩定性與較高之保存效率。
本發明之捲繞體1形成將附有基材之燒結接合用片材X於捲芯2上捲取成輥狀而成之形態,該附有基材之燒結接合用片材X具有積層結構,該積層結構包含:基材11、及包含含有導電性金屬之燒結性粒子與黏合劑成分之燒結接合用片材10。
Description
本發明係關於一種可用於半導體裝置之製造等之附有基材之燒結接合用片材之捲繞體。
於半導體裝置之製造中,作為用以一面將半導體晶片黏晶於引線框架或絕緣電路基板等支持基板一面取得與支持基板側之電性連接之方法,已知有於支持基板與晶片之間形成Au-Si共晶合金層而實現接合狀態之方法、或者利用焊料或含有導電性粒子之樹脂作為接合材之方法。
另一方面,近年來負責電力之供給控制之功率半導體裝置之普及顯著。功率半導體裝置大多情形下因動作時之通電量較大而導致發熱量較大。因此,於功率半導體裝置之製造中,關於一面將半導體晶片黏晶於支持基板一面取得與支持基板側之電性連接之方法,要求能夠實現高溫動作時可靠性亦較高之接合狀態。於採用SiC或GaN作為半導體材料來謀求高溫動作化之功率半導體裝置中,此種要求尤為強烈。並且,為了應對此種要求,提出有使用含有燒結性粒子與溶劑等之燒結接合用組合物之技術作為伴隨電性連接之黏晶方法。
於使用含有燒結性粒子之燒結接合用材料所進行之黏晶中,首先,經由燒結接合用材料於特定之溫度、荷重條件下將半導體晶片載置於支持基板之晶片接合預定部位。其後,於特定之溫度、加壓條件下進行加熱步驟以於支持基板與其上之半導體晶片之間產生燒結接合用材料中之溶劑揮發等且於燒結性粒子間使燒結進行。藉此,於支持基板與半導體晶片之間形成燒結層,使得半導體晶片電性連接並且機械性地接合於支持基板。此種技術例如記載於下述之專利文獻1、2中。
[先前技術文獻]
[專利文獻]
[專利文獻1]日本專利特開2013-039580號公報
[專利文獻2]日本專利特開2014-111800號公報
[發明所欲解決之問題]
於進行利用燒結接合之黏晶之半導體裝置製造過程中,先前有時逐個半導體晶片塗佈含有燒結性粒子之糊狀組合物。然而,此種方法並無效率。
另一方面,於利用燒結接合進行黏晶之半導體裝置製造過程中,為了一次性地對複數個半導體晶片供給燒結接合用材料,例如考慮經過如下製程。首先,於單面具有黏著面之加工用膠帶或其黏著面上排列複數個半導體晶片。繼而,對加工用膠帶上之半導體晶片陣列按壓作為製作成片材之形態之燒結接合用材料之附有基材之燒結接合用片材進行貼合。繼而,一面使燒結接合用片材中壓接於半導體晶片之部位殘留於該半導體晶片上,一面進行該片材體之剝離。藉由該片材體之貼合與其後之剝離進行燒結接合用材料自片材體向各半導體晶片之轉印(即,自基材剝離之燒結接合用片材小片移著於半導體晶片上),藉此獲得附有燒結接合用材料層之半導體晶片。根據此種方法,能夠一次性對複數個半導體晶片供給燒結接合用材料。
然而,上述之附有基材之燒結接合用片材具有單片狀之形態,故而向半導體晶片轉印時必須逐片準備,存在搬送性較差之問題。又,於對半導體晶片陣列之位置對準中,必須決定至少二個方向,就作業效率之觀點而言欠佳。進而,若採取單片狀之形態則暴露於大氣之面積變大,故而此種燒結接合用片材就保存穩定性之觀點而言亦欠佳。進而,具有單片狀之形態之燒結接合用片材成為保存時體積較大之原因,必需較廣之保管場所,故而就保存效率之觀點而言欠佳。
本發明係基於如上之情況而想出者,其目的在於提供一種附有基材之燒結接合用片材之捲繞體,其於包含半導體晶片燒結接合部位之半導體裝置之製造過程中實現良好之作業效率,並且兼具良好之保存穩定性與較高之保存效率。
[解決問題之技術手段]
根據本發明之第1態樣,提供一種捲繞體。該捲繞體形成將附有基材之燒結接合用片材於捲芯上捲取成輥狀而成之形態,該附有基材之燒結接合用片材具有積層結構,該積層結構包含:基材、及包含含有導電性金屬之燒結性粒子與黏合劑成分之燒結接合用片材。
附有基材之燒結接合用片材於包含半導體晶片之燒結接合部位之半導體裝置之製造過程中例如以如下方式使用。首先,對於排列於單面具有黏著面之加工用膠帶或其黏著面上之複數個半導體晶片按壓附有基材之燒結接合用片材並且進行貼合。繼而,一面使附有基材之燒結接合用片材中壓接於半導體晶片之部位殘留於該半導體晶片上,一面進行該片材體之剝離作業。藉由此種貼合作業與其後之剝離作業進行燒結接合用材料自燒結接合用片材向各半導體晶片之轉印,作為自基材剝離之燒結接合用片材小片之燒結接合用材料層產生於半導體晶片上(轉印步驟)。繼而,將附有燒結接合用材料層之半導體晶片經由其燒結接合用材料層壓接於基板而進行暫時固定。然後,經過加熱過程而由介存於經暫時固定之半導體晶片與基板之間之燒結接合用材料層形成燒結層,從而將該半導體晶片燒結接合於基板。例如能夠以如上方式使用附有基材之燒結接合用片材將半導體晶片燒結接合於基板。
如上所述,本捲繞體形成將附有基材之燒結接合用片材於捲芯上捲取成輥狀而成之形態。藉由使附有基材之燒結接合用片材形成捲繞體之形態,能夠於半導體裝置之製造中之轉印步驟時連續地進行燒結接合用材料自燒結接合用片材向各半導體晶片之轉印。具體而言,例如能夠實現以下之轉印步驟之連續化:以可覆蓋半導體晶片之方式自本捲繞體抽出一定長度之附有基材之燒結接合用片材,進行燒結接合用材料向半導體晶片之轉印,視需要將該片材剪裁,進而抽出一定長度之附有基材之燒結接合用片材並且準備新的半導體晶片來進行燒結接合用材料向半導體晶片之轉印。因此,相比形成單片狀形態之附有基材之燒結接合用片材於轉印步驟中必須逐片準備之情況,可謂搬送性良好。又,相比於對半導體晶片陣列之位置對準時必須規定至少兩個方向之情況,可謂作業效率良好。進而,由於本捲繞體形成輥狀形態,故與形成單片狀形態者相比,暴露於大氣之面積變小,就保存穩定性之觀點而言亦較佳,進而於保存時亦不會體積增大,就保存效率之觀點而言較佳。
於本捲繞體中,就抑制因成為於捲芯上捲取成輥狀而成之形態而導致附有基材之燒結接合用片材中之基材與燒結接合用片材產生剝離之觀點而言,較佳為捲芯之外徑與燒結接合用片材之厚度滿足下述式。又,就抑制燒結接合用片材之破裂之觀點而言較佳。
[捲芯之外徑(mm)]/[燒結接合用片材之厚度(mm)]2
≧3500
於本捲繞體中,捲芯之外徑為30~260 mm之情況亦與上述同樣,就抑制因成為於捲芯上捲取成輥狀而成之形態而導致附有基材之燒結接合用片材中之基材與燒結接合用片材產生剝離之觀點而言較佳。又,就抑制燒結接合用片材之破裂之觀點而言較佳。進而,藉由使捲芯之外徑為上述範圍,存在進一步抑制因捲芯之外徑較小所產生之剝離、破裂之傾向。又,相對於捲繞體之捲數而體積不會變得過大,就保管效率或傳輸效率之觀點而言較佳。
於本捲繞體中,燒結接合用片材之厚度為10~300 μm之情況亦與上述同樣,就抑制因成為於捲芯上捲取成輥狀而成之形態而導致附有基材之燒結接合用片材中之基材與燒結接合用片材產生剝離之觀點而言較佳。又,就抑制燒結接合用片材之破裂之觀點而言較佳。尤其是藉由使燒結接合用片材之厚度為10 μm以上,起因於燒結性粒子之形狀之對片材表面之影響(於片材表面產生凹凸等)變少,結果存在將半導體晶片燒結於基板時接合穩定之傾向。
[發明之效果]
如上所述,本捲繞體適於在包含半導體晶片燒結接合部位之半導體裝置之製造過程中實現良好之作業效率。又,本捲繞體兼具良好之保存穩定性與較高之保存效率。
圖1係本發明之一實施形態之附有基材之燒結接合用片材之捲繞體1之部分剖面模式圖。再者,為方便起見,將附有基材之燒結接合用片材X之一部分設為放大圖。附有基材之燒結接合用片材X具有包含基材11、及燒結接合用片材10之積層結構,且採取於該積層結構中基材11位於較燒結接合用片材10更外徑側之輥之形態。即,於本實施形態中,附有基材之燒結接合用片材X以於上述積層結構中基材11位於較燒結接合用片材10更外徑側之態樣或方向捲繞於捲芯2。
基材11係於附有基材之燒結接合用片材X中作為支持體發揮功能之要素,於積層結構中較之燒結接合用片材10可位於捲繞體之內徑側,亦可位於捲繞體之外徑側,就燒結接合用片材10之保護之觀點而言,較佳為位於捲繞體之外徑側。基材11例如為塑膠基材,作為該塑膠基材,可較佳地使用塑膠膜。作為塑膠基材之構成材料,例如可列舉:聚烯烴、聚酯、聚胺基甲酸酯、聚碳酸酯、聚醚醚酮、聚醯亞胺、聚醚醯亞胺、聚醯胺、全芳香族聚醯胺、聚氯乙烯、聚偏二氯乙烯、聚苯硫醚、聚芳醯胺、氟樹脂、纖維素系樹脂、及聚矽氧樹脂。作為聚烯烴,例如可列舉:低密度聚乙烯、直鏈狀低密度聚乙烯、中密度聚乙烯、高密度聚乙烯、超低密度聚乙烯、無規共聚聚丙烯、嵌段共聚聚丙烯、均聚丙烯、聚丁烯、聚甲基戊烯、乙烯-乙酸乙烯酯共聚物、離子聚合物樹脂、乙烯-(甲基)丙烯酸共聚物、乙烯-(甲基)丙烯酸酯共聚物、乙烯-丁烯共聚物、及乙烯-己烯共聚物。作為聚酯,例如可列舉:聚對苯二甲酸乙二酯、聚萘二甲酸乙二酯、及聚對苯二甲酸丁二酯。基材11可包含一種材料,亦可包含兩種以上之材料。基材11可具有單層結構,亦可具有多層結構。於基材11包含塑膠膜之情形時,該基材11亦可為於燒結接合用片材側具有形成黏著面之黏著劑層之切割膠帶等黏著帶或黏著片材。其黏著劑層亦可為藉由紫外線照射進行硬化而產生黏著力降低之紫外線硬化性黏著劑層。
基材11之厚度並無特別限定,例如較佳為10~200 μm,更佳為20~150 μm,更佳為30~100 μm。
燒結接合用片材10係用於將接合對象物間進行燒結接合者,且係至少包含含有導電性金屬之燒結性粒子與黏合劑成分之片狀燒結接合用組合物。燒結接合用片材10亦可於基材11上具有圓形或四邊形等特定之俯視形狀。又,亦可於單一之基材11上設置特定之俯視形狀之複數個燒結接合用片材10。又,燒結接合用片材10亦可具有於長條之基材11上沿著基材之延伸方向排列有複數個燒結接合用片材之態樣。
燒結接合用片材10中之燒結性粒子係含有導電性金屬元素並能夠進行燒結之粒子。作為導電性金屬元素,例如可列舉:金、銀、銅、鈀、錫、及鎳。作為此種燒結性粒子之構成材料,例如可列舉:金、銀、銅、鈀、錫、鎳、及選自該等之群中之兩種以上之金屬之合金。作為燒結性粒子之構成材料,亦可列舉:氧化銀、或氧化銅、氧化鈀、氧化錫等金屬氧化物。又,燒結性粒子亦可為具有核殼結構之粒子。例如燒結性粒子亦可為具有以銅作為主成分之核、及以金或銀等作為主成分且被覆核之殼的核殼結構粒子。於本實施形態中,燒結性粒子較佳為包含選自由銀粒子、銅粒子、氧化銀粒子、及氧化銅粒子所組成之群中之至少一種。此種構成就於使用燒結接合用片材10進行燒結接合之接合對象物間形成牢固燒結層之方面而言較佳。又,就於所形成之燒結層中實現較高之導電性及較高之導熱性之觀點而言,作為燒結性粒子,較佳為銀粒子及銅粒子。此外,就耐氧化性之觀點而言,銀粒子容易處理,故而較佳。例如,於在半導體晶片燒結接合於附有鍍銀之銅基板時使用包含銅粒子作為燒結性粒子之燒結材的情形時,必須於氮氣氛圍下等惰性環境下進行燒結製程,但於使用銀粒子形成燒結性粒子之燒結材之情形時,即便於空氣氛圍下亦能夠適當地實行燒結製程。
就確保燒結接合用片材10之表面之平坦性之觀點而言,所使用之燒結性粒子之平均粒徑較佳為10000 nm以下,更佳為3000 nm以下,更佳為1000 nm以下,更佳為500 nm以下。就使燒結接合用片材10或用以形成其之組合物中之燒結性粒子實現良好之分散性之觀點而言,燒結性粒子之平均粒徑較佳為1 nm以上,更佳為10 nm以上,更佳為50 nm以上。燒結性粒子之平均粒徑可藉由使用掃描式電子顯微鏡(SEM)所進行之觀察而計測。
燒結接合用片材10中之燒結性粒子之含有比率並無特別限定,例如為60~99質量%,較佳為65~98質量%,更佳為70~97質量%。藉由使燒結性粒子之含有比率處於上述範圍內,存在進一步抑制燒結接合用片材之破裂之傾向。又,存在將半導體晶片燒結於基板時接合更加穩定之傾向。尤其是若燒結性粒子之含有比率為60質量%以上,則燒結接合用片材中含有充分量之燒結性粒子,故而存在燒結時接合更加穩定之傾向。又,若燒結性粒子之含有比率為99質量%以下,則燒結接合用片材中可含充分量之黏合劑成分,故而存在進一步抑制燒結接合用片材之破裂之傾向。
燒結接合用片材10中之黏合劑成分可包含高分子黏合劑或低分子黏合劑,亦可進而包含塑化劑等其他成分。其中,就製成捲繞體時之燒結接合用片材之破裂之抑制、或基材與燒結接合用片材之剝離之抑制之觀點而言,燒結接合用片材10中之黏合劑成分較佳為包含高分子黏合劑,更佳為同時包含高分子黏合劑與低分子黏合劑。
燒結接合用片材中之高分子黏合劑較佳為熱分解性高分子黏合劑。熱分解性高分子黏合劑係可於燒結接合用之高溫加熱過程中進行熱分解之黏合劑成分,且係於該加熱過程前有助於燒結接合用片材10之片材形狀之保持之要素。於本實施形態中,就確保片材形狀保持功能之觀點而言,熱分解性高分子黏合劑係常溫(23℃)下為固體之材料。作為此種熱分解性高分子黏合劑,例如可列舉聚碳酸酯樹脂及丙烯酸系樹脂。燒結接合用片材10較佳為包含聚碳酸酯樹脂及/或丙烯酸系樹脂作為高分子黏合劑或熱分解性高分子黏合劑。
作為上述聚碳酸酯樹脂,例如可列舉於主鏈之碳酸酯基(-O-CO-O-)間不含苯環等芳香族化合物而包含脂肪族鏈之脂肪族聚碳酸酯、及於主鏈之碳酸酯基(-O-CO-O-)間包含芳香族化合物之芳香族聚碳酸酯。作為脂肪族聚碳酸酯,例如可列舉聚碳酸乙二酯及聚碳酸丙二酯。作為芳香族聚碳酸酯,可列舉於主鏈包含雙酚A結構之聚碳酸酯。
作為上述丙烯酸系樹脂,例如可列舉具有碳數4~18之直鏈狀或支鏈狀之烷基之丙烯酸酯及/或甲基丙烯酸酯之聚合物。以下,用「(甲基)丙烯酸」來表示「丙烯酸」及/或「甲基丙烯酸」,用「(甲基)丙烯酸酯」來表示「丙烯酸酯」及/或「甲基丙烯酸酯」。關於用以形成作為熱分解性高分子黏合劑之丙烯酸系樹脂之(甲基)丙烯酸酯之烷基,例如可列舉:甲基、乙基、丙基、異丙基、正丁基、第三丁基、異丁基、戊基、異戊基、己基、庚基、環己基、2-乙基己基、辛基、異辛基、壬基、異壬基、癸基、異癸基、十一烷基、月桂基、十三烷基、十四烷基、硬脂基、及十八烷基。
上述丙烯酸系樹脂亦可為包含來自上述(甲基)丙烯酸酯以外之其他單體之單體單元之聚合物。作為此種其他單體,例如可列舉:含羧基單體、酸酐單體、含羥基單體、含磺酸基單體、及含磷酸基單體。具體而言,作為含羧基單體,例如可列舉:丙烯酸、甲基丙烯酸、丙烯酸羧基乙酯、丙烯酸羧基戊酯、伊康酸、順丁烯二酸、反丁烯二酸、及丁烯酸。作為酸酐單體,例如可列舉順丁烯二酸酐或伊康酸酐。作為含羥基單體,例如可列舉:(甲基)丙烯酸2-羥基乙酯、(甲基)丙烯酸2-羥基丙酯、(甲基)丙烯酸4-羥基丁酯、(甲基)丙烯酸6-羥基己酯、(甲基)丙烯酸8-羥基辛酯、(甲基)丙烯酸10-羥基癸酯、(甲基)丙烯酸12-羥基月桂酯、及(甲基)丙烯酸4-(羥基甲基)環己基甲酯。作為含磺酸基單體,例如可列舉:苯乙烯磺酸、烯丙基磺酸、2-(甲基)丙烯醯胺-2-甲基丙磺酸、(甲基)丙烯醯胺丙磺酸、(甲基)丙烯酸磺丙酯、及(甲基)丙烯醯氧基萘磺酸。作為含磷酸基單體,例如可列舉2-羥基乙基丙烯醯基磷酸酯。
燒結接合用片材10中所含之高分子黏合劑或熱分解性高分子黏合劑之重量平均分子量較佳為10000以上。高分子黏合劑之重量平均分子量設為藉由凝膠滲透層析法(GPC)進行測定並藉由聚苯乙烯換算而算出之值。
燒結接合用片材10中所含之高分子黏合劑之含有比率並無特別限定,例如較佳為0~20質量%,更佳為0.1~20質量%,更佳為0.5~18質量%,更佳為1.0~15質量%。藉由使高分子黏合劑之含有比率處於上述範圍內,存在進一步抑制燒結接合用片材之破裂之傾向。尤其是若高分子黏合劑之含有比率為0.1質量%以上,則高分子黏合劑對燒結接合用片材之形狀保持之幫助變大,燒結性粒子彼此之黏結性提高,故而存在進一步抑制燒結接合用片材之破裂之傾向。又,若高分子黏合劑之含有比率為20質量%以下,則燒結接合用片材中可含充分量之低分子黏合劑或燒結性粒子,故而存在基材與燒結接合用片材之密接性提高,並且燒結時接合更加穩定之傾向。
燒結接合用片材10中之低分子黏合劑較佳為低沸點黏合劑。低沸點黏合劑係沸點低於熱分解性高分子黏合劑等高分子黏合劑之熱分解開始溫度之黏合劑成分。於本實施形態中,低沸點黏合劑設為使用動態黏彈性測定裝置(商品名「HAAKE MARS III」,Thermo Fisher Scientfic公司製造)所測定之23℃下之黏度顯示1×105
Pa・s以下的液狀或半液狀者。於本黏度測定中,使用20 mmϕ之平行板作為治具,將板間間隙設為100 μm,將旋轉剪切中之剪切速度設為1 s-1
。
作為上述低沸點黏合劑,例如可列舉:萜烯醇類、除萜烯醇類以外之醇類、伸烷基二醇烷基醚類、及除伸烷基二醇烷基醚類以外之醚類。作為萜烯醇類,例如可列舉:異𦯉基環己醇、香茅醇、香葉草醇、橙花醇、香芹醇、及α-萜品醇。作為除萜烯醇類以外之醇類,例如可列舉:戊醇、己醇、庚醇、辛醇、1-癸醇、乙二醇、二乙二醇、丙二醇、丁二醇、及2,4-二乙基-1,5-戊二醇。作為伸烷基二醇烷基醚類,例如可列舉:乙二醇丁醚、二乙二醇甲醚、二乙二醇乙醚、二乙二醇丁醚、二乙二醇異丁醚、二乙二醇己醚、二乙二醇二甲醚、二乙二醇二乙醚、二乙二醇二丁醚、二乙二醇丁基甲醚、二乙二醇異丙基甲醚、三乙二醇甲醚、三乙二醇二甲醚、三乙二醇丁基甲醚、丙二醇丙醚、二丙二醇甲醚、二丙二醇乙醚、二丙二醇丙醚、二丙二醇丁醚、二丙二醇二甲醚、三丙二醇甲醚、及三丙二醇二甲醚。作為除伸烷基二醇烷基醚類以外之醚類,例如可列舉:乙二醇乙醚乙酸酯、乙二醇丁醚乙酸酯、二乙二醇乙醚乙酸酯、二乙二醇丁醚乙酸酯、及二丙二醇甲醚乙酸酯。作為燒結接合用片材10中之成分,可使用一種低沸點黏合劑,亦可使用兩種以上之低沸點黏合劑。就常溫下之穩定性之觀點而言,燒結接合用片材10中之低沸點黏合劑較佳為萜烯醇類,更佳為異𦯉基環己醇。
低分子黏合劑之分子量並無特別限定,例如為500以下,較佳為450以下,更佳為400以下,進而較佳為350以下,尤佳為300以下。又,低分子黏合劑之分子量例如為50以上,較佳為100以上,更佳為150以上,進而較佳為200以上。
低沸點黏合劑之沸點只要低於熱分解性高分子黏合劑等高分子黏合劑之熱分解開始溫度,則並無特別限定,例如為500℃以下,較佳為450℃以下,更佳為400℃以下,進而較佳為350℃以下。又,低沸點黏合劑之沸點例如為50℃以上,較佳為100℃以上,更佳為150℃以上,進而較佳為200℃以上,尤佳為250℃以上。
燒結接合用片材10中之低分子黏合劑之含有比率並無特別限定,例如為0~50質量%,更佳為0.5~50質量%,更佳為1~30質量%,更佳為1.5~20質量%,更佳為2~15質量%。藉由使低分子黏合劑之含有比率處於上述範圍內,存在進一步抑制基材與燒結接合用片材之剝離之傾向。尤其是若低分子黏合劑之含有比率為0.5質量%以上,則燒結接合用片材中含有充分量之低分子黏合劑,故而存在基材與燒結接合用片材之接著力提高,進一步抑制基材與燒結接合用片材之剝離之傾向。又,若低分子黏合劑之含有比率為50質量%以下,則燒結接合用片材中可含充分量之高分子黏合劑或燒結性粒子,故而存在進一步抑制燒結接合用片材之破裂,並且燒結時接合更加穩定之傾向。
於燒結接合用片材10中包含高分子黏合劑與低分子黏合劑作為黏合劑成分之情形時,該等之含有比率(質量比,高分子黏合劑/低分子黏合劑)並無特別限定,例如較佳為1/20~10/1,更佳為1/10~3/1,更佳為1/8~1/1。藉由使上述比率成為1/20以上,黏合劑成分中之高分子黏合劑對燒結接合用片材之形狀保持之幫助變大,燒結性粒子彼此之黏結性提高,故而存在進一步抑制燒結接合用片材之破裂之傾向。又,藉由使上述比率成為10/1以下,黏合劑成分中之低分子黏合劑之比率變大,故而存在基材與燒結接合用片材之接著力提高,進一步抑制剝離之傾向。即,藉由使該比率處於上述範圍內,存在發揮以下兩者之優點之傾向:進一步抑制燒結接合用片材之破裂,且進一步抑制基材與燒結接合用片材之剝離。
燒結接合用片材10之厚度(23℃下之厚度)並無特別限定,例如較佳為10~300 μm,更佳為20~250 μm,更佳為30~200 μm。藉由使燒結接合用片材10之厚度處於上述範圍內,存在彎曲性變得良好,進一步抑制燒結接合用片材之破裂之傾向。又,存在將半導體晶片燒結於基板時接合更加穩定之傾向。尤其是藉由使燒結接合用片材之厚度成為10 μm以上,存在向半導體晶片轉印之燒結接合用材料之量變得充分,燒結時接合更加穩定之傾向。又,藉由使燒結接合用片材之厚度成為300 μm以下,存在燒結接合用片材之彎曲性變得良好,進一步抑制燒結接合用片材之破裂之傾向。
燒結接合用片材10或形成其之燒結接合用組合物之70℃下之黏度例如為5×103
~1×107
Pa・s,較佳為1×104
~1×106
Pa・s。
燒結接合用片材10例如可藉由如下方式製作:將上述之各成分於溶劑中進行混合而製備清漆,於基材11上塗佈該清漆而形成塗膜,使該塗膜乾燥。作為清漆製備用之溶劑,可使用有機溶劑或醇溶劑。
燒結接合用片材10之表面粗糙度並無特別限定,例如較佳為50 μm以下,更佳為30 μm以下,更佳為20 μm以下。藉由使表面粗糙度為上述範圍內,存在以較高之水準滿足燒結接合用片材表面之厚度方向之均一性,與成為被接著對象之基材(例如PET)之密接性提高之傾向。又,存在進一步抑制基材與燒結接合用片材之剝離及伴隨於剝離之破裂之傾向。再者,燒結接合用片材10之表面粗糙度例如可使用觸針式表面形狀測定器(「Dektak 8」,ULVAC股份有限公司製造)而計測。
燒結接合用片材之厚度與基材之厚度之比率(燒結接合用片材之厚度(μm)/基材之厚度(μm))並無特別限定,例如較佳為0.5~3.5,更佳為1.0~2.5,更佳為1.2~2.0。藉由使該比率成為上述範圍內,會使附有基材之燒結接合用片材具有適度之硬度(柔軟性),故而存在將燒結接合用片材轉印於半導體晶片時燒結接合用片材對半導體晶片之追隨性提高,並且附有基材之燒結接合用片材之搬送性變得良好之傾向。
於本實施形態中,附有基材之燒結接合用片材X捲繞於捲芯2時,捲芯2之外徑、即捲繞體1之最內徑R較佳為30~260 mm,更佳為50~210 mm,更佳為70~160 mm。藉由使捲芯2之外徑成為上述範圍內,存在更為抑制因成為於捲芯上捲取成輥狀而成之形態而導致附有基材之燒結接合用片材中之基材與燒結接合用片材產生剝離的傾向。又,存在更為抑制燒結接合用片材之破裂之傾向。尤其是存在如下傾向:捲芯2之外徑越接近該範圍之上限則曲率變得越低,因此更為抑制燒結接合用片材之破裂,越接近下限則相對於捲繞體之體積(捲芯與所捲取之片材之總體積)而捲數(片材之捲數)變大,保管效率或輸送效率越優異。
作為捲芯2之構成材料,例如可列舉:塑膠材料、紙材、金屬(例如鐵核、SUS核、鋁核等)。作為捲芯2用之塑膠材料,例如可列舉:丙烯腈-丁二烯-苯乙烯共聚物(ABS)、聚乙烯、聚丙烯、乙烯-丙烯共聚物、及乙烯-乙酸乙烯酯共聚物。
於本捲繞體中,捲芯之外徑與燒結接合用片材之厚度較佳為滿足下述式。
[捲芯之外徑(mm)]/[燒結接合用片材之厚度(mm)]2
≧3500
就抑制因成為於捲芯上捲取成輥狀而成之形態而導致附有基材之燒結接合用片材中之基材與燒結接合用片材產生剝離之觀點而言,較佳為根據上述式(左邊式)所得之值為3500以上。又,就抑制燒結接合用片材之破裂之觀點而言較佳。
本捲繞體可藉由將長條之附有基材之燒結接合用片材捲繞於捲芯而製作。捲繞可藉由基材位於較燒結接合用片材更內徑側之態樣或方向進行,亦可藉由基材位於較燒結接合用片材更外徑側之態樣或方向進行。
本捲繞體例如於半導體裝置之製造過程中以如下方式使用。首先,一面自捲繞體1以特定之速度捲出附有基材之燒結接合用片材X,一面於成為一定之長度(例如可將所準備之複數個半導體晶片全部覆蓋之長度)之時點視需要停止捲出,進行燒結接合用材料向半導體晶片之轉印,視需要進行剪裁,進而抽出一定之長度之附有基材之燒結接合用片材並且準備新的半導體晶片進行燒結接合用材料之轉印。如此,藉由使用本捲繞體,能夠實現轉印步驟之連續化。
圖2至圖6表示使用上述之附有基材之燒結接合用片材X所進行之半導體裝置製造方法之一部分之步驟。本方法係用以製造具備半導體晶片之燒結接合部位之功率半導體裝置等半導體裝置之方法。
於本方法中,首先,如圖2(a)所示,準備具有燒結接合用片材10之上述之附有基材之燒結接合用片材X及複數個晶片C。複數個晶片C各自為已經嵌入有特定半導體元件之半導體晶片。複數個晶片C於加工用膠帶T1之黏著面T1a上以鄰接晶片間留有空隙之方式排列。作為用以形成晶片C之晶片本體之構成材料,例如可列舉碳化矽(SiC)或氮化鎵(GaN)等功率半導體裝置用之半導體材料。晶片C之厚度例如為20~1000 μm。於各晶片C中,供貼附燒結接合用片材10之側之表面(圖2中為圖中上表面)已經形成有外部電極(圖示省略)。外部電極例如為銀平面電極,其厚度例如為10 nm~1000 nm。作為外部電極之銀平面電極亦可積層形成於半導體晶片表面上所形成之鈦薄膜上。該鈦薄膜之厚度例如為10 nm~1000 nm。該等銀平面電極及鈦薄膜例如可藉由蒸鍍法形成。又,於各晶片C之另一面(圖2中為圖中下表面)視需要形成有其他電極焊墊等(圖示省略)。
於本半導體裝置製造方法中,繼而進行轉印步驟。於轉印步驟中,首先,如圖2(b)所示,對加工用膠帶T1上之複數個晶片C壓接附有基材之燒結接合用片材X之燒結接合用片材10之側來進行貼合。作為用以貼合之按壓機構,例如可列舉壓接輥。貼合溫度例如處於室溫至200℃之範圍,較佳為50~100℃。用以貼合之荷重例如為0.01~10 MPa。貼合之後,如圖2(c)所示,一面使燒結接合用片材10之一部分殘留於晶片C側,一面進行基材11之剝離作業。藉由此種貼合作業與其後之剝離作業進行燒結接合用材料自燒結接合用片材10向各晶片C之轉印,而於晶片C上產生作為自周圍分離出之燒結接合用片材小片之燒結接合用材料層12。於本步驟中,可一次性地對各晶片C供給燒結接合用材料。
於本半導體裝置製造方法中,繼而,如圖3所示,將晶片C與燒結接合用片材10中密接於該晶片C之部分一起自加工用膠帶T1拾取,獲得帶有燒結接合用材料層12之晶片C(拾取步驟)。於本實施形態之拾取步驟中,具體而言,於加工用膠帶T1之圖中下側使拾取機構之頂銷構件21上升,介隔加工用膠帶T1將拾取對象之晶片C頂起。於此種頂起之後,藉由對燒結接合用材料層12側之吸附作用,而利用吸附筒夾22吸附保持該晶片C。如此可進行附有燒結接合用材料層12之晶片C之拾取。
於本實施形態中,繼而,如圖4所示,自拾取有附有燒結接合用材料層之晶片C之吸附筒夾22向另一吸附筒夾23交接該晶片C。吸附筒夾23藉由對附有燒結接合用材料層之晶片C之晶片側之吸附作用而保持該晶片C。
繼而,如圖5(a)所示,將附有燒結接合用材料層之晶片C經由其燒結接合用材料層12壓接於支持基板S來暫時固定(暫時固定步驟)。具體而言,例如使用晶片安裝機,將附有燒結接合用材料層之晶片C經由其燒結接合用材料層12按壓於支持基板S來暫時固定。作為支持基板S,例如可列舉表面帶有銅配線等配線之絕緣電路基板、及引線框架。支持基板S中之晶片搭載部位可為銅配線或引線框架等基體表面,亦可為形成於基體表面上之鍍覆膜之表面。作為該鍍覆膜,例如可列舉:鍍金膜、鍍銀膜、鍍鎳膜、鍍鈀膜、及鍍鉑膜。於本步驟中,暫時固定用之溫度條件例如處於室溫至300℃之範圍,施加於按壓之荷重例如為0.01~50 MPa,接合時間例如為0.01~300秒鐘。
繼而,如圖5(b)所示,經過加熱過程而由介存於暫時固定之晶片C與支持基板S之間之燒結接合用材料層12形成燒結層13,從而將晶片C燒結接合於支持基板S(燒結接合步驟)。具體而言,藉由經過特定之高溫加熱過程,於支持基板S與晶片C之間使燒結接合用材料層12中之低分子黏合劑揮發,視需要使高分子黏合劑之全部或一部分進行熱分解而揮散,而且使燒結性粒子之導電性金屬進行燒結。藉此,於支持基板S與晶片C之間形成燒結層13,一面將晶片C接合於支持基板S一面取得與支持基板S側之電性連接。於本步驟中,燒結接合之溫度條件例如處於150~400℃之範圍。用以燒結接合之壓力例如為60 MPa以下。又,燒結接合之接合時間例如為0.3~300分鐘。例如於該等條件之範圍內適當地設定用以實施燒結接合步驟之溫度分佈或壓力分佈。如上之燒結接合步驟可使用能夠同時進行加熱與加壓之裝置來進行。作為此種裝置,例如可列舉覆晶接合機及平行平板壓製機。又,就參與燒結接合之金屬之抗氧化之觀點而言,本步驟較佳為於氮氣氛圍下、減壓下、或還原氣體氛圍下進行。
於本半導體裝置製造方法中,繼而,如圖6(a)所示,將晶片C之電極部(圖示省略)與支持基板S所具有之端子部(圖示省略)視需要經由接合線W進行電性連接(打線接合步驟)。晶片C之電極部或支持基板S之端子部與接合線W之接線例如藉由帶有加熱之超音波熔接來實現。作為接合線W,例如可使用金線、鋁線、或銅線。打線接合中之線加熱溫度例如為80~250℃。又,其加熱時間例如為數秒~數分鐘。
繼而,如圖6(b)所示,形成用以保護支持基板S上之晶片C或接合線W之密封樹脂R(密封步驟)。於本步驟中,例如藉由使用模具所進行之轉注成形技術而形成密封樹脂R。作為密封樹脂R之構成材料,例如可使用環氧系樹脂。於本步驟中,用以形成密封樹脂R之加熱溫度例如為165~185℃,加熱時間例如為60秒~數分鐘。於在本密封步驟中密封樹脂R之硬化未充分進行之情形時,於本步驟之後進行用以使密封樹脂R完全硬化之後硬化步驟。
以如上方式可製造具備半導體晶片之燒結接合部位之半導體裝置。又,燒結接合用片材10適於作業效率較佳地製作,並且適於在包含半導體晶片燒結接合部位之半導體裝置之製造過程中之燒結製程中實現良好之作業效率。
如上所述,燒結接合用片材10之黏合劑成分較佳為包含熱分解性高分子黏合劑。根據此種構成,容易於上述之暫時固定之溫度、例如70℃及其附近之溫度範圍內,利用熱分解性高分子黏合劑之黏彈性確保燒結接合用片材10或來自其之燒結接合用材料層12之凝聚力,因此容易確保燒結接合用片材10或燒結接合用材料層12之接著力。因此,本構成就抑制以下情形之方面而言較佳:於接合對象物間介存來自燒結接合用片材10之燒結接合用材料層12之狀態下將接合對象物彼此壓接時或壓接後,於該等接合對象物產生位置偏離。
如上所述,燒結接合用片材10中之熱分解性高分子黏合劑等高分子黏合劑之重量平均分子量較佳為10000以上。此種構成就利用高分子黏合劑之黏彈性確保燒結接合用片材10或來自其之燒結接合用材料層12之凝聚力或接著力之方面而言較佳。
如上所述,燒結接合用片材10中之熱分解性高分子黏合劑等高分子黏合劑較佳為包含聚碳酸酯樹脂及/或丙烯酸系樹脂。如上所述,於使用燒結接合用片材10實現燒結接合之過程中,將接合對象物間以來自燒結接合用片材10之燒結接合用材料層12暫時固定後進行燒結接合用之高溫加熱。燒結接合用之高溫加熱例如於包含300℃及其附近之溫度範圍內進行,聚碳酸酯樹脂及丙烯酸系樹脂作為於300℃左右之溫度下會分解、揮散之高分子黏合劑而容易準備。因此,本構成就於使用燒結接合用片材10進行燒結接合之接合對象物間所形成之燒結層13中降低有機殘渣之方面而言較佳。存在燒結層13中之有機殘渣越少則該燒結層13越牢固之傾向,因此於該燒結層13中容易獲得較高之接合可靠性。
如上所述,燒結接合用片材10中之低分子黏合劑包含沸點低於高分子黏合劑之熱分解開始溫度之低沸點黏合劑。此種構成適於在燒結接合用片材10中確保良好之黏性,因此適於確保對晶片C或基材11等其他構件之良好之密接性。因此,本構成就抑制以下情形之方面而言較佳:於接合對象物間介存來自燒結接合用片材10之燒結接合用材料層12之狀態下將接合對象物彼此壓接時或壓接後,於該等接合對象物產生位置偏離。
[實施例]
[實施例1]
將混合攪拌機(hybrid mixer)(商品名「HM-500」,KEYENCE股份有限公司製造)以其攪拌模式來使用,將作為燒結性粒子P1
之銀粒子56.51質量份、作為高分子黏合劑(熱分解性高分子黏合劑)之聚碳酸酯樹脂(商品名「QPAC40」,重量平均分子量為150000,常溫下為固體,Empower Materials公司製造)0.82質量份、作為低分子黏合劑(低沸點黏合劑)之異𦯉基環己醇(商品名「Terusolve MTPH」,常溫下為液體,日本萜烯化學工業股份有限公司製造)3.29質量份、作為溶劑之甲基乙基酮39.38質量份加以混合而製備清漆。攪拌時間設為3分鐘。作為燒結性粒子P1
之上述銀粒子係以質量比9:1包含第1銀粒子(平均粒徑60 nm,DOWA Electronics股份有限公司製造)與第2銀粒子(平均粒徑1100 nm,三井金屬礦業股份有限公司製造)者。然後,將所得之清漆塗佈於作為基材之脫模處理膜(商品名「MRA38」,三菱化學股份有限公司製造,厚度38 μm)後使之乾燥,形成厚度200 μm之燒結接合用片材。乾燥溫度設為110℃,乾燥時間設為3分鐘。燒結接合用片材中之燒結性粒子含有比率為93.2質量%。如此製作包含燒結性粒子、高分子黏合劑及低分子黏合劑且積層於基材之燒結接合用片材(附有基材之燒結接合用片材)。將關於實施例1之附有基材之燒結接合用片材之組成揭示於表1(下述實施例及比較例亦同樣如此;又,於表1中,表示組成之各數值之單位為相對之「質量份」)。
[實施例2]
將燒結性粒子P1
之調配量設為55.78質量份、將聚碳酸酯樹脂(商品名「QPAC40」,Empower Materials公司製造)之調配量設為4.72質量份、不使用異𦯉基環己醇(商品名「Terusolve MTPH」,日本萜烯化學工業股份有限公司製造)、及將甲基乙基酮之使用量設為39.5質量份,除此以外,與實施例1同樣地製作附有基材之燒結接合用片材。關於本實施例之燒結接合用片材,燒結性粒子含有比率為92.2質量%,厚度為200 μm。
[實施例3]
將燒結性粒子P1
之調配量設為56.98質量份、將聚碳酸酯樹脂(商品名「QPAC40」,Empower Materials公司製造)之調配量設為0.75質量份、將異𦯉基環己醇(商品名「Terusolve MTPH」,日本萜烯化學工業股份有限公司製造)之調配量設為2.98質量份、及將甲基乙基酮之使用量設為39.29質量份,除此以外,與實施例1同樣地製作附有基材之燒結接合用片材。關於本實施例之燒結接合用片材,燒結性粒子含有比率為93.9質量%,厚度為200 μm。
[實施例4]
使用作為燒結性粒子P2
之銅粒子(平均粒徑200 nm,三井金屬礦業股份有限公司製造)63.36質量份以替代燒結性粒子P1
、將聚碳酸酯樹脂(商品名「QPAC40」,Empower Materials公司製造)之調配量設為5.43質量份、將異𦯉基環己醇(商品名「Terusolve MTPH」,日本萜烯化學工業股份有限公司製造)之調配量設為6.11質量份、及將甲基乙基酮之使用量設為25.1質量份,除此以外,與實施例1同樣地製作附有基材之燒結接合用片材。關於本實施例之燒結接合用片材,燒結性粒子含有比率為84.6質量%,厚度為200 μm。
[實施例5]
將燒結性粒子P1
之調配量設為56.69質量份、不使用聚碳酸酯樹脂(商品名「QPAC40」,Empower Materials公司製造)、將異𦯉基環己醇(商品名「Terusolve MTPH」,日本萜烯化學工業股份有限公司製造)之調配量設為3.98質量份、及將甲基乙基酮之使用量設為39.33質量份,除此以外,與實施例1同樣地製作附有基材之燒結接合用片材。關於本實施例之燒結接合用片材,燒結性粒子含有比率為93.4質量%,厚度為200 μm。
[比較例1]
將燒結性粒子P1
之調配量設為56.69質量份、不使用聚碳酸酯樹脂(商品名「QPAC40」,Empower Materials公司製造)與異𦯉基環己醇(商品名「Terusolve MTPH」,日本萜烯化學工業股份有限公司製造)、及將甲基乙基酮之使用量設為43.31質量份,除此以外,與實施例1同樣地製作附有基材之燒結接合用片材。關於比較例1之燒結接合用片材,燒結性粒子含有比率為100質量%,厚度為200 μm。
(可撓性評價)
使製成厚度238 μm(燒結接合用片材之厚度為200 μm)×寬度10 mm×長度100 mm之短條形之附有基材之燒結接合用片材於室溫(23℃)下以片材之寬度方向與捲芯平行的方式沿著圓筒形狀之捲芯(ABS樹脂製造,外徑6英吋),且以基材成為內徑側之方式捲繞3周而製作捲繞體。其後,自捲芯剝離附有基材之燒結接合用片材,並按照以下之基準評價可撓性。
○:燒結接合用片材未自基材剝離,亦未見燒結接合用片材之破裂
×:燒結接合用片材自基材剝離,或可見燒結接合用片材之破裂
(基材剝離性)
將製成厚度238 μm(燒結接合用片材之厚度為200 μm)×寬度10 mm×長度100 mm之短條形之附有基材之燒結接合用片材之基材進行固定,使用精密萬能試驗機(Autograph AGS-J,島津製作所公司(股)製造),對燒結接合用片材進行180°剝離試驗(拉伸速度:10 mm/sec、剝離溫度23℃),並按照以下之基準評價基材剝離性。
○:自基材無問題地剝離了燒結接合用片材
Δ:自基材剝離燒結接合用片材時稍感黏膩
×:燒結接合用片材自基材剝離,或可見燒結接合用片材之破裂
[表1]
實施例1 | 實施例2 | 實施例3 | 實施例4 | 實施例5 | 比較例1 | ||
燒結性粒子 | P1 (銀粒子) | 56.51 | 55.78 | 56.98 | - | 56.69 | 56.69 |
P2 (銅粒子) | - | - | - | 63.36 | - | - | |
高分子黏合劑 | 聚碳酸酯樹脂 | 0.82 | 4.72 | 0.75 | 5.43 | - | - |
低分子黏合劑 | 異𦯉基環己醇 | 3.29 | - | 2.98 | 6.11 | 3.98 | - |
使用溶劑 | 甲基乙基酮 | 39.38 | 39.5 | 39.29 | 25.1 | 39.33 | 43.31 |
燒結接合用片材之厚度(μm) | 200 | 200 | 200 | 200 | 200 | 200 | |
捲芯之外徑(mm) | 152.4 | 152.4 | 152.4 | 152.4 | 152.4 | 152.4 | |
[捲芯之外徑(mm)]/[燒結接合用片材之厚度(mm)]^2 | 3810 | 3810 | 3810 | 3810 | 3810 | 3810 | |
可撓性評價 | ○ | ○ | ○ | ○ | ○ | × | |
基材剝離性 | ○ | ○ | ○ | ○ | Δ | × |
作為以上之總結,以下列舉本發明之構成及其變化作為附記。
[附記1]
一種捲繞體,其形成將附有基材之燒結接合用片材於捲芯上捲取成輥狀而成之形態,該附有基材之燒結接合用片材具有積層結構,該積層結構包含:
基材、及
包含含有導電性金屬之燒結性粒子與黏合劑成分之燒結接合用片材。
[附記2]
如附記1中記載之捲繞體,其中捲芯之外徑與燒結接合用片材之厚度滿足下述式。
[捲芯之外徑(mm)]/[燒結接合用片材之厚度(mm)]2
≧3500或6000
[附記3]
如附記1或2中記載之捲繞體,其中捲芯之外徑為30~260 mm、50~210 mm、或70~160 mm。
[附記4]
如附記1至3中任一項記載之捲繞體,其中燒結接合用片材之厚度為10~300 μm、20~250 μm、或30~200 μm。
[附記5]
如附記1至4中任一項記載之捲繞體,其中燒結接合用片材之厚度與基材之厚度之比(燒結接合用片材之厚度(μm)/基材之厚度(μm))為0.5~3.5、1.0~2.5、或1.2~2.0。
[附記6]
如附記1至5中任一項記載之捲繞體,其中燒結接合用片材之表面粗糙度為50 μm以下、30 μm以下、或20 μm以下。
[附記7]
如附記1至6中任一項記載之捲繞體,其中上述黏合劑成分包含高分子黏合劑及/或低分子黏合劑。
[附記8]
如附記7中記載之捲繞體,其中上述高分子黏合劑之重量平均分子量為10000以上。
[附記9]
如附記7或8中記載之捲繞體,其中上述高分子黏合劑包含聚碳酸酯樹脂及/或丙烯酸系樹脂。
[附記10]
如附記7至9中任一項記載之捲繞體,其中上述低分子黏合劑之沸點低於上述高分子黏合劑之熱分解開始溫度。
[附記11]
如附記1至10中任一項記載之捲繞體,其中上述燒結性粒子包含選自由銀粒子、銅粒子、氧化銀粒子、及氧化銅粒子所組成之群中之至少一種。
[附記12]
如附記1至11中任一項記載之捲繞體,其中上述燒結性粒子之含有比率為60~99質量%、65~98質量%、或70~97質量%。
[附記13]
如附記1至12中任一項記載之捲繞體,其以基材位於較燒結接合用片材更內徑側或外徑側之方向將附有基材之燒結接合用片材捲繞於捲芯。
[附記14]
如附記1至13中任一項記載之捲繞體,其於基材上設置有特定(例如圓形或四角形)之俯視形狀之複數個燒結接合用片材。
[附記15]
如附記1至14中任一項記載之捲繞體,其於長條之基材上沿著基材之延伸方向排列有複數個燒結接合用片材。
1:捲繞體
2:捲芯
10:燒結接合用片材
11:基材
12:燒結接合用材料層
13:燒結層
21:頂銷構件
22:吸附筒夾
23:吸附筒夾
C:晶片(半導體晶片)
R:密封樹脂
S:支持基板(基板)
T1:加工用膠帶
T1a:黏著面
W:接合線
X:附有基材之燒結接合用片材
圖1係本發明之一實施形態之附有基材之燒結接合用片材之捲繞體之一部分放大剖面模式圖。
圖2(a)~(c)係表示使用圖1所示之附有基材之燒結接合用片材所進行之半導體裝置製造方法中之一部分之步驟。
圖3係表示繼圖2所示之步驟之後之步驟。
圖4係表示繼圖3所示之步驟之後之步驟。
圖5(a)、(b)係表示繼圖4所示之步驟之後之步驟。
圖6(a)、(b)係表示繼圖5所示之步驟之後之步驟。
1:捲繞體
2:捲芯
10:燒結接合用片材
11:基材
R:密封樹脂
X:附有基材之燒結接合用片材
Claims (5)
- 一種捲繞體,其形成將附有基材之燒結接合用片材於捲芯上捲取成輥狀而成之形態,該附有基材之燒結接合用片材具有積層結構,該積層結構包含:基材、及 包含含有導電性金屬之燒結性粒子與黏合劑成分之燒結接合用片材。
- 如請求項1之捲繞體,其中捲芯之外徑與燒結接合用片材之厚度滿足下述式, [捲芯之外徑(mm)]/[燒結接合用片材之厚度(mm)]2 ≧3500。
- 如請求項1或2之捲繞體,其中捲芯之外徑為30~260 mm。
- 如請求項1或2之捲繞體,其中燒結接合用片材之厚度為10~300 μm。
- 如請求項3之捲繞體,其中燒結接合用片材之厚度為10~300 μm。
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2019047965A JP2020147706A (ja) | 2019-03-15 | 2019-03-15 | 基材付き焼結接合用シートの巻回体 |
JP2019-047965 | 2019-03-15 |
Publications (1)
Publication Number | Publication Date |
---|---|
TW202039120A true TW202039120A (zh) | 2020-11-01 |
Family
ID=69804629
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
TW109108354A TW202039120A (zh) | 2019-03-15 | 2020-03-13 | 附有基材之燒結接合用片材之捲繞體 |
Country Status (5)
Country | Link |
---|---|
US (1) | US11697567B2 (zh) |
EP (1) | EP3709348A1 (zh) |
JP (2) | JP2020147706A (zh) |
CN (1) | CN111690340A (zh) |
TW (1) | TW202039120A (zh) |
Family Cites Families (12)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP5322609B2 (ja) | 2008-12-01 | 2013-10-23 | 日東電工株式会社 | 半導体装置製造用フィルムロール |
JP5830302B2 (ja) | 2011-08-11 | 2015-12-09 | 古河電気工業株式会社 | 加熱接合用材料、加熱接合用シート体、及び加熱接合用成形体 |
JP5558547B2 (ja) | 2012-12-05 | 2014-07-23 | ニホンハンダ株式会社 | ペースト状金属微粒子組成物、固形状金属または固形状金属合金の製造方法、金属製部材の接合方法、プリント配線板の製造方法および電気回路接続用バンプの製造方法 |
JP5714091B1 (ja) * | 2013-12-24 | 2015-05-07 | 日東電工株式会社 | 半導体装置用フィルムロール、半導体装置の製造方法、及び、半導体装置 |
JP2018524415A (ja) * | 2015-05-08 | 2018-08-30 | ヘンケル アイピー アンド ホールディング ゲゼルシャフト ミット ベシュレンクテル ハフツング | 焼結可能フィルムおよびペーストおよびその使用方法 |
JP6870943B2 (ja) * | 2015-09-30 | 2021-05-12 | 日東電工株式会社 | 加熱接合用シート、及び、ダイシングテープ付き加熱接合用シート |
JP6704322B2 (ja) * | 2015-09-30 | 2020-06-03 | 日東電工株式会社 | シートおよび複合シート |
JP6967839B2 (ja) * | 2016-03-23 | 2021-11-17 | 日東電工株式会社 | 加熱接合用シート、ダイシングテープ付き加熱接合用シート、及び、接合体の製造方法、パワー半導体装置 |
JP6815133B2 (ja) * | 2016-08-31 | 2021-01-20 | 日東電工株式会社 | 加熱接合用シート、及び、ダイシングテープ付き加熱接合用シート |
JP6815132B2 (ja) * | 2016-08-31 | 2021-01-20 | 日東電工株式会社 | 加熱接合用シート、及び、ダイシングテープ付き加熱接合用シート |
US10284792B2 (en) | 2017-02-03 | 2019-05-07 | Amazon Technologies, Inc. | Audio/video recording and communication devices with multiple cameras for superimposing image data |
EP3608947A4 (en) * | 2017-03-29 | 2020-12-16 | Nitto Denko Corporation | THERMAL BONDING SHEET AND DICE CUTTING STRIP ATTACHED TO A THERMAL BONDING SHEET |
-
2019
- 2019-03-15 JP JP2019047965A patent/JP2020147706A/ja active Pending
-
2020
- 2020-03-11 EP EP20162360.0A patent/EP3709348A1/en active Pending
- 2020-03-12 CN CN202010171624.5A patent/CN111690340A/zh active Pending
- 2020-03-13 US US16/818,398 patent/US11697567B2/en active Active
- 2020-03-13 TW TW109108354A patent/TW202039120A/zh unknown
-
2023
- 2023-04-10 JP JP2023063362A patent/JP2023103216A/ja active Pending
Also Published As
Publication number | Publication date |
---|---|
JP2023103216A (ja) | 2023-07-26 |
US20200290833A1 (en) | 2020-09-17 |
EP3709348A1 (en) | 2020-09-16 |
US11697567B2 (en) | 2023-07-11 |
JP2020147706A (ja) | 2020-09-17 |
CN111690340A (zh) | 2020-09-22 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
TWI762603B (zh) | 加熱接合用片材及附加熱接合用片材之切割帶 | |
TWI707485B (zh) | 半導體裝置之製造方法 | |
JP6815133B2 (ja) | 加熱接合用シート、及び、ダイシングテープ付き加熱接合用シート | |
TW201946130A (zh) | 半導體裝置製造方法 | |
TW202039139A (zh) | 燒結接合用片材、附有基材之燒結接合用片材、及附有燒結接合用材料層之半導體晶片 | |
JP2023041064A (ja) | 焼結接合用組成物、焼結接合用シート、および焼結接合用シート付きダイシングテープ | |
JP6815132B2 (ja) | 加熱接合用シート、及び、ダイシングテープ付き加熱接合用シート | |
JP7228577B2 (ja) | 半導体装置製造方法 | |
JP2023071703A (ja) | 焼結接合用シートおよび基材付き焼結接合用シート | |
JP7198693B2 (ja) | 焼結接合用シートおよび基材付き焼結接合用シート | |
JP7252798B2 (ja) | 焼結接合用シートおよび基材付き焼結接合用シート | |
EP3932658B1 (en) | Laminate | |
TW202039120A (zh) | 附有基材之燒結接合用片材之捲繞體 | |
TWI798420B (zh) | 半導體裝置製造方法 | |
JP2020122218A (ja) | 加熱接合用シート、ダイシングテープ付き加熱接合用シート、及び、接合体の製造方法、パワー半導体装置 | |
TWI837325B (zh) | 燒結接合用片材及附有基材之燒結接合用片材 |